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    • 2. 发明授权
    • Preparation method of selective growth silicon layer doped with
impurities
    • 选择性生长硅掺杂杂质的方法
    • US5004702A
    • 1991-04-02
    • US338794
    • 1989-04-17
    • Shuichi SamataYoshiaki Matsushita
    • Shuichi SamataYoshiaki Matsushita
    • H01L21/225H01L21/285H01L21/8238
    • H01L21/28525H01L21/2257H01L21/823814
    • A semiconductor substrate having a surface region of P type and a surface region of N type is formed, then an insulating membrane is formed on the semiconductor substrate. The first contact hole which is formed in said region of P type and the second contact hole which is connected to said region of N type are formed by the same process as that for said insulating membrane. Non-doped silicon layer is grown in said first and second contact holes by the same selective growth process, in a single reactive furnace. A diffusion source layer containing impurities of P type is formed on said first contact hole and a diffusion source layer containing impurities of N type on said second contact hole. Impurities are diffused from said diffusion layers to said silicon layers, and said diffusion source layer is then removed. A metal wire layer is formed by connecting it to said silicon layer.
    • 形成具有P型表面区域和N型表面区域的半导体衬底,然后在半导体衬底上形成绝缘膜。 在所述P型区域中形成的第一接触孔和与所述N型区域连接的第二接触孔通过与所述绝缘膜相同的工艺形成。 在单个反应炉中,非掺杂硅层通过相同的选择性生长工艺在所述第一和第二接触孔中生长。 在所述第一接触孔上形成含有P型杂质的扩散源层和在所述第二接触孔上含有N型杂质的扩散源层。 杂质从所述扩散层扩散到所述硅层,然后去除所述扩散源层。 通过将金属线层连接到所述硅层而形成金属线层。
    • 5. 发明授权
    • Vapor phase epitaxial growth apparatus
    • 气相外延生长装置
    • US5246500A
    • 1993-09-21
    • US937743
    • 1992-09-01
    • Shuichi SamataYoshiaki Matsushita
    • Shuichi SamataYoshiaki Matsushita
    • C30B25/10C23C16/455C30B25/14H01L21/00H01L21/205
    • H01L21/67115C23C16/455C30B25/14
    • A vapor phase growth apparatus is disclosed, which comprises a boat accommodating therein a plurality of semiconductor substrates, an inner tube surrounding the boat, an outer tube disposed outside the inner tube, a heater disposed outside the outer tube, a reaction gas injection nozzle disposed inside the inner tube and operating to eject a reaction gas against the semiconductor substrates, and a hydrogen halide gas injection nozzle disposed between the inner tube and the outer tube and operating to inject the hydrogen halide gas, wherein exhaust openings for exhausting the reaction gas are formed through a wall of the inner tube, thereby suppressing deposition of a reactant on an outer surface of the inner tube and an inner surface of the outer tube. The reaction gas injected from the reaction gas injection nozzle flows in the portion formed between the inner tube and the outer tube along with in the inner tube. Since the portion between the inner tube and the outer tube is heated by the heater disposed outside the outer tube, a reactant tends to be deposited on the outer surface of the inner tube and the inner surface of the outer tube. By injecting the hydrogen halide gas from the hydrogen halide gas injection nozzle to the portion formed between the inner tube and the outer tube, the deposition of the reactant can be suppressed.
    • 公开了一种气相生长装置,其包括容纳多个半导体衬底的舟皿,围绕舟皿的内管,设置在内管外部的外管,设置在外管外部的加热器,设置在反应气体注入喷嘴 在内管内部并且操作以将反应气体喷射到半导体基板上;以及卤化氢气体注入喷嘴,其设置在内管和外管之间并且操作以喷射卤化氢气体,其中用于排出反应气体的排气口为 通过内管的壁形成,从而抑制反应物沉积在内管的外表面和外管的内表面上。 从反应气体喷射喷嘴喷射的反应气体与内管一起流入形成在内管和外管之间的部分。 由于内管和外管之间的部分被设置在外管外部的加热器加热,反应物倾向于沉积在内管的外表面和外管的内表面上。 通过将卤化氢气体从卤化氢气体注入喷嘴注入到形成在内管和外管之间的部分,可以抑制反应物的沉积。
    • 10. 发明授权
    • Method of growing a resistive epitaxial layer on a short lifetime
epi-layer
    • 在短寿命外延层上生长电阻性外延层的方法
    • US4579601A
    • 1986-04-01
    • US635434
    • 1984-07-27
    • Shuichi SamataYoshiaki Matsushita
    • Shuichi SamataYoshiaki Matsushita
    • H01L21/70H01L21/322H01L21/324H01L21/8242H01L27/10H01L29/167H01L21/20H01L21/225H01L21/265
    • H01L27/10844H01L21/322H01L21/324H01L29/167Y10S438/934Y10S438/953
    • A method for manufacturing a semiconductor device has the steps of: forming a first thin single-crystal semiconductor layer on a semiconductor substrate of one conductivity type which contains oxygen, the first thin single-crystal semiconductor layer having a higher resistivity than that of the semiconductor substrate and having the same conductivity type as that of the semiconductor substrate; ion-implanting an electrically inactive impurity in the first thin single-crystal semiconductor layer; forming a second thin single-crystal semiconductor layer on the first thin single-crystal semiconductor layer, the second thin single-crystal semiconductor layer having the same conductivity type as that of the semiconductor substrate and having a higher resistivity than that of the semiconductor substrate; performing annealing for not less than four hours at a temperature of 550.degree. C. to 900.degree. C. after the electrically inactive impurity is ion-implanted; and forming a cell of a dynamic random access memory in the second thin single-crystal semiconductor layer, the cell having one transistor and one capacitor.
    • 半导体器件的制造方法具有以下步骤:在含有氧的一种导电型的半导体衬底上形成第一薄型单晶半导体层,第一薄型单晶半导体层的电阻率高于半导体 并且具有与半导体衬底相同的导电类型; 在第一薄单晶半导体层中离子注入电惰性杂质; 在所述第一薄单晶半导体层上形成第二薄单晶半导体层,所述第二薄单晶半导体层具有与所述半导体衬底相同的导电类型并且具有比所述半导体衬底更高的电阻率; 在离子注入不活泼的杂质后,在550〜900℃的温度下进行不少于4小时的退火。 以及在所述第二薄单晶半导体层中形成动态随机存取存储器的单元,所述单元具有一个晶体管和一个电容器。