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1. 发明授权

US07394123B2 Magnetic random access memory array with thin conduction electrical read and write lines 失效
标题翻译：磁性随机存取存储阵列，具有薄导通电读和写线
公开(公告)号：US07394123B2
公开(公告)日：2008-07-01
申请号：US11438179
申请日：2006-05-22
申请人： Tai Min , Pokang Wang , Xizeng Shi , Yimin Guo
发明人： Tai Min , Pokang Wang , Xizeng Shi , Yimin Guo
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： G11C11/1657 , G11C11/161 , G11C11/1659
摘要： An MTJ MRAM cell is formed between ultra-thin orthogonal word and bit lines of high conductivity material whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. Because the lines require thinner depositions, there is no necessity of removing material by CMP during patterning and polishing. Therefore, there is a uniform spacing between the lines and the cell free layer.
摘要翻译：在厚度小于100nm的高导电性材料的超薄正交字和位线之间形成MTJ MRAM单元。该厚度的线产生在无电荷层处的开关磁场，对于给定电流，其增强约两倍。因为这些线需要更薄的沉积，所以在图案化和抛光期间不需要通过CMP去除材料。因此，线和无细胞层之间存在均匀的间隔。

2. 发明申请

US20060014306A1 Magnetic random access memory array with thin conduction electrical read and write lines 失效
标题翻译：磁性随机存取存储阵列，具有薄导通电读和写线
公开(公告)号：US20060014306A1
公开(公告)日：2006-01-19
申请号：US10892668
申请日：2004-07-16
申请人： Tai Min , Pokang Wang , Xizeng Shi , Yimin Guo
发明人： Tai Min , Pokang Wang , Xizeng Shi , Yimin Guo
IPC分类号： H01L21/00
CPC分类号： G11C11/1657 , G11C11/161 , G11C11/1659
摘要： An MTJ MRAM cell is formed between ultra-thin orthogonal word and bit lines of high conductivity material whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. The fabrication of a cell with such thin lines is actually simplified as a result of the thinner depositions because the fabrication process eliminates the necessity of removing material by CMP during patterning and polishing, thereby producing uniform spacing between the lines and the cell free layer.
摘要翻译：在厚度小于100nm的高导电性材料的超薄正交字和位线之间形成MTJ MRAM单元。该厚度的线产生在无电荷层处的开关磁场，对于给定电流，其增强约两倍。由于制造工艺消除了在图案化和抛光期间通过CMP去除材料的必要性，因此在线和无细胞层之间产生均匀的间隔，因此由于较薄的沉积，实际上简化了具有这种细线的电池的制造。

3. 发明申请

US20050280960A1 Magnetic random access memory array with coupled soft adjacent magnetic layer 失效
公开(公告)号：US20050280960A1
公开(公告)日：2005-12-22
申请号：US11210637
申请日：2005-08-25
申请人： Yimin Guo , Tai Min , Pokang Wang , Xizeng Shi
发明人： Yimin Guo , Tai Min , Pokang Wang , Xizeng Shi
IPC分类号： A61K31/404 , C07D209/08 , G11C11/16 , H01L27/22 , H01L43/08 , G11B5/127
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1675
摘要： An MTJ element is formed between orthogonal word and bit lines. The bit line is a composite line which includes a high conductivity layer and a soft magnetic layer under the high conductivity layer. During operation, the soft magnetic layer concentrates the magnetic field of the current and, due to its proximity to the free layer, it magnetically couples with the free layer in the MTJ. This coupling provides thermal stability to the free layer magnetization and ease of switching and the coupling may be further enhanced by inducing a shape or crystalline anisotropy into the free layer during formation.

4. 发明申请

US20060211155A1 Magnetic random access memory array with thin conduction electrical read and write lines 失效
标题翻译：磁性随机存取存储阵列，具有薄导通电读和写线
公开(公告)号：US20060211155A1
公开(公告)日：2006-09-21
申请号：US11438179
申请日：2006-05-22
申请人： Tai Min , Pokang Wang , Xizeng Shi , Yimin Guo
发明人： Tai Min , Pokang Wang , Xizeng Shi , Yimin Guo
IPC分类号： H01L21/00
CPC分类号： G11C11/1657 , G11C11/161 , G11C11/1659
摘要： An MTJ MRAM cell is formed between ultra-thin orthogonal word and bit lines of high conductivity material whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. Because the lines require thinner depositions, there is no necessity of removing material by CMP during patterning and polishing. Therefore, there is a uniform spacing between the lines and the cell free layer.
摘要翻译：在厚度小于100nm的高导电性材料的超薄正交字和位线之间形成MTJ MRAM单元。该厚度的线产生在无电荷层处的开关磁场，对于给定电流，其增强约两倍。因为这些线需要更薄的沉积，所以在图案化和抛光期间不需要通过CMP去除材料。因此，线和无细胞层之间存在均匀的间隔。

5. 发明授权

US07067330B2 Magnetic random access memory array with thin conduction electrical read and write lines 失效
公开(公告)号：US07067330B2
公开(公告)日：2006-06-27
申请号：US10892668
申请日：2004-07-16
申请人： Tai Min , Pokang Wang , Xizeng Shi , Yimin Guo
发明人： Tai Min , Pokang Wang , Xizeng Shi , Yimin Guo
IPC分类号： H01L21/00
CPC分类号： G11C11/1657 , G11C11/161 , G11C11/1659
摘要： An MTJ MRAM cell is formed between ultra-thin orthogonal word and bit lines of high conductivity material whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. The fabrication of a cell with such thin lines is actually simplified as a result of the thinner depositions because the fabrication process eliminates the necessity of removing material by CMP during patterning and polishing, thereby producing uniform spacing between the lines and the cell free layer.

6. 发明申请

US20060014346A1 Magnetic random access memory array with thin conduction electrical read and write lines 失效
标题翻译：磁性随机存取存储阵列，具有薄导通电读和写线
公开(公告)号：US20060014346A1
公开(公告)日：2006-01-19
申请号：US11001382
申请日：2004-12-01
申请人： Tai Min , Pokang Wang , Xizeng Shi , Yimin Guo
发明人： Tai Min , Pokang Wang , Xizeng Shi , Yimin Guo
IPC分类号： H01L21/336
CPC分类号： G11C11/1657 , G11C11/161 , G11C11/1659
摘要： An MTJ MRAM cell is formed between or below an intersection of ultra-thin orthogonal word and bit lines of high conductivity material whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. The fabrication of a cell with such thin lines is actually simplified as a result of the thinner depositions because the fabrication process eliminates the necessity of removing material by CMP during patterning and polishing, thereby producing uniform spacing between the lines and the cell free layer.
摘要翻译：在厚度小于100nm的高导电性材料的超薄正交字和位线的交点之间或之下形成MTJ MRAM单元。该厚度的线产生在无电荷层处的开关磁场，对于给定电流，其增强约两倍。由于制造工艺消除了在图案化和抛光期间通过CMP去除材料的必要性，因此在线和无细胞层之间产生均匀的间隔，因此由于较薄的沉积，实际上简化了具有这种细线的电池的制造。

7. 发明授权

US07394122B2 Magnetic random access memory array with thin conduction electrical read and write lines 失效
标题翻译：磁性随机存取存储阵列，具有薄导通电读和写线
公开(公告)号：US07394122B2
公开(公告)日：2008-07-01
申请号：US11001382
申请日：2004-12-01
申请人： Tai Min , Pokang Wang , Xizeng Shi , Yimin Guo
发明人： Tai Min , Pokang Wang , Xizeng Shi , Yimin Guo
IPC分类号： H01L29/76 , H01L43/00
CPC分类号： G11C11/1657 , G11C11/161 , G11C11/1659
摘要： An MTJ MRAM cell is formed between or below an intersection of ultra-thin orthogonal word and bit lines of high conductivity material whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. The fabrication of a cell with such thin lines is actually simplified as a result of the thinner depositions because the fabrication process eliminates the necessity of removing material by CMP during patterning and polishing, thereby producing uniform spacing between the lines and the cell free layer.
摘要翻译：在厚度小于100nm的高导电性材料的超薄正交字和位线的交点之间或之下形成MTJ MRAM单元。该厚度的线产生在无电荷层处的开关磁场，对于给定电流，其增强约两倍。由于制造工艺消除了在图案化和抛光期间通过CMP去除材料的必要性，因此在线和无细胞层之间产生均匀的间隔，因此由于较薄的沉积，实际上简化了具有这种细线的电池的制造。

8. 发明授权

US07443707B2 Magnetic random access memory array with free layer locking mechanism and method of its use 失效
标题翻译：磁性随机存取存储阵列具有自由层锁定机制及其使用方法
公开(公告)号：US07443707B2
公开(公告)日：2008-10-28
申请号：US11732073
申请日：2007-04-02
申请人： Yimin Guo , Po-Kang Wang , Xizeng Shi , Tai Min
发明人： Yimin Guo , Po-Kang Wang , Xizeng Shi , Tai Min
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A method of using an MTJ MRAM cell element having two magnetization states of greater and lesser stability. During switching, the free layer is first placed in the less stable state by a word line current, so that a small bit line current can switch its magnetization direction. After switching, the state reverts to its more stable form as a result of magnetostatic interaction with a SAL (soft adjacent layer), which is a layer of soft magnetic material formed on an adjacent current carrying line, which prevents it from being accidentally rewritten when it is not actually selected and also provides stability against thermal agitation.
摘要翻译：一种使用具有较高和较小稳定性的两种磁化状态的MTJ MRAM单元元件的方法。在切换期间，自由层首先通过字线电流处于较不稳定的状态，使得小的位线电流可以切换其磁化方向。在切换之后，由于与在相邻的载流线上形成的软磁材料层的SAL（软相邻层）的静磁相互作用的结果，状态恢复到更稳定的形式，这防止了在相邻的载流线上形成的软磁材料层它实际上并没有被选中，也提供了抗热搅拌的稳定性。

9. 发明申请

US20070184561A1 Magnetic random access memory array with free layer locking mechanism and method of its use 失效
标题翻译：磁性随机存取存储阵列具有自由层锁定机制及其使用方法
公开(公告)号：US20070184561A1
公开(公告)日：2007-08-09
申请号：US11732073
申请日：2007-04-02
申请人： Yimin Guo , Po-Kang Wang , Xizeng Shi , Tai Min
发明人： Yimin Guo , Po-Kang Wang , Xizeng Shi , Tai Min
IPC分类号： H01L21/00
CPC分类号： G11C11/16
摘要： A method of using an MTJ MRAM cell element having two magnetization states of greater and lesser stability. During switching, the free layer is first placed in the less stable state by a word line current, so that a small bit line current can switch its magnetization direction. After switching, the state reverts to its more stable form as a result of magnetostatic interaction with a SAL (soft adjacent layer), which is a layer of soft magnetic material formed on an adjacent current carrying line, which prevents it from being accidentally rewritten when it is not actually selected and also provides stability against thermal agitation.
摘要翻译：一种使用具有较高和较小稳定性的两种磁化状态的MTJ MRAM单元元件的方法。在切换期间，自由层首先通过字线电流处于较不稳定的状态，使得小的位线电流可以切换其磁化方向。在切换之后，由于与在相邻的载流线上形成的软磁材料层的SAL（软相邻层）的静磁相互作用的结果，状态恢复到更稳定的形式，这防止了在相邻的载流线上形成的软磁材料层它实际上并没有被选中，也提供了抗热搅拌的稳定性。

10. 发明申请

US20050219895A1 Magnetic random access memory array with free layer locking mechanism 失效
标题翻译：磁性随机存取存储阵列具有自由层锁定机制
公开(公告)号：US20050219895A1
公开(公告)日：2005-10-06
申请号：US10818581
申请日：2004-04-06
申请人： Yimin Guo , Po-Kang Wang , Xizeng Shi , Tai Min
发明人： Yimin Guo , Po-Kang Wang , Xizeng Shi , Tai Min
IPC分类号： H01L27/105 , G11C11/16 , H01L21/8246 , H01L43/08 , G11C11/00 , G11C11/15
CPC分类号： G11C11/16
摘要： An MTJ MRAM cell element, whose free layer has a shape induced magnetic anisotropy, is formed between orthogonal word and bit lines. The bit line is a composite line which includes a high conductivity current carrying layer and a soft adjacent magnetic layer (SAL). During operation, the soft magnetic layer concentrates the magnetic field of the current and, due to its proximity to the free layer, it magnetically couples with the free layer to produce two magnetization states of greater and lesser stability. During switching, the layer is first placed in the less stable state by a word line current, so that a small bit line current can switch its magnetization direction. After switching, the state reverts to its more stable form as a result of magnetostatic interaction with the SAL, which prevents it from being accidentally rewritten when it is not actually selected and also provides stability against thermal agitation.
摘要翻译：在正交字和位线之间形成MTJ MRAM单元元件，其自由层具有诱导磁各向异性的形状。位线是包括高导电性载流层和软相邻磁性层（SAL）的复合线。在操作期间，软磁层集中了电流的磁场，并且由于其接近于自由层，其与自由层磁耦合以产生更大和更小稳定性的两种磁化状态。在切换期间，该层首先通过字线电流处于较不稳定的状态，使得小的位线电流可以切换其磁化方向。在切换之后，由于与SAL的静磁相互作用，状态恢复到更稳定的形式，这防止了当它不被实际选择时被意外重写，并且还提供了抗热搅动的稳定性。

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