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1. 发明授权

US09046470B2 Optical biosensor, bio-sensing system including the same, and method of fabricating the optical biosensor 有权
标题翻译：光学生物传感器，包括其的生物传感系统以及制造光学生物传感器的方法
公开(公告)号：US09046470B2
公开(公告)日：2015-06-02
申请号：US13833778
申请日：2013-03-15
申请人： Yoon-dong Park , Kyoung-won Na , Sung Dong Suh , Dong-mo Im
发明人： Yoon-dong Park , Kyoung-won Na , Sung Dong Suh , Dong-mo Im
IPC分类号： G01N27/30 , G01N21/17 , B01L9/00 , G01N21/77 , G01N21/03 , G01N15/14 , B01L3/00 , G02B6/12 , G01N27/447
CPC分类号： G01N21/17 , B01L3/5027 , B01L9/527 , B01L2200/027 , B01L2200/10 , B01L2300/0636 , B01L2300/0816 , G01N15/1484 , G01N21/7703 , G01N21/7746 , G01N27/44721 , G01N2021/0346 , G01N2021/7793 , G02B2006/12138 , Y10T29/49117
摘要： An optical biosensor including a bio-sensing unit configured to receive an optical signal and generating a sensed optical signal, the wavelength of which varies according to a result of sensing a biomaterial; and a spectrometer including a plurality of ring resonators for dividing the sensed optical signal according to a wavelength and generating a plurality of output optical signals, respectively.
摘要翻译：一种光生物传感器，包括生物感测单元，其被配置为接收光信号并产生感测的光信号，其波长根据感测生物材料的结果而变化; 以及包括多个环形谐振器的光谱仪，用于分别根据波长分辨感测的光信号并产生多个输出光信号。

2. 发明申请

US20110133063A1 Optical waveguide and coupler apparatus and method of manufacturing the same 有权
标题翻译：光波导和耦合器装置及其制造方法
公开(公告)号：US20110133063A1
公开(公告)日：2011-06-09
申请号：US12911415
申请日：2010-10-25
申请人： Ho-chul Ji , Ki-nam Kim , Yong-woo Hyung , Kyoung-won Na , Kyoung-ho Ha , Yoon-dong Park , Dae-lok Bae , Jin-kwon Bok , Pil-kyu Kang , Sung-dong Suh , Seong-gu Kim , Dong-jae Shin , In-sung Joe
发明人： Ho-chul Ji , Ki-nam Kim , Yong-woo Hyung , Kyoung-won Na , Kyoung-ho Ha , Yoon-dong Park , Dae-lok Bae , Jin-kwon Bok , Pil-kyu Kang , Sung-dong Suh , Seong-gu Kim , Dong-jae Shin , In-sung Joe
IPC分类号： G02B6/42 , G02B6/02 , G02B6/34 , G02B6/26 , H01L31/12
CPC分类号： G02B6/124 , G02B6/122 , G02B6/30 , G02B6/34 , G02B6/4214 , G02B2006/12104
摘要： Optical waveguide and coupler devices and methods include a trench formed in a bulk semiconductor substrate, for example, a bulk silicon substrate. A bottom cladding layer is formed in the trench, and a core region is formed on the bottom cladding layer. A reflective element, such as a distributed Bragg reflector can be formed under the coupler device and/or the waveguide device. Because the optical devices are integrated in a bulk substrate, they can be readily integrated with other devices on a chip or die in accordance with silicon photonics technology. Specifically, for example, the optical devices can be integrated in a DRAM memory circuit chip die.
摘要翻译：光波导和耦合器器件和方法包括形成在体半导体衬底中的沟槽，例如体硅衬底。在沟槽中形成底层，在底面包层上形成芯部区域。可以在耦合器装置和/或波导装置下形成反射元件，例如分布式布拉格反射器。因为光学器件集成在大容量衬底中，所以它们可以根据硅光子学技术容易地与芯片上或芯片上的其它器件集成。具体地，例如，光学器件可以集成在DRAM存储器电路芯片芯片中。

3. 发明授权

US08791405B2 Optical waveguide and coupler apparatus and method of manufacturing the same 有权
标题翻译：光波导和耦合器装置及其制造方法
公开(公告)号：US08791405B2
公开(公告)日：2014-07-29
申请号：US12911415
申请日：2010-10-25
申请人： Ho-chul Ji , Ki-nam Kim , Yong-woo Hyung , Kyoung-won Na , Kyoung-ho Ha , Yoon-dong Park , Dae-lok Bae , Jin-kwon Bok , Pil-kyu Kang , Sung-dong Suh , Seong-gu Kim , Dong-jae Shin , In-sung Joe
发明人： Ho-chul Ji , Ki-nam Kim , Yong-woo Hyung , Kyoung-won Na , Kyoung-ho Ha , Yoon-dong Park , Dae-lok Bae , Jin-kwon Bok , Pil-kyu Kang , Sung-dong Suh , Seong-gu Kim , Dong-jae Shin , In-sung Joe
IPC分类号： G01J1/04
CPC分类号： G02B6/124 , G02B6/122 , G02B6/30 , G02B6/34 , G02B6/4214 , G02B2006/12104
摘要： Optical waveguide and coupler devices and methods include a trench formed in a bulk semiconductor substrate, for example, a bulk silicon substrate. A bottom cladding layer is formed in the trench, and a core region is formed on the bottom cladding layer. A reflective element, such as a distributed Bragg reflector can be formed under the coupler device and/or the waveguide device. Because the optical devices are integrated in a bulk substrate, they can be readily integrated with other devices on a chip or die in accordance with silicon photonics technology. Specifically, for example, the optical devices can be integrated in a DRAM memory circuit chip die.
摘要翻译：光波导和耦合器器件和方法包括形成在体半导体衬底中的沟槽，例如体硅衬底。在沟槽中形成底层，在底面包层上形成芯部区域。可以在耦合器装置和/或波导装置下形成反射元件，例如分布式布拉格反射器。因为光学器件集成在大容量衬底中，所以它们可以根据硅光子学技术容易地与芯片上或芯片上的其它器件集成。具体地，例如，光学器件可以集成在DRAM存储器电路芯片芯片中。

4. 发明授权

US08842942B2 Optical modulator formed on bulk-silicon substrate 有权
标题翻译：在体硅衬底上形成的光调制器
公开(公告)号：US08842942B2
公开(公告)日：2014-09-23
申请号：US13012036
申请日：2011-01-24
申请人： Dong-jae Shin , Kyoung-won Na , Sung-dong Suh , Kyoung-ho Ha , Seong-gu Kim , Ho-chul Ji , In-sung Joe , Jin-kwon Bok , Pil-kyu Kang
发明人： Dong-jae Shin , Kyoung-won Na , Sung-dong Suh , Kyoung-ho Ha , Seong-gu Kim , Ho-chul Ji , In-sung Joe , Jin-kwon Bok , Pil-kyu Kang
IPC分类号： G02B6/42
CPC分类号： G02F1/2257 , G02F2001/212
摘要： An optical modulator comprises a bulk-silicon substrate comprising a trench having a predetermined width and a predetermined depth. A bottom cladding layer is formed in the trench, and a plurality of waveguides and a phase modulation unit are formed on the bottom cladding layer. A top cladding layer is formed on the plurality of waveguides and the phase modulation unit.
摘要翻译：光学调制器包括体硅衬底，其包括具有预定宽度和预定深度的沟槽。在沟槽中形成底层，在底面包层上形成多个波导管和相位调制单元。在多个波导和相位调制单元上形成顶层。

5. 发明申请

US20130015546A1 MULTI-LAYER PHOTOELECTRIC INTEGRATED CIRCUIT DEVICE WITH OVERLAPPING DEVICES 审中-公开
标题翻译：具多重装置的多层光电集成电路装置
公开(公告)号：US20130015546A1
公开(公告)日：2013-01-17
申请号：US13546363
申请日：2012-07-11
申请人： In-sung Joe , Sung-dong Suh , Kyoung-won Na , Kyoung-ho Ha , Seong-gu Kim , Young-hwack Shin
发明人： In-sung Joe , Sung-dong Suh , Kyoung-won Na , Kyoung-ho Ha , Seong-gu Kim , Young-hwack Shin
IPC分类号： H01L31/0232 , H01L31/02
CPC分类号： G02B6/124 , G02B6/12002 , G02B6/12004 , G02B6/122
摘要： An integrated circuit device includes a plurality of device layers disposed on a substrate. A first one of the device layers includes at least one photo device and/or at least one electronic device and a second one of the device layers includes at least one photo device overlying the at least one photo device and/or the at least one electronic device of the first one of the device layers.
摘要翻译：集成电路器件包括设置在衬底上的多个器件层。设备层中的第一个包括至少一个照片设备和/或至少一个电子设备，并且设备层中的第二个设备层包括覆盖至少一个照片设备和/或至少一个电子设备的至少一个照片设备第一个设备层的设备。

6. 发明申请

US20110134679A1 MEMORY MODULE HAVING OPTICAL BEAM PATH, APPARATUS INCLUDING THE MODULE, AND METHOD OF FABRICATING THE MODULE 审中-公开
标题翻译：具有光束路径的存储模块，包括模块的装置以及制作模块的方法
公开(公告)号：US20110134679A1
公开(公告)日：2011-06-09
申请号：US12961542
申请日：2010-12-07
申请人： Sung-dong SUH , Kyoung-won Na , Kyoung-ho Ha , Seong-gu Kim , Ho-chul Ji , In-sung Joe
发明人： Sung-dong SUH , Kyoung-won Na , Kyoung-ho Ha , Seong-gu Kim , Ho-chul Ji , In-sung Joe
IPC分类号： G11C13/04 , G02B6/32 , H05K3/30
CPC分类号： G02B6/4214 , G02B6/3652 , G02B6/3692 , G02B6/4206 , G02B6/43 , H05K1/0274 , H05K1/141 , H05K2201/10159 , Y10T29/4913
摘要： A memory module may include at least one memory package including an optical signal input/output (I/O) unit and a first optical beam path and a printed circuit board (PCB) on which the memory package is mounted. The PCB may have a second optical beam path configured to transmit an optical signal to the optical signal I/O unit. The memory module may further include a connecting body configured to mount the memory package on the PCB and match a refractive index of the first optical beam path with a refractive index of the second optical beam path.
摘要翻译：存储器模块可以包括至少一个包括光信号输入/输出（I / O）单元和第一光束路径以及印刷电路板（PCB）的存储器封装，其上安装有存储器封装。 PCB可以具有被配置为将光信号发送到光信号I / O单元的第二光束路径。存储器模块还可以包括被配置为将存储器封装安装在PCB上并将第一光束路径的折射率与第二光束路径的折射率相匹配的连接体。

7. 发明授权

US08319291B2 Non-volatile memory device with data storage layer 有权
标题翻译：具有数据存储层的非易失性存储器件
公开(公告)号：US08319291B2
公开(公告)日：2012-11-27
申请号：US12557580
申请日：2009-09-11
申请人： Deok-kee Kim , June-mo Koo , Ju-chul Park , Kyoung-won Na , Dong-seok Suh , Bum-seok Seo , Yoon-dong Park
发明人： Deok-kee Kim , June-mo Koo , Ju-chul Park , Kyoung-won Na , Dong-seok Suh , Bum-seok Seo , Yoon-dong Park
IPC分类号： H01L47/00
CPC分类号： G11C13/0004 , G11C13/0007 , G11C2213/32 , G11C2213/34 , G11C2213/71 , H01L27/101 , H01L27/249 , H01L45/04 , H01L45/12 , H01L45/1226 , H01L45/146 , H01L45/1666
摘要： Provided is a non-volatile memory device including at least one horizontal electrode, at least one vertical electrode, at least one data storage layer and at least one reaction prevention layer. The least one vertical electrode crosses the at least one horizontal electrode. The at least one data storage layer is located in regions in which the at least one vertical electrode crosses the at least one horizontal electrode, and stores data by varying its electrical resistance. The at least one reaction prevention layer is located in the regions in which the at least one vertical electrode crosses the at least one horizontal electrode.
摘要翻译：提供了包括至少一个水平电极，至少一个垂直电极，至少一个数据存储层和至少一个反应防止层的非易失性存储器件。至少一个垂直电极与至少一个水平电极交叉。所述至少一个数据存储层位于所述至少一个垂直电极与所述至少一个水平电极交叉的区域中，并且通过改变其电阻来存储数据。所述至少一个反应防止层位于所述至少一个垂直电极与所述至少一个水平电极交叉的区域中。

8. 发明申请

US20100117054A1 NON-VOLATILE MEMORY DEVICE WITH DATA STORAGE LAYER 有权
标题翻译：具有数据存储层的非易失性存储器件
公开(公告)号：US20100117054A1
公开(公告)日：2010-05-13
申请号：US12557580
申请日：2009-09-11
申请人： Deok-kee Kim , June-mo Koo , Ju-chul Park , Kyoung-won Na , Dong-seok Suh , Bum-seok Seo , Yoon-dong Park
发明人： Deok-kee Kim , June-mo Koo , Ju-chul Park , Kyoung-won Na , Dong-seok Suh , Bum-seok Seo , Yoon-dong Park
IPC分类号： H01L47/00
CPC分类号： G11C13/0004 , G11C13/0007 , G11C2213/32 , G11C2213/34 , G11C2213/71 , H01L27/101 , H01L27/249 , H01L45/04 , H01L45/12 , H01L45/1226 , H01L45/146 , H01L45/1666
摘要： Provided is a non-volatile memory device including at least one horizontal electrode, at least one vertical electrode, at least one data storage layer and at least one reaction prevention layer. The least one vertical electrode crosses the at least one horizontal electrode. The at least one data storage layer is located in regions in which the at least one vertical electrode crosses the at least one horizontal electrode, and stores data by varying its electrical resistance. The at least one reaction prevention layer is located in the regions in which the at least one vertical electrode crosses the at least one horizontal electrode.
摘要翻译：提供了包括至少一个水平电极，至少一个垂直电极，至少一个数据存储层和至少一个反应防止层的非易失性存储器件。至少一个垂直电极与至少一个水平电极交叉。所述至少一个数据存储层位于所述至少一个垂直电极与所述至少一个水平电极交叉的区域中，并且通过改变其电阻来存储数据。所述至少一个反应防止层位于所述至少一个垂直电极与所述至少一个水平电极交叉的区域中。

9. 发明申请

US20080278852A1 PERPENDICULAR MAGNETIC RECORDING HEAD AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：全能磁记录头及其制造方法
公开(公告)号：US20080278852A1
公开(公告)日：2008-11-13
申请号：US12028025
申请日：2008-02-08
申请人： Yong-su KIM , Kook-hyun Sunwoo , Kyoung-won Na
发明人： Yong-su KIM , Kook-hyun Sunwoo , Kyoung-won Na
IPC分类号： G11B5/33
CPC分类号： G11B5/1278 , G11B5/3116
摘要： A perpendicular magnetic recording head and a method of manufacturing said perpendicular magnetic recording head are provided. The perpendicular magnetic recording head has a main pole, a coil, which applies a magnetic field to the main pole, and a return pole constituting a magnetic circuit together with the main pole. The main pole has a back pole around which the coil is wound and a front pole contacting the back pole. The back pole and the front pole are formed on the same plane.
摘要翻译：提供垂直磁记录头和制造所述垂直磁记录头的方法。垂直磁记录头具有向主极施加磁场的主极，线圈和与主极一起构成磁路的返回极。主极具有一个后极，线圈缠绕在该杆上，前极接触后极。后极和前极形成在同一平面上。

10. 发明授权

US07389576B2 Method of manufacturing micro flux gate sensor 有权
标题翻译：微通量门传感器的制造方法
公开(公告)号：US07389576B2
公开(公告)日：2008-06-24
申请号：US11403904
申请日：2006-04-14
申请人： Kyoung-won Na , Jingli Yuan
发明人： Kyoung-won Na , Jingli Yuan
IPC分类号： G01R3/00
CPC分类号： G01R33/05 , Y10T29/49002 , Y10T29/49004 , Y10T29/49007 , Y10T29/4902 , Y10T29/4906 , Y10T29/49071 , Y10T29/49073
摘要： A method of manufacturing a micro flux gate sensor that has a good electrical connection and can be easily manufactured includes operations of forming a metal pattern, forming a first insulation layer to cover the metal pattern and forming viaholes to expose a certain portion of the metal pattern, applying an electrical signal through the metal pattern and plating the viaholes with a metal material to form a connection portion, forming a magnetic core on an upper portion of the first insulation layer, forming a second insulation layer to cover the magnetic core and forming an upper coil portion electrically connected to the connection portion to form the excitation coil and the magnetic field detecting coil, forming a third insulation layer to cover the upper coil portion, and removing a certain portion of the metal pattern to leave only the lower coil portion of the metal pattern.
摘要翻译：制造具有良好的电连接并且可以容易地制造的微通量门传感器的方法包括形成金属图案的操作，形成第一绝缘层以覆盖金属图案并形成通孔以露出金属图案的某一部分通过所述金属图案施加电信号并用金属材料电镀所述通孔以形成连接部分，在所述第一绝缘层的上部形成磁芯，形成第二绝缘层以覆盖所述磁芯并形成上部线圈部分电连接到连接部分以形成激励线圈和磁场检测线圈，形成第三绝缘层以覆盖上部线圈部分，以及去除金属图案的某一部分以仅留下下部线圈部分金属图案。

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