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1. 发明授权

US08207011B2 Method of manufacturing photoelectric conversion device 有权
标题翻译：制造光电转换装置的方法
公开(公告)号：US08207011B2
公开(公告)日：2012-06-26
申请号：US12860283
申请日：2010-08-20
申请人： Yoshikazu Hiura , Riho Kataishi , Shunpei Yamazaki
发明人： Yoshikazu Hiura , Riho Kataishi , Shunpei Yamazaki
IPC分类号： H01L21/00
CPC分类号： H01L31/1824 , C23C16/45557 , C23C16/45565 , C23C16/5096 , H01L21/02532 , H01L21/0262 , H01L31/03921 , H01L31/046 , H01L31/0463 , H01L31/0465 , H01L31/077 , Y02E10/545 , Y02P70/521
摘要： Provided is a technique for manufacturing a photoelectric conversion element using a dense crystalline semiconductor film without a cavity between crystal grains. A method of manufacturing a photoelectric conversion device having a first electrode, a unit cell, and a second electrode over a substrate includes the steps of: forming a plasma region between a first electrode and a second electrode by supplying high-frequency power of 60 MHz or less to the first electrode under a condition where a pressure of a reactive gas in a chamber of a plasma CVD apparatus is set to from 450 Pa to 13332 Pa, and a distance between the first electrode and the second electrode of the plasma CVD apparatus is set to from 1 mm to 20 mm, preferably, 4 mm to 16 mm; forming deposition precursors including a crystalline semiconductor in a gas phase including the plasma region; forming a crystal nucleus having a grain size of from 5 nm to 15 nm by depositing the deposition precursors; and forming a semiconductor film having a first conductivity type, a semiconductor film effective in photoelectric conversion, or a semiconductor film having a first conductivity type in the unit cell, by growing a crystal from the crystal nucleus.
摘要翻译：本发明提供一种使用在晶粒之间没有空腔的致密结晶半导体膜的光电转换元件的制造技术。制造在基板上具有第一电极，单元电池和第二电极的光电转换装置的方法包括以下步骤：通过提供60MHz的高频功率在第一电极和第二电极之间形成等离子体区域等离子体CVD装置的室内的反应气体的压力设定为450Pa〜13332Pa，等离子体CVD装置的第一电极和第二电极之间的距离设定为第一电极设定为1mm至20mm，优选为4mm至16mm; 在包括所述等离子体区域的气相中形成包括结晶半导体的沉积前体; 通过沉积沉积前体形成晶粒尺寸为5nm至15nm的晶核; 以及通过从晶核生长晶体，形成具有第一导电类型的半导体膜，有效于光电转换的半导体膜或具有第一导电类型的半导体膜。

2. 发明申请

US20110308582A1 PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURNING METHOD THEREOF 审中-公开
标题翻译：光电转换装置及其制造方法
公开(公告)号：US20110308582A1
公开(公告)日：2011-12-22
申请号：US13159919
申请日：2011-06-14
申请人： Riho Kataishi , Jiro Nishida , Kazutaka Kuriki
发明人： Riho Kataishi , Jiro Nishida , Kazutaka Kuriki
IPC分类号： H01L31/02 , H01L31/18
CPC分类号： H01L31/075 , H01L31/022425 , H01L31/03529 , H01L31/078 , H01L31/182 , Y02E10/546 , Y02E10/548 , Y02P70/521
摘要： A photoelectric conversion device with a novel anti-reflection structure is provided. An uneven structure is formed on a surface of a semiconductor by growth of the same or different kind of semiconductor instead of forming an anti-reflection structure by etching a surface of a semiconductor substrate or a semiconductor film. For example, a semiconductor layer including a plurality of projections is provided for a light incident plane side of the photoelectric conversion device, thereby considerably reducing surface reflection. Such a structure can be formed by a vapor deposition method; therefore, the contamination of the semiconductor is not caused.
摘要翻译：提供具有新型抗反射结构的光电转换装置。通过相同或不同种类的半导体的生长在半导体的表面上形成不均匀结构，而不是通过蚀刻半导体衬底或半导体膜的表面形成抗反射结构。例如，为光电转换装置的光入射面侧设置包括多个突起的半导体层，从而显着地减少表面反射。这种结构可以通过气相沉积法形成; 因此，不会引起半导体的污染。

3. 发明申请

US20110308589A1 PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：光电转换装置及其制造方法
公开(公告)号：US20110308589A1
公开(公告)日：2011-12-22
申请号：US13159900
申请日：2011-06-14
申请人： Riho Kataishi , Kazutaka Kuriki
发明人： Riho Kataishi , Kazutaka Kuriki
IPC分类号： H01L31/06 , H01L31/18
CPC分类号： H01L31/075 , H01L31/022425 , H01L31/03529 , H01L31/068 , H01L31/078 , H01L31/182 , Y02E10/546 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： An object of the present invention is to provide a photoelectric conversion device having a novel anti-reflection structure. An uneven structure is formed on a surface of a semiconductor by growth of the same or a different kind of semiconductor instead of forming an anti-reflection structure by etching a surface of a semiconductor substrate or a semiconductor film. For example, a semiconductor layer including a plurality of projections is provided on a light incident plane side of a photoelectric conversion device, thereby considerably reducing surface reflection. Such a structure can be formed by a vapor deposition method; therefore, the contamination of the semiconductor is not caused.
摘要翻译：本发明的目的是提供一种具有新型抗反射结构的光电转换装置。通过相同或不同种类的半导体的生长在半导体的表面上形成不均匀结构，而不是通过蚀刻半导体衬底或半导体膜的表面形成抗反射结构。例如，在光电转换装置的光入射面侧设置包括多个突起的半导体层，从而显着地减少表面反射。这种结构可以通过气相沉积法形成; 因此，不会引起半导体的污染。

4. 发明授权

US08994009B2 Photoelectric conversion device 有权
标题翻译：光电转换装置
公开(公告)号：US08994009B2
公开(公告)日：2015-03-31
申请号：US13602352
申请日：2012-09-04
申请人： Yoshinobu Asami , Riho Kataishi
发明人： Yoshinobu Asami , Riho Kataishi
IPC分类号： H01L51/00 , H01L31/0216
CPC分类号： H01L31/02167 , Y02E10/549
摘要： To provide a photoelectric conversion device which has little light loss caused by light absorption in a window layer, the photoelectric conversion device includes a first electrode, a first semiconductor layer formed over the first electrode, a second semiconductor layer formed over the first semiconductor layer, a third semiconductor layer formed over the second semiconductor layer, and a second electrode formed over the third semiconductor layer; and the first semiconductor layer is a light-transmitting semiconductor layer containing an organic compound and an inorganic compound, and the second semiconductor layer and the third semiconductor layer are each a semiconductor layer containing an organic compound.
摘要翻译：为了提供在窗口层中由光吸收引起的光损失小的光电转换装置，光电转换装置包括第一电极，形成在第一电极上的第一半导体层，形成在第一半导体层上的第二半导体层，形成在所述第二半导体层上的第三半导体层，以及形成在所述第三半导体层上的第二电极; 并且第一半导体层是含有有机化合物和无机化合物的透光性半导体层，第二半导体层和第三半导体层各自为含有有机化合物的半导体层。

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