专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06664496B2 Plasma processing system 有权
公开(公告)号：US06664496B2
公开(公告)日：2003-12-16
申请号：US10107304
申请日：2002-03-28
申请人： Yoshimi Watabe , Shinya Hasegawa , Yoichiro Numasawa , Yukito Nakagawa
发明人： Yoshimi Watabe , Shinya Hasegawa , Yoichiro Numasawa , Yukito Nakagawa
IPC分类号： B23K900
CPC分类号： H01J37/32082
摘要： A plasma processing system is comprised of a reaction vessel in which are provided a parallel high frequency electrode and ground electrode. The ground electrode is fixed at a ground potential portion, that is, a flange, by a conductive support column. A connection portion from the ground electrode to the ground potential portion, for example, the portions other than the surface of the ground electrode and the surface of the support column etc. are covered by an insulator serving as a high frequency power propagator while the surface of the insulator is covered completely by a conductive member except at the portion for introducing the high frequency power. In this plasma processing system, it is possible to reliably prevent undesirable discharge from occurring at the rear surface of the ground electrode when processing a substrate mounted on the ground electrode to deposit a film using a high frequency power in the VHF band.

2. 发明授权

US08002947B2 Plasma treatment system and cleaning method of the same 有权
标题翻译：等离子体处理系统和清洗方法相同
公开(公告)号：US08002947B2
公开(公告)日：2011-08-23
申请号：US12289742
申请日：2008-11-03
申请人： Yoichiro Numasawa , Yoshimi Watabe
发明人： Yoichiro Numasawa , Yoshimi Watabe
IPC分类号： B08B7/04 , B08B9/00
CPC分类号： H01J37/32862 , C23C16/4405 , C23C16/5096 , H01J37/32568 , Y02C20/30 , Y02P70/605 , Y10S438/905
摘要： A plasma treatment apparatus has a reaction vessel (11) provided with a top electrode (13) and a bottom electrode (14), and the first electrode is supplied with a VHF band high frequency power from a VHF band high frequency power source (32), while the bottom electrode on which a substrate (12) is loaded and is moved by a vertical movement mechanism. The plasma treatment system has a controller (36) which, at the time of a cleaning process after forming a film on the substrate (12), controls a vertical movement mechanism to move the bottom electrode to narrow the gap between the top electrode and bottom electrode and form a narrow space and starts cleaning by a predetermined high density plasma in that narrow space. In the cleaning process, step cleaning is performed. Due to this, the efficiency of utilization of the cleaning gas is increased, the amount of exhaust gas is cut, and the cleaning speed is raised. Further, the amount of the process gas used is cut and the process cost is reduced.
摘要翻译：等离子体处理装置具有设置有顶部电极（13）和底部电极（14）的反应容器（11），并且从VHF频带高频电源（32）向第一电极提供VHF频带高频功率），而在其上载置基板（12）并通过垂直移动机构移动的底部电极。等离子体处理系统具有控制器（36），其在基板（12）上形成膜之后进行清洁处理时控制垂直移动机构以移动底部电极以使顶部电极和底部之间的间隙变窄电极并形成狭窄的空间，并在该狭窄空间中通过预定的高密度等离子体开始清洁。在清洁过程中，执行步骤清洁。由此，清洁气体的利用效率提高，排气量被切断，清洗速度提高。此外，所使用的处理气体的量被切断，并且工艺成本降低。

3. 发明申请

US20090095217A1 Plasma treatment system and cleaning method of the same 有权
标题翻译：等离子体处理系统和清洗方法相同
公开(公告)号：US20090095217A1
公开(公告)日：2009-04-16
申请号：US12289742
申请日：2008-11-03
申请人： Yoichiro Numasawa , Yoshimi Watabe
发明人： Yoichiro Numasawa , Yoshimi Watabe
IPC分类号： C23C16/52
CPC分类号： H01J37/32862 , C23C16/4405 , C23C16/5096 , H01J37/32568 , Y02C20/30 , Y02P70/605 , Y10S438/905
摘要： A plasma treatment apparatus has a reaction vessel (11) provided with a top electrode (13) and a bottom electrode (14), and the first electrode is supplied with a VHF band high frequency power from a VHF band high frequency power source (32), while the bottom electrode on which a substrate (12) is loaded and is moved by a vertical movement mechanism. The plasma treatment system has a controller (36) which, at the time of a cleaning process after forming a film on the substrate (12), controls a vertical movement mechanism to move the bottom electrode to narrow the gap between the top electrode and bottom electrode and form a narrow space and starts cleaning by a predetermined high density plasma in that narrow space. In the cleaning process, step cleaning is performed. Due to this, the efficiency of utilization of the cleaning gas is increased, the amount of exhaust gas is cut, and the cleaning speed is raised. Further, the amount of the process gas used is cut and the process cost is reduced.
摘要翻译：等离子体处理装置具有设置有顶部电极（13）和底部电极（14）的反应容器（11），并且从VHF频带高频电源（32）向第一电极提供VHF频带高频功率），而在其上载置基板（12）并通过垂直移动机构移动的底部电极。等离子体处理系统具有控制器（36），其在基板（12）上形成膜之后进行清洁处理时控制垂直移动机构以移动底部电极以使顶部电极和底部之间的间隙变窄电极并形成狭窄的空间，并在该狭窄空间中通过预定的高密度等离子体开始清洁。在清洁过程中，执行步骤清洁。由此，清洁气体的利用效率提高，排气量被切断，清洗速度提高。此外，所使用的处理气体的量被切断，并且工艺成本降低。

4. 发明授权

US07530359B2 Plasma treatment system and cleaning method of the same 有权
公开(公告)号：US07530359B2
公开(公告)日：2009-05-12
申请号：US10477457
申请日：2002-05-16
申请人： Yoichiro Numasawa , Yoshimi Watabe
发明人： Yoichiro Numasawa , Yoshimi Watabe
IPC分类号： B08B7/04 , B08B7/00
CPC分类号： H01J37/32862 , C23C16/4405 , C23C16/5096 , H01J37/32568 , Y02C20/30 , Y02P70/605 , Y10S438/905
摘要： A plasma treatment apparatus has a reaction vessel (11) provided with a top electrode (13) and a bottom electrode (14), and the first electrode is supplied with a VHF band high frequency power from a VHF band high frequency power source (32), while the bottom electrode on which a substrate (12) is loaded and is moved by a vertical movement mechanism. The plasma treatment system has a controller (36) which, at the time of a cleaning process after forming a film on the substrate (12), controls a vertical movement mechanism to move the bottom electrode to narrow the gap between the top electrode and bottom electrode and form a narrow space and starts cleaning by a predetermined high density plasma in that narrow space. In the cleaning process, step cleaning is performed. Due to this, the efficiency of utilization of the cleaning gas is increased, the amount of exhaust gas is cut, and the cleaning speed is raised. Further, the amount of the process gas used is cut and the process cost is reduced.

5. 发明授权

US07312418B2 Semiconductor thin film forming system 有权
标题翻译：半导体薄膜成型系统
公开(公告)号：US07312418B2
公开(公告)日：2007-12-25
申请号：US11021306
申请日：2004-12-23
申请人： Hiroshi Tanabe , Tomoyuki Akashi , Yoshimi Watabe
发明人： Hiroshi Tanabe , Tomoyuki Akashi , Yoshimi Watabe
IPC分类号： H01L21/268
CPC分类号： H01L21/02675 , B23K26/04 , B23K26/043 , B23K26/046 , B23K26/0604 , B23K26/0608 , B23K26/0622 , B23K26/066 , B23K26/067 , B23K26/0732 , H01L21/2026 , H01L21/268 , H01L21/67225 , H01L27/1285
摘要： In a semiconductor thin film forming system for modifying a predetermined region of a semiconductor thin film by exposing the semiconductor thin film to a projected light patterned through a pattern formed on a photo mask, the system includes a mechanism (opt20′) for uniformizing the light for exposure in a predetermined area on the photo mask. This system can provide a crystallized silicon film having a trap state density less than 1012 cm−2 and can provide a silicon-insulating film interface exhibiting a low interface state density.
摘要翻译：在半导体薄膜形成系统中，通过将半导体薄膜暴露于通过形成在光掩模上的图案图案化的投影光，来修饰半导体薄膜的预定区域，该系统包括用于使半导体薄膜均匀化的机构（opt 20'）用于在光掩模上的预定区域中曝光的光。该系统可以提供具有小于1012cm -2的陷阱状态密度的结晶硅膜，并且可以提供表现出低界面态密度的硅绝缘膜界面。

6. 发明申请

US20050109743A1 Semiconductor thin film forming system 有权
标题翻译：半导体薄膜成型系统
公开(公告)号：US20050109743A1
公开(公告)日：2005-05-26
申请号：US11021306
申请日：2004-12-23
申请人： Hiroshi Tanabe , Tomoyuki Akashi , Yoshimi Watabe
发明人： Hiroshi Tanabe , Tomoyuki Akashi , Yoshimi Watabe
IPC分类号： H01L21/205 , B23K26/06 , B23K26/067 , B23K26/073 , C23C14/28 , H01L21/027 , H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786 , H01S3/00
CPC分类号： H01L21/02675 , B23K26/04 , B23K26/043 , B23K26/046 , B23K26/0604 , B23K26/0608 , B23K26/0622 , B23K26/066 , B23K26/067 , B23K26/0732 , H01L21/2026 , H01L21/268 , H01L21/67225 , H01L27/1285
摘要： In a semiconductor thin film forming system for modifying a predetermined region of a semiconductor thin film by exposing the semiconductor thin film to a projected light patterned through a pattern formed on a photo mask, the system includes a mechanism (opt20′) for uniformizing the light for exposure in a predetermined area on the photo mask. This system can provide a crystallized silicon film having a trap state density less than 1012 cm−2 and can provide a silicon-insulating film interface exhibiting a low interface state density.
摘要翻译：在半导体薄膜形成系统中，通过将半导体薄膜暴露于通过形成在光掩模上的图案图案化的投影光，来修饰半导体薄膜的预定区域，该系统包括用于使半导体薄膜均匀化的机构（opt 20'）用于在光掩模上的预定区域中曝光的光。该系统可以提供具有小于1012cm -2的陷阱状态密度的结晶硅膜，并且可以提供表现出低界面态密度的硅绝缘膜界面。

7. 发明授权

US06503816B2 Thin film formation by inductively-coupled plasma CVD process 有权
标题翻译：通过电感耦合等离子体CVD工艺形成薄膜
公开(公告)号：US06503816B2
公开(公告)日：2003-01-07
申请号：US09832860
申请日：2001-04-12
申请人： Norikazu Ito , Yoshimi Watabe , Akihisa Matsuda , Michio Kondo
发明人： Norikazu Ito , Yoshimi Watabe , Akihisa Matsuda , Michio Kondo
IPC分类号： H01L2120
CPC分类号： H01J37/321 , C23C16/24 , C23C16/509 , C23C16/515 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A thin film forming method and apparatus forms a thin film having an excellent thickness uniformity over a substrate, particularly a large-area substrate. The thin film forming method and apparatus includes a film forming chamber in which an inductive coupling electrode having a feeding portion and a grounding portion at its two ends is arranged, a high-frequency power source for feeding a high-frequency power to the feeding portion, and a waveform generator for amplitude-modulating the high-frequency power outputted from the high-frequency power source. The amplitude-modulated high-frequency power is fed to the inductive coupling electrode to generate a plasma so that a thin film may be formed on a substrate arranged to face the inductive coupling electrode.
摘要翻译：薄膜形成方法和装置形成在基板，特别是大面积基板上具有优异的厚度均匀性的薄膜。薄膜形成方法和装置包括：成膜室，其中布置有具有馈电部分和其两端的接地部分的感应耦合电极，用于将高频电力馈送到馈电部分的高频电源以及用于对从高频电源输出的高频电力进行幅度调制的波形发生器。将幅度调制的高频功率馈送到感应耦合电极以产生等离子体，使得可以在布置成面对感应耦合电极的基板上形成薄膜。

8. 发明申请

US20070166945A1 SEMICONDUCTOR THIN FILM FORMING SYSTEM 审中-公开
标题翻译：半导体薄膜成型系统
公开(公告)号：US20070166945A1
公开(公告)日：2007-07-19
申请号：US11678527
申请日：2007-02-23
申请人： Hiroshi TANABE , Tomoyuki Akashi , Yoshimi Watabe
发明人： Hiroshi TANABE , Tomoyuki Akashi , Yoshimi Watabe
IPC分类号： H01L21/76 , H01L29/74 , H01L29/47 , H01L31/111
CPC分类号： H01L21/02675 , B23K26/04 , B23K26/043 , B23K26/046 , B23K26/0604 , B23K26/0608 , B23K26/0622 , B23K26/066 , B23K26/067 , B23K26/0732 , H01L21/2026 , H01L21/268 , H01L21/67225 , H01L27/1285
摘要： In a semiconductor thin film forming system for modifying a predetermined region of a semiconductor thin film by exposing the semiconductor thin film to a projected light patterned through a pattern formed on a photo mask, the system includes a mechanism (opt20′) for uniformizing the light for exposure in a predetermined area on the photo mask. This system can provide a crystallized silicon film having a trap state density less than 1012 cm−2 and can provide a silicon-insulating film interface exhibiting a low interface state density.
摘要翻译：在半导体薄膜形成系统中，通过将半导体薄膜暴露于通过形成在光掩模上的图案图案化的投影光来修正半导体薄膜的预定区域，该系统包括用于使光均匀化的机构（opt20'）用于在光掩模上的预定区域中曝光。该系统可以提供具有小于1012cm -2的陷阱状态密度的结晶硅膜，并且可以提供表现出低界面态密度的硅绝缘膜界面。

9. 发明申请

US20050067934A1 Discharge apparatus, plasma processing method and solar cell 审中-公开
标题翻译：放电装置，等离子体处理方法和太阳能电池
公开(公告)号：US20050067934A1
公开(公告)日：2005-03-31
申请号：US10670476
申请日：2003-09-26
申请人： Masashi Ueda , Tomoko Takagi , Norikazu Ito , Yoshimi Watabe
发明人： Masashi Ueda , Tomoko Takagi , Norikazu Ito , Yoshimi Watabe
IPC分类号： H01J17/26 , H01J37/32 , H01J61/28 , H01L31/20 , H05H1/24
CPC分类号： H01L31/202 , H01J37/32091 , H01J2237/3132 , H01J2237/3137 , H01J2237/3142 , H05H1/46 , H05H2001/463 , Y02E10/50 , Y02P70/521
摘要： The object of this invention is to realize the new configuration of antenna and the electric power feeding method which substantially suppress the generation of standing wave and consequently to provide a discharge apparatus to generate plasma having an excellent uniformity, a plasma processing method for large-area substrate, and a solar cell manufactured with a high productivity. The present invention is composed of a plurality of U-shaped antenna elements having a power feeding end and a grounded end which are arranged to form an array antenna in such a way that the grounded end and the power feeding end are alternately placed in parallel at regular intervals on a plane, wherein the alternating current electric powers with the same excitation frequency are simultaneously fed to the power feeding ends with the phase shift of 180 degrees between adjacent power feeding ends, the excitation frequency of the alternating current power is 10 MHz-2 GHz, and the length of the conductor is set so that the measured ratio of reflected wave to incident wave is 0.1 or less at the power feeding end. It is also possible to determine the length La of straight conductor to hold the inequality: 0.5(1/α)
摘要翻译：本发明的目的是实现基本上抑制驻波产生的天线的新配置和馈电方法，从而提供具有均匀性优异的等离子体的放电装置，大面积等离子体处理方法基板和以高生产率制造的太阳能电池。本发明由具有供电端和接地端的多个U形天线元件组成，这些U形天线元件被布置成形成阵列天线，使得接地端和馈电端交替地平行放置在其中具有相同激励频率的交流电功率在相邻供电端之间以180度的相移同时馈送到馈电端，交流功率的激励频率为10MHz- 2GHz，并且设定导体的长度，使得测得的反射波与入射波的比例在馈电端为0.1或更小。也可以确定直线导体的长度La以保持不等式：0.5（1 /α）

10. 发明授权

US5437895A Plasma CVD process for forming amorphous silicon thin film 失效
标题翻译：用于形成非晶硅薄膜的等离子体CVD工艺
公开(公告)号：US5437895A
公开(公告)日：1995-08-01
申请号：US276906
申请日：1994-07-19
申请人： Akira Kodama , Yoshimi Watabe , Massashi Ueda
发明人： Akira Kodama , Yoshimi Watabe , Massashi Ueda
IPC分类号： C23C16/24 , H01L21/205 , B05D3/06
CPC分类号： H01L21/02422 , H01L21/02532 , H01L21/0262
摘要： A process for forming a thin film of amorphous silicon of a uniform thickness on a relatively large glass plate. The process comprising forming a thin film of amorphous silicon on an insulating substrate by a plasma enhanced chemical vapor deposition process while intermittently generating a high frequency discharge. The duration of each discharge is set shorter than the time period necessary for the DC bias voltage, which is generated on the high frequency-applying electrode side, to attain a saturated value.
摘要翻译：在较大的玻璃板上形成厚度均匀的非晶硅薄膜的方法。该方法包括通过等离子体增强化学气相沉积工艺在绝缘衬底上形成非晶硅薄膜，同时间歇地产生高频放电。每个放电的持续时间设定为短于在高频施加电极侧产生的DC偏置电压所需的时间以获得饱和值。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式