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1. 发明授权

US6001733A Method of forming a dual damascene with dummy metal lines 有权
标题翻译：用虚拟金属线形成双镶嵌的方法
公开(公告)号：US6001733A
公开(公告)日：1999-12-14
申请号：US164856
申请日：1998-10-01
申请人： Yimin Huang , Ming-Sheng Yang , Tri-Rung Yew
发明人： Yimin Huang , Ming-Sheng Yang , Tri-Rung Yew
IPC分类号： H01L21/3205 , H01L21/321 , H01L21/768 , H01L23/52 , H01L21/44
CPC分类号： H01L21/76843 , H01L21/3212 , H01L21/76808 , H01L21/76813 , H01L21/7684 , H01L2221/1031
摘要： A method for forming dual damascene is provided. First, a first inter-metal dielectric layer and a stop layer is formed on a substrate, and then a first photoresist pattern including a via hole and a dummy metal line is patterned and the stop layer is etched for forming via hole. Next, a second inter-metal dielectric layer is deposited and then a second photoresist pattern is patterned for forming metal line trench by etching. Afterwards, a glue layer and a metal layer are blanketed and the dual damascene structure is formed by chemical mechanical polishing.
摘要翻译：提供了一种形成双镶嵌的方法。首先，在基板上形成第一金属间介电层和停止层，然后对包括通孔和虚拟金属线的第一光致抗蚀剂图案进行图案化，并且对停止层进行蚀刻以形成通孔。接下来，沉积第二金属间介电层，然后对第二光致抗蚀剂图案进行图案化以通过蚀刻形成金属线沟槽。然后，胶合层和金属层被覆盖，并通过化学机械抛光形成双镶嵌结构。

2. 发明授权

US06214745B1 Method of improving surface planarity of chemical-mechanical polishing operation by forming shallow dummy pattern 失效
标题翻译：通过形成浅虚拟图案提高化学机械抛光操作的表面平面度的方法
公开(公告)号：US06214745B1
公开(公告)日：2001-04-10
申请号：US09195685
申请日：1998-11-19
申请人： Ming-Sheng Yang , Yimin Huang , Juan-Yuan Wu , Water Lur
发明人： Ming-Sheng Yang , Yimin Huang , Juan-Yuan Wu , Water Lur
IPC分类号： H01L2131
CPC分类号： H01L21/7684 , H01L21/3212
摘要： A chemical-mechanical polishing method utilizes a shallow dummy pattern for planarizing a dielectric layer. The method includes the steps of first forming a shallow dummy pattern on the dielectric layer, and then coating a patterned photoresist layer over the dielectric layer. Thereafter, the photoresist layer is used as a mask to form openings in other areas of the dielectric layer. Subsequently, the photoresist layer is removed to expose the shallow dummy pattern, and then a glue/barrier layer and a conductive layer are sequentially deposited. Next, a chemical-mechanical polishing operation is carried out to remove excess conductive layer and glue/barrier layer above the dielectric layer as well as the shallow dummy pattern at the same time. Since the removal rate of glue/barrier layer in each area above the dielectric layer is about the same, a planar substrate surface is obtained.
摘要翻译：化学机械抛光方法利用浅哑图形来平坦化介电层。该方法包括以下步骤：首先在电介质层上形成浅哑图案，然后在电介质层上涂覆图案化的光致抗蚀剂层。此后，将光致抗蚀剂层用作掩模以在电介质层的其它区域中形成开口。随后，去除光致抗蚀剂层以露出浅哑图案，然后依次沉积胶/阻挡层和导电层。接下来，进行化学机械抛光操作，以同时去除介电层上方的多余的导电层和胶/阻挡层以及浅哑图案。由于介电层上方的每个区域中胶/阻挡层的去除速率大致相同，所以获得了平坦的基板表面。

3. 发明申请

US20140264913A1 Semiconductor Device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20140264913A1
公开(公告)日：2014-09-18
申请号：US13833464
申请日：2013-03-15
申请人： Chao-Yuan Huang , Yueh-Feng Ho , Ming-Sheng Yang , Hwi-Huang Chen
发明人： Chao-Yuan Huang , Yueh-Feng Ho , Ming-Sheng Yang , Hwi-Huang Chen
IPC分类号： H01L23/48
CPC分类号： H01L23/481 , H01L23/528 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device comprises a substrate, a through-silicon via (TSV) penetrating the substrate, at least one first interconnect structure traversing the TSV from the top and dividing a region right above the TSV into several sub-regions and being configured for interconnect routing of an active device and a plurality of second interconnect structures occupying the sub-regions right above the TSV and being configured for electrically coupling the TSV to a higher-level interconnect.
摘要翻译：半导体器件包括衬底，穿透衬底的穿硅通孔（TSV），从顶部穿过TSV的至少一个第一互连结构，并将TSV正上方的区域划分成若干子区域并被配置用于互连路由有源器件和多个第二互连结构占据TSV正上方的子区域并且被配置为将TSV电耦合到较高级互连。

4. 发明授权

US08283110B2 Method for fabricating an image sensor device 有权
标题翻译：图像传感器装置的制造方法
公开(公告)号：US08283110B2
公开(公告)日：2012-10-09
申请号：US12816743
申请日：2010-06-16
申请人： Ming-Sheng Yang , Ya-Yun Yu
发明人： Ming-Sheng Yang , Ya-Yun Yu
IPC分类号： G03F7/20
CPC分类号： H01L27/14685 , H01L27/14627 , H01L27/14698
摘要： A method for fabricating an image sensor device is disclosed. The method for fabricating an image sensor device comprises forming a photosensitive layer on a substrate. The photosensitive layer is exposed through a first photomask to form an exposed portion and an unexposed portion. The unexposed portion is partially exposed through a second photomask to form a trimmed part, wherein the second photomask comprise a first segment and a second segment that has a transmittance greater than that of the first segment. The trimmed part is removed to form photosensitive structures. The photosensitive structures are reflowed to form a first microlens and a second microlens having different heights.
摘要翻译：公开了一种用于制造图像传感器装置的方法。图像传感器装置的制造方法包括在基板上形成感光层。感光层通过第一光掩模曝光以形成曝光部分和未曝光部分。未曝光部分通过第二光掩模部分曝光以形成修剪部分，其中第二光掩模包括第一光栅和第二光栅，其具有大于第一光栅的透射率。去除修剪的部分以形成光敏结构。光敏结构被回流以形成具有不同高度的第一微透镜和第二微透镜。

5. 发明申请

US20070076339A1 AIR GAP FOR TUNGSTEN/ALUMINUM PLUG APPLICATIONS 审中-公开
标题翻译：用于TUNGSTEN /铝插头应用的空气隙
公开(公告)号：US20070076339A1
公开(公告)日：2007-04-05
申请号：US11561790
申请日：2006-11-20
申请人： Water Lur , David Lee , Kuang-Chih Wang , Ming-Sheng Yang
发明人： Water Lur , David Lee , Kuang-Chih Wang , Ming-Sheng Yang
IPC分类号： H02H9/00
CPC分类号： H01L21/7682 , H01L21/76807
摘要： An air gap structure substantially reduces undesired capacitance between adjacent interconnects, metal lines or other features in an integrated circuit device. The air gap extends above, and may also additionally extend below, the interconnects desired to be isolated thus minimizing fringing fields between the lines. The integrated air gap structure can be utilized in conjunction with a tungsten plug process. Also, multiple levels of the integrated air gap structure can be fabricated to accommodate multiple metal levels while always ensuring that physical dielectric layer support is provided to the device structure underlying the interconnects.
摘要翻译：气隙结构基本上减少了集成电路器件中相邻互连，金属线或其他特征之间的不需要的电容。空气间隙在期望被隔离的互连之上延伸并且还可以另外延伸，从而最小化线之间的边缘场。集成气隙结构可以与钨丝塞过程一起使用。此外，可以制造多个级别的集成气隙结构以适应多个金属水平，同时始终确保将物理介电层支撑件提供给互连下面的器件结构。

6. 发明授权

US06790742B2 Chemical mechanical polishing in forming semiconductor device 有权
标题翻译：化学机械抛光成型半导体器件
公开(公告)号：US06790742B2
公开(公告)日：2004-09-14
申请号：US10293243
申请日：2002-11-13
申请人： Ming-Sheng Yang , Juan-Yuan Wu , Water Lur
发明人： Ming-Sheng Yang , Juan-Yuan Wu , Water Lur
IPC分类号： H01L2176
CPC分类号： H01L21/76229
摘要： A method of chemical-mechanical polishing for forming a shallow trench isolation is disclosed. A substrate having a number of active regions, including a number of relatively large active regions and a number of relative small active regions, is provided. The method comprises the following steps. A silicon nitride layer on the substrate is formed. A number of shallow trenches are formed between the active regions one or more of which may constitute an alignment mark. An oxide layer is formed over the substrate, so that the shallow trenches are filled with the oxide layer. A partial reverse active mask is formed on the oxide layer. The partial reverse active mask exposes a portion of the oxide layer over the large active area and over the alignment mark. The oxide layer of each large active region and the alignment mark is removed. The partial reverse active mask is removed. The oxide layer is planarized.
摘要翻译：公开了用于形成浅沟槽隔离的化学机械抛光的方法。提供了具有多个有效区域的基板，包括多个相对较大的有源区域和多个相对小的有源区域。该方法包括以下步骤。形成衬底上的氮化硅层。在有源区域之间形成多个浅沟槽，其中一个或多个可以构成对准标记。在衬底上形成氧化物层，使得浅沟槽被氧化物层填充。在氧化物层上形成部分反向有源掩模。部分反向有源掩模将氧化物层的一部分暴露在大的有效区域上方和对准标记之上。去除每个大活性区域的氧化物层和对准标记。去除部分反向主动掩模。氧化层平坦化。

7. 发明授权

US06616510B2 Chemical mechanical polishing method for copper 有权
公开(公告)号：US06616510B2
公开(公告)日：2003-09-09
申请号：US09735323
申请日：2000-12-12
申请人： Chia-Lin Hsu , Teng-Chun Tsai , Yung-Tsung Wei , Ming-Sheng Yang
发明人： Chia-Lin Hsu , Teng-Chun Tsai , Yung-Tsung Wei , Ming-Sheng Yang
IPC分类号： H01L21465
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/02
摘要： A chemical-mechanical polishing method for polishing a copper oxide layer and a copper layer. The copper oxide layer above the copper layer is first polished using an aqueous solution having a high concentration of polishing particles/chelating agent. The copper layer is then polished using a polishing slurry having a low concentration of polishing particles/chelating agent or the polishing slurry free of polishing particles/chelating agent. Alternatively, the copper oxide layer is polished using a mixture of the aqueous solution and the polishing slurry. After the copper oxide layer is removed, the copper layer is polished using the polishing slurry alone.

8. 发明授权

US06440861B1 Method of forming dual damascene structure 有权
标题翻译：形成双镶嵌结构的方法
公开(公告)号：US06440861B1
公开(公告)日：2002-08-27
申请号：US09652471
申请日：2000-08-31
申请人： Chih-Chien Liu , Jui-Tsen Huang , Yi-Fang Cheng , Ming-Sheng Yang
发明人： Chih-Chien Liu , Jui-Tsen Huang , Yi-Fang Cheng , Ming-Sheng Yang
IPC分类号： H01L21302
CPC分类号： H01L21/76835 , H01L21/76808 , H01L2221/1063
摘要： A method of forming a dual damascene structure. A first dielectric layer and a second dielectric layer are sequentially formed over a substrate. A first photoresist layer is formed over the second dielectric layer. Photolithographic and etching operations are conducted to remove a portion of the second dielectric layer and the first dielectric layer so that a via opening is formed. A conformal third dielectric layer is coated over the surface of the second dielectric layer and the interior surface of the via opening. The conformal third dielectric layer forms a liner dielectric layer. A second photoresist layer is formed over the second dielectric layer and then the second photoresist layer is patterned. Using the patterned second photoresist layer as a mask, a portion of the second dielectric layer is removed to form a trench. The patterned second photoresist layer is removed. Conductive material is deposited over the substrate to fill the via opening and the trench. Finally, chemical-mechanical polishing is conducted to remove excess conductive material above the second dielectric layer.
摘要翻译：形成双镶嵌结构的方法。第一电介质层和第二电介质层依次形成在衬底上。在第二介电层上形成第一光致抗蚀剂层。进行光刻和蚀刻操作以去除第二介电层和第一介电层的一部分，从而形成通孔。保形第三电介质层涂覆在第二电介质层的表面和通孔开口的内表面上。保形第三电介质层形成衬里电介质层。在第二电介质层上形成第二光致抗蚀剂层，然后对第二光致抗蚀剂层进行图案化。使用图案化的第二光致抗蚀剂层作为掩模，去除第二介电层的一部分以形成沟槽。去除图案化的第二光致抗蚀剂层。导电材料沉积在衬底上以填充通孔和沟槽。最后，进行化学机械抛光以除去第二介电层上方的多余的导电材料。

9. 发明授权

US06380069B1 Method of removing micro-scratch on metal layer 有权
标题翻译：去除金属层上的微划痕的方法
公开(公告)号：US06380069B1
公开(公告)日：2002-04-30
申请号：US09483581
申请日：2000-01-14
申请人： Hsueh-Chung Chen , Yung-Tsung Wei , Ming-Sheng Yang
发明人： Hsueh-Chung Chen , Yung-Tsung Wei , Ming-Sheng Yang
IPC分类号： H01L214763
CPC分类号： H01L21/7684
摘要： A method of removing the micro-scratches on a metal layer is described, wherein the metal layer is formed on a barrier layer conformally onto a dielectric layer having a hole thereon, and wherein the metal layer over-fills the hole. The method comprises three chemical-mechanical polishing steps as described hereinbelow. The first chemical-mechanical polishing step is that oxidizing and polishing away the metal layer outside the hole, with a first slurry, wherein the first slurry has a chemical solution and has a plurality of abrasive particles. The second chemical-mechanical polishing step is that polishing away the barrier layer outside the hole, with a second slurry, whereby a plurality of micro-scratches are formed on the metal layer after the barrier layer is chemical-mechanically polished. The third chemical-mechanical polishing step is that buffing the metal layer, with the first slurry, thereby removing the micro-scratches on the metal layer.
摘要翻译：描述了去除金属层上的微划痕的方法，其中金属层在阻挡层上保形地形成在其上具有孔的电介质层上，并且其中金属层过满填充孔。该方法包括如下所述的三个化学 - 机械抛光步骤。第一化学机械抛光步骤是利用第一浆料氧化和抛光孔外的金属层，其中第一浆料具有化学溶液并具有多个研磨颗粒。第二化学机械抛光步骤是利用第二浆料抛光孔外的阻挡层，由此在阻挡层被化学机械抛光之后在金属层上形成多个微划痕。第三化学机械抛光步骤是用第一浆料抛光金属层，从而去除金属层上的微划痕。

10. 发明授权

US06280079B1 Method of mixing slurries 有权
标题翻译：混合浆料的方法
公开(公告)号：US06280079B1
公开(公告)日：2001-08-28
申请号：US09220535
申请日：1998-12-24
申请人： Ming-Sheng Yang , Peng-Yih Peng , Chia-Jui Chang , Juan-Yuan Wu
发明人： Ming-Sheng Yang , Peng-Yih Peng , Chia-Jui Chang , Juan-Yuan Wu
IPC分类号： B01F500
CPC分类号： B24B37/04 , B01F7/00916 , B24B57/02
摘要： A slurry mixing apparatus has a mixing chamber, a rotatable bearing and several blades. The bearing is connected to one end of each of the blades and located in the center of the mixing chamber. Several kinds of the slurries can be mixed rapidly in the apparatus and flowed into the CMP polisher immediately to perform a CMP process. Being mixed by the mixing chamber, the slurry is supplied to the chemical mechanical polisher for polishing.
摘要翻译：浆料混合装置具有混合室，可旋转轴承和多个叶片。轴承连接到每个叶片的一端并且位于混合室的中心。几种浆料可以在设备中快速混合，并立即流入CMP抛光机，以执行CMP工艺。通过混合室混合，将浆料供给到化学机械抛光机进行抛光。

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