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    • 7. 发明申请
    • MOUNTING STAGE AND PLASMA PROCESSING APPARATUS
    • 安装阶段和等离子体加工设备
    • US20090199967A1
    • 2009-08-13
    • US12365385
    • 2009-02-04
    • Shinji HimoriYasuharu SasakiMasakazu Higuma
    • Shinji HimoriYasuharu SasakiMasakazu Higuma
    • C23F1/08
    • H01L21/6833H01J37/20H01J37/32091H01J2237/0209H02N13/00
    • A mounting stage for a plasma processing apparatus that can prevent degradation of an insulating film in a semiconductor device on a substrate. A conductor member is connected to a radio-frequency power source for producing plasma. A dielectric layer is buried in a central portion of an upper surface of the conductor member. An electrostatic chuck is mounted on the dielectric layer. The electrostatic chuck has an electrode film that satisfies the following condition: δ/z≧85 where δ=(ρv/(μπf))1/2 where z is the thickness of the electrode film, δ is the skin depth of the electrode film with respect to radio-frequency electrical power supplied from the radio-frequency power source, f is the frequency of the radio-frequency electrical power, π is the ratio of a circumference of a circle to its diameter, μ is the magnetic permeability of the electrode film, and ρv is the specific resistance of the electrode film.
    • 一种等离子体处理装置的安装平台,其能够防止基板上的半导体装置中的绝缘膜的劣化。 导体构件连接到用于产生等离子体的射频电源。 电介质层埋在导体部件的上表面的中心部分。 静电卡盘安装在电介质层上。 静电吸盘具有满足以下条件的电极膜:<?in-line-formula description =“In-line formula”end =“lead”?> delta / z> = 85 <?in-line-formula description = “直线公式”end =“tail”?>其中delta =(rhov /(mupif))1/2其中z是电极膜的厚度,delta是电极膜相对于放射线的厚度, f是射频电力的频率,pi是圆周长与其直径的比率,μ是电极膜的导磁率,rhov 是电极膜的电阻率。
    • 8. 发明申请
    • SURFACE TREATMENT METHOD
    • 表面处理方法
    • US20080280536A1
    • 2008-11-13
    • US11687879
    • 2007-03-19
    • Yasuharu SasakiMasakazu HigumaTadashi AotoEiichiro Kikuchi
    • Yasuharu SasakiMasakazu HigumaTadashi AotoEiichiro Kikuchi
    • B24B1/00
    • B24B1/00B24B21/04
    • A surface treatment method that enables a surface of an electrostatic chuck to be smoothed, so as to improve the efficiency of heat transfer between the surface of the electrostatic chuck and a substrate. The electrostatic chuck is provided in an upper portion of a susceptor provided in a chamber of a substrate processing apparatus. In the surface treatment of the electrostatic chuck, a sprayed coating film is formed on the surface of the electrostatic chuck, next the surface of the electrostatic chuck is ground by bringing into contact therewith a grindstone, then the surface of the electrostatic chuck is ground flat by bringing into contact therewith a lapping plate onto a surface of which is sprayed a suspension, and then the surface of the electrostatic chuck is ground smooth by bringing into contact therewith a tape of a tape lapping apparatus.
    • 能够平滑静电卡盘的表面的表面处理方法,以提高静电卡盘的表面与基板之间的热传递效率。 静电吸盘设置在设置在基板处理装置的室中的基座的上部。 在静电卡盘的表面处理中,在静电卡盘的表面上形成喷涂膜,然后通过与磨石接触来研磨静电卡盘的表面,然后将静电卡盘的表面磨平 通过与其接触的研磨板在其表面上喷涂悬浮液,然后通过与胶带研磨装置的带接触,将静电卡盘的表面研磨成平滑的。
    • 10. 发明申请
    • TABLE FOR PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING APPARATUS
    • 等离子体处理装置和等离子体处理装置的表
    • US20110192540A1
    • 2011-08-11
    • US13032360
    • 2011-02-22
    • Masakazu HigumaShinji HimoriShoichiro MatsuyamaAtsushi Matsuura
    • Masakazu HigumaShinji HimoriShoichiro MatsuyamaAtsushi Matsuura
    • H01L21/3065C23C16/50
    • H01L21/6831H01J37/32532H01J2237/2001
    • An object of the present invention is to suppress damage of an electrostatic chuck, by controlling stress exerted on each part of a table, which includes an electrically conductive material, i.e., an electrode for generating plasma, a dielectric layer for enhancing the in-plane uniformity of a plasma process, and an electrostatic chuck. The table for a plasma processing apparatus includes an electrically conductive member connected with a high frequency power source and adapted for plasma generation, for drawing ions present in the plasma, or for both thereof; a dielectric layer provided on a top face of the electrically conductive member, having a central portion and a peripheral portion that are different in thickness relative to each other, and adapted for providing uniformity of high frequency electric field intensity in a plane over the substrate to be processed; and an electrode film for an electrostatic chuck, provided in the dielectric layer and adapted for electrostatically chucking the substrate onto a top face of the dielectric layer. With such configuration, the stress exerted on the electrostatic chuck due to temperature change can be controlled.
    • 本发明的一个目的是通过控制施加在桌子的每个部分上的应力来抑制静电卡盘的损坏,包括导电材料即用于产生等离子体的电极,用于增强平面内的电介质层 等离子体工艺的均匀性和静电卡盘。 用于等离子体处理装置的工作台包括与高频电源连接并适于等离子体产生的导电构件,用于吸收存在于等离子体中的离子,或者用于两者; 设置在所述导电构件的顶面上的电介质层,具有相对于彼此不同厚度的中心部分和周边部分,并且适于提供在所述基板上的平面中的高频电场强度的均匀性, 被处理 和用于静电卡盘的电极膜,设置在电介质层中并适用于将电极静电夹持在电介质层的顶面上。 通过这样的结构,可以控制由于温度变化而施加在静电卡盘上的应力。