专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090174291A1 PACKAGE FOR ELECTRONIC COMPONENT AND PIEZOELECTRIC RESONATOR 有权
标题翻译：电子元件和压电谐振器的封装
公开(公告)号：US20090174291A1
公开(公告)日：2009-07-09
申请号：US12348578
申请日：2009-01-05
申请人： Yoji NAGANO , Hideo TANAYA , Tatsuya ANZAI
发明人： Yoji NAGANO , Hideo TANAYA , Tatsuya ANZAI
IPC分类号： H01L41/053 , H01L41/047 , H05K5/00
CPC分类号： H03H9/1021
摘要： A package for electronic component includes: a rectangular package body, a lid hermetically sealing the package body, an electrode pad provided in the package body, a mounting terminal provided at least near four corners of a bottom surface of the package body and having a bump on a mounting surface, and a plurality of coupling electrodes electrically coupling the pad to the mounting terminal.
摘要翻译：一种用于电子部件的封装包括：矩形封装体，密封封装体的盖子，设置在封装主体中的电极焊盘，设置在封装主体的底面的至少四个角附近的安装端子，在安装表面上，以及多个耦合电极，其将该焊盘电耦合到安装端子。

2. 发明申请

US20080231145A1 QUARTZ CRYSTAL DEVICE AND METHOD FOR SEALING THE SAME 有权
标题翻译： QUARTZ晶体装置及其密封方法
公开(公告)号：US20080231145A1
公开(公告)日：2008-09-25
申请号：US12051463
申请日：2008-03-19
申请人： Yoji NAGANO , Tatsuya ANZAI , Hideo TANAYA
发明人： Yoji NAGANO , Tatsuya ANZAI , Hideo TANAYA
IPC分类号： H01L41/053 , H01L41/18 , B22F5/10
CPC分类号： H03H9/0595 , B22F1/0074 , B22F7/062 , H01L23/10 , H01L2924/0002 , H01L2924/01079 , H01L2924/09701 , H03H9/0547 , H03H9/1021 , H03H9/1035 , Y10T29/42 , Y10T29/49005 , Y10T29/49007 , Y10T29/4908 , Y10T156/1089 , H01L2924/00
摘要： A quartz crystal device includes a crystal resonator element and a package including a plurality of components. The plurality of components are bonded using a metal paste sealing material containing a metallic particle having an average particle size from 0.1 to 1.0 μm, an organic solvent, and a resin material in proportions of from 88 to 93 percent by weight from 5 to 15 percent by weight, and from 0.01 to 4.0 percent by weight, respectively, to hermetically seal the crystal resonator element in the package.
摘要翻译：石英晶体器件包括晶体谐振器元件和包括多个元件的封装。使用包含平均粒径为0.1〜1.0μm的金属粒子，有机溶剂和树脂材料的金属糊料密封材料，按照88〜93重量％的比例，将5〜15重量％，分别为0.01〜4.0重量％，以密封包装中的晶体振子元件。

3. 发明申请

US20120025673A1 QUARTZ CRYSTAL DEVICE AND METHOD FOR SEALING THE SAME 有权
标题翻译： QUARTZ晶体装置及其密封方法
公开(公告)号：US20120025673A1
公开(公告)日：2012-02-02
申请号：US13272952
申请日：2011-10-13
申请人： Yoji NAGANO , Tatsuya Anzai , Hideo Tanaya
发明人： Yoji NAGANO , Tatsuya Anzai , Hideo Tanaya
IPC分类号： H01L41/053 , B29C65/48
CPC分类号： H03H9/0595 , B22F1/0074 , B22F7/062 , H01L23/10 , H01L2924/0002 , H01L2924/01079 , H01L2924/09701 , H03H9/0547 , H03H9/1021 , H03H9/1035 , Y10T29/42 , Y10T29/49005 , Y10T29/49007 , Y10T29/4908 , Y10T156/1089 , H01L2924/00
摘要： A quartz crystal device includes a crystal resonator element and a package including a plurality of components. The plurality of components are bonded using a metal paste sealing material containing a metallic particle having an average particle size from 0.1 to 1.0 μm, an organic solvent, and a resin material in proportions of from 88 to 93 percent by weight, from 5 to 15 percent by weight, and from 0.01 to 4.0 percent by weight, respectively, to hermetically seal the crystal resonator element in the package.
摘要翻译：石英晶体器件包括晶体谐振器元件和包括多个元件的封装。使用含有平均粒径为0.1〜1.0μm的金属粒子，有机溶剂和树脂材料的金属膏状密封材料，按照88〜93重量％的比例粘合多个成分，5〜15 分别为0.01〜4.0重量％，以密封封装体内的晶体振子元件。

4. 发明申请

US20100173472A1 METHOD FOR MANUFACTURING SOI SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造SOI衬底的方法和制造半导体器件的方法
公开(公告)号：US20100173472A1
公开(公告)日：2010-07-08
申请号：US12648631
申请日：2009-12-29
申请人： Yoji NAGANO
发明人： Yoji NAGANO
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： A method for manufacturing an SOI substrate and a method for manufacturing a semiconductor device, in each of which peeling of a single crystal semiconductor layer from an end portion due to laser irradiation is suppressed, are provided. A fragile region is formed in a single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with an accelerated ion, the single crystal semiconductor substrate is bonded to a base substrate with an insulating layer interposed therebetween, a single crystal semiconductor layer is formed over the base substrate with the insulating layer interposed therebetween by splitting the single crystal semiconductor substrate at the fragile region, an end portion of the single crystal semiconductor layer is removed, and a surface of the single crystal semiconductor layer whose end portion has been removed is irradiated with a laser beam.
摘要翻译：提供了SOI基板的制造方法以及半导体装置的制造方法，其中抑制了由于激光照射而导致的单晶半导体层从端部的剥离。通过用加速离子照射单晶半导体衬底，在单晶半导体衬底中形成易碎区域，将单晶半导体衬底与绝缘层接合到基底衬底上，形成单晶半导体层通过在脆性区域分割单晶半导体衬底而将绝缘层插入其间的基底衬底，去除单晶半导体层的端部，并且将其端部已被去除的单晶半导体层的表面照射激光束。

5. 发明申请

US20110174533A1 ELECTRONIC APPARATUS, METHOD OF MANUFACTURING SUBSTRATE, AND METHOD OF MANUFACTURING ELECTRONIC APPARATUS 有权
标题翻译：电子装置，制造基板的方法和制造电子装置的方法
公开(公告)号：US20110174533A1
公开(公告)日：2011-07-21
申请号：US12984929
申请日：2011-01-05
申请人： Yoji NAGANO
发明人： Yoji NAGANO
IPC分类号： H05K5/00 , H05K3/30
CPC分类号： H05K3/341 , H03H9/1021 , H05K1/0306 , H05K1/111 , H05K3/0014 , H05K3/0052 , H05K9/0026 , H05K2201/09845 , H05K2201/10371 , H05K2203/0108 , Y02P70/613 , Y10T29/4913
摘要： An electronic apparatus includes: a substrate which has a step portion in an edge portion; an electronic component which is bonded to a surface of the substrate inward of the step portion of the substrate; and a cap member which is bonded to the step portion so as to seal the electronic component, wherein a wall surface of the step portion is formed to be inclined from the step portion toward an electronic component bonding region or to be perpendicular to the step portion.
摘要翻译：电子设备包括：在边缘部分具有台阶部分的基板; 电子部件，其在所述基板的台阶部的内侧粘合到所述基板的表面; 以及盖构件，其结合到所述台阶部以密封所述电子部件，其中所述台阶部的壁面形成为从所述台阶部向电子部件接合区域倾斜或者与所述台阶部分垂直。

6. 发明申请

US20110076837A1 MANUFACTURING METHOD OF SOI SUBSTRATE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译： SOI衬底的制造方法和半导体器件的制造方法
公开(公告)号：US20110076837A1
公开(公告)日：2011-03-31
申请号：US12891271
申请日：2010-09-27
申请人： Hidekazu MIYAIRI , Akihisa SHIMOMURA , Tatsuya MIZOI , Eiji HIGA , Yoji NAGANO
发明人： Hidekazu MIYAIRI , Akihisa SHIMOMURA , Tatsuya MIZOI , Eiji HIGA , Yoji NAGANO
IPC分类号： H01L21/30
CPC分类号： H01L27/1203 , H01L21/76254 , H01L27/1214 , H01L27/1266 , H01L29/78654 , H01L51/0027 , H01L2224/03552
摘要： A manufacturing method of an SOI substrate which possesses a base substrate having low heat resistance and a very thin semiconductor layer having high planarity is demonstrated. The method includes: implanting hydrogen ions into a semiconductor substrate to form an ion implantation layer; bonding the semiconductor substrate and a base substrate such as a glass substrate, placing a bonding layer therebetween; heating the substrates bonded to each other to separate the semiconductor substrate from the base substrate, leaving a thin semiconductor layer over the base substrate; irradiating the surface of the thin semiconductor layer with laser light to improve the planarity and recover the crystallinity of the thin semiconductor layer; and thinning the thin semiconductor layer. This method allows the formation of an SOI substrate which has a single-crystalline semiconductor layer with a thickness of 100 nm or less over a base substrate.
摘要翻译：证明具有耐热性低的基底衬底和具有高平坦度的非常薄的半导体层的SOI衬底的制造方法。该方法包括：将氢离子注入到半导体衬底中以形成离子注入层; 键合半导体衬底和诸如玻璃衬底的基底衬底，在其间放置结合层; 加热彼此接合的基板以将半导体基板与基底基板分离，在基底基板上留下薄的半导体层; 用激光照射薄半导体层的表面，以提高平坦度并恢复薄半导体层的结晶度; 并使薄半导体层变薄。该方法允许在基底衬底上形成厚度为100nm以下的单晶半导体层的SOI衬底。

7. 发明申请

US20090072343A1 SEMICONDUCTOR DEVICE AND ELECTRONIC APPLIANCE 审中-公开
标题翻译：半导体器件和电子器件
公开(公告)号：US20090072343A1
公开(公告)日：2009-03-19
申请号：US12207634
申请日：2008-09-10
申请人： Hideto OHNUMA , Yoichi IIKUBO , Yoshiaki YAMAMOTO , Kenichiro MAKINO , Akihisa SHIMOMURA , Eiji HIGA , Tatsuya MIZOI , Yoji NAGANO , Fumito ISAKA , Tetsuya KAKEHATA , Shunpei YAMAZAKI
发明人： Hideto OHNUMA , Yoichi IIKUBO , Yoshiaki YAMAMOTO , Kenichiro MAKINO , Akihisa SHIMOMURA , Eiji HIGA , Tatsuya MIZOI , Yoji NAGANO , Fumito ISAKA , Tetsuya KAKEHATA , Shunpei YAMAZAKI
IPC分类号： H01L29/00
CPC分类号： H01L27/1266 , H01L21/2007 , H01L21/76254 , H01L21/84 , H01L27/1214 , H01L29/4908 , H01L29/66772 , H01L29/78603 , H01L29/78654
摘要： A high-performance semiconductor device using an SOI substrate in which a low-heat-resistance substrate is used as a base substrate. Further, a high-performance semiconductor device formed without using chemical polishing. Further, an electronic device using the semiconductor device. An insulating layer over an insulating substrate, a bonding layer over the insulating layer, and a single-crystal semiconductor layer over the bonding layer are included, and the arithmetic-mean roughness of roughness in an upper surface of the single-crystal semiconductor layer is greater than or equal to 1 nm and less than or equal to 7 nm. Alternatively, the root-mean-square roughness of the roughness may be greater than or equal to 1 nm and less than or equal to 10 nm. Alternatively, a maximum difference in height of the roughness may be greater than or equal to 5 nm and less than or equal to 250 nm.
摘要翻译：使用其中使用低耐热性衬底作为基底的SOI衬底的高性能半导体器件。而且，不用化学抛光而形成的高性能半导体器件。此外，使用该半导体器件的电子设备。包括绝缘基板上的绝缘层，绝缘层上的接合层和接合层上的单晶半导体层，单晶半导体层上表面的运算平均粗糙度为大于或等于1nm且小于或等于7nm。或者，粗糙度的均方根粗糙度可以大于或等于1nm且小于或等于10nm。或者，粗糙度的最大高度差可以大于或等于5nm且小于或等于250nm。

8. 发明申请

US20110136320A1 METHOD OF MANUFACTURING SOI SUBSTRATE 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20110136320A1
公开(公告)日：2011-06-09
申请号：US13019626
申请日：2011-02-02
申请人： Shunpei YAMAZAKI , Eiji HIGA , Yoji NAGANO , Tatsuya MIZOI , Akihisa SHIMOMURA
发明人： Shunpei YAMAZAKI , Eiji HIGA , Yoji NAGANO , Tatsuya MIZOI , Akihisa SHIMOMURA
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/2007 , H01L21/268 , H01L21/302 , H01L21/84
摘要： To provide an SOI substrate with an SOI layer that can be put into practical use, even when a substrate with a low allowable temperature limit such as a glass substrate is used, and to provide a semiconductor substrate formed using such an SOI substrate. In order to bond a single-crystalline semiconductor substrate to a base substrate such as a glass substrate, a silicon oxide film formed by CVD with organic silane as a source material is used as a bonding layer, for example. Accordingly, an SOL substrate with a strong bond portion can be formed even when a substrate with an allowable temperature limit of less than or equal to 700° C. such as a glass substrate is used. A semiconductor layer separated from the single-crystalline semiconductor substrate is irradiated with a laser beam so that the surface of the semiconductor layer is planarized and the crystallinity thereof is recovered.
摘要翻译：为了提供具有可实际使用的SOI层的SOI衬底，即使使用诸如玻璃衬底的耐受温度低的衬底的衬底，并且提供使用这种SOI衬底形成的半导体衬底。为了将单晶半导体衬底接合到诸如玻璃衬底的基底衬底，例如通过用有机硅烷作为源材料通过CVD形成的氧化硅膜被用作接合层。因此，即使使用具有小于等于700℃的容许温度限制的基板，例如玻璃基板，也可以形成具有强结合部的SOL基板。用激光束照射与单晶半导体衬底分离的半导体层，使得半导体层的表面平坦化并且其结晶度被回收。

9. 发明申请

US20090115028A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE 审中-公开
标题翻译：制造半导体衬底，半导体器件和电子器件的方法
公开(公告)号：US20090115028A1
公开(公告)日：2009-05-07
申请号：US12246569
申请日：2008-10-07
申请人： Akihisa SHIMOMURA , Fumito ISAKA , Yoji NAGANO , Junpei MOMO
发明人： Akihisa SHIMOMURA , Fumito ISAKA , Yoji NAGANO , Junpei MOMO
IPC分类号： H01L21/762 , H01L29/06
CPC分类号： H01L27/1266 , H01L21/02532 , H01L21/02686 , H01L21/76254 , H01L27/1214 , H01L27/1218 , H01L27/1285 , H01L29/66772
摘要： A semiconductor substrate including a single crystal semiconductor layer with a buffer layer interposed therebetween is manufactured. A semiconductor substrate is doped with hydrogen to form a damaged layer containing a large amount of hydrogen. After the single crystal semiconductor substrate and a supporting substrate are bonded, the semiconductor substrate is heated so that the single crystal semiconductor substrate is separated along a separation plane. The single crystal semiconductor layer is irradiated with a laser beam from the single crystal semiconductor layer side to melt a region in the depth direction from the surface of the laser-irradiated region of the single crystal semiconductor layer. Recrystallization progresses based on the plane orientation of the single crystal semiconductor layer which is solid without being melted; therefore, crystallinity of the single crystal semiconductor layer is recovered and the surface of the single crystal semiconductor layer is planarized.
摘要翻译：制造包括其间具有缓冲层的单晶半导体层的半导体衬底。掺杂氢的半导体衬底形成含有大量氢的损伤层。在单晶半导体衬底和支撑衬底接合之后，加热半导体衬底，使得单晶半导体衬底沿着分离平面分离。用单晶半导体层侧的激光照射单晶半导体层，从单晶半导体层的激光照射区域的表面向深度方向熔融区域。基于固体的单晶半导体层的平面取向而不熔化而进行重结晶; 因此，回收单晶半导体层的结晶度，使单晶半导体层的表面平坦化。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式