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1. 发明授权

US6118629A Magnetic head with aligned pole tips and pole layers formed of high magnetic moment material 有权
标题翻译：具有对准极尖和磁极层的磁头由高磁矩材料形成
公开(公告)号：US6118629A
公开(公告)日：2000-09-12
申请号：US332973
申请日：1999-06-15
申请人： Yiming Huai , Durga P. Ravipati , Mark D. Thomas , Carlos Corona , William D. Jensen
发明人： Yiming Huai , Durga P. Ravipati , Mark D. Thomas , Carlos Corona , William D. Jensen
IPC分类号： G11B5/31 , G11B5/147
CPC分类号： G11B5/31 , G11B5/3106 , G11B5/3116 , G11B5/313 , G11B5/3153 , G11B5/3163 , Y10T29/49043 , Y10T29/49046 , Y10T29/49052
摘要： A magnetic head includes first and second pole tip layers separated by a nonmagnetic gap layer. The pole tips are made of a high magnetic moment material. The right side walls of the first and second pole tips are vertically aligned with each other. Similarly, the left side walls of the first and second pole tips are vertically aligned with one another. The side fringing flux from one pole tip to another is substantially reduced resulting in a magnetic head capable of writing data tracks with well defined boundaries. The possibility of the pole tips operating in magnetic saturation is reduced because the pole tips, formed of high magnetic moment material, is capable of accommodating high coercive force. The magnetic head can be fabricated as an inverted head or a non-inverted head capable of writing on magnetic media with high coercivity and at a high data transfer rate.
摘要翻译：磁头包括由非磁性间隙层隔开的第一和第二极尖层。极尖由高磁矩材料制成。第一和第二极尖的右侧壁彼此垂直对准。类似地，第一和第二极尖的左侧壁彼此垂直对准。从一个极头到另一个极尖的侧边缘通量大大减小，导致能够以良好界定的边界写入数据轨道的磁头。由于由高磁矩材料形成的极尖能够容纳高的矫顽力，所以在磁饱和中操作的极尖的可能性降低。磁头可以被制造为能够以高矫顽力和高数据传输速率在磁介质上写入的倒置头或非倒置头。

2. 发明授权

US5966800A Method of making a magnetic head with aligned pole tips and pole layers formed of high magnetic moment material 失效
标题翻译：制造具有高磁矩材料形成的对准极尖和极层的磁头的方法
公开(公告)号：US5966800A
公开(公告)日：1999-10-19
申请号：US901462
申请日：1997-07-28
申请人： Yiming Huai , Durga P. Ravipati , Mark D. Thomas , Carlos Corona , William D. Jensen
发明人： Yiming Huai , Durga P. Ravipati , Mark D. Thomas , Carlos Corona , William D. Jensen
IPC分类号： G11B5/31 , G11B5/127
CPC分类号： G11B5/31 , G11B5/3106 , G11B5/3116 , G11B5/313 , G11B5/3153 , G11B5/3163 , Y10T29/49043 , Y10T29/49046 , Y10T29/49052
摘要： A method of making a magnetic head which includes first and second pole tip layers separated by a nonmagnetic gap layer includes making the pole tips of a high magnetic moment material. The right side walls of the first and second pole tips are vertically aligned with each other. Similarly, the left side walls of the first and second pole tips are vertically aligned with one another. The side fringing flux from one pole tip to another is substantially reduced resulting in a magnetic head capable of writing data tracks with well defined boundaries. The possibility of the pole tips operating in magnetic saturation is reduced because the pole tips, formed of high magnetic moment material, is capable of accommodating high coercive force. The magnetic head can be fabricated as an inverted head or a non-inverted head capable of writing on magnetic media with high coercivity and at a high data transfer rate.
摘要翻译：制造磁头的方法包括由非磁性间隙层分隔开的第一和第二极尖层，包括使高磁矩材料的极尖。第一和第二极尖的右侧壁彼此垂直对准。类似地，第一和第二极尖的左侧壁彼此垂直对准。从一个极头到另一个极尖的侧边缘通量大大减小，导致能够以良好界定的边界写入数据轨道的磁头。由于由高磁矩材料形成的极尖能够容纳高的矫顽力，所以在磁饱和中操作的极尖的可能性降低。磁头可以被制造为能够以高矫顽力和高数据传输速率在磁介质上写入的倒置头或非倒置头。

3. 发明授权

US06775902B1 Method of making a magnetic head with aligned pole tips 失效
标题翻译：制造具有对准极尖的磁头的方法
公开(公告)号：US06775902B1
公开(公告)日：2004-08-17
申请号：US09590898
申请日：2000-06-09
申请人： Yiming Huai , Durga P. Ravipati , Mark D. Thomas , Carlos Corona , William D. Jensen
发明人： Yiming Huai , Durga P. Ravipati , Mark D. Thomas , Carlos Corona , William D. Jensen
IPC分类号： G11B5127
CPC分类号： G11B5/31 , G11B5/3106 , G11B5/3116 , G11B5/313 , G11B5/3153 , G11B5/3163 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： A magnetic head is fabricated by providing a substrate with a planar surface, forming at least one cavity in the planar substrate, depositing a second yoke layer in the cavity, forming a second pole tip in the cavity in contact with the second yoke layer, patterning an inductive coil in the cavity, depositing a gap layer over the second pole tip, sputtering a first pole tip over the gap layer, etching the first and second pole tips and the gap layer to form a stack of layers, depositing a protective layer over the stack of layers, leveling the protective layer to expose the first pole tip, and patterning a first yoke layer in contact with the first pole tip.
摘要翻译：通过提供具有平坦表面的基板来制造磁头，在平面基板中形成至少一个空腔，在空腔中沉积第二磁轭层，在空腔中形成与第二磁轭层接触的第二极尖，图案化空腔中的感应线圈，在第二极尖上方沉积间隙层，在间隙层上溅射第一极尖，蚀刻第一和第二极尖和间隙层，以形成一叠层，将保护层沉积在层叠层，使保护层平整以暴露第一极尖端，以及图案化与第一极尖接触的第一磁轭层。

4. 发明申请

US20190148622A9 MEMORY SYSTEM HAVING THERMALLY STABLE PERPENDICULAR MAGNETO TUNNEL JUNCTION (MTJ) AND A METHOD OF MANUFACTURING SAME 审中-公开
公开(公告)号：US20190148622A9
公开(公告)日：2019-05-16
申请号：US13737897
申请日：2013-01-09
申请人： Yiming Huai , Yuchen Zhou , Jing Zhang , Roger Klas Malmhall , Ioan Tudosa , Rajiv Yadav Ranjan
发明人： Yiming Huai , Yuchen Zhou , Jing Zhang , Roger Klas Malmhall , Ioan Tudosa , Rajiv Yadav Ranjan
IPC分类号： H01L43/02
摘要： A spin-torque transfer magnetic random access memory (STTMRAM) element employed to store a state based on the magnetic orientation of a free layer, the STTMRAM element is made of a first perpendicular free layer (PFL) including a first perpendicular enhancement layer (PEL). The first PFL is formed on top of a seed layer. The STTMRAM element further includes a barrier layer formed on top of the first PFL and a second perpendicular reference layer (PRL) that has a second PEL, the second PRL is formed on top of the barrier layer. The STTMRAM element further includes a capping layer that is formed on top of the second PRL.

5. 发明授权

US09019758B2 Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers 有权
标题翻译：具有垂直磁各向异性多层的自旋转矩磁性随机存取存储器
公开(公告)号：US09019758B2
公开(公告)日：2015-04-28
申请号：US13225338
申请日：2011-09-02
申请人： Yiming Huai , Jing Zhang , Rajiv Yadav Ranjan , Yuchen Zhou , Roger Klas Malmhall , Ioan Tudosa
发明人： Yiming Huai , Jing Zhang , Rajiv Yadav Ranjan , Yuchen Zhou , Roger Klas Malmhall , Ioan Tudosa
IPC分类号： G11C11/15 , G11C11/16 , H01L43/08
CPC分类号： H01L43/10 , B82Y40/00 , G11C11/15 , G11C11/16 , G11C11/161 , H01F10/3286 , H01F10/329 , H01F41/302 , H01L27/228 , H01L29/66984 , H01L43/02 , H01L43/08
摘要： A spin transfer torque magnetic random access memory (STTMRAM) element includes a composite fixed layer formed on top of a substrate and a tunnel layer formed upon the fixed layer and a composite free layer formed upon the tunnel barrier layer. The magnetization direction of each of the composite free layer and fixed layer being substantially perpendicular to the plane of the substrate. The composite layers are made of multiple repeats of a bi-layer unit which consists of a non-magnetic insulating layer and magnetic layer with thicknesses adjusted in a range that makes the magnetization having a preferred direction perpendicular to film plane.
摘要翻译：自旋传递转矩磁随机存取存储器（STTMRAM）元件包括形成在衬底上的复合固定层和形成在固定层上的隧道层和形成在隧道势垒层上的复合自由层。复合自由层和固定层中的每一个的磁化方向基本上垂直于衬底的平面。复合层由双层单元的多个重复构成，该双层单元由非磁性绝缘层和厚度调节在使磁化具有与膜平面垂直的优选方向的范围内的磁性层组成。

6. 发明授权

US08830736B2 Initialization method of a perpendicular magnetic random access memory (MRAM) device with a stable reference cell 有权
标题翻译：具有稳定参考单元的垂直磁随机存取存储器（MRAM）器件的初始化方法
公开(公告)号：US08830736B2
公开(公告)日：2014-09-09
申请号：US13360553
申请日：2012-01-27
申请人： Yuchen Zhou , Yiming Huai
发明人： Yuchen Zhou , Yiming Huai
IPC分类号： G11C11/00 , G11C11/16 , G11C11/56
CPC分类号： G11C11/16 , G11C11/161 , G11C11/5607 , Y10S977/933 , Y10S977/935
摘要： A method of initializing a magnetic random access memory (MRAM) element that is configured to store a state when electric current flows therethrough is disclosed. The MRAM element includes a first magnetic tunnel junction (MTJ) for storing a data bit and a second MTJ for storing a reference bit. The direction of magnetization of the FL is determinative of the data bit stored in the at least one MTJ and each MTJ further includes a magnetic reference layer (RL) having a magnetization with a direction that is perpendicular to the film plane, and a magnetic pinned layer (PL) having a magnetization with a direction that is perpendicular to the film plane. The direction of magnetization of the RL and the PL are anti-parallel relative to each other in the first MTJ. The direction of magnetization of the FL, the RL and the PL are parallel relative to each other in the second MTJ for storing reference bit.
摘要翻译：公开了一种初始化磁性随机存取存储器（MRAM）元件的方法，该磁性随机存取存储器被配置为在电流流经时存储状态。 MRAM元件包括用于存储数据位的第一磁性隧道结（MTJ）和用于存储参考位的第二MTJ。 FL的磁化方向决定了存储在至少一个MTJ中的数据位，并且每个MTJ还包括具有与膜平面垂直的方向具有磁化的磁参考层（RL），以及磁性固定层（PL）具有与膜平面垂直的方向的磁化。在第一MTJ中，RL和PL的磁化方向相对于彼此是反平行的。在第二MTJ中，FL，RL和PL的磁化方向相对于彼此平行，用于存储参考位。

7. 发明授权

US08704206B2 Memory device including transistor array with shared plate channel and method for making the same 有权
标题翻译：存储器件包括具有共享板通道的晶体管阵列及其制造方法
公开(公告)号：US08704206B2
公开(公告)日：2014-04-22
申请号：US13356633
申请日：2012-01-23
申请人： Kimihiro Satoh , Yiming Huai , Jing Zhang
发明人： Kimihiro Satoh , Yiming Huai , Jing Zhang
IPC分类号： H01L29/06 , H01L47/00 , H01L29/78 , H01L21/336
CPC分类号： H01L45/06 , H01L27/2436 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/16
摘要： The present invention relates to memory devices incorporating therein a novel memory cell architecture which includes an array of selection transistors sharing a common channel and method for making the same. A memory device comprises a semiconductor substrate having a first type conductivity, a plurality of drain regions and a common source region separated by a common plate channel in the substrate, and a selection gate disposed on top of the plate channel with a gate dielectric layer interposed therebetween. The plurality of drain regions and the common source region have a second type conductivity opposite to the first type provided in the substrate.
摘要翻译：本发明涉及其中结合有新颖的存储单元架构的存储器件，其包括共享公共通道的选择晶体管阵列及其制造方法。存储器件包括具有第一类型导电性的半导体衬底，多个漏极区域和由衬底中的公共板沟道分开的公共源极区域，以及选择栅极，其设置在板沟道的顶部，栅极介电层插入之间。多个漏极区域和公共源极区域具有与设置在衬底中的第一类型相反的第二类型导电性。

8. 发明授权

US08565010B2 Magnetic random access memory with field compensating layer and multi-level cell 有权
标题翻译：具有场补偿层和多级单元的磁随机存取存储器
公开(公告)号：US08565010B2
公开(公告)日：2013-10-22
申请号：US13099321
申请日：2011-05-02
申请人： Yuchen Zhou , Yiming Huai , Rajiv Yadav Ranjan , Jing Zhang
发明人： Yuchen Zhou , Yiming Huai , Rajiv Yadav Ranjan , Jing Zhang
IPC分类号： G11C11/15
CPC分类号： G11C11/16 , G11C11/161 , H01L43/02
摘要： A spin toque transfer magnetic random access memory (STTMRAM) element comprises a reference layer formed on a substrate, with a fixed perpendicular magnetic component. A junction layer is formed on top of the reference layer and a free layer is formed on top of the junction layer with a perpendicular magnetic orientation, at substantially its center of the free layer and switchable. A spacer layer is formed on top of the free layer and a fixed layer is formed on top of the spacer layer, the fixed layer has a fixed perpendicular magnetic component opposite to that of the reference layer. The magnetic orientation of the free layer switches relative to that of the fixed layer. The perpendicular magnetic components of the fixed layer and the reference layer substantially cancel each other and the free layer has an in-plane edge magnetization field.
摘要翻译：自旋转矩磁性随机存取存储器（STTMRAM）元件包括形成在基板上的参考层，具有固定的垂直磁性分量。接合层形成在参考层的顶部，并且在接合层的顶部上以自由层的大致中心位置处具有垂直磁性取向形成自由层。间隔层形成在自由层的顶部，固定层形成在间隔层的顶部，固定层具有与基准层相反的固定的垂直磁性部件。自由层的磁性取向相对于固定层的磁性取向。固定层和参考层的垂直磁性分量基本相互抵消，自由层具有面内边缘磁化场。

9. 发明授权

US08492860B2 Magnetic random access memory with switching assist layer 有权
标题翻译：具有开关辅助层的磁性随机存取存储器
公开(公告)号：US08492860B2
公开(公告)日：2013-07-23
申请号：US13289372
申请日：2011-11-04
申请人： Yuchen Zhou , Yiming Huai , Jing Zhang , Rajiv Yadav Ranjan , Roger Klas Malmhall
发明人： Yuchen Zhou , Yiming Huai , Jing Zhang , Rajiv Yadav Ranjan , Roger Klas Malmhall
IPC分类号： H01L29/82
CPC分类号： H01L43/02 , G11C11/16 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L43/08 , H01L43/10
摘要： A STTMRAM element includes a magnetization layer made of a first free layer and a second free layer, separated by a non-magnetic separation layer (NMSL), with the first and second free layers each having in-plane magnetizations that act on each other through anti-parallel coupling. The direction of the magnetization of the first and second free layers each is in-plane prior to the application of electrical current to the STTMRAM element and thereafter, the direction of magnetization of the second free layer becomes substantially titled out-of-plane and the direction of magnetization of the first free layer switches. Upon electrical current being discontinued to the STTMRAM element, the direction of magnetization of the second free layer remains in a direction that is substantially opposite to that of the first free layer.
摘要翻译： STTMRAM元件包括由非磁性分离层（NMSL）隔开的由第一自由层和第二自由层制成的磁化层，第一和第二自由层各自具有彼此作用的面内磁化反平行耦合。在向STTMRAM元件施加电流之前，第一自由层和第二自由层的磁化方向各自在同一平面内，此后，第二自由层的磁化方向基本上标称为平面外，并且第一自由层开关的磁化方向。当电流停止到STTMRAM元件时，第二自由层的磁化方向保持在与第一自由层基本相反的方向上。

10. 发明申请

US20130021842A1 INITIALIZATION METHOD OF A PERPENDICULAR MAGNETIC RANDOM ACCESS MEMORY (MRAM) DEVICE WITH A STABLE REFERENCE CELL 有权
标题翻译：具有稳定参考电压的全息磁性随机存取存储器（MRAM）器件的初始化方法
公开(公告)号：US20130021842A1
公开(公告)日：2013-01-24
申请号：US13360553
申请日：2012-01-27
申请人： Yuchen Zhou , Yiming Huai
发明人： Yuchen Zhou , Yiming Huai
IPC分类号： G11C11/16
CPC分类号： G11C11/16 , G11C11/161 , G11C11/5607 , Y10S977/933 , Y10S977/935
摘要： A method of initializing a magnetic random access memory (MRAM) element that is configured to store a state when electric current flows therethrough is disclosed. The MRAM element includes a first magnetic tunnel junction (MTJ) for storing a data bit and a second MTJ for storing a reference bit. Each MTJ further includes a magnetic reference layer (RL) having a magnetization with a direction that is perpendicular to the film plane, and a magnetic pinned layer (PL) having a magnetization with a direction that is perpendicular to the film plane. The direction of magnetization of the RL and the PL are anti-parallel relative to each other in the first MTJ. The direction of magnetization of the FL, the RL and the PL are parallel relative to each other in the second MTJ for storing reference bit.
摘要翻译：公开了一种初始化磁性随机存取存储器（MRAM）元件的方法，该磁性随机存取存储器被配置为在电流流经时存储状态。 MRAM元件包括用于存储数据位的第一磁性隧道结（MTJ）和用于存储参考位的第二MTJ。每个MTJ还包括具有垂直于膜平面的方向的磁化的磁参考层（RL）和具有与膜平面垂直的方向的磁化的磁性固定层（PL）。在第一MTJ中，RL和PL的磁化方向相对于彼此是反平行的。在第二MTJ中，FL，RL和PL的磁化方向相对于彼此平行，用于存储参考位。

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