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1. 发明授权

US07071045B2 Process of manufacturing thin film transistor 有权
标题翻译：制造薄膜晶体管的工艺
公开(公告)号：US07071045B2
公开(公告)日：2006-07-04
申请号：US10839170
申请日：2004-05-06
申请人： Ying-Ming Wu , Yi-Tsai Hsu , Chin-Tzu Kao , Yung-Hsin Wu , Jui-chung Chang
发明人： Ying-Ming Wu , Yi-Tsai Hsu , Chin-Tzu Kao , Yung-Hsin Wu , Jui-chung Chang
IPC分类号： H01L21/336
CPC分类号： H01L27/1288 , H01L27/1214 , H01L29/66765
摘要： A process of producing a thin film transistor includes forming a gate line on a substrate by first exposure and development processes. A source electrode, a drain electrode and a semiconductor channel are formed by second exposure and development processes. An island-shaped transistor is formed by third exposure and development processes. A protection layer with a contact hole therein is formed by fourth exposure and development processes. A pixel electrode is formed by fifth exposure and development processes to connect to the contact hole.
摘要翻译：制造薄膜晶体管的工艺包括通过第一曝光和显影工艺在衬底上形成栅极线。通过第二曝光和显影处理形成源电极，漏电极和半导体沟道。通过第三曝光和显影处理形成岛状晶体管。通过第四曝光和显影处理形成其中具有接触孔的保护层。通过第五曝光和显影处理形成像素电极以连接到接触孔。

2. 发明申请

US20050250270A1 Process of manufacturing thin film transistor 有权
标题翻译：制造薄膜晶体管的工艺
公开(公告)号：US20050250270A1
公开(公告)日：2005-11-10
申请号：US10839170
申请日：2004-05-06
申请人： Ying-Ming Wu , Yi-Tsai Hsu , Chin-Tzu Kao , Yung-Hsin Wu , Jui-chung Chang
发明人： Ying-Ming Wu , Yi-Tsai Hsu , Chin-Tzu Kao , Yung-Hsin Wu , Jui-chung Chang
IPC分类号： H01L21/336 , H01L21/77 , H01L31/113
CPC分类号： H01L27/1288 , H01L27/1214 , H01L29/66765
摘要： A process of producing a thin film transistor includes forming a gate line on a substrate by first exposure and development processes. A source electrode, a drain electrode and a semiconductor channel are formed by second exposure and development processes. An island-shaped transistor is formed by third exposure and development processes. A protection layer with a contact hole therein is formed by fourth exposure and development processes. A pixel electrode is formed by fifth exposure and development processes to connect to the contact hole.
摘要翻译：制造薄膜晶体管的工艺包括通过第一曝光和显影工艺在衬底上形成栅极线。通过第二曝光和显影处理形成源电极，漏电极和半导体沟道。通过第三曝光和显影处理形成岛状晶体管。通过第四曝光和显影处理形成其中具有接触孔的保护层。通过第五曝光和显影处理形成像素电极以连接到接触孔。

3. 发明申请

US20060008952A1 FABRICATION METHOD OF THIN FILM TRANSISTOR 失效
标题翻译：薄膜晶体管的制造方法
公开(公告)号：US20060008952A1
公开(公告)日：2006-01-12
申请号：US11019074
申请日：2004-12-21
申请人： Ying-Ming Wu , Ta-Jung Su , Yi-Tsai Hsu , Chin-Tzu Kao
发明人： Ying-Ming Wu , Ta-Jung Su , Yi-Tsai Hsu , Chin-Tzu Kao
IPC分类号： H01L21/00
CPC分类号： H01L29/66765 , H01L27/12 , H01L27/124 , H01L27/1288 , H01L29/458 , H01L29/4908
摘要： A TFT fabrication method includes: forming a gate insulation layer, a semiconductor layer and a metal layer on a substrate in sequence, which cover a gate; patterning the metal layer and the semiconductor layer; forming a patterned first passivation layer on the substrate and exposing the patterned metal layer; forming a pixel electrode layer on the substrate to cover the patterned first passivation layer and the patterned metal layer; forming a patterned photoresist layer on the substrate and exposing the pixel electrode layer above the gate; etching the pixel electrode layer and the patterned metal layer to form a patterned pixel electrode layer, a source, and a drain to form a channel region on the patterned semiconductor layer; forming a second passivation layer on the substrate; and removing the patterned photoresist layer to lift off the second passivation layer, thereby exposing the patterned pixel electrode layer.
摘要翻译： TFT制造方法包括：依次在基板上形成覆盖栅极的栅极绝缘层，半导体层和金属层; 图案化金属层和半导体层; 在所述衬底上形成图案化的第一钝化层并暴露所述图案化的金属层; 在所述衬底上形成像素电极层以覆盖所述图案化的第一钝化层和所述图案化的金属层; 在衬底上形成图案化的光致抗蚀剂层，并使栅极上方的像素电极层曝光; 蚀刻像素电极层和图案化的金属层以形成图案化的像素电极层，源极和漏极，以在图案化的半导体层上形成沟道区域; 在所述衬底上形成第二钝化层; 以及去除图案化的光致抗蚀剂层以剥离第二钝化层，从而暴露图案化的像素电极层。

4. 发明授权

US07005332B2 Fabrication method of thin film transistor 失效
标题翻译：薄膜晶体管的制造方法
公开(公告)号：US07005332B2
公开(公告)日：2006-02-28
申请号：US11019074
申请日：2004-12-21
申请人： Ying-Ming Wu , Ta-Jung Su , Yi-Tsai Hsu , Chin-Tzu Kao
发明人： Ying-Ming Wu , Ta-Jung Su , Yi-Tsai Hsu , Chin-Tzu Kao
IPC分类号： H01L21/336
CPC分类号： H01L29/66765 , H01L27/12 , H01L27/124 , H01L27/1288 , H01L29/458 , H01L29/4908
摘要： A TFT fabrication method includes: forming a gate insulation layer, a semiconductor layer and a metal layer on a substrate in sequence, which cover a gate; patterning the metal layer and the semiconductor layer; forming a patterned first passivation layer on the substrate and exposing the patterned metal layer; forming a pixel electrode layer on the substrate to cover the patterned first passivation layer and the patterned metal layer; forming a patterned photoresist layer on the substrate and exposing the pixel electrode layer above the gate; etching the pixel electrode layer and the patterned metal layer to form a patterned pixel electrode layer, a source, and a drain to form a channel region on the patterned semiconductor layer; forming a second passivation layer on the substrate; and removing the patterned photoresist layer to lift off the second passivation layer, thereby exposing the patterned pixel electrode layer.
摘要翻译： TFT制造方法包括：依次在基板上形成覆盖栅极的栅极绝缘层，半导体层和金属层; 图案化金属层和半导体层; 在所述衬底上形成图案化的第一钝化层并暴露所述图案化的金属层; 在所述衬底上形成像素电极层以覆盖所述图案化的第一钝化层和所述图案化的金属层; 在衬底上形成图案化的光致抗蚀剂层，并使栅极上方的像素电极层曝光; 蚀刻像素电极层和图案化的金属层以形成图案化的像素电极层，源极和漏极，以在图案化的半导体层上形成沟道区域; 在所述衬底上形成第二钝化层; 以及去除图案化的光致抗蚀剂层以剥离第二钝化层，从而暴露图案化的像素电极层。

5. 发明申请

US20080099853A1 THIN FILM TRANSISTOR AND FABRICATION METHOD THEREOF 审中-公开
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20080099853A1
公开(公告)日：2008-05-01
申请号：US11735441
申请日：2007-04-14
申请人： Chi-Jan Yang , Hsiy-Yu Chang , Yu-Chou Lee , Ying-Ming Wu
发明人： Chi-Jan Yang , Hsiy-Yu Chang , Yu-Chou Lee , Ying-Ming Wu
IPC分类号： H01L29/76 , H01L21/00
CPC分类号： H01L29/458 , H01L29/4908 , H01L29/66765
摘要： A thin film transistor including a substrate, a first buffer layer, a gate, a gate insulation layer, a channel layer, a source and a drain is provided. The first buffer layer is disposed on the substrate and the first buffer is a silicide. The gate covers a portion of the first buffer layer, and the gate includes a first aluminum metal layer and a first protective layer disposed thereon. The gate insulation layer covers the gate, and the channel layer is disposed on part of the gate insulation layer. The source and the drain are disposed on the channel layer and separated form each other. Each of the source and the drain includes a second buffer layer, a second aluminum metal layer and a second protective layer. The second aluminum metal layer is disposed on the second buffer layer and the second protective layer is disposed thereon.
摘要翻译：提供了包括衬底，第一缓冲层，栅极，栅极绝缘层，沟道层，源极和漏极的薄膜晶体管。第一缓冲层设置在基板上，第一缓冲层是硅化物。栅极覆盖第一缓冲层的一部分，栅极包括第一铝金属层和设置在其上的第一保护层。栅极绝缘层覆盖栅极，并且沟道层设置在栅极绝缘层的一部分上。源极和漏极设置在沟道层上并彼此分离。源极和漏极中的每一个包括第二缓冲层，第二铝金属层和第二保护层。第二铝金属层设置在第二缓冲层上，第二保护层设置在其上。

6. 发明申请

US20070190430A1 Photo-mask stage 审中-公开
标题翻译：光罩舞台
公开(公告)号：US20070190430A1
公开(公告)日：2007-08-16
申请号：US11307500
申请日：2006-02-10
申请人： Heng-Chung Wu , Ying-Ming Wu
发明人： Heng-Chung Wu , Ying-Ming Wu
IPC分类号： G03F1/00 , G03B27/42
CPC分类号： G03F7/707 , G03B27/42 , H01L21/68778
摘要： A photo-mask stage of an exposure apparatus includes a fixed component to fix a first photo-mask, an exchanging component, which is able to assemble or to disassemble with the fixed component for fixing a second photo-mask.
摘要翻译：曝光装置的光掩模级包括固定第一光掩模的固定部件，能够组装或拆卸固定第二光掩模的固定部件的交换部件。

7. 发明申请

US20050001438A1 Robotic arm for preventing electrostatic damage 审中-公开
标题翻译：机器臂防止静电损伤
公开(公告)号：US20050001438A1
公开(公告)日：2005-01-06
申请号：US10772712
申请日：2004-02-05
申请人： Yu-Chou Lee , Ying-Ming Wu , Chien-Yu Chen
发明人： Yu-Chou Lee , Ying-Ming Wu , Chien-Yu Chen
IPC分类号： B25J11/00 , B65G49/06 , B65G49/07 , H01L21/677
CPC分类号： H01L21/67742 , B65G49/061
摘要： A robotic arm that has a main body and pads thereon can prevent electrostatic damage. These pads are used to carry substrates between and in processing machines. A material of these pads is the same as or similar to the material of the substrate to lower the amount of the electrostatic charges produced during the manufacturing process. Therefore, the electrostatic charges cannot damage the electronic devices on the substrate.
摘要翻译：具有主体和其上的垫的机器人手臂可以防止静电损伤。这些垫用于在处理机器之间和处理机器中携带衬底。这些焊盘的材料与衬底的材料相同或类似，以降低在制造过程中产生的静电电荷的量。因此，静电电荷不会损坏基板上的电子器件。

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