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1. 发明授权

US4441932A Process for preparing semiconductor device having active base region implanted therein using walled emitter opening and the edge of dielectric isolation zone 失效
标题翻译：使用壁式发射器开口和电介质隔离区的边缘来制备其中注入有活性碱性区的半导体器件的方法
公开(公告)号：US4441932A
公开(公告)日：1984-04-10
申请号：US357299
申请日：1982-03-11
申请人： Yoichi Akasaka , Katsuhiro Tsukamoto
发明人： Yoichi Akasaka , Katsuhiro Tsukamoto
IPC分类号： H01L21/76 , H01L21/027 , H01L21/265 , H01L21/331 , H01L21/763 , H01L29/08 , H01L29/10 , H01L29/73 , H01L21/225 , H01L21/26
CPC分类号： H01L29/66272 , H01L21/0271 , H01L21/26513 , H01L21/2652 , H01L21/763 , H01L29/0804 , H01L29/1004
摘要： A process for preparing a semiconductor device having a walled emitter structure covering at least one side surface with a dielectric layer for separation of devices comprises a step of forming a base by implantation of ions with a resist mask for base; a step of forming an emitter by implantation of ions from an emitter-opening part; and a step of formation an active base in a base just below said emitter by implantation of ions from said emitter-opening part.
摘要翻译：一种半导体器件的制造方法，其具有覆盖至少一个侧面的具有壁状发射极结构的电介质层，用于分离器件包括通过用基底的抗蚀剂掩模注入离子形成基底的步骤; 通过从发射开口部分注入离子形成发射体的步骤; 以及通过从所述发射体开口部分注入离子，在刚好在所述发射体正下方的基底中形成活性碱的步骤。

2. 发明授权

US4797723A Stacked semiconductor device 失效
标题翻译：堆叠半导体器件
公开(公告)号：US4797723A
公开(公告)日：1989-01-10
申请号：US96212
申请日：1987-09-08
申请人： Tadashi Nishimura , Yoichi Akasaka
发明人： Tadashi Nishimura , Yoichi Akasaka
IPC分类号： H01L27/00 , H01L25/065 , H01L27/14 , H01L27/02 , H01L29/04 , H01L29/06 , H01L29/78
CPC分类号： H01L25/0657 , H01L2225/06589 , H01L2924/0002 , Y10S148/164
摘要： A stacked semiconductor device includes a first integrated circuit formed on the principal surface of a semiconductor layer and containing active elements, and a second integrated circuit formed on the first integrated circuit through an insulation layer and containing active elements. The second integrated circuit is formed on that part of the surface of the first integrated circuit which is exclusive of selected active elements, to establish an open space for heat dissipation.
摘要翻译：叠层半导体器件包括形成在半导体层的主表面上并包含有源元件的第一集成电路，以及通过绝缘层形成在第一集成电路上并包含有源元件的第二集成电路。第二集成电路形成在第一集成电路的除选择的有源元件之外的部分表面上，以建立用于散热的开放空间。

3. 发明授权

US4448632A Method of fabricating semiconductor devices 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US4448632A
公开(公告)日：1984-05-15
申请号：US380597
申请日：1982-05-21
申请人： Yoichi Akasaka
发明人： Yoichi Akasaka
IPC分类号： H01L21/20 , H01L21/205 , H01L21/263 , H01L21/268 , C30B33/00 , H01L21/428
CPC分类号： H01L21/02381 , H01L21/0242 , H01L21/02532 , H01L21/0262 , H01L21/02683 , H01L21/2636 , H01L21/268 , Y10S117/904 , Y10S117/913 , Y10S148/09 , Y10S148/093
摘要： A method of manufacturing a semiconductor device utilizing a monocrystalline silicon layer includes forming and irradiating a polycrystalline silicon layer to increase the grain size thereof, and forming an epitaxial layer thereover. Both layers are then irradiated to convert them into high quality monocrystalline silicon.
摘要翻译：制造利用单晶硅层的半导体器件的方法包括形成和照射多晶硅层以增加其晶粒尺寸，并在其上形成外延层。然后照射两层以将它们转化成高质量的单晶硅。

4. 发明授权

US07684706B2 System and method for traffic distribution in an optical network 有权
标题翻译：光网络中流量分配的系统和方法
公开(公告)号：US07684706B2
公开(公告)日：2010-03-23
申请号：US11426884
申请日：2006-06-27
申请人： Yoichi Akasaka , Martin Bouda , Takao Naito
发明人： Yoichi Akasaka , Martin Bouda , Takao Naito
IPC分类号： H04J14/00
CPC分类号： H04J14/0226 , H04J14/0227 , H04J14/0232 , H04J14/0246 , H04J14/0247 , H04J14/025 , H04J14/0252 , H04J14/0282 , H04Q11/0005 , H04Q11/0067
摘要： In accordance with the teachings of the present invention, a system and method for traffic distribution in an optical network is provided. In a particular embodiment, a traffic distribution module in a passive optical network (PON), includes a filter configured to receive downstream traffic in a first set of one or more wavelengths and a second set of one or more wavelengths from an optical line terminal (OLT), direct the traffic in the first set of wavelengths to a primary power splitter, and direct the traffic in the second set of wavelengths to a first connector. The traffic distribution module also includes a primary power splitter and a plurality of secondary power splitters. The primary power splitter is configured to receive the traffic in the first set of wavelengths and distribute the traffic in the first set to the plurality of secondary power splitters coupled to the primary power splitter such that optical network units (ONUs) in the PON receive the traffic in the first set of wavelengths. The traffic distribution module also includes a first connector configured to couple to a first module connector of a pluggable module and to forward the traffic in the second set of wavelengths to the pluggable module via the first module connector. The traffic distribution module also includes a plurality of second connectors configured to couple to a plurality of second module connectors of the pluggable module, receive the traffic in the second set of wavelengths from the pluggable module via the associated second module connectors, and forward the traffic in the second set to the plurality of secondary power splitters for distribution to particular ONUs in the PON.
摘要翻译：根据本发明的教导，提供了一种用于光网络中的业务分配的系统和方法。在特定实施例中，无源光网络（PON）中的业务分配模块包括滤波器，其被配置为从光线路终端接收一个或多个波长的第一组中的一个或多个波长的第二组， OLT），将第一组波长中的业务指向主功率分配器，并将第二组波长中的业务定向到第一连接器。交通分配模块还包括主功率分配器和多个次级功率分配器。主功率分配器被配置为以第一组波长接收业务，并将第一组中的业务分配到耦合到主功率分配器的多个次功率分配器，使得PON中的光网络单元（ONU）接收流量在第一组波长。交通分配模块还包括被配置为耦合到可插拔模块的第一模块连接器并且经由第一模块连接器将第二组波长的业务转发到可插拔模块的第一连接器。业务分配模块还包括多个第二连接器，其被配置为耦合到可插拔模块的多个第二模块连接器，经由相关联的第二模块连接器从可插拔模块接收第二组波长中的业务，并且转发流量在第二组中，多个次级功率分配器分配给PON中的特定ONU。

5. 发明申请

US20070092249A1 System and Method for Traffic Distribution in an Optical Network 有权
标题翻译：光网络中流量分配的系统与方法
公开(公告)号：US20070092249A1
公开(公告)日：2007-04-26
申请号：US11426884
申请日：2006-06-27
申请人： Yoichi Akasaka , Martin Bouda , Takao Naito
发明人： Yoichi Akasaka , Martin Bouda , Takao Naito
IPC分类号： H04J14/00
CPC分类号： H04J14/0226 , H04J14/0227 , H04J14/0232 , H04J14/0246 , H04J14/0247 , H04J14/025 , H04J14/0252 , H04J14/0282 , H04Q11/0005 , H04Q11/0067
摘要： In accordance with the teachings of the present invention, a system and method for traffic distribution in an optical network is provided. In a particular embodiment, a traffic distribution module in a passive optical network (PON), includes a filter configured to receive downstream traffic in a first set of one or more wavelengths and a second set of one or more wavelengths from an optical line terminal (OLT), direct the traffic in the first set of wavelengths to a primary power splitter, and direct the traffic in the second set of wavelengths to a first connector. The traffic distribution module also includes a primary power splitter and a plurality of secondary power splitters. The primary power splitter is configured to receive the traffic in the first set of wavelengths and distribute the traffic in the first set to the plurality of secondary power splitters coupled to the primary power splitter such that optical network units (ONUs) in the PON receive the traffic in the first set of wavelengths. The traffic distribution module also includes a first connector configured to couple to a first module connector of a pluggable module and to forward the traffic in the second set of wavelengths to the pluggable module via the first module connector. The traffic distribution module also includes a plurality of second connectors configured to couple to a plurality of second module connectors of the pluggable module, receive the traffic in the second set of wavelengths from the pluggable module via the associated second module connectors, and forward the traffic in the second set to the plurality of secondary power splitters for distribution to particular ONUs in the PON.
摘要翻译：根据本发明的教导，提供了一种用于光网络中的业务分配的系统和方法。在特定实施例中，无源光网络（PON）中的业务分配模块包括滤波器，其被配置为从光线路终端接收一个或多个波长的第一组中的一个或多个波长的第二组， OLT），将第一组波长中的业务指向主功率分配器，并将第二组波长中的业务定向到第一连接器。交通分配模块还包括主功率分配器和多个次级功率分配器。主功率分配器被配置为以第一组波长接收业务，并将第一组中的业务分配到耦合到主功率分配器的多个次功率分配器，使得PON中的光网络单元（ONU）接收流量在第一组波长。交通分配模块还包括被配置为耦合到可插拔模块的第一模块连接器并且经由第一模块连接器将第二组波长的业务转发到可插拔模块的第一连接器。业务分配模块还包括多个第二连接器，其被配置为耦合到可插拔模块的多个第二模块连接器，经由相关联的第二模块连接器从可插拔模块接收第二组波长中的业务，并且转发流量在第二组中，多个次级功率分配器分配给PON中的特定ONU。

6. 发明授权

US4948742A Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US4948742A
公开(公告)日：1990-08-14
申请号：US437778
申请日：1989-11-20
申请人： Tadashi Nishimura , Yoichi Akasaka
发明人： Tadashi Nishimura , Yoichi Akasaka
IPC分类号： H01L21/265 , H01L21/762
CPC分类号： H01L21/76243 , H01L21/26533
摘要： Oxygen ions or nitrogen ions are implanted into a semiconductor substrate to form a dielectric layer in the semiconductor substrate. An epitaxial semiconductor layer of at least 2 .mu.m in thickness, having excellent reproducibility and good crystallinity, is formed on a residual semiconductor layer on the dielectric layer by epitaxial growth, to serve as a region for forming semiconductor elements. Thus, a semiconductor device having high isolation breakdown voltage is impemented.Further, both oxygen ions and nitrogen ions are respectively implanted into a portions of a semiconductor substrate, which are adjacent to each other along the direction of thickness, to form two dielectric layers. Thus, a semiconductor device having higher isolation breakdown voltage is implemented.
摘要翻译：将氧离子或氮离子注入到半导体衬底中以在半导体衬底中形成电介质层。通过外延生长在电介质层上的残留半导体层上形成具有优异的再现性和良好的结晶度的至少2μm厚的外延半导体层，以用作半导体元件形成区域。因此，具有高隔离击穿电压的半导体器件受到影响。此外，将氧离子和氮离子分别注入到沿着厚度方向彼此相邻的半导体衬底的部分中以形成两个电介质层。因此，实现了具有更高隔离击穿电压的半导体器件。

7. 发明授权

US4899206A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4899206A
公开(公告)日：1990-02-06
申请号：US717597
申请日：1985-04-01
申请人： Hiromi Sakurai , Yoichi Akasaka
发明人： Hiromi Sakurai , Yoichi Akasaka
IPC分类号： H01L23/532
CPC分类号： H01L23/53219 , H01L2924/0002
摘要： Described is a semiconductor device comprising a metal wiring formed on a semiconductor wiring including a device or devices, wherein impurities are injected into the metal wiring by ion implantation for suppressing the whiskers that may otherwise develop during processing of the metal wiring. Shorting among the wiring layers caused by such whiskers may be suppressed and the yield rate and operational reliability of the semiconductor device may be improved.
摘要翻译：描述了一种半导体器件，其包括在包括器件的半导体布线上形成的金属布线，其中通过离子注入将杂质注入到金属布线中，以抑制在金属布线的加工期间可能会发生的晶须。可以抑制由这种晶须引起的布线层之间的短路，并且可以提高半导体器件的成品率和操作可靠性。

8. 发明授权

US4454166A Process for preparing semiconductor device 失效
标题翻译：制备半导体器件的工艺
公开(公告)号：US4454166A
公开(公告)日：1984-06-12
申请号：US455251
申请日：1983-01-03
申请人： Haruhiko Abe , Hiroshi Harada , Shigeji Kinoshita , Yoshihiro Hirata , Masahiko Denda , Yoichi Akasaka
发明人： Haruhiko Abe , Hiroshi Harada , Shigeji Kinoshita , Yoshihiro Hirata , Masahiko Denda , Yoichi Akasaka
IPC分类号： H01L21/265 , H01L21/314 , H01L21/318 , H01L21/768 , H01L21/283
CPC分类号： H01L21/76889 , H01L21/3144
摘要： A nitride film is formed on a main surface of a semiconductor substrate by plasma CVD process and an oxygen-containing layer is formed on the nitride film and an aluminum-containing film is further formed on the oxygen-containing layer.
摘要翻译：通过等离子体CVD法在半导体基板的主表面上形成氮化物膜，在氮化膜上形成含氧层，在含氧层上形成含铝膜。

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