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1. 发明授权

US5992004A Method for producing a thin film magnetic head 失效
标题翻译：薄膜磁头的制造方法
公开(公告)号：US5992004A
公开(公告)日：1999-11-30
申请号：US833405
申请日：1997-04-04
申请人： Kiyoshi Sato , Yoshihiko Kakihara , Masamichi Saito , Toshihiro Kuriyama , Toshinori Watanabe
发明人： Kiyoshi Sato , Yoshihiko Kakihara , Masamichi Saito , Toshihiro Kuriyama , Toshinori Watanabe
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , Y10T29/49044 , Y10T29/49046
摘要： A longitudinal bias layer and an electrode layer are formed on a non-magnetic material layer. The longitudinal bias layer and the electrode layer are partially removed by an etching technique so that a narrow gap defining the track width Tw is formed in the longitudinal bias layer and the electrode layer. Furthermore, a three-layer film consisting of, from bottom to top, a magnetoresistance effect layer, a non-magnetic layer, and a transverse bias layer, or otherwise a spin valve film consisting of a free magnetic layer, a non-magnetic layer, a fixed magnetic layer and a bias layer is formed on the above structure. The three-layer film or the spin valve film is then partially removed by an etching technique so that the three-layer film or the spin valve film remains only in the above-described narrow gap formed in the longitudinal bias layer and the electrode layer. The shape of the side walls of the three-layer film or the spin valve film is precisely determined by the side walls of the longitudinal bias layer and the electrode layer. The resultant three-layer film or the spin valve film exhibits excellent magnetic detection characteristics. Furthermore, the longitudinal bias layer has good magnetic coupling with the magnetoresistance effect layer.
摘要翻译：在非磁性材料层上形成纵向偏置层和电极层。通过蚀刻技术部分地去除纵向偏置层和电极层，使得在纵向偏置层和电极层中形成限定轨道宽度Tw的窄间隙。此外，由底部到顶部构成磁阻效应层，非磁性层和横向偏置层的三层膜，或者由自由磁性层，非磁性层在上述结构上形成固定磁性层和偏置层。然后通过蚀刻技术部分去除三层膜或自旋阀膜，使得三层膜或自旋阀膜仅保留在形成在纵向偏置层和电极层中的上述窄间隙中。三层膜或自旋阀膜的侧壁的形状由纵向偏置层和电极层的侧壁精确地确定。所得到的三层膜或自旋阀膜具有优异的磁检测特性。此外，纵向偏置层与磁阻效应层具有良好的磁耦合。

2. 发明授权

US5923503A Thin-film magnetic head and production method thereof 失效
标题翻译：薄膜磁头及其制造方法
公开(公告)号：US5923503A
公开(公告)日：1999-07-13
申请号：US616114
申请日：1996-03-14
申请人： Kiyoshi Sato , Yoshihiko Kakihara , Masamichi Saito , Toshihiro Kuriyama , Toshinori Watanabe
发明人： Kiyoshi Sato , Yoshihiko Kakihara , Masamichi Saito , Toshihiro Kuriyama , Toshinori Watanabe
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , Y10T29/49044 , Y10T29/49046
摘要： A longitudinal bias layer and an electrode layer are formed on a non-magnetic material layer. The longitudinal bias layer and the electrode layer are partially removed by an etching technique so that a narrow gap defining the track width Tw is formed in the longitudinal bias layer and the electrode layer. Furthermore, a three-layer film consisting of, from bottom to top, a magnetoresistance effect layer, a non-magnetic layer, and a transverse bias layer, or otherwise a spin valve film consisting of a free magnetic layer, a non-magnetic layer, a fixed magnetic layer and a bias layer is formed on the above structure. The three-layer film or the spin valve film is then partially removed by an etching technique so that the three-layer film or the spin valve film remains only in the above-described narrow gap formed in the longitudinal bias layer and the electrode layer. The shape of the side walls of the three-layer film or the spin valve film is precisely determined by the side walls of the longitudinal bias layer and the electrode layer. The resultant three-layer film or the spin valve film exhibits excellent magnetic detection characteristics. Furthermore, the longitudinal bias layer has good magnetic coupling with the magnetoresistance effect layer.
摘要翻译：在非磁性材料层上形成纵向偏置层和电极层。通过蚀刻技术部分地去除纵向偏置层和电极层，使得在纵向偏置层和电极层中形成限定轨道宽度Tw的窄间隙。此外，由底部到顶部构成磁阻效应层，非磁性层和横向偏置层的三层膜，或者由自由磁性层，非磁性层在上述结构上形成固定磁性层和偏置层。然后通过蚀刻技术部分去除三层膜或自旋阀膜，使得三层膜或自旋阀膜仅保留在形成在纵向偏置层和电极层中的上述窄间隙中。三层膜或自旋阀膜的侧壁的形状由纵向偏置层和电极层的侧壁精确地确定。所得到的三层膜或自旋阀膜具有优异的磁检测特性。此外，纵向偏置层与磁阻效应层具有良好的磁耦合。

3. 发明授权

US06847508B2 Spin valve thin film magnetic element and thin film magnetic head 有权
标题翻译：旋转阀薄膜磁性元件和薄膜磁头
公开(公告)号：US06847508B2
公开(公告)日：2005-01-25
申请号：US09727180
申请日：2000-11-30
申请人： Kenichi Tanaka , Masamichi Saito , Yosuke Ide , Naoya Hasegawa , Yoshihiko Kakihara , Kenji Honda
发明人： Kenichi Tanaka , Masamichi Saito , Yosuke Ide , Naoya Hasegawa , Yoshihiko Kakihara , Kenji Honda
IPC分类号： G01R33/09 , G11B5/39 , H01F10/32 , H01F41/32 , H01L43/08 , G11B5/127 , G11B5/339
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996 , H01F10/324 , H01F10/3268 , H01F10/3272 , H01F41/325
摘要： The present invention provides a spin valve thin film magnetic element including a laminate in which an antiferromagnetic layer, a pinned magnetic layer provided in contact with the antiferromagnetic layer so that the magnetization direction is pinned by an exchange coupling magnetic field with the antiferromagnetic layer, a nonmagnetic conductive layer provided in contact with the pinned magnetic layer, a second free magnetic layer provided in contact with the nonmagnetic conductive layer, a nonmagnetic intermediate layer provided in contact with the second free magnetic layer, a first free magnetic layer provided in contact with the nonmagnetic intermediate layer and antiferromagnetically coupled with the second free magnetic layer to form a ferrimagnetic state together with the second free magnetic layer, and a backed layer provided in contact with the first free magnetic layer and having higher conductivity than the first free magnetic layer are laminated. The present invention also provides a magnetic head using the spin valve thin film magnetic element.
摘要翻译：本发明提供了一种自旋阀薄膜磁性元件，其包括层叠体，其中反铁磁层，与反铁磁性层接触的被钉扎的磁性层，使得磁化方向被与反铁磁性层的交换耦合磁场固定，设置成与被钉扎的磁性层接触的非磁性导电层，与非磁性导电层接触设置的第二自由磁性层，与第二自由磁性层接触设置的非磁性中间层，与第二自由磁性层接触的第一自由磁性层非磁性中间层与第二自由磁性层反铁磁耦合以与第二自由磁性层一起形成亚铁磁状态，并且与第一自由磁性层接触并具有比第一自由磁性层更高的导电性的背衬层被层压。本发明还提供一种使用自旋阀薄膜磁性元件的磁头。

4. 发明授权

US06307722B1 Thin-film magnetic head and production method thereof 失效
标题翻译：薄膜磁头及其制造方法
公开(公告)号：US06307722B1
公开(公告)日：2001-10-23
申请号：US09237547
申请日：1999-01-26
申请人： Kiyoshi Sato , Yoshihiko Kakihara , Masamichi Saito , Toshihiro Kuriyama , Toshinori Watanabe
发明人： Kiyoshi Sato , Yoshihiko Kakihara , Masamichi Saito , Toshihiro Kuriyama , Toshinori Watanabe
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , Y10T29/49044 , Y10T29/49046
摘要： A longitudinal bias layer and an electrode layer are formed on a non-magnetic material layer. The longitudinal bias layer and the electrode layer are partially removed by an etching technique so that a narrow gap defining the track width Tw is formed in the longitudinal bias layer and the electrode layer. Furthermore, a three-layer film consisting of, from bottom to top, a magnetoresistance effect layer, a non-magnetic layer, and a transverse bias layer, or otherwise a spin valve film consisting of a free magnetic layer, a non-magnetic layer, a fixed magnetic layer and a bias layer is formed on the above structure. The three-layer film or the spin valve film is then partially removed by an etching technique so that the three-layer film or the spin valve film remains only in the above-described narrow gap formed in the longitudinal bias layer and the electrode layer. The shape of the side walls of the three-layer film or the spin valve film is precisely determined by the side walls of the longitudinal bias layer and the electrode layer. The resultant three-layer film or the spin valve film exhibits excellent magnetic detection characteristics. Furthermore, the longitudinal bias layer has good magnetic coupling with the magnetoresistance effect layer.
摘要翻译：在非磁性材料层上形成纵向偏置层和电极层。通过蚀刻技术部分地去除纵向偏置层和电极层，使得在纵向偏置层和电极层中形成限定轨道宽度Tw的窄间隙。此外，由底部到顶部构成磁阻效应层，非磁性层和横向偏置层的三层膜，或者由自由磁性层，非磁性层在上述结构上形成固定磁性层和偏置层。然后通过蚀刻技术部分去除三层膜或自旋阀膜，使得三层膜或自旋阀膜仅保留在形成在纵向偏置层和电极层中的上述窄间隙中。三层膜或自旋阀膜的侧壁的形状由纵向偏置层和电极层的侧壁精确地确定。所得到的三层膜或自旋阀膜具有优异的磁检测特性。此外，纵向偏置层与磁阻效应层具有良好的磁耦合。

5. 发明授权

US5959810A Spin-valve magnetoresistive element with biasing layer 失效
标题翻译：具有偏置层的旋转阀磁阻元件
公开(公告)号：US5959810A
公开(公告)日：1999-09-28
申请号：US975955
申请日：1997-11-21
申请人： Yoshihiko Kakihara , Masamichi Saito
发明人： Yoshihiko Kakihara , Masamichi Saito
IPC分类号： G11B5/33 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996
摘要： A spin-valve magnetoresistive element comprises an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic electrically conductive layer and a free magnetic layer formed in that order, and biasing layers formed on both sides of at least the free magnetic layer, the magnetization vector in the pinned magnetic layer being fixed by exchange anisotropic coupling with the antiferromagnetic layer, the biasing layers unifying the magnetization vector in the free magnetic layer in a direction perpendicular to the magnetization vector in the pinned magnetic layer, and a conductive path conducting a sensing current to the pinned magnetic layer, the nonmagnetic electrically conductive layer and the free magnetic layer. The antiferromagnetic layer extends to outer regions on both sides of the pinned magnetic layer, the nonmagnetic layer and the free magnetic layer. The biasing layers are formed on the antiferromagnetic layer. The top faces of the outer regions lie below the bottom face of the pinned magnetic layer, and the top faces of the biasing layers parallel to the deposited layers lie above the bottom face of the free magnetic layer in the sensing gap direction perpendicular to the deposited layers.
摘要翻译：自旋阀磁阻元件包括反铁磁层，钉扎磁性层，非磁性导电层和按顺序形成的自由磁性层，以及形成在至少自由磁性层两侧的偏置层，磁化矢量被钉扎的磁性层通过与反铁磁层的交换各向异性耦合来固定，偏置层在与固定磁性层中的磁化矢量垂直的方向上将自由磁性层中的磁化矢量统一起来，并将传感电流传导到固定磁性层，非磁性导电层和自由磁性层。反铁磁层延伸到钉扎磁性层，非磁性层和自由磁性层两侧的外部区域。偏置层形成在反铁磁性层上。外部区域的顶面位于被钉扎的磁性层的底面之下，并且平行于沉积层的偏置层的顶面位于垂直于沉积层的感测间隙方向上的自由磁性层的底面的上方层。

6. 发明授权

US08519704B2 Magnetic-balance-system current sensor 有权
标题翻译：磁平衡系统电流传感器
公开(公告)号：US08519704B2
公开(公告)日：2013-08-27
申请号：US13300076
申请日：2011-11-18
申请人： Yosuke Ide , Masamichi Saito , Akira Takahashi , Tsuyoshi Nojima , Shigenobu Miyajima , Naoki Sakatsume , Kenji Ichinohe , Yoshihiro Nishiyama , Tatsuya Kogure , Hidekazu Kobayashi , Masahiro Iizuka
发明人： Yosuke Ide , Masamichi Saito , Akira Takahashi , Tsuyoshi Nojima , Shigenobu Miyajima , Naoki Sakatsume , Kenji Ichinohe , Yoshihiro Nishiyama , Tatsuya Kogure , Hidekazu Kobayashi , Masahiro Iizuka
IPC分类号： G01R33/09
CPC分类号： G01R15/205 , B82Y25/00 , G01R33/093
摘要： A magnetic-balance-system current sensor includes: a magnetoresistive element, a resistance value of the magnetoresistive element being changed by applying an induction magnetic field generated by a measurement target current; magnetic cores disposed near the magnetoresistive element; a feedback coil disposed near the magnetoresistive element and configured to generate a cancelling magnetic field that cancels out the induction magnetic field; and a magnetic-field detecting bridge circuit having two outputs. The measurement target current is measured on the basis of a current flowing through the feedback coil when the induction magnetic field and the induction magnetic field and the cancelling magnetic field cancel each other out. The feedback coil, the magnetic cores, and the magnetic-field detecting bridge circuit are formed on a same substrate. The feedback coil is of a spiral type, and the magnetic cores are provided above and below the feedback coil.
摘要翻译：磁平衡系统电流传感器包括：磁阻元件，通过施加由测量目标电流产生的感应磁场来改变磁阻元件的电阻值; 设置在磁阻元件附近的磁芯; 设置在磁阻元件附近并被配置为产生抵消感应磁场的消除磁场的反馈线圈; 以及具有两个输出的磁场检测桥接电路。当感应磁场和感应磁场和消除磁场相互抵消时，基于流过反馈线圈的电流来测量测量目标电流。反馈线圈，磁芯和磁场检测桥式电路形成在同一基板上。反馈线圈是螺旋型的，并且磁芯设置在反馈线圈的上方和下方。

7. 发明授权

US08437107B2 Magnetic coupling type isolator 有权
标题翻译：磁耦合型隔离器
公开(公告)号：US08437107B2
公开(公告)日：2013-05-07
申请号：US12754509
申请日：2010-04-05
申请人： Yosuke Ide , Masamichi Saito , Akira Takahashi , Tsuyoshi Nojima , Yoshihiro Nishiyama , Hidekazu Kobayashi , Kenji Ichinohe , Naoki Sakatsume
发明人： Yosuke Ide , Masamichi Saito , Akira Takahashi , Tsuyoshi Nojima , Yoshihiro Nishiyama , Hidekazu Kobayashi , Kenji Ichinohe , Naoki Sakatsume
IPC分类号： G11B5/39
CPC分类号： G01R33/098
摘要： A magnetic coupling type isolator includes: a magnetic field generator for generating an external magnetic field by an input signal; a magnetoresistive element for detecting the external magnetic field and converting the detected magnetic field into an electric signal, the magnetoresistive element being electrically insulated from the magnetic field generator and positioned in a location capable of being magnetically coupled so as to be overlapped with the magnetic field generator as seen in a top plan view; and first and second shield films overlapped with the magnetic field generator and the magnetoresistive element as seen in a top plan view, wherein a distance between the magnetoresistive element and the second shield film is set to 8 to 100 μm.
摘要翻译：磁耦合型隔离器包括：用于通过输入信号产生外部磁场的磁场发生器; 磁阻元件，用于检测外部磁场并将检测到的磁场转换成电信号，磁阻元件与磁场发生器电绝缘并且位于能够被磁耦合的位置以与磁场重叠发电机，如俯视图; 以及第一和第二屏蔽膜，如俯视图所示，与磁场发生器和磁阻元件重叠，其中磁阻元件和第二屏蔽膜之间的距离设定为8至100μm。

8. 发明授权

US08410893B2 Magnetic detector and method for manufacturing the same 有权
标题翻译：磁性探测器及其制造方法
公开(公告)号：US08410893B2
公开(公告)日：2013-04-02
申请号：US13439782
申请日：2012-04-04
申请人： Hideaki Kawasaki , Masamichi Saito , Yoshihiro Nishiyama , Kenji Ichinohe , Yosuke Ide
发明人： Hideaki Kawasaki , Masamichi Saito , Yoshihiro Nishiyama , Kenji Ichinohe , Yosuke Ide
IPC分类号： H01L43/00
CPC分类号： H01L43/02 , H01F10/3236 , H01F10/3254 , H01F10/3272 , H01L43/08 , Y10T29/4902
摘要： A first short-circuit layer and a second short-circuit layer are electrically connected to and integrally stacked onto only a first magnetoresistance effect element layer and a first resistance element layer, respectively, so as to achieve short-circuiting, and thereby adjusting electrical resistances of the first magnetoresistance effect element layer and the first resistance element layer.
摘要翻译：第一短路层和第二短路层分别与第一磁阻效应元件层和第一电阻元件层电连接并整体堆叠，以实现短路，从而调整电阻的第一磁阻效应元件层和第一电阻元件层。

9. 发明授权

US08222769B2 Magnetic coupling type isolator 有权
标题翻译：磁耦合型隔离器
公开(公告)号：US08222769B2
公开(公告)日：2012-07-17
申请号：US12754529
申请日：2010-04-05
申请人： Yosuke Ide , Masamichi Saito , Akira Takahashi , Tsuyoshi Nojima , Yoshihiro Nishiyama , Hidekazu Kobayashi , Kenji Ichinohe , Naoki Sakatsume
发明人： Yosuke Ide , Masamichi Saito , Akira Takahashi , Tsuyoshi Nojima , Yoshihiro Nishiyama , Hidekazu Kobayashi , Kenji Ichinohe , Naoki Sakatsume
IPC分类号： H04B3/00 , H01F27/30 , H01L29/82
CPC分类号： G01R33/098
摘要： A magnetic coupling type isolator includes: a magnetic field generator for generating an external magnetic field by an input signal; a magnetoresistive element for detecting the external magnetic field and converting the detected magnetic field into an electric signal, the magnetoresistive element being electrically insulated from the magnetic field generator and positioned in a location capable of being magnetically coupled so as to be overlapped with the magnetic field generator as seen in a top plan view; first and second shield films overlapped with the magnetic field generator and the magnetoresistive element as seen in a top plan view; and a third shield film disposed to surround the magnetoresistive element.
摘要翻译：磁耦合型隔离器包括：用于通过输入信号产生外部磁场的磁场发生器; 磁阻元件，用于检测外部磁场并将检测到的磁场转换成电信号，磁阻元件与磁场发生器电绝缘并且位于能够被磁耦合的位置以与磁场重叠发电机，如俯视图; 第一和第二屏蔽膜与磁场发生器和磁阻元件重叠，如俯视图所示; 以及设置成围绕所述磁阻元件的第三屏蔽膜。

10. 发明授权

US07961442B2 Tunneling magnetic detecting element having insulation barrier layer and method for making the same 有权
标题翻译：具有绝缘阻挡层的隧道磁检测元件及其制造方法
公开(公告)号：US07961442B2
公开(公告)日：2011-06-14
申请号：US11947315
申请日：2007-11-29
申请人： Kazumasa Nishimura , Ryo Nakabayashi , Naoya Hasegawa , Masamichi Saito , Yosuke Ide , Masahiko Ishizone
发明人： Kazumasa Nishimura , Ryo Nakabayashi , Naoya Hasegawa , Masamichi Saito , Yosuke Ide , Masahiko Ishizone
IPC分类号： G11B5/39
CPC分类号： H01F10/3254 , B82Y25/00 , B82Y40/00 , G01R33/0005 , G01R33/093 , G01R33/098 , G11B5/3906 , H01F10/3272 , H01F10/3295 , H01F41/307 , H01L43/10 , H01L43/12 , Y10T428/31678
摘要： A tunneling magnetic detecting element includes an insulating barrier layer having a layered structure including a Ti—O sublayer and a Ta—O sublayer. The Ta concentration in the insulating barrier layer is set to be more than 0 at % but not more than about 7 at % with respect to a total of 100 at % of Ti and Ta constituting the insulating barrier layer.
摘要翻译：隧道磁检测元件包括具有包括Ti-O子层和Ta-O子层的层状结构的绝缘阻挡层。绝缘阻挡层中的Ta浓度相对于构成绝缘阻挡层的Ti和Ta的总和为100at％，设定为大于0at％但不大于约7at％。

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