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    • 6. 发明授权
    • Semiconductor device and method of manufacturing the same
    • 半导体装置及其制造方法
    • US07667274B2
    • 2010-02-23
    • US12071887
    • 2008-02-27
    • Kazuaki NakajimaKyoichi Suguro
    • Kazuaki NakajimaKyoichi Suguro
    • H01L29/45H01L29/78
    • H01L21/76843H01L21/28518H01L21/76855H01L21/823814H01L21/823871H01L27/092
    • A semiconductor device is disclosed, which comprises a silicon substrate, a complementary MISFET circuit, an insulation film formed on the silicon substrate, a first contact hole formed in the insulation film, a first metal silicide layer formed on the bottom of the first contact hole, the first metal silicide layer being provided by a reaction of the n-channel impurity diffused region of the n-channel MISFET with a first metal, a second contact hole formed in the insulation film, a second metal silicide layer formed on the bottom of the second contact hole, the second metal silicide layer being provided by a reaction of the p-channel impurity diffused region of the p-channel MISFET with a second metal, and a work function of the second metal silicide layer being higher than that of the first metal silicide layer.
    • 公开了一种半导体器件,其包括硅衬底,互补MISFET电路,形成在硅衬底上的绝缘膜,形成在绝缘膜中的第一接触孔,形成在第一接触孔的底部上的第一金属硅化物层 通过n沟道MISFET的n沟道杂质扩散区域与第一金属的反应提供第一金属硅化物层,形成在绝缘膜中的第二接触孔,形成在第二金属硅化物层的底部的第二金属硅化物层 所述第二接触孔,所述第二金属硅化物层由所述p沟道MISFET的p沟道杂质扩散区域与第二金属的反应提供,并且所述第二金属硅化物层的功函数高于所述第二金属硅化物层的功函数 第一金属硅化物层。
    • 8. 发明授权
    • Method of manufacturing CMOS with silicide contacts
    • 用硅化物触点制造CMOS的方法
    • US07354819B2
    • 2008-04-08
    • US10701435
    • 2003-11-06
    • Kazuaki NakajimaKyoichi Suguro
    • Kazuaki NakajimaKyoichi Suguro
    • H01L21/8238
    • H01L21/76843H01L21/28518H01L21/76855H01L21/823814H01L21/823871H01L27/092
    • A semiconductor device is disclosed, which comprises a silicon substrate, a complementary MISFET circuit, an insulation film formed on the silicon substrate, a first contact hole formed in the insulation film, a first metal silicide layer formed on the bottom of the first contact hole, the first metal silicide layer being provided by a reaction of the n-channel impurity diffused region of the n-channel MISFET with a first metal, a second contact hole formed in the insulation film, a second metal silicide layer formed on the bottom of the second contact hole, the second metal silicide layer being provided by a reaction of the p-channel impurity diffused region of the p-channel MISFET with a second metal, and a work function of the second metal silicide layer being higher than that of the first metal silicide layer.
    • 公开了一种半导体器件,其包括硅衬底,互补MISFET电路,形成在硅衬底上的绝缘膜,形成在绝缘膜中的第一接触孔,形成在第一接触孔的底部上的第一金属硅化物层 通过n沟道MISFET的n沟道杂质扩散区域与第一金属的反应提供第一金属硅化物层,形成在绝缘膜中的第二接触孔,形成在第二金属硅化物层的底部的第二金属硅化物层 所述第二接触孔,所述第二金属硅化物层由所述p沟道MISFET的p沟道杂质扩散区域与第二金属的反应提供,并且所述第二金属硅化物层的功函数高于所述第二金属硅化物层的功函数 第一金属硅化物层。
    • 10. 发明授权
    • Stencil mask with charge-up prevention and method of manufacturing the same
    • 具有防止充电的模板面罩及其制造方法
    • US07327013B2
    • 2008-02-05
    • US10743522
    • 2003-12-23
    • Takeshi ShibataKyoichi Suguro
    • Takeshi ShibataKyoichi Suguro
    • H01L29/06
    • G03F1/20G03F1/40
    • A drive unit is described for switching circuit breakers on and off, in particular disconnecting switches and/or grounding switches of medium-voltage switchgear. The drive unit includes a reversible d.c. motor and a switching device containing two separately drivable and interlocked reversing switches, one assigned to each direction of rotation of the d.c. motor, their contacts performing the current reversal on the windings of the d.c. motor as required to reverse the direction of rotation. The drive unit further includes power contactors whose contacts have the required switching capacity for load switching. The all-or-nothing relays and safety switches are implemented by uniform low-power relays representing the direction of rotation, each having at least two electrically isolated relay contacts connected in parallel and also having an equalizing capacitor connected in parallel to each. Such drive units are used in connection with switchgear for power transmission and distribution.
    • 在模板掩模中,导电薄膜在其中具有第一开口。 在除了第一开口之外的导电薄膜的区域中形成绝缘膜。 在绝缘膜上形成导电支撑。 第二个开口穿过导电支撑和绝缘膜并到达导电薄膜的表面。 导电构件形成在第二开口中。 导电构件电连接导电支撑件和导电薄膜。