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1. 发明授权

US09437768B2 Photoelectric conversion device 有权
标题翻译：光电转换装置
公开(公告)号：US09437768B2
公开(公告)日：2016-09-06
申请号：US13615700
申请日：2012-09-14
申请人： Yoichiro Numasawa , Yasushi Maeda , Yoshikazu Hiura , Shunpei Yamazaki
发明人： Yoichiro Numasawa , Yasushi Maeda , Yoshikazu Hiura , Shunpei Yamazaki
IPC分类号： H01L31/044 , H01L31/072 , H01L31/0747 , H01L31/18 , H01L31/0312
CPC分类号： H01L31/072 , H01L31/0312 , H01L31/0747 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A photoelectric conversion device with low resistance loss and high conversion efficiency is provided. The photoelectric conversion device includes a first silicon semiconductor layer and a second silicon semiconductor layer between a pair of electrodes. The first silicon semiconductor layer is provided over one surface of a crystalline silicon substrate having one conductivity type and has a conductivity type opposite to that of the crystalline silicon substrate, and the second silicon semiconductor layer is provided on the other surface of the crystalline silicon substrate and has a conductivity type which is the same as that of the crystalline silicon substrate. Further, the first silicon semiconductor layer and the second silicon semiconductor layer each have a carrier concentration varying in the film thickness direction.
摘要翻译：提供具有低电阻损耗和高转换效率的光电转换装置。光电转换装置包括在一对电极之间的第一硅半导体层和第二硅半导体层。第一硅半导体层设置在具有一种导电类型的结晶硅衬底的一个表面上，并且具有与晶体硅衬底相反的导电类型，并且第二硅半导体层设置在晶体硅衬底的另一个表面上并且具有与晶体硅衬底相同的导电类型。此外，第一硅半导体层和第二硅半导体层各自具有在膜厚度方向上变化的载流子浓度。

2. 发明申请

US20130082344A1 PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：光电转换器件
公开(公告)号：US20130082344A1
公开(公告)日：2013-04-04
申请号：US13615700
申请日：2012-09-14
申请人： Yoichiro Nuwasawa , Yasushi Maeda , Yoshikazu Hiura , Shunpei Yamazaki
发明人： Yoichiro Nuwasawa , Yasushi Maeda , Yoshikazu Hiura , Shunpei Yamazaki
IPC分类号： H01L31/0232
CPC分类号： H01L31/072 , H01L31/0312 , H01L31/0747 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A photoelectric conversion device with low resistance loss and high conversion efficiency is provided. The photoelectric conversion device includes a first silicon semiconductor layer and a second silicon semiconductor layer between a pair of electrodes. The first silicon semiconductor layer is provided over one surface of a crystalline silicon substrate having one conductivity type and has a conductivity type opposite to that of the crystalline silicon substrate, and the second silicon semiconductor layer is provided on the other surface of the crystalline silicon substrate and has a conductivity type which is the same as that of the crystalline silicon substrate. Further, the first silicon semiconductor layer and the second silicon semiconductor layer each have a carrier concentration varying in the film thickness direction.
摘要翻译：提供具有低电阻损耗和高转换效率的光电转换装置。光电转换装置包括在一对电极之间的第一硅半导体层和第二硅半导体层。第一硅半导体层设置在具有一种导电类型的结晶硅衬底的一个表面上，并且具有与晶体硅衬底相反的导电类型，并且第二硅半导体层设置在晶体硅衬底的另一个表面上并且具有与晶体硅衬底相同的导电类型。此外，第一硅半导体层和第二硅半导体层各自具有在膜厚度方向上变化的载流子浓度。

3. 发明授权

US08207011B2 Method of manufacturing photoelectric conversion device 有权
标题翻译：制造光电转换装置的方法
公开(公告)号：US08207011B2
公开(公告)日：2012-06-26
申请号：US12860283
申请日：2010-08-20
申请人： Yoshikazu Hiura , Riho Kataishi , Shunpei Yamazaki
发明人： Yoshikazu Hiura , Riho Kataishi , Shunpei Yamazaki
IPC分类号： H01L21/00
CPC分类号： H01L31/1824 , C23C16/45557 , C23C16/45565 , C23C16/5096 , H01L21/02532 , H01L21/0262 , H01L31/03921 , H01L31/046 , H01L31/0463 , H01L31/0465 , H01L31/077 , Y02E10/545 , Y02P70/521
摘要： Provided is a technique for manufacturing a photoelectric conversion element using a dense crystalline semiconductor film without a cavity between crystal grains. A method of manufacturing a photoelectric conversion device having a first electrode, a unit cell, and a second electrode over a substrate includes the steps of: forming a plasma region between a first electrode and a second electrode by supplying high-frequency power of 60 MHz or less to the first electrode under a condition where a pressure of a reactive gas in a chamber of a plasma CVD apparatus is set to from 450 Pa to 13332 Pa, and a distance between the first electrode and the second electrode of the plasma CVD apparatus is set to from 1 mm to 20 mm, preferably, 4 mm to 16 mm; forming deposition precursors including a crystalline semiconductor in a gas phase including the plasma region; forming a crystal nucleus having a grain size of from 5 nm to 15 nm by depositing the deposition precursors; and forming a semiconductor film having a first conductivity type, a semiconductor film effective in photoelectric conversion, or a semiconductor film having a first conductivity type in the unit cell, by growing a crystal from the crystal nucleus.
摘要翻译：本发明提供一种使用在晶粒之间没有空腔的致密结晶半导体膜的光电转换元件的制造技术。制造在基板上具有第一电极，单元电池和第二电极的光电转换装置的方法包括以下步骤：通过提供60MHz的高频功率在第一电极和第二电极之间形成等离子体区域等离子体CVD装置的室内的反应气体的压力设定为450Pa〜13332Pa，等离子体CVD装置的第一电极和第二电极之间的距离设定为第一电极设定为1mm至20mm，优选为4mm至16mm; 在包括所述等离子体区域的气相中形成包括结晶半导体的沉积前体; 通过沉积沉积前体形成晶粒尺寸为5nm至15nm的晶核; 以及通过从晶核生长晶体，形成具有第一导电类型的半导体膜，有效于光电转换的半导体膜或具有第一导电类型的半导体膜。

4. 发明授权

US08481370B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08481370B2
公开(公告)日：2013-07-09
申请号：US11498164
申请日：2006-08-03
申请人： Kazuo Nishi , Hiroki Adachi , Naoto Kusumoto , Yuusuke Sugawara , Hidekazu Takahashi , Daiki Yamada , Yoshikazu Hiura
发明人： Kazuo Nishi , Hiroki Adachi , Naoto Kusumoto , Yuusuke Sugawara , Hidekazu Takahashi , Daiki Yamada , Yoshikazu Hiura
IPC分类号： H01L21/00
CPC分类号： H01L31/0203 , H01L23/49805 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/2929 , H01L2224/293 , H01L2224/83851 , H01L2924/01078 , H01L2924/01079 , H01L2924/07811 , H01L2924/09701 , H01L2924/12036 , H01L2924/12042 , H01L2924/14 , H01L2924/3512 , H01L2924/00 , H01L2924/00014
摘要： The present invention provides a semiconductor device having a structure that can be mounted on a wiring substrate, as for the semiconductor device formed over a thin film-thickness substrate, a film-shaped substrate, or a sheet-like substrate. In addition, the present invention provides a method for manufacturing a semiconductor device that is capable of raising a reliability of mounting on a wiring substrate. One feature of the present invention is to bond a semiconductor element formed on a substrate having isolation to a member that a conductive film is formed via a medium having an anisotropic conductivity.
摘要翻译：本发明提供一种半导体器件，其具有能够安装在布线基板上的结构，对于形成在薄膜基板，薄膜状基板或片状基板上的半导体器件。另外，本发明提供一种能够提高安装在布线基板上的可靠性的半导体装置的制造方法。本发明的一个特征是通过具有各向异性导电性的介质将形成在具有隔离衬底的半导体元件与形成有导电膜的构件接合。

5. 发明授权

US08513046B2 Photoelectric conversion device and manufacturing method thereof 失效
标题翻译：光电转换装置及其制造方法
公开(公告)号：US08513046B2
公开(公告)日：2013-08-20
申请号：US13252299
申请日：2011-10-04
申请人： Yoshikazu Hiura , Fumito Isaka
发明人： Yoshikazu Hiura , Fumito Isaka
IPC分类号： H01L21/00
CPC分类号： H01L31/1824 , H01L31/03685 , H01L31/075 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A photoelectric conversion device including a single crystal silicon substrate; a first amorphous silicon layer in contact with a surface (a light-receiving surface) of the single crystal silicon substrate; a first polarity (p-type) impurity diffusion layer in contact with the first amorphous silicon layer; a second amorphous silicon layer in contact with a back surface of the single crystal silicon substrate; and a second polarity (n-type) impurity diffusion layer in contact with the second amorphous silicon layer, in which the first and second polarity impurity diffusion layers are microcrystalline silicon layers formed under a deposition condition where a pressure in a reaction chamber is adjusted to be greater than or equal to 450 Pa and less than or equal to 10000 Pa is provided.
摘要翻译：一种包括单晶硅衬底的光电转换装置; 与单晶硅衬底的表面（受光面）接触的第一非晶硅层; 与第一非晶硅层接触的第一极性（p型）杂质扩散层; 与所述单晶硅衬底的背面接触的第二非晶硅层; 以及与第二非晶硅层接触的第二极性（n型）杂质扩散层，其中第一和第二极性杂质扩散层是在反应室中的压力被调节到的沉积条件下形成的微晶硅层大于或等于450Pa并且小于或等于10000Pa。

6. 发明授权

US07985664B2 Film formation apparatus, method for forming film, and method for manufacturing photoelectric conversion device 有权
标题翻译：成膜装置，薄膜形成方法以及光电转换装置的制造方法
公开(公告)号：US07985664B2
公开(公告)日：2011-07-26
申请号：US12627473
申请日：2009-11-30
申请人： Yoshikazu Hiura , Hiroki Adachi , Hironobu Takahashi , Yuusuke Sugawara , Tatsuya Arao , Kazuo Nishi , Yasuyuki Arai
发明人： Yoshikazu Hiura , Hiroki Adachi , Hironobu Takahashi , Yuusuke Sugawara , Tatsuya Arao , Kazuo Nishi , Yasuyuki Arai
IPC分类号： H01L21/20 , C23C16/54
CPC分类号： H01L31/202 , C23C16/24 , C23C16/458 , C23C16/545 , H05H1/2406 , H05H2001/2431 , H05H2001/485 , Y02E10/50 , Y02P70/521
摘要： The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or between the film formation chambers, a slit provided in a portion where the substrate comes in and out in the buffer chamber, and a second transfer chamber having a roller for rewinding the substrate. The slit is provided with at least one touch roller, and the touch roller is in contact with a film formation surface of the substrate. In addition, the present invention also relates to a method for forming a film and a method for manufacturing a photoelectric conversion device that are performed by using such a film formation apparatus.
摘要翻译：成膜装置技术领域本发明涉及一种成膜装置，其特征在于，包括具有用于送出基板的辊的第一转印室，具有排出电极的成膜室，设置在转印室和成膜室之间或成膜室之间的缓冲室设置在衬底在缓冲室中进出的部分的狭缝，以及具有用于重新卷绕衬底的辊的第二传送室。狭缝设置有至少一个触摸辊，并且触摸辊与基板的成膜表面接触。此外，本发明还涉及一种用于形成膜的方法和通过使用这种成膜装置进行的光电转换装置的制造方法。

7. 发明申请

US20060270114A1 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US20060270114A1
公开(公告)日：2006-11-30
申请号：US11498164
申请日：2006-08-03
申请人： Kazuo Nishi , Hiroki Adachi , Naoto Kusumoto , Yuusuke Sugawara , Hidekazu Takahashi , Daiki Yamada , Yoshikazu Hiura
发明人： Kazuo Nishi , Hiroki Adachi , Naoto Kusumoto , Yuusuke Sugawara , Hidekazu Takahashi , Daiki Yamada , Yoshikazu Hiura
IPC分类号： H01L21/00
CPC分类号： H01L31/0203 , H01L23/49805 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/2929 , H01L2224/293 , H01L2224/83851 , H01L2924/01078 , H01L2924/01079 , H01L2924/07811 , H01L2924/09701 , H01L2924/12036 , H01L2924/12042 , H01L2924/14 , H01L2924/3512 , H01L2924/00 , H01L2924/00014
摘要： The present invention provides a semiconductor device having a structure that can be mounted on a wiring substrate, as for the semiconductor device formed over a thin film-thickness substrate, a film-shaped substrate, or a sheet-like substrate. In addition, the present invention provides a method for manufacturing a semiconductor device that is capable of raising a reliability of mounting on a wiring substrate. One feature of the present invention is to bond a semiconductor element formed on a substrate having isolation to a member that a conductive film is formed via a medium having an anisotropic conductivity.

8. 发明授权

US08192545B2 Film formation apparatus, method for forming film, and method for manufacturing photoelectric conversion device 有权
标题翻译：成膜装置，薄膜形成方法以及光电转换装置的制造方法
公开(公告)号：US08192545B2
公开(公告)日：2012-06-05
申请号：US13154503
申请日：2011-06-07
申请人： Yoshikazu Hiura , Hiroki Adachi , Hironobu Takahashi , Yuusuke Sugawara , Tatsuya Arao , Kazuo Nishi , Yasuyuki Arai
发明人： Yoshikazu Hiura , Hiroki Adachi , Hironobu Takahashi , Yuusuke Sugawara , Tatsuya Arao , Kazuo Nishi , Yasuyuki Arai
IPC分类号： C23C16/00 , C23C16/50 , C23C16/458
CPC分类号： H01L31/202 , C23C16/24 , C23C16/458 , C23C16/545 , H05H1/2406 , H05H2001/2431 , H05H2001/485 , Y02E10/50 , Y02P70/521
摘要： The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or between the film formation chambers, a slit provided in a portion where the substrate comes in and out in the buffer chamber, and a second transfer chamber having a roller for rewinding the substrate. The slit is provided with at least one touch roller, and the touch roller is in contact with a film formation surface of the substrate. In addition, the present invention also relates to a method for forming a film and a method for manufacturing a photoelectric conversion device that are performed by using such a film formation apparatus.
摘要翻译：成膜装置技术领域本发明涉及一种成膜装置，其特征在于，包括具有用于送出基板的辊的第一转印室，具有排出电极的成膜室，设置在转印室和成膜室之间或成膜室之间的缓冲室设置在衬底在缓冲室中进出的部分的狭缝，以及具有用于重新卷绕衬底的辊的第二传送室。狭缝设置有至少一个触摸辊，并且触摸辊与基板的成膜表面接触。此外，本发明还涉及一种用于形成膜的方法和通过使用这种成膜装置进行的光电转换装置的制造方法。

9. 发明申请

US20100071767A1 PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：光电转换装置及其制造方法
公开(公告)号：US20100071767A1
公开(公告)日：2010-03-25
申请号：US12564991
申请日：2009-09-23
申请人： Sho KATO , Yoshikazu Hiura , Akihisa Shimomura , Takashi Ohtsuki , Satoshi Toriumi , Yasuyuki Arai
发明人： Sho KATO , Yoshikazu Hiura , Akihisa Shimomura , Takashi Ohtsuki , Satoshi Toriumi , Yasuyuki Arai
IPC分类号： H01L31/0248 , H01L31/18
CPC分类号： H01L31/077 , H01L21/0237 , H01L21/02532 , H01L21/0262 , H01L21/02636 , H01L31/036 , H01L31/0376 , H01L31/075 , H01L31/1804 , H01L31/20 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： An object is to increase conversion efficiency of a photoelectric conversion device without increase in the manufacturing steps. The photoelectric conversion device includes a first semiconductor layer formed using a single crystal semiconductor having one conductivity type which is formed over a supporting substrate, a buffer layer including a single crystal region and an amorphous region, a second semiconductor layer which includes a single crystal region and an amorphous region and is provided over the buffer layer, and a third semiconductor layer having a conductivity type opposite to the one conductivity type, which is provided over the second semiconductor layer. A proportion of the single crystal region is higher than that of the amorphous region on the first semiconductor layer side in the second semiconductor layer, and the proportion of the amorphous region is higher than that of the single crystal region on the third semiconductor layer side.
摘要翻译：目的在于提高光电转换装置的转换效率，而不增加制造步骤。光电转换装置包括使用在支撑基板上形成的具有一种导电类型的单晶半导体形成的第一半导体层，包括单晶区域和非晶区域的缓冲层，包括单晶区域的第二半导体层和非晶区域，并且设置在所述缓冲层上，以及设置在所述第二半导体层上的具有与所述一种导电类型相反的导电类型的第三半导体层。单晶区域的比例高于第二半导体层中的第一半导体层侧的非晶区域的比例，并且非晶区域的比例高于第三半导体层侧的单晶区域的比例。

10. 发明申请

US20070123005A1 Film formation apparatus, method for forming film, and method for manufacturing photoelectric conversion device 有权
标题翻译：成膜装置，薄膜形成方法以及光电转换装置的制造方法
公开(公告)号：US20070123005A1
公开(公告)日：2007-05-31
申请号：US11526097
申请日：2006-09-25
申请人： Yoshikazu Hiura , Hiroki Adachi , Hironobu Takahashi , Yuusuke Sugawara , Tatsuya Arao , Kazuo Nishi , Yasuyuki Arai
发明人： Yoshikazu Hiura , Hiroki Adachi , Hironobu Takahashi , Yuusuke Sugawara , Tatsuya Arao , Kazuo Nishi , Yasuyuki Arai
IPC分类号： C23C16/00 , H01L21/20 , H05H1/24
CPC分类号： H01L31/202 , C23C16/24 , C23C16/458 , C23C16/545 , H05H1/2406 , H05H2001/2431 , H05H2001/485 , Y02E10/50 , Y02P70/521
摘要： The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or between the film formation chambers, a slit provided in a portion where the substrate comes in and out in the buffer chamber, and a second transfer chamber having a roller for rewinding the substrate. The slit is provided with at least one touch roller, and the touch roller is in contact with a film formation surface of the substrate. In addition, the present invention also relates to a method for forming a film and a method for manufacturing a photoelectric conversion device that are performed by using such a film formation apparatus.
摘要翻译：成膜装置技术领域本发明涉及一种成膜装置，其特征在于，包括具有用于送出基板的辊的第一转印室，具有排出电极的成膜室，设置在转印室和成膜室之间或成膜室之间的缓冲室设置在衬底在缓冲室中进出的部分的狭缝，以及具有用于重新卷绕衬底的辊的第二传送室。狭缝设置有至少一个触摸辊，并且触摸辊与基板的成膜表面接触。此外，本发明还涉及一种用于形成膜的方法和通过使用这种成膜装置进行的光电转换装置的制造方法。

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