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1. 发明授权

US06448094B2 Method of detecting etching depth 有权
标题翻译：检测蚀刻深度的方法
公开(公告)号：US06448094B2
公开(公告)日：2002-09-10
申请号：US09769307
申请日：2001-01-26
申请人： Yohei Yamazawa , Yoshihito Ookawa
发明人： Yohei Yamazawa , Yoshihito Ookawa
IPC分类号： H01L2100
CPC分类号： H01L22/26
摘要： A method of detecting an etching depth of a target object includes the steps of irradiating an etching layer of the target object that is being etched in an etching section with light having a plurality of components differing from each other in a wavelength, detecting a plurality of interference light components differing from each other in the wavelength and having an intensity periodically changed by the light components reflected from an upper surface of the etching layer and a surface of the etching section, applying a frequency analysis to these interference light components so as to obtain the frequency of each of these interference wave forms in which the intensity forms the amplitude, calculating an etching rate corresponding to each interference wave form by using the frequency of the interference wave form, and obtaining an etching depth from the etching rate.
摘要翻译：一种检测目标物体的蚀刻深度的方法包括以下步骤：在具有波长的多个成分彼此不同的光的光的照射部分中照射被蚀刻的目标物体的蚀刻层，检测多个干涉光分量在波长上彼此不同，并且具有由从蚀刻层的上表面和蚀刻部分的表面反射的光分量周期性地改变的强度，对这些干涉光分量施加频率分析，以获得通过使用干涉波形的频率计算与每个干涉波形成对应的蚀刻速率，并且从蚀刻速率获得蚀刻深度，这些干涉波形成中的每一个的频率成为强度形成振幅。

2. 发明授权

US09119282B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US09119282B2
公开(公告)日：2015-08-25
申请号：US13410487
申请日：2012-03-02
申请人： Yohei Yamazawa
发明人： Yohei Yamazawa
IPC分类号： B23K10/00 , H05H1/46
CPC分类号： H05H1/46 , H05H2001/4667 , H05H2001/4682
摘要： In an inductively coupled plasma processing apparatus, an RF antenna 54 provided on a dielectric window 52 is split into an inner coil 58, an intermediate coil 60, and an outer coil 62 in a radial direction. When traveling along each of the coils from a high frequency power supply 72 to a ground potential member via a RF power supply line 68, the RF antenna 54, and an earth line 70, a direction passing through the inner coil 58 and the outer coil 62 is a counterclockwise direction, whereas a direction passing through the intermediate coil 60 is a clockwise direction. Further, a variable intermediate capacitor 86 and a variable outer capacitor 88 are electrically connected in series with the intermediate coil 60 and the outer coil 62, respectively, between the first and second nodes NA and NB.
摘要翻译：在电感耦合等离子体处理装置中，设置在电介质窗口52上的RF天线54在径向上分成内线圈58，中间线圈60和外线圈62。当通过RF电源线68，RF天线54和接地线70沿着每个线圈从高频电源72到达地电位部件行进通过内线圈58和外线圈 62是逆时针方向，而通过中间线圈60的方向是顺时针方向。此外，可变中间电容器86和可变外部电容器88分别与第一和第二节点NA和NB之间的中间线圈60和外部线圈62串联电连接。

3. 发明授权

US08894806B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08894806B2
公开(公告)日：2014-11-25
申请号：US12732711
申请日：2010-03-26
申请人： Chishio Koshimizu , Yohei Yamazawa
发明人： Chishio Koshimizu , Yohei Yamazawa
IPC分类号： C23C16/50 , C23C16/00 , H01L21/306 , C23F1/00 , H01J37/32
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32642
摘要： A plasma processing apparatus includes a vacuum evacuable processing chamber; a lower electrode for mounting a target substrate in the processing chamber; a focus ring attached to the lower electrode to cover at least a portion of a peripheral portion of the lower electrode; an upper electrode disposed to face the lower electrode in parallel in the processing chamber; a processing gas supply unit for supplying a processing gas to a processing space; and a radio frequency (RF) power supply for outputting an RF power. Further, the plasma processing apparatus includes a plasma generating RF power supply section for supplying the RF power to a first load for generating a plasma of the processing gas; and a focus ring heating RF power supply section for supplying the RF power to a second load for heating the focus ring.
摘要翻译：等离子体处理装置包括真空排气处理室; 用于将目标衬底安装在所述处理室中的下电极; 安装在下电极上的聚焦环，以覆盖下电极的周边部分的至少一部分; 设置成在所述处理室中与所述下电极平行地面对的上电极; 处理气体供应单元，用于将处理气体供应到处理空间; 以及用于输出RF功率的射频（RF）电源。此外，等离子体处理装置包括：等离子体产生RF电源部，用于将RF功率提供给用于产生处理气体的等离子体的第一负载; 以及聚焦环加热RF电源部分，用于将RF功率提供给用于加热聚焦环的第二负载。

4. 发明授权

US08593780B2 Substrate removing method and storage medium 有权
标题翻译：基板去除方法和存储介质
公开(公告)号：US08593780B2
公开(公告)日：2013-11-26
申请号：US13434281
申请日：2012-03-29
申请人： Jun Yamawaku , Yohei Yamazawa
发明人： Jun Yamawaku , Yohei Yamazawa
IPC分类号： H01L21/683 , H01T23/00
CPC分类号： H01L21/6833
摘要： A substrate processing apparatus includes an electrostatic chuck enclosing an electrostatic electrode plate and a chamber having a ground potential and housing the electrostatic chuck. When the absolute value of the potential generated at a wafer after DC discharge is generated between the wafer and the chamber is 0.5 kV, the potential of the electrostatic electrode plate is changed from 2.5 kV to 1.5 kV to generate DC discharge so that the absolute value of the potential of a placing surface of the wafer of the electrostatic chuck becomes 0.5 kV after the plasma etching process, the polarities of the potential of the placing surface after the change and the wafer become the same, and the absolute value of the potential difference between the wafer and the chamber becomes 0.5 kV or more. The wafer is then removed from the electrostatic chuck.
摘要翻译：衬底处理设备包括一个包围静电电极板的静电吸盘和一个具有接地电位并容纳静电吸盘的室。当在晶片和室之间产生在DC放电之后的晶片产生的电位的绝对值为0.5kV时，静电电极板的电位从2.5kV变为1.5kV，以产生直流放电，使得绝对值在等离子体蚀刻处理之后，静电卡盘的晶片的放置面的电位变为0.5kV，变更后的放置面的电位的极性和晶片变得相同，并且电位差的绝对值在晶片和腔室之间变为0.5kV以上。然后将晶片从静电卡盘中取出。

5. 发明申请

US20120145324A1 PLASMA PROCESSING APPARATUS AND METHOD 有权
标题翻译：等离子体加工设备和方法
公开(公告)号：US20120145324A1
公开(公告)日：2012-06-14
申请号：US13396181
申请日：2012-02-14
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
IPC分类号： H01L21/3065
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32174 , H01J37/32348 , H01J37/3244 , H01J37/32541 , H01J37/32568 , H01J37/32642 , H01J37/32706 , H01J37/32834 , H01J2237/3344 , H01L21/02126 , H01L21/02164 , H01L21/0217 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/67069
摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.
摘要翻译：一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。被配置为施加具有相对较高频率的第一RF功率的第一RF电源连接到上电极。配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。可变直流电源连接到上电极。将处理气体供给到处理室中，同时控制来自可变直流电源到上部电极的施加电压，施加电流和施加电力中的任何一个，以产生处理气体的等离子体，以进行等离子体蚀刻。

6. 发明申请

US20120074100A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20120074100A1
公开(公告)日：2012-03-29
申请号：US13246139
申请日：2011-09-27
申请人： Yohei Yamazawa
发明人： Yohei Yamazawa
IPC分类号： C23F1/00 , C23C16/448 , H05H1/46 , C23F1/08
CPC分类号： H01J37/321 , H01J37/3211 , H01J37/32174
摘要： There is provided an inductively coupled plasma processing apparatus capable of reducing a RF power loss within a high frequency power supply unit (particularly, a matching unit) and capable of enhancing a plasma generation efficiency. In this inductively coupled plasma processing apparatus, a multiple number of closed-loop secondary circuits 96, 98 independent from each other are formed between a coaxial antenna group 54 and a transformer 68. Further, by varying electrostatic capacitances of variable capacitors 64 and 66, secondary currents I2A and I2B flowing through an inner antenna 58 and an outer antenna 60, respectively, of the coaxial antenna group 54 are independently controlled. Accordingly, it is possible to readily control a plasma density distribution on a semiconductor wafer W in a diametrical direction.
摘要翻译：提供了一种电感耦合等离子体处理装置，其能够降低高频电源单元（特别是匹配单元）内的RF功率损耗，并且能够提高等离子体产生效率。在该电感耦合等离子体处理装置中，在同轴天线组54和变压器68之间形成多个彼此独立的闭环次级电路96,98。此外，通过改变可变电容器64和66的静电电容，独立地控制分别流过同轴天线组54的内部天线58和外部天线60的二次电流I2A和I2B。因此，可以容易地控制半导体晶片W沿直径方向的等离子体密度分布。

7. 发明申请

US20110094995A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20110094995A1
公开(公告)日：2011-04-28
申请号：US12913135
申请日：2010-10-27
申请人： Yohei Yamazawa , Chishio Koshimizu , Masashi Saito , Kazuki Denpoh , Jun Yamawaku , Hachishiro Iizuka
发明人： Yohei Yamazawa , Chishio Koshimizu , Masashi Saito , Kazuki Denpoh , Jun Yamawaku , Hachishiro Iizuka
IPC分类号： C23F1/08 , C23C16/455 , C23C16/458 , C23C16/505 , C23F1/00
CPC分类号： H01J37/321 , H01L21/31116 , H01L21/31122 , H01L21/31138
摘要： A plasma processing apparatus includes: a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit, provided in the chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a processing gas to the chamber; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the chamber. The apparatus further includes a correction coil, provided at a position outside the chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution in the chamber; and an antenna-coil distance control unit for controlling a distance between the RF antenna and the correction coil while supporting the correction coil substantially in parallel with the RF antenna.
摘要翻译：一种等离子体处理装置，包括：包括电介质窗的处理室; 设置在电介质窗外部的线圈状RF天线; 基板支撑单元，设置在所述室中，用于在其上安装目标基板; 处理气体供应单元，用于将处理气体供应到所述室; 以及RF电源单元，用于向RF天线提供RF功率，以通过腔室中的感应耦合产生处理气体的等离子体。该装置还包括校正线圈，其设置在室外的位置处，其中校正线圈将通过电磁感应与RF天线耦合，用于控制腔室中的等离子体密度分布; 以及天线线圈距离控制单元，用于在支撑基本上与RF天线并联的校正线圈的同时控制RF天线和校正线圈之间的距离。

8. 发明申请

US20110094682A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20110094682A1
公开(公告)日：2011-04-28
申请号：US12913209
申请日：2010-10-27
申请人： Yohei Yamazawa , Kazuki Denpoh , Jun Yamawaku
发明人： Yohei Yamazawa , Kazuki Denpoh , Jun Yamawaku
IPC分类号： C23C16/505 , C23C16/455 , C23C16/458 , C23F1/08
CPC分类号： H01J37/3211 , C23C16/505 , H01J37/321 , H01J37/3244
摘要： A plasma processing apparatus includes a processing chamber, a part of which is formed of a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting a target substrate; a processing gas supply unit for supplying a processing gas to the processing chamber to perform a plasma process on the target substrate; an RF antenna, provided outside the dielectric window, for generating a plasma from the processing gas by an inductive coupling in the processing chamber; and an RF power supply unit for supplying an RF power to the RF antenna. The RF antenna includes a single-wound or multi-wound coil conductor having a cutout portion in a coil circling direction; and a pair of RF power lines from the RF power supply unit are respectively connected to a pair of coil end portions of the coil conductor that are opposite to each other via the cutout portion.
摘要翻译：等离子体处理装置包括处理室，其一部分由电介质窗形成; 设置在处理室中的基板支撑单元，用于安装目标基板; 处理气体供应单元，用于向处理室供应处理气体以对目标基板执行等离子体处理; 设置在电介质窗外部的RF天线，用于通过处理室中的感应耦合从处理气体产生等离子体; 以及用于向RF天线提供RF功率的RF电源单元。 RF天线包括具有线圈绕行方向的切口部的单绕线圈或多绕线圈导体，并且来自RF电源单元的一对RF电力线分别经由切口部分彼此相对地连接到线圈导体的一对线圈端部。

9. 发明申请

US20100243609A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20100243609A1
公开(公告)日：2010-09-30
申请号：US12748601
申请日：2010-03-29
申请人： Yohei Yamazawa , Naohiko Okunishi , Hironobu Misawa , Hidehito Soeta
发明人： Yohei Yamazawa , Naohiko Okunishi , Hironobu Misawa , Hidehito Soeta
IPC分类号： H01L21/3065 , H05H1/24 , C23F1/02 , H01L21/67 , C03C15/00
CPC分类号： H01J37/32623 , H01J37/32091 , H01J37/32541 , H01J37/3255 , H01J37/32697
摘要： Uniformity of plasma density distribution and process characteristics is improved by greatly improving performance and the degree of freedom for controlling the plasma density distribution. A capacitively coupled plasma processing apparatus includes a plasma density distribution controller, installed in a chamber lower room, for controlling plasma density distribution on a susceptor. The plasma density distribution controller includes a conductive plate (first conductor) which is placed under a rear surface of the susceptor at a certain position to face the susceptor and a conductive rod (second conductor) which supports the conductive plate upward and is electrically grounded. An upper end (first connecting portion) of the conductive rod is fixed to a certain portion of a bottom surface of the conductive plate, and a lower end (second connecting portion) of the conductive rod is fixed to or is in contact with a bottom wall of a chamber.
摘要翻译：通过大大提高性能和控制等离子体密度分布的自由度，提高了等离子体密度分布和工艺特性的均匀性。电容耦合等离子体处理装置包括安装在室下室中的等离子体密度分布控制器，用于控制基座上的等离子体密度分布。等离子体密度分布控制器包括导电板（第一导体），该导电板（第一导体）位于基座的后表面处于与基座相对的特定位置处;以及导电棒（第二导体），其向上支撑导电板并电接地。导电棒的上端（第一连接部）固定在导电板的底面的某一部分上，导电棒的下端（第二连接部）固定在底部一个房间的墙壁

10. 发明申请

US20090223933A1 PLASMA PROCESSING APPARATUS AND METHOD 有权
标题翻译：等离子体加工设备和方法
公开(公告)号：US20090223933A1
公开(公告)日：2009-09-10
申请号：US12465436
申请日：2009-05-13
申请人： Manabu Iwata , Chishio Koshimizu , Yohei Yamazawa
发明人： Manabu Iwata , Chishio Koshimizu , Yohei Yamazawa
IPC分类号： B44C1/22
CPC分类号： H01J37/32091 , H01J37/32183
摘要： A plasma processing apparatus for processing a substrate by using a plasma includes a processing chamber for accommodating and processing the substrate therein, a lower electrode for mounting the substrate thereon in the processing chamber, an upper electrode disposed to face the lower electrode in the processing chamber, a radio frequency power supply for supplying a radio frequency power to at least one of the lower and the upper electrode, to thereby generate the plasma between the lower and the upper electrode, and an electrical characteristic control unit for adjusting an impedance of a circuit at the side of an electrode to the plasma for a frequency of at least one radio frequency wave present in the processing chamber such that the circuit does not resonate.
摘要翻译：用于通过使用等离子体处理衬底的等离子体处理装置包括用于在其中容纳和处理衬底的处理室，用于将衬底安装在处理室中的下电极，设置成面对处理室中的下电极的上电极，用于向下电极和上电极中的至少一个提供射频电力的射频电源，从而在下电极和上电极之间产生等离子体;以及电特性控制单元，用于调节电路的阻抗在等离子体的电极的侧面处于存在于处理室中的至少一个射频的频率，使得电路不共振。

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