专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110237055A1 Methods of Manufacturing Stacked Semiconductor Devices 审中-公开
标题翻译：堆叠半导体器件制造方法
公开(公告)号：US20110237055A1
公开(公告)日：2011-09-29
申请号：US13053291
申请日：2011-03-22
申请人： Yong-hoon Son , Si-Young Choi , Myoung-Bum Lee , Ki-Hyun Hwang , Seung-Jae Baik , Jeong Hee Han
发明人： Yong-hoon Son , Si-Young Choi , Myoung-Bum Lee , Ki-Hyun Hwang , Seung-Jae Baik , Jeong Hee Han
IPC分类号： H01L21/20
CPC分类号： H01L27/11578 , H01L27/0688 , H01L27/11524 , H01L27/11551 , H01L27/1207
摘要： A stacked semiconductor device that is reliable by forming an insulating layer on a lower memory layer and by forming a single crystalline semiconductor in portions of the insulating layer. A method of manufacturing the stacked semiconductor device, including: providing a lower memory layer including a plurality of lower memory structures; forming an insulating layer on the lower memory layer; forming trenches by removing portions of the insulating layer; forming a preparatory semiconductor layer for filling the trenches; and forming a single crystalline semiconductor layer by phase-changing the preparatory semiconductor layer.
摘要翻译：通过在下部存储层上形成绝缘层，在绝缘层的一部分形成单晶半导体，可靠的叠层型半导体装置。一种制造叠层半导体器件的方法，包括：提供包括多个下部存储结构的下部存储层; 在下部存储层上形成绝缘层; 通过去除绝缘层的部分形成沟槽; 形成用于填充沟槽的准备半导体层; 以及通过相变所述预备半导体层来形成单晶半导体层。

2. 发明申请

US20080070368A1 Method of manufacturing a non-volatile memory device 有权
标题翻译：制造非易失性存储器件的方法
公开(公告)号：US20080070368A1
公开(公告)日：2008-03-20
申请号：US11902209
申请日：2007-09-20
申请人： Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Han-Mei Choi , Seung-Hwan Lee , Seung-Jae Baik , Sun-Jung Kim , Kwang-Min Park , In-Sun Yl
发明人： Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Han-Mei Choi , Seung-Hwan Lee , Seung-Jae Baik , Sun-Jung Kim , Kwang-Min Park , In-Sun Yl
IPC分类号： H01L21/336 , H01L21/3205
CPC分类号： H01L29/792 , H01L21/28185 , H01L21/28194 , H01L21/28282 , H01L21/3185 , H01L29/4234 , H01L29/518 , H01L29/7923
摘要： In a method of manufacturing a non-volatile memory device, a tunnel insulating layer may be formed on a channel region of a substrate. A charge trapping layer including silicon nitride may be formed on the tunnel insulating layer to trap electrons from the channel region. A heat treatment may be performed using a first gas including nitrogen and a second gas including oxygen to remove defect sites in the charge trapping layer and to densify the charge trapping layer. A blocking layer may be formed on the heat-treated charge trapping layer, and a conductive layer may then formed on the blocking layer. The blocking layer, the conductive layer, the heat-treated charge trapping layer and the tunnel insulating layer may be patterned to form a gate structure on the channel region. Accordingly, data retention performance and/or reliability of a non-volatile memory device including the gate structure may be improved.
摘要翻译：在制造非易失性存储器件的方法中，隧道绝缘层可以形成在衬底的沟道区上。可以在隧道绝缘层上形成包括氮化硅的电荷俘获层，以从沟道区捕获电子。可以使用包括氮气的第一气体和包括氧的第二气体来进行热处理，以去除电荷捕获层中的缺陷位点并致密化电荷捕获层。可以在热处理的电荷俘获层上形成阻挡层，然后可以在阻挡层上形成导电层。阻挡层，导电层，热处理电荷捕获层和隧道绝缘层可以被图案化以在沟道区上形成栅极结构。因此，可以提高包括门结构的非易失性存储器件的数据保持性能和/或可靠性。

3. 发明授权

US08114735B2 Method of manufacturing a non-volatile memory device 有权
标题翻译：制造非易失性存储器件的方法
公开(公告)号：US08114735B2
公开(公告)日：2012-02-14
申请号：US11902209
申请日：2007-09-20
申请人： Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Han-Mei Choi , Seung-Hwan Lee , Seung-Jae Baik , Sun-Jung Kim , Kwang-Min Park , In-Sun Yi
发明人： Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Han-Mei Choi , Seung-Hwan Lee , Seung-Jae Baik , Sun-Jung Kim , Kwang-Min Park , In-Sun Yi
IPC分类号： H01L21/336
CPC分类号： H01L29/792 , H01L21/28185 , H01L21/28194 , H01L21/28282 , H01L21/3185 , H01L29/4234 , H01L29/518 , H01L29/7923
摘要： In a method of manufacturing a non-volatile memory device, a tunnel insulating layer may be formed on a channel region of a substrate. A charge trapping layer including silicon nitride may be formed on the tunnel insulating layer to trap electrons from the channel region. A heat treatment may be performed using a first gas including nitrogen and a second gas including oxygen to remove defect sites in the charge trapping layer and to densify the charge trapping layer. A blocking layer may be formed on the heat-treated charge trapping layer, and a conductive layer may then formed on the blocking layer. The blocking layer, the conductive layer, the heat-treated charge trapping layer and the tunnel insulating layer may be patterned to form a gate structure on the channel region. Accordingly, data retention performance and/or reliability of a non-volatile memory device including the gate structure may be improved.
摘要翻译：在制造非易失性存储器件的方法中，隧道绝缘层可以形成在衬底的沟道区上。可以在隧道绝缘层上形成包括氮化硅的电荷俘获层，以从沟道区捕获电子。可以使用包括氮气的第一气体和包括氧的第二气体来进行热处理，以去除电荷捕获层中的缺陷位点并致密化电荷捕获层。可以在热处理的电荷俘获层上形成阻挡层，然后可以在阻挡层上形成导电层。阻挡层，导电层，热处理电荷捕获层和隧道绝缘层可以被图案化以在沟道区上形成栅极结构。因此，可以提高包括门结构的非易失性存储器件的数据保持性能和/或可靠性。

4. 发明授权

US08460999B2 Non-volatile memory devices with multiple layers having band gap relationships among the layers 有权
标题翻译：具有层之间具有带隙关系的多层的非易失性存储器件
公开(公告)号：US08460999B2
公开(公告)日：2013-06-11
申请号：US13067405
申请日：2011-05-31
申请人： Seung-Jae Baik , Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Sang-Jin Hyun
发明人： Seung-Jae Baik , Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Sang-Jin Hyun
IPC分类号： H01L21/336
CPC分类号： H01L29/792 , H01L21/28282 , H01L29/42348 , H01L29/513 , H01L29/66833
摘要： A nonvolatile memory device may include: a tunnel insulating layer on a semiconductor substrate; a charge storage layer on the tunnel insulating layer; a blocking insulating layer on the charge storage layer; and a control gate electrode on the blocking insulating layer. The tunnel insulating layer may include a first tunnel insulating layer and a second tunnel insulating layer. The first tunnel insulating layer and the second tunnel insulating layer may be sequentially stacked on the semiconductor substrate. The second tunnel insulating layer may have a larger band gap than the first tunnel insulating layer. A method for fabricating a nonvolatile memory device may include: forming a tunnel insulating layer on a semiconductor substrate; forming a charge storage layer on the tunnel insulating layer; forming a blocking insulating layer on the charge storage layer; and forming a control gate electrode on the blocking insulating layer.
摘要翻译：非易失性存储器件可以包括：半导体衬底上的隧道绝缘层; 隧道绝缘层上的电荷存储层; 电荷存储层上的阻挡绝缘层; 以及在所述阻挡绝缘层上的控制栅电极。隧道绝缘层可以包括第一隧道绝缘层和第二隧道绝缘层。第一隧道绝缘层和第二隧道绝缘层可以顺序堆叠在半导体衬底上。第二隧道绝缘层可以具有比第一隧道绝缘层更大的带隙。非易失性存储器件的制造方法可以包括：在半导体衬底上形成隧道绝缘层; 在隧道绝缘层上形成电荷存储层; 在电荷存储层上形成阻挡绝缘层; 以及在所述阻挡绝缘层上形成控制栅电极。

5. 发明授权

US07973355B2 Nonvolatile memory devices with multiple layers having band gap relationships among the layers 有权
标题翻译：具有层之间具有带隙关系的多层的非易失性存储器件
公开(公告)号：US07973355B2
公开(公告)日：2011-07-05
申请号：US12216945
申请日：2008-07-14
申请人： Seung-Jae Baik , Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Sang-Jin Hyun
发明人： Seung-Jae Baik , Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Sang-Jin Hyun
IPC分类号： H01L29/792
CPC分类号： H01L29/792 , H01L21/28282 , H01L29/42348 , H01L29/513 , H01L29/66833
摘要： A nonvolatile memory device may include: a tunnel insulating layer on a semiconductor substrate; a charge storage layer on the tunnel insulating layer; a blocking insulating layer on the charge storage layer; and a control gate electrode on the blocking insulating layer. The tunnel insulating layer may include a first tunnel insulating layer and a second tunnel insulating layer. The first tunnel insulating layer and the second tunnel insulating layer may be sequentially stacked on the semiconductor substrate. The second tunnel insulating layer may have a larger band gap than the first tunnel insulating layer. A method for fabricating a nonvolatile memory device may include: forming a tunnel insulating layer on a semiconductor substrate; forming a charge storage layer on the tunnel insulating layer; forming a blocking insulating layer on the charge storage layer; and forming a control gate electrode on the blocking insulating layer.
摘要翻译：非易失性存储器件可以包括：半导体衬底上的隧道绝缘层; 隧道绝缘层上的电荷存储层; 电荷存储层上的阻挡绝缘层; 以及在所述阻挡绝缘层上的控制栅电极。隧道绝缘层可以包括第一隧道绝缘层和第二隧道绝缘层。第一隧道绝缘层和第二隧道绝缘层可以顺序堆叠在半导体衬底上。第二隧道绝缘层可以具有比第一隧道绝缘层更大的带隙。非易失性存储器件的制造方法可以包括：在半导体衬底上形成隧道绝缘层; 在隧道绝缘层上形成电荷存储层; 在电荷存储层上形成阻挡绝缘层; 以及在所述阻挡绝缘层上形成控制栅电极。

6. 发明申请

US20090014781A1 Nonvolatile memory devices and methods for fabricating nonvolatile memory devices 有权
标题翻译：用于制造非易失性存储器件的非易失存储器件和方法
公开(公告)号：US20090014781A1
公开(公告)日：2009-01-15
申请号：US12216945
申请日：2008-07-14
申请人： Seung-Jae Baik , Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Sang-Jin Hyun
发明人： Seung-Jae Baik , Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Sang-Jin Hyun
IPC分类号： H01L29/792 , H01L21/28
CPC分类号： H01L29/792 , H01L21/28282 , H01L29/42348 , H01L29/513 , H01L29/66833
摘要： A nonvolatile memory device may include: a tunnel insulating layer on a semiconductor substrate; a charge storage layer on the tunnel insulating layer; a blocking insulating layer on the charge storage layer; and a control gate electrode on the blocking insulating layer. The tunnel insulating layer may include a first tunnel insulating layer and a second tunnel insulating layer. The first tunnel insulating layer and the second tunnel insulating layer may be sequentially stacked on the semiconductor substrate. The second tunnel insulating layer may have a larger band gap than the first tunnel insulating layer. A method for fabricating a nonvolatile memory device may include: forming a tunnel insulating layer on a semiconductor substrate; forming a charge storage layer on the tunnel insulating layer; forming a blocking insulating layer on the charge storage layer; and forming a control gate electrode on the blocking insulating layer.
摘要翻译：非易失性存储器件可以包括：半导体衬底上的隧道绝缘层; 隧道绝缘层上的电荷存储层; 电荷存储层上的阻挡绝缘层; 以及在所述阻挡绝缘层上的控制栅电极。隧道绝缘层可以包括第一隧道绝缘层和第二隧道绝缘层。第一隧道绝缘层和第二隧道绝缘层可以顺序地堆叠在半导体衬底上。第二隧道绝缘层可以具有比第一隧道绝缘层更大的带隙。非易失性存储器件的制造方法可以包括：在半导体衬底上形成隧道绝缘层; 在隧道绝缘层上形成电荷存储层; 在电荷存储层上形成阻挡绝缘层; 以及在所述阻挡绝缘层上形成控制栅电极。

7. 发明申请

US20090134451A1 Semiconductor device and method of fabricating the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20090134451A1
公开(公告)日：2009-05-28
申请号：US12292543
申请日：2008-11-20
申请人： Seung-Jae Baik , Jin-Tae Noh , Hong-Suk Kim , In-Sun Yi , Si-Young Choi , Ki-Hyun Hwang
发明人： Seung-Jae Baik , Jin-Tae Noh , Hong-Suk Kim , In-Sun Yi , Si-Young Choi , Ki-Hyun Hwang
IPC分类号： H01L29/792
CPC分类号： H01L29/7881 , B82Y10/00 , G11C2216/06 , H01L27/115 , H01L27/11521 , H01L27/11565 , H01L27/11568 , H01L29/42332 , H01L29/42348 , H01L29/792
摘要： An example embodiment of a non-volatile memory device and an example embodiment of a method of fabricating the same are provided. The non-volatile memory devices includes a tunnel insulation layer on a semiconductor substrate, a charge storage layer on the tunnel insulation layer, a blocking insulation layer including at least one nano dot on the charge storage layer, and a control gate electrode on the blocking insulation layer.
摘要翻译：提供非易失性存储器件的示例性实施例及其制造方法的示例性实施例。非易失性存储器件包括在半导体衬底上的隧道绝缘层，隧道绝缘层上的电荷存储层，在电荷存储层上包括至少一个纳米点的阻挡绝缘层，以及阻挡层上的控制栅电极绝缘层。

8. 发明申请

US20090045448A1 Non-volatile memory device and methods of forming the same 有权
标题翻译：非易失性存储器件及其形成方法
公开(公告)号：US20090045448A1
公开(公告)日：2009-02-19
申请号：US12222568
申请日：2008-08-12
申请人： Seung-Jae Baik , Si-Young Choi , Ki-Hyun Hwang
发明人： Seung-Jae Baik , Si-Young Choi , Ki-Hyun Hwang
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7923 , H01L21/28282 , H01L27/115 , H01L27/11568 , H01L29/42348 , H01L29/42352
摘要： Example embodiments provide a non-volatile memory device and methods of forming the same. The non-volatile memory device may define an active region in a semiconductor substrate, and may include a device isolation layer extending in a first direction, bit lines in the semiconductor substrate, the bit lines extending in a second direction which intersects the first direction; word lines extending in the first direction and covering the active region; and charge storage patterns between the word lines and active region, wherein the charge storage patterns may be in pairs on both edges of the bit lines, and a pair of charge storage patterns may be spaced apart from each other by the word lines.
摘要翻译：示例性实施例提供非易失性存储器件及其形成方法。非易失性存储器件可以在半导体衬底中限定有源区，并且可以包括沿第一方向延伸的器件隔离层，半导体衬底中的位线，沿与第一方向相交的第二方向延伸的位线; 字线在第一方向上延伸并覆盖有源区; 并且对字线和有源区域之间的存储模式进行充电，其中电荷存储模式可以在位线的两个边缘上成对配对，并且一对电荷存储模式可以通过字线彼此间隔开。

9. 发明申请

US20110237059A1 Non-volatile memory devices with multiple layers having band gap relationships among the layers 有权
标题翻译：具有层之间具有带隙关系的多层的非易失性存储器件
公开(公告)号：US20110237059A1
公开(公告)日：2011-09-29
申请号：US13067405
申请日：2011-05-31
申请人： Seung-Jae Baik , Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Sang-Jin Hyun
发明人： Seung-Jae Baik , Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Sang-Jin Hyun
IPC分类号： H01L21/28
CPC分类号： H01L29/792 , H01L21/28282 , H01L29/42348 , H01L29/513 , H01L29/66833
摘要： A nonvolatile memory device may include: a tunnel insulating layer on a semiconductor substrate; a charge storage layer on the tunnel insulating layer; a blocking insulating layer on the charge storage layer; and a control gate electrode on the blocking insulating layer. The tunnel insulating layer may include a first tunnel insulating layer and a second tunnel insulating layer. The first tunnel insulating layer and the second tunnel insulating layer may be sequentially stacked on the semiconductor substrate. The second tunnel insulating layer may have a larger band gap than the first tunnel insulating layer. A method for fabricating a nonvolatile memory device may include: forming a tunnel insulating layer on a semiconductor substrate; forming a charge storage layer on the tunnel insulating layer; forming a blocking insulating layer on the charge storage layer; and forming a control gate electrode on the blocking insulating layer.
摘要翻译：非易失性存储器件可以包括：半导体衬底上的隧道绝缘层; 隧道绝缘层上的电荷存储层; 电荷存储层上的阻挡绝缘层; 以及在所述阻挡绝缘层上的控制栅电极。隧道绝缘层可以包括第一隧道绝缘层和第二隧道绝缘层。第一隧道绝缘层和第二隧道绝缘层可以顺序堆叠在半导体衬底上。第二隧道绝缘层可以具有比第一隧道绝缘层更大的带隙。非易失性存储器件的制造方法可以包括：在半导体衬底上形成隧道绝缘层; 在隧道绝缘层上形成电荷存储层; 在电荷存储层上形成阻挡绝缘层; 以及在所述阻挡绝缘层上形成控制栅电极。

10. 发明授权

US07791130B2 Non-volatile memory device and methods of forming the same 有权
标题翻译：非易失性存储器件及其形成方法
公开(公告)号：US07791130B2
公开(公告)日：2010-09-07
申请号：US12222568
申请日：2008-08-12
申请人： Seung-Jae Baik , Si-Young Choi , Ki-Hyun Hwang
发明人： Seung-Jae Baik , Si-Young Choi , Ki-Hyun Hwang
IPC分类号： H01L29/792
CPC分类号： H01L29/7923 , H01L21/28282 , H01L27/115 , H01L27/11568 , H01L29/42348 , H01L29/42352
摘要： Example embodiments provide a non-volatile memory device and methods of forming the same. The non-volatile memory device may define an active region in a semiconductor substrate, and may include a device isolation layer extending in a first direction, bit lines in the semiconductor substrate, the bit lines extending in a second direction which intersects the first direction; word lines extending in the first direction and covering the active region; and charge storage patterns between the word lines and active region, wherein the charge storage patterns may be in pairs on both edges of the bit lines, and a pair of charge storage patterns may be spaced apart from each other by the word lines.
摘要翻译：示例性实施例提供非易失性存储器件及其形成方法。非易失性存储器件可以在半导体衬底中限定有源区，并且可以包括沿第一方向延伸的器件隔离层，半导体衬底中的位线，沿与第一方向相交的第二方向延伸的位线; 字线在第一方向上延伸并覆盖有源区; 并且对字线和有源区域之间的存储模式进行充电，其中电荷存储模式可以在位线的两个边缘上成对配对，并且一对电荷存储模式可以通过字线彼此间隔开。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式