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    • 7. 发明授权
    • Photovoltaic device
    • 光伏装置
    • US06184456B2
    • 2001-02-06
    • US08985312
    • 1997-12-04
    • Jinsho MatsuyamaKoichi Matsuda
    • Jinsho MatsuyamaKoichi Matsuda
    • H01L3100
    • H01L31/0368H01L31/056Y02E10/52
    • A photovoltaic device of the present invention has a non-single-crystal semiconductor. A layer underlying the non-single-crystal semiconductor has a polycrystalline structure. Individual grains of the polycrystal exposed in the surface of the underlying layer have smooth surfaces. The surface of the underlying layer has a step along the grain boundaries of the polycrystal, or a protrusion or recess at the grain boundaries. Alternatively, polycrystal grains having rough surfaces and polycrystal grains having smooth surfaces commonly exist in the surface of the polycrystalline layer. The polycrystalline layer may be a substrate of the photovoltaic device. The present invention, by virtue of the use of such a polycrystalline layer, provides a highly reliable and efficient thin-film photovoltaic device which enhances light absorption by the semiconductor layer and which can be produced at a high yield even at a practically adoptable low cost, while eliminating deficiencies of known arts in regard to workability, yield and durability.
    • 本发明的光电器件具有非单晶半导体。 非单晶半导体的下面的层具有多晶结构。 暴露在下层的表面的多晶体的单个晶粒具有平滑的表面。 下层的表面沿着多晶体的晶界或在晶界处的突起或凹陷具有台阶。 或者,具有粗糙表面的多晶粒和具有平滑表面的多晶粒通常存在于多晶层的表面中。 多晶层可以是光伏器件的衬底。 本发明通过使用这种多晶层,提供了高度可靠且高效的薄膜光伏器件,其增强了半导体层的光吸收,并且即使在实际可采用的低成本下也可以以高产率生产 同时消除已知艺术在可加工性,产量和耐久性方面的缺陷。
    • 8. 发明授权
    • Microwave plasma chemical vapor deposition process using a microwave
window and movable, dielectric sheet
    • 微波等离子体化学气相沉积工艺使用微波窗和可动电介质片
    • US5637358A
    • 1997-06-10
    • US376652
    • 1995-01-20
    • Hirokazu OtoshiKeishi SaitohRyuji OkamuraKoichi Matsuda
    • Hirokazu OtoshiKeishi SaitohRyuji OkamuraKoichi Matsuda
    • C23C16/50C23C16/511H01J37/32C23C16/00
    • C23C16/511H01J37/32238H01J37/32495
    • In a microwave plasma chemical vapor deposition apparatus for forming a functional deposited film on a substrate which comprises a substantially enclosed film-forming chamber comprising a circumferential wall having an end portion thereof hermetically provided with a microwave introducing window to which a waveguide extending from a microwave power source is connected, said film-forming chamber having a discharge space for causing plasma discharge of resulting in forming a deposited film on a substrate, said substrate being positioned on a substrate holder arranged in said film-forming chamber and said film-forming chamber being provided with means for supplying a film-forming raw material gas into said discharge space and means for evacuating said film-forming chamber, the improvement which comprises a dielectric sheet being movably placed on the surface of said microwave introducing window situated in said film-forming chamber in a state that said dielectric sheet is face to face contacted with said surface of the microwave introducing window.
    • 在用于在基板上形成功能沉积膜的微波等离子体化学气相沉积设备中,该微波等离子体化学气相沉积设备包括一个基本上封闭的成膜室,该室具有一个圆周壁,该圆周壁的端部气密地设置有一个微波引入窗口, 电源连接,所述成膜室具有用于引起等离子体放电的放电空间,导致在基板上形成沉积膜,所述基板位于布置在所述成膜室中的基板保持器和所述成膜室 设置有用于将成膜原料气体供应到所述放电空间的装置和用于抽出所述成膜室的装置,其改进包括可移动地放置在位于所述膜形成室中的所述微波引入窗口的表面上的电介质片, 形成室,其处于所述电介质片面对面的状态 与微波引入窗口的所述表面发生反应。