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    • 7. 发明申请
    • HIGH-FREQUENCY MEASURING DEVICE AND HIGH-FREQUENCY MEASURING DEVICE CALIBRATION METHOD
    • 高频测量装置和高频测量装置校准方法
    • US20110234201A1
    • 2011-09-29
    • US13048104
    • 2011-03-15
    • Ryohei TANAKAYoshifumi IBUKI
    • Ryohei TANAKAYoshifumi IBUKI
    • G01R23/02
    • H01J37/32183H01J37/32935
    • A method is provided for calibrating a high-frequency, measuring device so as to accurately measure high-frequency parameters within a chamber. A calibration parameter is calculated from impedance of a first set of three reference loads measured by a high-frequency measuring device and the true values of those impedances. A calibration parameter is calculated from an S parameter measured between a connection point where the high-frequency measuring device is connected and the inside of the chamber of a plasma processing device. An impedance within the chamber is calculated from a voltage signal and a current signal calibrated using the above calibration parameters. A second set of three reference loads, which include the impedance calculated in Step 5 and encompass a range narrower than that encompassed by the first set of three reference loads, is determined. Another calibration parameter is calculated from impedances of the second set of three reference loads measured by the high-frequency measuring device and the true values of those impedances, and a detected voltage signal and a detected current signal are calibrated using the above calibration parameters.
    • 提供了一种用于校准高频测量装置以便精确地测量腔室内的高频参数的方法。 从由高频测量装置测量的第一组三个参考载荷的阻抗和这些阻抗的真实值的阻抗来计算校准参数。 根据在连接高频测量装置的连接点与等离子体处理装置的室内之间测量的S参数来计算校准参数。 从电压信号和使用上述校准参数校准的电流信号计算室内的阻抗。 第二组三个参考载荷,其包括在步骤5中计算的阻抗并且包含比由第一组三个参考载荷所包围的阻抗窄的范围。 通过由高频测量装置测量的第二组三个参考载荷的阻抗和这些阻抗的真实值的阻抗计算另一个校准参数,并且使用上述校准参数校准检测到的电压信号和检测到的电流信号。