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    • 5. 发明申请
    • Wafer-retaining carrier, double-side grinding device using the same, and double-side grinding method for wafer
    • 晶圆保持架,使用其的双面研磨装置以及晶圆的双面研磨方法
    • US20060178089A1
    • 2006-08-10
    • US10549453
    • 2004-03-12
    • Junichi Ueno
    • Junichi Ueno
    • B24B7/30B24B7/00B24B1/00
    • B24B37/28
    • The present invention is a wafer-holding carrier 1 wherein the carrier has polishing agent-passing holes 3, 4 for passing the polishing agent through as well as wafer-holding holes 2 for containing and holding wafers, and the total area of the polishing agent-passing holes occupies 15% or more of a main surface of the carrier. Preferably, the total area of the polishing agent-passing holes occupies 30% or less of the main surface of the carrier, and each of the polishing agent-passing holes has a circular shape of a diameter of 5 mm-30 mm, and the holes are arranged in the form of concentric circle or lattice on the carrier entirely. Thereby, there can be provided an art that even when performing polishing by using a hard polishing pad in a double-side polishing apparatus, particularly, a double-side polishing apparatus having a carrier moving circularly without rotation, it is not necessary to reform the apparatus largely, and the wafer of high flatness can be finished without a tapered shape, peripheral sag, and such.
    • 本发明是晶片保持载体1,其中载体具有用于使研磨剂通过的抛光剂通过孔3,4以及用于容纳和保持晶片的晶片保持孔2,并且抛光剂的总面积 通孔占据载体主表面的15%或更多。 优选地,抛光剂通过孔的总面积占载体主表面的30%或更少,并且每个抛光剂通过孔具有直径为5mm-30mm的圆形形状,并且 孔完全以载体同心圆或格子的形式排列。 因此,可以提供一种技术,即使在双面研磨装置中,通过使用硬质研磨垫进行研磨,特别是具有不旋转圆周移动的载体的双面研磨装置,也不需要对 装置很大程度上可以在没有锥形形状,周边凹陷等的情况下完成高平坦度的晶圆。
    • 7. 发明授权
    • Double-side polishing apparatus
    • 双面抛光装置
    • US08834234B2
    • 2014-09-16
    • US13509696
    • 2010-11-16
    • Junichi UenoKazuya SatoSyuichi Kobayashi
    • Junichi UenoKazuya SatoSyuichi Kobayashi
    • B24B37/013B24B37/08
    • B24B37/013B24B37/08
    • A double-side polishing apparatus including at least: upper and lower turn tables each having a polishing pad attached thereto; a carrier having a holding hole formed therein for holding a wafer between the upper and lower turn tables; a sensor for detecting a thickness of the wafer during polishing, the sensor being disposed in a through-hole provided at the upper turn table in a direction of an upper-turn-table rotation axis; and a sensor holder for holding the sensor, wherein a material of the sensor holder is quartz. As a result, there is provided a double-side polishing apparatus that can polish a wafer while the difference from the target wafer thickness is reduced by surely inhibiting deformation of the sensor holder due to the influence of heat generated during the polishing of the wafer.
    • 一种双面抛光装置,其至少包括:上下转台,每个具有附着在其上的抛光垫; 具有形成在其中用于将晶片保持在上下转台之间的保持孔的载体; 用于在抛光期间检测晶片的厚度的传感器,所述传感器设置在设置在所述上​​转台上的通孔中,所述通孔沿上转盘旋转轴线的方向; 以及用于保持传感器的传感器保持器,其中传感器保持器的材料是石英。 结果,提供了一种双面抛光装置,其可以通过可靠地抑制由于在晶片的抛光期间产生的热的影响而可靠地抑制传感器保持器的变形,从而可以减少与目标晶片厚度之间的差异。
    • 8. 发明授权
    • Double-side polishing method for wafer
    • 晶圆双面抛光方法
    • US07727053B2
    • 2010-06-01
    • US11988830
    • 2006-06-28
    • Junichi UenoSyuichi Kobayashi
    • Junichi UenoSyuichi Kobayashi
    • B24B1/00
    • B24B37/08H01L21/02024
    • There is provided a double-side polishing method for a wafer of sandwiching a wafer held in a carrier between upper and lower turn tables each having a polishing pad attached thereto and simultaneously polishing both surfaces of the wafer while supplying a slurry to a space between the upper and lower turn tables from a plurality of slurry supply holes provided in the upper turn table, wherein a polishing amount at an outer peripheral portion of the wafer to be polished is adjusted and outer peripheral sag of the wafer is suppressed by supplying the slurry in such a manner that an amount of the slurry supplied from the slurry supply holes provided on an outer side relative to the center of rotation of the upper turn table becomes larger than an amount of the slurry supplied from the slurry supply holes provided on an inner side relative to the same at the time of polishing both the surfaces of the wafer. As a result, the double-side polishing method which can suppress occurrence of the outer peripheral sag of the wafer when the wafer is subjected to double-side polishing can be provided.
    • 提供了一种用于将保持在载具上的晶片夹持在上下转台之间的晶片的双面抛光方法,每个晶片具有附接到其上的抛光垫,同时抛光晶片的两个表面,同时将浆料供应到 设置在上转台中的多个浆料供给孔的上下转盘,其中调整抛光晶片的外周部分的抛光量,并通过将浆料供给来抑制晶片的外周下垂 从设置在上转台的旋转中心的外侧的浆料供给孔供给的浆料的量比从设置在内侧的浆料供给孔供给的浆料的量大 相对于在抛光晶片的两个表面时相同。 结果,可以提供可以抑制当晶片进行双面抛光时晶片的外周下垂的发生的双面研磨方法。
    • 9. 发明授权
    • Carrier for a double-side polishing apparatus, double-side polishing apparatus using this carrier, and double-side polishing method
    • 用于双面抛光装置的载体,使用该载体的双面抛光装置和双面抛光方法
    • US09327382B2
    • 2016-05-03
    • US12863674
    • 2009-02-16
    • Junichi UenoKazuya SatoSyuichi Kobayashi
    • Junichi UenoKazuya SatoSyuichi Kobayashi
    • B24B37/04B24B37/08B24B37/28B24B37/32
    • B24B37/28B24B37/042B24B37/08
    • A carrier for a double-side polishing apparatus comprising at least: a metallic carrier base that is arranged between upper and lower turn tables having polishing pads attached thereto and has a holding hole formed therein to hold a wafer sandwiched between the upper and lower turn tables at the time of polishing; and a ring-like resin insert that is arranged along an inner peripheral portion of the holding hole of the carrier base and is in contact with a peripheral portion of the held wafer, wherein an inner peripheral end portion of the holding hole of the carrier base has an upwardly opening tapered surface, an outer peripheral portion of the ring-like insert has a reverse tapered surface with respect to the tapered surface of the holding hole of the carrier base, and the resin insert is fitted in the holding hole of the carrier base through the tapered surface.
    • 一种用于双面抛光装置的载体,至少包括:金属载体基座,其布置在上下转台之间,具有安装在其上的抛光垫,并具有形成在其中的保持孔,以夹持夹在上下转台之间的晶片 抛光时; 以及环状树脂插入件,其沿着所述承载基座的保持孔的内周部配置并与所述保持晶片的周边部分接触,其中,所述承载器基座的所述保持孔的内周端部 具有向上开口的锥形表面,环形插入件的外周部分相对于承载器基座的保持孔的锥形表面具有倒锥形表面,并且树脂插入件装配在载体的保持孔中 基部通过锥形表面。
    • 10. 发明授权
    • Polishing pad, manufacturing method thereof and polishing method
    • 抛光垫,其制造方法和抛光方法
    • US08545291B2
    • 2013-10-01
    • US13379588
    • 2010-06-22
    • Kohki ItoyamaDaisuke TakahashiJunichi UenoSyuichi Kobayashi
    • Kohki ItoyamaDaisuke TakahashiJunichi UenoSyuichi Kobayashi
    • B24B37/04
    • B24B37/24B24D3/32H01L21/02024
    • A polishing pad capable of improving an affinity to polishing liquid and stabilizing polishing performance is provided. A polishing pad 10 is equipped with a urethane sheet 2. The urethane sheet 2 has a polishing surface P for polishing an object to be polished. The urethane sheet 2 is formed by a dry molding method and is formed by slicing a polyurethane foamed body which is obtained by reacting and curing mixed liquid in which an isocyanate-group containing compound, water, a foam control agent and a polyamine compound are mixed. Foams 3 are dispersed approximately uniformly inside the urethane sheet 2. Opened pores 4 which are opened parts of the foams 3 are formed at the polishing surface P. Inside the urethane sheet 2, the foams 3 formed adjacently to each other are communicated by communication holes 9, and the communication holes 9 are formed at a ratio of 800 holes/cm2 or more when observed from a side of the polishing surface P. Polishing liquid moves via the communication holes 9 and the foams 3.
    • 提供了能够提高对抛光液的亲和性和稳定研磨性能的抛光垫。 抛光垫10配备有聚氨酯片2.聚氨酯片2具有用于抛光待抛光物体的抛光面P. 氨基甲酸酯片2通过干式成型法形成,通过将通过使含有异氰酸酯基的化合物,水,泡沫调节剂和多胺化合物混合的混合液反应固化而得到的聚氨酯发泡体切片而形成 。 泡沫3大致均匀地分散在聚氨酯片材2内。在研磨面P上形成作为泡沫体3的开口部的开口孔4.在氨基甲酸酯片材2的内部,相邻形成的泡沫体3通过连通孔 如图9所示,并且当从抛光表面P的侧面观察时,连通孔9以800个孔/ cm 2以上的比例形成。抛光液体经由连通孔9和泡沫3移动。