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1. 发明授权

US09108539B2 Safety apparatus of seat for vehicle with height adjust device 有权
标题翻译：具有高度调节装置的车辆座椅安全装置
公开(公告)号：US09108539B2
公开(公告)日：2015-08-18
申请号：US13551990
申请日：2012-07-18
申请人： Sang Do Park , Hak Gyun Kim , Tae Hoon Lee , Chang Oan Woo , Ki Nam Kim , Eom Seok Yoo , Yong Hee Shin , Tae Kon Park , Yong Sun Oh
发明人： Sang Do Park , Hak Gyun Kim , Tae Hoon Lee , Chang Oan Woo , Ki Nam Kim , Eom Seok Yoo , Yong Hee Shin , Tae Kon Park , Yong Sun Oh
IPC分类号： B60N2/427 , B60N2/42 , B60N2/16
CPC分类号： B60N2/1615 , B60N2/4221 , B60N2/4228 , B60N2/43
摘要： A safety apparatus of a seat for a vehicle with a height adjustment device may include a height link that has one end rotatably connected to a seat rail bracket and the other end fixed to a rear hinge pipe, a restriction link that may be disposed at a side of the height link and has one end pivotally coupled to the seat rail bracket, wherein the restriction link may be elastically biased away from the height link, a first anti-rotation mechanism that may be disposed at the height link and the restriction link to restrict rotation of the height link when a front of the height link rotates upward in a front collision, and a second anti-rotation mechanism that may be disposed at the height link and the restriction link to restrict rotation of the height link when a rear of the height link rotates upward in a rear collision.
摘要翻译：具有高度调节装置的车辆座椅的安全装置可以包括高度连杆，其一端可旋转地连接到座椅导轨支架，另一端固定到后铰链管，限制连杆可以设置在并且具有枢转地联接到座椅导轨支架的一端，其中所述限制链节可以被弹性地偏压远离所述高度连杆，所述第一防旋转机构可以设置在所述高度连杆处，并且所述限制连杆到当高度连杆的前部在前部碰撞中向上旋转时，限制高度连杆的旋转;以及第二防旋转机构，其可以设置在高度连杆和限制连杆上，以限制高度连杆的后部高度连杆在后碰撞中向上旋转。

2. 发明授权

US08334556B2 DRAM semiconductor device with pad electrode 失效
标题翻译：具有焊盘电极的DRAM半导体器件
公开(公告)号：US08334556B2
公开(公告)日：2012-12-18
申请号：US12556648
申请日：2009-09-10
申请人： Joo-Young Lee , Ki-Nam Kim
发明人： Joo-Young Lee , Ki-Nam Kim
IPC分类号： H01L29/78 , H01L29/94
CPC分类号： H01L27/10876 , H01L21/76895 , H01L21/823418 , H01L21/823437 , H01L21/823475 , H01L21/823481 , H01L23/485 , H01L27/10855 , H01L29/4236 , H01L29/66628 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a semiconductor substrate having an active region and an isolation region. A gate structure is provided on the semiconductor device. First and second impurity regions are provided in the substrate on both sides of the gate structure. A pad electrode is provided to contact the first impurity region. Because the pad electrode is provided on the first impurity region of the semiconductor device, the contact plug does not directly contact the active region. Accordingly, failures caused by damage to the active region may be prevented.
摘要翻译：半导体器件包括具有有源区和隔离区的半导体衬底。在半导体器件上设置栅极结构。第一和第二杂质区设置在栅极结构两侧的衬底中。提供焊盘电极以接触第一杂质区域。由于焊盘电极设置在半导体器件的第一杂质区上，所以接触插塞不直接接触有源区。因此，可以防止由有源区域的损坏引起的故障。

3. 发明申请

US20120039122A1 MULTI-BIT FLASH MEMORY DEVICE AND MEMORY CELL ARRAY 有权
标题翻译：多位闪存存储器件和存储器单元阵列
公开(公告)号：US20120039122A1
公开(公告)日：2012-02-16
申请号：US13279451
申请日：2011-10-24
申请人： Ki-Tae PARK , Ki-Nam KIM , Yeong-Taek LEE
发明人： Ki-Tae PARK , Ki-Nam KIM , Yeong-Taek LEE
IPC分类号： G11C16/04
CPC分类号： G11C16/0408 , G11C11/5621 , G11C16/0483 , G11C16/10 , G11C2211/5641 , G11C2211/5642
摘要： A flash memory device includes a plurality of memory blocks. A selected memory block among the plurality of memory blocks includes 2n pages of data. The selected memory block includes different types of memory cells capable of storing different numbers of bits.
摘要翻译：闪存器件包括多个存储器块。多个存储块中选择的存储块包括2n页的数据。所选存储块包括能够存储不同位数的不同类型的存储单元。

4. 发明申请

US20110300683A1 Semiconductor device and method of forming the same 有权
公开(公告)号：US20110300683A1
公开(公告)日：2011-12-08
申请号：US13137420
申请日：2011-08-15
申请人： Jun-Beom Park , Soon-Moon Jung , Ki-Nam Kim
发明人： Jun-Beom Park , Soon-Moon Jung , Ki-Nam Kim
IPC分类号： H01L45/00
CPC分类号： H01L27/24 , Y10S977/774
摘要： A semiconductor device and a method of forming the same are provided. The method includes preparing a semiconductor substrate. Insulating layers may be sequentially formed on the semiconductor substrate. Active elements may be formed between the insulating layers. A common node may be formed in the insulating layers to be electrically connected to the active elements. The common node and the active elements may be 2-dimensionally and repeatedly arranged on the semiconductor substrate.

5. 发明申请

US20110254451A1 APPARATUS AND METHOD FOR PREVENTING LAMP DAMAGE IN RAPID HEAT TREATMENT EQUIPMENT 审中-公开
标题翻译：用于防止快速热处理设备中的灯泡损伤的装置和方法
公开(公告)号：US20110254451A1
公开(公告)日：2011-10-20
申请号：US13132394
申请日：2009-11-27
申请人： Sang Hyun Ji , Dae Gyou Jin , Ki Nam Kim
发明人： Sang Hyun Ji , Dae Gyou Jin , Ki Nam Kim
IPC分类号： H05B37/03
CPC分类号： H05B39/02 , H05B37/03
摘要： Disclosed are an apparatus and method for preventing damage to the lamp of rapid heat treatment equipment. The most significant feature of the present invention is to provide an apparatus and method for preventing damage to a lamp in rapid heat treatment equipment, wherein the temperature of a quartz case comprising the lamp is sensed to identify an erratic increase in the temperature thereof so that problems with the lamp may be discovered early to take action. The apparatus and method according to the present invention allows the possibility of preventing damage or contamination of surrounding components due to lamp explosion; decisions regarding lamp replacement are also facilitated so that productivity can be enhanced. In addition, uniform lamp output may be ensured so that product quality is enhanced.
摘要翻译：公开了一种用于防止快速热处理设备的灯损坏的装置和方法。本发明最重要的特征在于提供一种用于防止在快速热处理设备中损坏灯的装置和方法，其中感测包括灯的石英壳的温度以识别其温度的不稳定增加，使得灯的问题可能会提早发现采取行动。根据本发明的装置和方法允许防止由于灯爆炸引起的周围部件的损坏或污染的可能性; 关于灯更换的决定也得到了促进，从而可以提高生产效率。此外，可以确保均匀的灯输出，从而提高产品质量。

6. 发明授权

US07988234B2 Headrest for vehicle 有权
标题翻译：汽车头枕
公开(公告)号：US07988234B2
公开(公告)日：2011-08-02
申请号：US12331899
申请日：2008-12-10
申请人： Ki Nam Kim , Hyun Ko , Hae Il Jeong
发明人： Ki Nam Kim , Hyun Ko , Hae Il Jeong
IPC分类号： A47C7/36
CPC分类号： B60N2/844 , B60N2/856
摘要： The present invention discloses a headrest for a vehicle which is constructed in such a way that a headrest body 100 of the headrest 1 can be folded by releasing the locking state with a fixed member 70 fixed on the horizontal frame portion 12 of the mounting frame 10 using a catch 60 that is rotated in an interlocking state with rotation of a lever 50.
摘要翻译：本发明公开了一种用于车辆的头枕，其构造成使得头枕1的头枕主体100可以通过固定在安装框架10的水平框架部分12上的固定构件70释放锁定状态而折叠使用在杠杆50的旋转中以互锁状态旋转的卡子60。

7. 发明授权

US07910433B2 Methods of fabricating multi-layer nonvolatile memory devices 有权
标题翻译：制造多层非易失性存储器件的方法
公开(公告)号：US07910433B2
公开(公告)日：2011-03-22
申请号：US12478538
申请日：2009-06-04
申请人： Young-Chul Jang , Ki-Nam Kim , Soon-Moon Jung , Jae-Hoon Jang
发明人： Young-Chul Jang , Ki-Nam Kim , Soon-Moon Jung , Jae-Hoon Jang
IPC分类号： H01L21/336 , H01L21/8234 , H01L21/84
CPC分类号： H01L27/105 , H01L21/8221 , H01L27/0688 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L27/11526 , H01L27/11529 , H01L27/11551
摘要： A nonvolatile memory device includes a semiconductor substrate having a first well region of a first conductivity type, and at least one semiconductor layer formed on the semiconductor substrate. A first cell array is formed on the semiconductor substrate, and a second cell array formed on the semiconductor layer. The semiconductor layer includes a second well region of the first conductivity type having a doping concentration greater than a doping concentration of the first well region of the first conductivity type. As the doping concentration of the second well region is increased, a resistance difference may be reduced between the first and second well regions.
摘要翻译：非易失性存储器件包括具有第一导电类型的第一阱区和形成在半导体衬底上的至少一个半导体层的半导体衬底。第一单元阵列形成在半导体衬底上，第二单元阵列形成在半导体层上。半导体层包括第一导电类型的第二阱区，其具有大于第一导电类型的第一阱区的掺杂浓度的掺杂浓度。随着第二阱区域的掺杂浓度增加，可以在第一和第二阱区域之间减小电阻差。

8. 发明授权

US07692970B2 Flash memory devices that utilize age-based verify voltages to increase data reliability and methods of operating same 有权
标题翻译：使用基于年龄的验证电压来提高数据可靠性的闪存器件和操作方法
公开(公告)号：US07692970B2
公开(公告)日：2010-04-06
申请号：US11943887
申请日：2007-11-21
申请人： Ki-Tae Park , Yong-Seok Kim , Ki-Nam Kim , Yeong-Taek Lee
发明人： Ki-Tae Park , Yong-Seok Kim , Ki-Nam Kim , Yeong-Taek Lee
IPC分类号： G11C11/34
CPC分类号： G11C16/344 , G11C16/3454
摘要： Disclosed is a method of verifying a programmed condition of a flash memory device, being comprised of: determining a level of an additional verifying voltage in response to the number of programming/erasing cycles of memory cells; conducting a verifying operation to programmed memory cells with an initial verifying voltage lower than the additional verifying voltage; and selectively conducting an additional verifying operation with the additional verifying voltage to the program-verified memory cells in response to the number of programming/erasing cycles.
摘要翻译：公开了一种验证闪速存储器件的编程状态的方法，其包括：响应于存储器单元的编程/擦除循环的数量确定额外的验证电压的电平; 对初始验证电压低于附加验证电压的程序存储单元执行验证操作; 以及响应于所述编程/擦除周期的数量，选择性地对所述经过程序验证的存储器单元执行附加验证电压的附加验证操作。

9. 发明授权

US07675783B2 Nonvolatile memory device and driving method thereof 有权
标题翻译：非易失性存储器件及其驱动方法
公开(公告)号：US07675783B2
公开(公告)日：2010-03-09
申请号：US12035732
申请日：2008-02-22
申请人： Ki-Tae Park , Ki-Nam Kim , Yeong-Taek Lee
发明人： Ki-Tae Park , Ki-Nam Kim , Yeong-Taek Lee
IPC分类号： G11C16/04
CPC分类号： G11C11/5621 , G11C16/10 , G11C16/30 , G11C16/3454
摘要： Provided are a nonvolatile memory device and a driving method thereof. In the method of driving a nonvolatile memory device, a structural shape and position of a memory cell to be driven is determined, and then the memory cell is driven with an optimized operating condition according to a distribution of the memory cell using a determination result.
摘要翻译：提供一种非易失性存储装置及其驱动方法。在驱动非易失性存储器件的方法中，确定要驱动的存储单元的结构形状和位置，然后使用确定结果根据存储单元的分布以优化的操作条件驱动存储单元。

10. 发明授权

US07551480B2 Multi-bit flash memory device and memory cell array 有权
标题翻译：多位闪存设备和存储单元阵列
公开(公告)号：US07551480B2
公开(公告)日：2009-06-23
申请号：US11637791
申请日：2006-12-13
申请人： Ki-Tae Park , Ki-Nam Kim , Yeong-Taek Lee
发明人： Ki-Tae Park , Ki-Nam Kim , Yeong-Taek Lee
IPC分类号： G11C11/34
CPC分类号： G11C16/0408 , G11C11/5621 , G11C16/0483 , G11C16/10 , G11C2211/5641 , G11C2211/5642
摘要： A flash memory device comprises a plurality of memory blocks. A selected memory block among the plurality of memory blocks includes 2n pages of data. The selected memory block includes different types of memory cells capable of storing different numbers of bits.
摘要翻译：闪存器件包括多个存储器块。多个存储块中选择的存储块包括2n页的数据。所选存储块包括能够存储不同位数的不同类型的存储单元。

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