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1. 发明授权

US06770547B1 Method for producing a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US06770547B1
公开(公告)日：2004-08-03
申请号：US09698186
申请日：2000-10-30
申请人： Kosuke Inoue , Hiroyuki Tenmei , Yoshihide Yamaguchi , Noriyuki Oroku , Hiroshi Hozoji , Shigeharu Tsunoda , Madoka Minagawa , Naoya Kanda , Ichiro Anjo , Asao Nishimura , Akira Yajima , Kenji Ujiie
发明人： Kosuke Inoue , Hiroyuki Tenmei , Yoshihide Yamaguchi , Noriyuki Oroku , Hiroshi Hozoji , Shigeharu Tsunoda , Madoka Minagawa , Naoya Kanda , Ichiro Anjo , Asao Nishimura , Akira Yajima , Kenji Ujiie
IPC分类号： H01L2120
CPC分类号： H01L23/3157 , H01L21/563 , H01L23/293 , H01L23/295 , H01L23/3114 , H01L2224/02377 , H01L2224/02381 , H01L2224/0401 , H01L2224/05548 , H01L2224/06102 , H01L2224/1403 , H01L2224/14515 , H01L2224/16 , H01L2224/16225 , H01L2224/16227 , H01L2224/1703 , H01L2224/32225 , H01L2224/45144 , H01L2224/73203 , H01L2224/73204 , H01L2924/00011 , H01L2924/01019 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01327 , H01L2924/15311 , H01L2924/3025 , H01L2924/00 , H01L2924/01033 , H01L2924/01034
摘要： A semiconductor apparatus in which flip chip bonding is enabled without any underfill, and which comprises a semiconductor device, an electrically insulating layer formed on the semiconductor device by mask-printing an electrically insulating material containing particles, and an external connection terminal formed on the electrically insulating layer and electrically connected with an electrode of the semiconductor device.
摘要翻译：一种半导体装置，其中可以在没有任何底部填充的情况下进行倒装芯片接合，并且其包括半导体器件，通过掩模印刷含有颗粒的电绝缘材料在半导体器件上形成的电绝缘层，以及形成在电学上的外部连接端子绝缘层并与半导体器件的电极电连接。

2. 发明授权

US07057283B2 Semiconductor device and method for producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07057283B2
公开(公告)日：2006-06-06
申请号：US10825436
申请日：2004-04-16
申请人： Kosuke Inoue , Hiroyuki Tenmei , Yoshihide Yamaguchi , Noriyuki Oroku , Hiroshi Hozoji , Shigeharu Tsunoda , Madoka Minagawa , Naoya Kanda , Ichiro Anjo , Asao Nishimura , Akira Yajima , Kenji Ujiie
发明人： Kosuke Inoue , Hiroyuki Tenmei , Yoshihide Yamaguchi , Noriyuki Oroku , Hiroshi Hozoji , Shigeharu Tsunoda , Madoka Minagawa , Naoya Kanda , Ichiro Anjo , Asao Nishimura , Akira Yajima , Kenji Ujiie
IPC分类号： H01L23/52 , H01L23/48 , H01L29/40
CPC分类号： H01L23/3157 , H01L21/563 , H01L23/293 , H01L23/295 , H01L23/3114 , H01L2224/02377 , H01L2224/02381 , H01L2224/0401 , H01L2224/05548 , H01L2224/06102 , H01L2224/1403 , H01L2224/14515 , H01L2224/16 , H01L2224/16225 , H01L2224/16227 , H01L2224/1703 , H01L2224/32225 , H01L2224/45144 , H01L2224/73203 , H01L2224/73204 , H01L2924/00011 , H01L2924/01019 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01327 , H01L2924/15311 , H01L2924/3025 , H01L2924/00 , H01L2924/01033 , H01L2924/01034
摘要： A semiconductor apparatus in which flip chip bonding is enabled without any underfill, and which comprises a semiconductor device, an electrically insulating layer formed on the semiconductor device by mask-printing an electrically insulating material containing particles, and an external connection terminal formed on the electrically insulating layer and electrically connected with an electrode of the semiconductor device. The electrically insulating layer is formed with a thickness so as to provide α-ray shielding of the semiconductor device.
摘要翻译：一种半导体装置，其中可以在没有任何底部填充的情况下进行倒装芯片接合，并且其包括半导体器件，通过掩模印刷含有颗粒的电绝缘材料在半导体器件上形成的电绝缘层，以及形成在电学上的外部连接端子绝缘层并与半导体器件的电极电连接。电绝缘层形成为具有提供半导体器件的α射线屏蔽的厚度。

3. 发明授权

US06822317B1 Semiconductor apparatus including insulating layer having a protrusive portion 失效
标题翻译：包括具有突出部分的绝缘层的半导体装置
公开(公告)号：US06822317B1
公开(公告)日：2004-11-23
申请号：US09698168
申请日：2000-10-30
申请人： Kosuke Inoue , Hiroyuki Tenmei , Yoshihide Yamaguchi , Noriyuki Oroku , Hiroshi Hozoji , Shigeharu Tsunoda , Madoka Minagawa , Naoya Kanda , Ichiro Anjo , Asao Nishimura , Akira Yajima , Kenji Ujiie
发明人： Kosuke Inoue , Hiroyuki Tenmei , Yoshihide Yamaguchi , Noriyuki Oroku , Hiroshi Hozoji , Shigeharu Tsunoda , Madoka Minagawa , Naoya Kanda , Ichiro Anjo , Asao Nishimura , Akira Yajima , Kenji Ujiie
IPC分类号： H01L23495
CPC分类号： H01L23/3114 , H01L21/563 , H01L23/293 , H01L23/295 , H01L23/3157 , H01L2224/05001 , H01L2224/05124 , H01L2224/05147 , H01L2224/05569 , H01L2224/05573 , H01L2224/05644 , H01L2224/16 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/45144 , H01L2224/73203 , H01L2224/73204 , H01L2924/00011 , H01L2924/01019 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01327 , H01L2924/3025 , H01L2924/00 , H01L2924/00014 , H01L2924/01033 , H01L2924/01034
摘要： A semiconductor apparatus comprising a semiconductor device, an electrically insulating layer formed on the semiconductor device, and an external connection terminal formed on the electrically insulating layer and electrically connected to an electrode of the semiconductor device, wherein a power/ground line and a signal line in a region of from an edge of the electrically insulating layer to a uniform-thickness flat portion of the electrically insulating layer are different in kind of wiring pattern from each other.
摘要翻译：一种半导体器件，包括半导体器件，形成在半导体器件上的电绝缘层和形成在电绝缘层上并与半导体器件的电极电连接的外部连接端子，其中电源/接地线和信号线在从电绝缘层的边缘到电绝缘层的均匀厚度平坦部分的区域中，布线图案的种类不同。

4. 发明授权

US06930388B2 Semiconductor device and method for manufacturing the same and semiconductor device-mounted structure 有权
标题翻译：半导体器件及其制造方法以及半导体器件安装结构
公开(公告)号：US06930388B2
公开(公告)日：2005-08-16
申请号：US09811401
申请日：2001-03-20
申请人： Yoshihide Yamaguchi , Hiroyuki Tenmei , Kosuke Inoue , Noriyuki Oroku , Hiroshi Hozoji , Shigeharu Tsunoda , Naoya Kanda , Madoka Minagawa , Ichiro Anjo , Asao Nishimura , Kenji Ujiie , Akira Yajima
发明人： Yoshihide Yamaguchi , Hiroyuki Tenmei , Kosuke Inoue , Noriyuki Oroku , Hiroshi Hozoji , Shigeharu Tsunoda , Naoya Kanda , Madoka Minagawa , Ichiro Anjo , Asao Nishimura , Kenji Ujiie , Akira Yajima
IPC分类号： H01L23/29 , H01L21/56 , H01L21/60 , H01L23/12 , H01L23/31 , H01L23/485 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L24/12 , H01L23/3114 , H01L23/3171 , H01L24/11 , H01L2224/0231 , H01L2224/0401 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05171 , H01L2224/05644 , H01L2224/13099 , H01L2224/16 , H01L2224/45144 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01016 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/12042 , H01L2924/15311 , H01L2924/30105 , H01L2924/351 , H01L2924/00 , H01L2924/01034 , H01L2924/00014
摘要： A semiconductor device is provided which enables a flip chip connection without use of underfill. The semiconductor device includes a semiconductor element having circuit electrodes and a circuit surface coated with a protecting film. A stress relaxation layer is provided by coating a cured thermoplastic resin onto the protecting film of the circuit surface in a manner which leaves the circuit electrodes exposed and curing it and having an inclination in the edge portion thereof. A wiring layer with wirings is connected to each of the circuit electrodes and disposed so as to make an electrical connection from the circuit electrodes, via the edge portion of the stress relaxation layer, and to a desired portion on the surface of the stress relaxation layer. A protecting film is provided thereon, and an external connection terminal is also provided.
摘要翻译：提供一种半导体器件，其能够在不使用底部填充物的情况下实现倒装芯片连接。半导体器件包括具有电路电极的半导体元件和涂有保护膜的电路表面。通过将固化的热塑性树脂以使电路电极暴露并固化并且在其边缘部分具有倾斜的方式将固化的热塑性树脂涂覆到电路表面的保护膜上来提供应力松弛层。具有布线的布线层连接到每个电路电极，并布置成经由应力松弛层的边缘部分和电路电极的电连接到应力松弛层的表面上的期望部分。在其上设置有保护膜，并且还设置有外部连接端子。

5. 发明授权

US06624504B1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06624504B1
公开(公告)日：2003-09-23
申请号：US09698185
申请日：2000-10-30
申请人： Kosuke Inoue , Hiroyuki Tenmei , Yoshihide Yamaguchi , Noriyuki Oroku , Hiroshi Hozoji , Shigeharu Tsunoda , Madoka Minagawa , Naoya Kanda , Ichiro Anjo , Asao Nishimura , Akira Yajima , Kenji Ujiie
发明人： Kosuke Inoue , Hiroyuki Tenmei , Yoshihide Yamaguchi , Noriyuki Oroku , Hiroshi Hozoji , Shigeharu Tsunoda , Madoka Minagawa , Naoya Kanda , Ichiro Anjo , Asao Nishimura , Akira Yajima , Kenji Ujiie
IPC分类号： H01L23495
CPC分类号： H01L23/293 , H01L21/563 , H01L23/295 , H01L23/3114 , H01L23/3157 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05024 , H01L2224/05568 , H01L2224/05569 , H01L2224/05571 , H01L2224/05573 , H01L2224/16 , H01L2224/45144 , H01L2224/73203 , H01L2224/73204 , H01L2924/00011 , H01L2924/01019 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01327 , H01L2924/15311 , H01L2924/3025 , H01L2924/00 , H01L2924/01033 , H01L2924/01034
摘要： A semiconductor apparatus includes a semiconductor device having circuit electrodes aligned centrally of the semiconductor apparatus. A first electrically insulating layer is formed on said semiconductor device with said circuit electrodes being exposed from said first insulating layer. A second electrically insulating layer is formed on said first insulating layer, and external connection terminals are formed on said second insulating layer. A wiring is formed on said second insulating layer to electrically connect said external connect terminals to said circuit electrodes of said semiconductor device, and a third electrically insulating layer is formed on said second insulating layer and on said wiring. Particles are provided in the second insulating layer to control a shape of said second insulating layer.
摘要翻译：半导体装置包括具有对准半导体装置中心的电路电极的半导体装置。在所述半导体器件上形成第一电绝缘层，所述电路电极从所述第一绝缘层露出。在所述第一绝缘层上形成第二电绝缘层，在所述第二绝缘层上形成外部连接端子。在所述第二绝缘层上形成布线，以将所述外部连接端子电连接到所述半导体器件的所述电路电极，并且在所述第二绝缘层和所述布线上形成第三电绝缘层。在第二绝缘层中提供颗粒以控制所述第二绝缘层的形状。

6. 发明授权

US07122087B2 Method of manufacturing RFID 有权
标题翻译：制造RFID的方法
公开(公告)号：US07122087B2
公开(公告)日：2006-10-17
申请号：US10985934
申请日：2004-11-12
申请人： Naoya Kanda , Kosuke Inoue , Madoka Minagawa , Shigeharu Tsunoda
发明人： Naoya Kanda , Kosuke Inoue , Madoka Minagawa , Shigeharu Tsunoda
IPC分类号： B32B37/00
CPC分类号： G06K19/0775 , G06K19/07745 , G06K19/07749 , H01L2224/16225 , H01L2224/16227 , H01L2224/16238 , H01L2224/81191 , H01L2224/81395 , H01L2924/01079
摘要： There is a method of manufacturing an RFID, in which a semiconductor chip with a memory is bonded to an antenna, so that the information recorded in the memory can be transmitted through the antenna. In the RFID, a PET film, a PEN film, or a sheet of paper is used as the base material of the antenna. The method includes: aligning the semiconductor chip with gold bumps relative to the antenna, in which a metal foil formed of an aluminum or an aluminum alloy is adhered to the base material, including a polyethylene terephthalate or a polyethylene naphthalate; pressing the semiconductor chip to the antenna; and applying ultrasonic waves under an ambient temperature lower than the glass transition temperature of the polyethylene terephthalate or the polyethylene naphthalate, to thereby bond the gold bumps and the metal foil. Thus, the method suppresses the deformation of the antenna.
摘要翻译：存在制造RFID的方法，其中具有存储器的半导体芯片被结合到天线，使得可以通过天线发送记录在存储器中的信息。在RFID中，使用PET膜，PEN膜或纸张作为天线的基材。该方法包括：将半导体芯片与相对于天线的金凸块对准，其中由铝或铝合金形成的金属箔粘附到包括聚对苯二甲酸乙二醇酯或聚萘二甲酸乙二醇酯的基材上; 将半导体芯片按压到天线; 并在低于聚对苯二甲酸乙二醇酯或聚萘二甲酸乙二醇酯的玻璃化转变温度的环境温度下施加超声波，从而结合金凸块和金属箔。因此，该方法抑制天线的变形。

7. 发明申请

US20050130425A1 Method of manufacturing RFID 有权
标题翻译：制造RFID的方法
公开(公告)号：US20050130425A1
公开(公告)日：2005-06-16
申请号：US10985934
申请日：2004-11-12
申请人： Naoya Kanda , Kosuke Inoue , Madoka Minagawa , Shigeharu Tsunoda
发明人： Naoya Kanda , Kosuke Inoue , Madoka Minagawa , Shigeharu Tsunoda
IPC分类号： G06K19/07 , G06K19/077 , H01R43/02 , H01L21/302 , H01L21/461
CPC分类号： G06K19/0775 , G06K19/07745 , G06K19/07749 , H01L2224/16225 , H01L2224/16227 , H01L2224/16238 , H01L2224/81191 , H01L2224/81395 , H01L2924/01079
摘要： There is a method of manufacturing an RFID, in which a semiconductor chip with a memory is bonded to an antenna, so that the information recorded in the memory can be transmitted through the antenna. In the RFID, a PET film, a PEN film, or a sheet of paper is used as the base material of the antenna. The method includes: aligning the semiconductor chip with gold bumps relative to the antenna, in which a metal foil formed of an aluminum or an aluminum alloy is adhered to the base material, including a polyethylene terephthalate or a polyethylene naphthalate; pressing the semiconductor chip to the antenna; and applying ultrasonic waves under an ambient temperature lower than the glass transition temperature of the polyethylene terephthalate or the polyethylene naphthalate, to thereby bond the gold bumps and the metal foil. Thus, the method suppresses the deformation of the antenna.
摘要翻译：存在制造RFID的方法，其中具有存储器的半导体芯片被结合到天线，使得可以通过天线发送记录在存储器中的信息。在RFID中，使用PET膜，PEN膜或纸张作为天线的基材。该方法包括：将半导体芯片与相对于天线的金凸块对准，其中由铝或铝合金形成的金属箔粘附到包括聚对苯二甲酸乙二醇酯或聚萘二甲酸乙二醇酯的基材上; 将半导体芯片按压到天线; 并在低于聚对苯二甲酸乙二醇酯或聚萘二甲酸乙二醇酯的玻璃化转变温度的环境温度下施加超声波，从而结合金凸块和金属箔。因此，该方法抑制天线的变形。

8. 发明授权

US06402014B1 Method of forming bumps 失效
标题翻译：形成凸块的方法
公开(公告)号：US06402014B1
公开(公告)日：2002-06-11
申请号：US09689804
申请日：2000-10-13
申请人： Kosuke Inoue , Asao Nishimura , Takamichi Suzuki , Teru Fujii , Masayuki Morishima , Yasuyuki Nakajima , Noriyuki Oroku
发明人： Kosuke Inoue , Asao Nishimura , Takamichi Suzuki , Teru Fujii , Masayuki Morishima , Yasuyuki Nakajima , Noriyuki Oroku
IPC分类号： B23K3512
CPC分类号： H05K3/3478 , B23K3/0623 , B23K2101/40 , H01L21/6835 , H01L24/11 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/11003 , H01L2224/11334 , H01L2224/13099 , H01L2224/45144 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H05K2203/0278 , H05K2203/0292 , H05K2203/041 , H05K2203/043 , H05K2203/0557 , H01L2924/00 , H01L2224/05599 , H01L2224/05099
摘要： In the conventional bump forming method that can be applied to a semiconductor device in which a large number of bumps are required to form, there are various limitations to the material of which the bumps are made, to enough cubic volume of bumps and to small scattering of the bump height. According to the invention, solder balls and a tool having a large number of through-holes are used, and under the condition that the through-holes of the tool are aligned with the pads of the semiconductor device, the solder balls are charged into the through-holes, pressed to be fixed on the pads, and then reflowed to form bumps.
摘要翻译：在可以应用于需要大量凸块的半导体器件的常规凸点形成方法中，对于形成凸块的材料，足够的立方体积的凸块和小的散射存在各种限制的凸起高度。根据本发明，使用焊球和具有多个通孔的工具，并且在工具的通孔与半导体器件的焊盘对准的条件下，将焊球充入通孔被按压固定在垫上，然后回流以形成凸块。

9. 发明授权

US07190072B2 RFID-chip having RFID-tag or magnifying electrode 有权
标题翻译：具有RFID标签或放大电极的RFID芯片
公开(公告)号：US07190072B2
公开(公告)日：2007-03-13
申请号：US11075798
申请日：2005-03-10
申请人： Naoya Kanda , Madoka Minagawa , Kosuke Inoue , Hiroshi Homma
发明人： Naoya Kanda , Madoka Minagawa , Kosuke Inoue , Hiroshi Homma
IPC分类号： H01L23/48 , H01L23/52 , B29C65/00
CPC分类号： G06K19/07749 , G06K19/0775 , H01L2224/16 , H01L2224/16225 , H01L2224/16227 , H01L2224/81395 , H01L2924/01079 , H01L2924/01327 , H01L2924/00
摘要： When an RFID-tag is formed by joining a semiconductor chip (RFID chip) to an antenna consisting of a rolled metal foil or the like using ultrasonic waves, the pressure impressed to the semiconductor chip is suppressed to avoid the damage of the semiconductor chip. For this purpose, the present invention provides an RFID-tag 1 wherein gold bumps are joined to the metal foil by pressing the gold bumps formed on the semiconductor chip against an antenna member, and impressing ultrasonic waves; and the RFID-tag wherein a matte surface having a low glossiness is formed on the metal foil, or a surface having shallow rolling streaks is formed on the metal foil, and gold bumps are joined to the surface.
摘要翻译：当通过使用超声波将半导体芯片（RFID芯片）接合到由轧制金属箔等构成的天线来形成RFID标签时，抑制了向半导体芯片施加的压力，以避免半导体芯片的损坏。为此，本发明提供一种RFID标签1，其中通过将形成在半导体芯片上的金凸块压在天线构件上，并且施加超声波，将金凸块接合到金属箔上; 并且在金属箔上形成具有低光泽度的无光泽表面的RFID标签，或者在金属箔上形成具有浅轧条纹的表面，并且金凸块接合到表面。

10. 发明申请

US20050230791A1 RFID-chip having RFID-tag or magnifying electrode 有权
标题翻译：具有RFID标签或放大电极的RFID芯片
公开(公告)号：US20050230791A1
公开(公告)日：2005-10-20
申请号：US11075798
申请日：2005-03-10
申请人： Naoya Kanda , Madoka Minagawa , Kosuke Inoue , Hiroshi Homma
发明人： Naoya Kanda , Madoka Minagawa , Kosuke Inoue , Hiroshi Homma
IPC分类号： H01L21/60 , G06K19/077 , H01L21/607 , H01L23/495
CPC分类号： G06K19/07749 , G06K19/0775 , H01L2224/16 , H01L2224/16225 , H01L2224/16227 , H01L2224/81395 , H01L2924/01079 , H01L2924/01327 , H01L2924/00
摘要： When an RFID-tag is formed by joining a semiconductor chip (RFID chip) to an antenna consisting of a rolled metal foil or the like using ultrasonic waves, the pressure impressed to the semiconductor chip is suppressed to avoid the damage of the semiconductor chip. For this purpose, the present invention provides an RFID-tag 1 wherein gold bumps are joined to the metal foil by pressing the gold bumps formed on the semiconductor chip against an antenna member, and impressing ultrasonic waves; and the RFID-tag wherein a matte surface having a low glossiness is formed on the metal foil, or a surface having shallow rolling streaks is formed on the metal foil, and gold bumps are joined to the surface.
摘要翻译：当通过使用超声波将半导体芯片（RFID芯片）接合到由轧制金属箔等构成的天线来形成RFID标签时，抑制了向半导体芯片施加的压力，以避免半导体芯片的损坏。为此，本发明提供一种RFID标签1，其中通过将形成在半导体芯片上的金凸块压在天线构件上，并且施加超声波，将金凸块接合到金属箔上; 并且在金属箔上形成具有低光泽度的无光泽表面的RFID标签，或者在金属箔上形成具有浅轧条纹的表面，并且金凸块接合到表面。

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