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1. 发明申请

US20090199967A1 MOUNTING STAGE AND PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：安装阶段和等离子体加工设备
公开(公告)号：US20090199967A1
公开(公告)日：2009-08-13
申请号：US12365385
申请日：2009-02-04
申请人： Shinji Himori , Yasuharu Sasaki , Masakazu Higuma
发明人： Shinji Himori , Yasuharu Sasaki , Masakazu Higuma
IPC分类号： C23F1/08
CPC分类号： H01L21/6833 , H01J37/20 , H01J37/32091 , H01J2237/0209 , H02N13/00
摘要： A mounting stage for a plasma processing apparatus that can prevent degradation of an insulating film in a semiconductor device on a substrate. A conductor member is connected to a radio-frequency power source for producing plasma. A dielectric layer is buried in a central portion of an upper surface of the conductor member. An electrostatic chuck is mounted on the dielectric layer. The electrostatic chuck has an electrode film that satisfies the following condition: δ/z≧85 where δ=(ρv/(μπf))1/2 where z is the thickness of the electrode film, δ is the skin depth of the electrode film with respect to radio-frequency electrical power supplied from the radio-frequency power source, f is the frequency of the radio-frequency electrical power, π is the ratio of a circumference of a circle to its diameter, μ is the magnetic permeability of the electrode film, and ρv is the specific resistance of the electrode film.
摘要翻译：一种等离子体处理装置的安装平台，其能够防止基板上的半导体装置中的绝缘膜的劣化。导体构件连接到用于产生等离子体的射频电源。电介质层埋在导体部件的上表面的中心部分。静电卡盘安装在电介质层上。静电吸盘具有满足以下条件的电极膜：<？in-line-formula description =“In-line formula”end =“lead”？> delta / z> = 85 <？in-line-formula description = “直线公式”end =“tail”？>其中delta =（rhov /（mupif））1/2其中z是电极膜的厚度，delta是电极膜相对于放射线的厚度， f是射频电力的频率，pi是圆周长与其直径的比率，μ是电极膜的导磁率，rhov 是电极膜的电阻率。

2. 发明申请

US20110192540A1 TABLE FOR PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体处理装置和等离子体处理装置的表
公开(公告)号：US20110192540A1
公开(公告)日：2011-08-11
申请号：US13032360
申请日：2011-02-22
申请人： Masakazu Higuma , Shinji Himori , Shoichiro Matsuyama , Atsushi Matsuura
发明人： Masakazu Higuma , Shinji Himori , Shoichiro Matsuyama , Atsushi Matsuura
IPC分类号： H01L21/3065 , C23C16/50
CPC分类号： H01L21/6831 , H01J37/32532 , H01J2237/2001
摘要： An object of the present invention is to suppress damage of an electrostatic chuck, by controlling stress exerted on each part of a table, which includes an electrically conductive material, i.e., an electrode for generating plasma, a dielectric layer for enhancing the in-plane uniformity of a plasma process, and an electrostatic chuck. The table for a plasma processing apparatus includes an electrically conductive member connected with a high frequency power source and adapted for plasma generation, for drawing ions present in the plasma, or for both thereof; a dielectric layer provided on a top face of the electrically conductive member, having a central portion and a peripheral portion that are different in thickness relative to each other, and adapted for providing uniformity of high frequency electric field intensity in a plane over the substrate to be processed; and an electrode film for an electrostatic chuck, provided in the dielectric layer and adapted for electrostatically chucking the substrate onto a top face of the dielectric layer. With such configuration, the stress exerted on the electrostatic chuck due to temperature change can be controlled.
摘要翻译：本发明的一个目的是通过控制施加在桌子的每个部分上的应力来抑制静电卡盘的损坏，包括导电材料即用于产生等离子体的电极，用于增强平面内的电介质层等离子体工艺的均匀性和静电卡盘。用于等离子体处理装置的工作台包括与高频电源连接并适于等离子体产生的导电构件，用于吸收存在于等离子体中的离子，或者用于两者; 设置在所述导电构件的顶面上的电介质层，具有相对于彼此不同厚度的中心部分和周边部分，并且适于提供在所述基板上的平面中的高频电场强度的均匀性，被处理和用于静电卡盘的电极膜，设置在电介质层中并适用于将电极静电夹持在电介质层的顶面上。通过这样的结构，可以控制由于温度变化而施加在静电卡盘上的应力。

3. 发明授权

US08512511B2 Mounting table and plasma processing apparatus 有权
标题翻译：安装台和等离子体处理装置
公开(公告)号：US08512511B2
公开(公告)日：2013-08-20
申请号：US12560924
申请日：2009-09-16
申请人： Shinji Himori , Yasuharu Sasaki
发明人： Shinji Himori , Yasuharu Sasaki
IPC分类号： H01L21/3065 , C23C16/50 , C23C16/509
CPC分类号： H01L21/6833 , H01J37/32091
摘要： A mounting table for use in a plasma processing apparatus, on which a substrate is mounted, includes: a conductive member connected to a high frequency power supply and a high frequency power supply; a dielectric layer embedded in a central portion on an upper surface of the conductive member; and an electrostatic chuck mounted on the dielectric layer. Further, the electrostatic chuck is connected to a high voltage DC power supply and includes an electrode film satisfying following conditions: δ/z≧85 (where δ=(ρv/(μπf))1/2) and, a surface resistivity of the substrate>a surface resistivity of a central portion of the electrode film.
摘要翻译：一种用于安装有基板的等离子体处理装置的安装台，包括：连接到高频电源和高频电源的导电构件; 介电层，其嵌入在所述导电部件的上表面的中央部; 以及安装在电介质层上的静电卡盘。此外，静电卡盘连接到高压直流电源，并且包括满足以下条件的电极膜：δ/ z> = 85（其中δ=（rhov /（mupif））1/2），并且表面电阻率衬底>电极膜的中心部分的表面电阻率。

4. 发明授权

US09202675B2 Plasma processing apparatus and electrode for same 有权
标题翻译：等离子体处理装置和电极相同
公开(公告)号：US09202675B2
公开(公告)日：2015-12-01
申请号：US12718627
申请日：2010-03-05
申请人： Shinji Himori , Daisuke Hayashi
发明人： Shinji Himori , Daisuke Hayashi
IPC分类号： C23F1/08 , C23C16/50 , H01J37/32
CPC分类号： H01J37/3255 , H01J37/32082 , H01J37/32091 , H01J37/32174 , H01J37/32183 , H01J37/32577
摘要： A plasma processing apparatus includes a processing chamber in which a target object is processed by a plasma, a first and a second electrode that are provided in the processing chamber to face each other and have a processing space therebetween, and a high frequency power source that is connected to at least one of the first and the second electrode to supply a high frequency power to the processing chamber. And at least one of the first and the second electrode includes a base formed of a plate-shaped dielectric material and a resistor formed of a metal and provided between the base and the plasma.
摘要翻译：等离子体处理装置包括处理室，其中目标物体由等离子体处理，第一和第二电极设置在处理室中以彼此面对并具有其间的处理空间;以及高频电源，连接到第一和第二电极中的至少一个，以向处理室提供高频电力。并且第一和第二电极中的至少一个包括由板状电介质材料形成的基底和由金属形成并设置在基底和等离子体之间的电阻器。

5. 发明授权

US08568606B2 Substrate processing apparatus and substrate processing method using same 有权
标题翻译：基板处理装置及基板处理方法
公开(公告)号：US08568606B2
公开(公告)日：2013-10-29
申请号：US12750015
申请日：2010-03-30
申请人： Takeshi Ohse , Shinji Himori , Jun Abe , Norikazu Yamada
发明人： Takeshi Ohse , Shinji Himori , Jun Abe , Norikazu Yamada
IPC分类号： C03C15/00
CPC分类号： H01J37/02 , H01J37/32091 , H01J37/32146 , H01J37/32165
摘要： A substrate processing method uses a substrate processing apparatus including a chamber for accommodating a substrate, a lower electrode to mount the substrate, a first RF power applying unit for applying an RF power for plasma generation into the chamber, and a second RF power applying unit for applying an RF power for bias to the lower electrode. The RF power for plasma generation is controlled to be intermittently changed by changing an output of the first RF power applying unit at a predetermined timing. If no plasma state or an afterglow state exists in the chamber by a control of the first RF power applying unit, an output of the second RF power applying unit is controlled to be in an OFF state or decreased below an output of the second RF power applying unit when the output of the first RF power applying unit is a set output.
摘要翻译：基板处理方法使用基板处理装置，其包括用于容纳基板的室，用于安装基板的下电极，用于将用于等离子体产生的RF功率施加到室中的第一RF功率施加单元和第二RF功率施加单元用于向下电极施加用于偏压的RF功率。通过在预定的定时改变第一RF功率施加单元的输出来控制等离子体产生的RF功率间歇地改变。如果通过第一RF功率施加单元的控制在腔室中不存在等离子体状态或余辉状态，则第二RF功率施加单元的输出被控制为处于OFF状态或降低到低于第二RF功率的输出当第一RF功率施加单元的输出为设定输出时，施加单元。

6. 发明授权

US08284538B2 Electrostatic chuck device 有权
标题翻译：静电吸盘装置
公开(公告)号：US08284538B2
公开(公告)日：2012-10-09
申请号：US11835743
申请日：2007-08-08
申请人： Shinji Himori , Shoichiro Matsuyama , Atsushi Matsuura , Hiroshi Inazumachi , Mamoru Kosakai , Yukio Miura , Keigo Maki
发明人： Shinji Himori , Shoichiro Matsuyama , Atsushi Matsuura , Hiroshi Inazumachi , Mamoru Kosakai , Yukio Miura , Keigo Maki
IPC分类号： H01L21/687
CPC分类号： H01L21/6833
摘要： An electrostatic chuck device includes an electrostatic chuck section, a metal base section, and a dielectric plate. The electrostatic chuck section has a substrate, a main surface of which serves as a mounting surface for a plate-like sample, an electrostatic-adsorption inner electrode built in the substrate, and a power supply terminal for applying a DC voltage to the electrostatic-adsorption inner electrode. Here, a dielectric plate is fixed to a concave portion formed in the metal base section. The dielectric plate and the electrostatic chuck section are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric plate and the concave portion are adhesively bonded to each other with a conductive adhesive bonding layer interposed therebetween, the volume resistivity of which is 1.0×10−2 Ωcm or less.
摘要翻译：静电吸盘装置包括静电吸盘部，金属基部和电介质板。静电吸盘部具有基板，其主面作为板状试样的安装面，内置于基板的静电吸附内部电极，以及向静电吸引部施加直流电压的电源端子，吸附内电极。这里，电介质板被固定到形成在金属基部中的凹部。电介质板和静电卡盘部分之间插入绝缘粘合剂粘合层彼此粘合。电介质板和凹部之间以导电性粘合剂层粘合地结合，其体积电阻率为1.0×10-2＆OHgr·cm以下。

7. 发明授权

US08178444B2 Substrate processing method and substrate processing apparatus 有权
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US08178444B2
公开(公告)日：2012-05-15
申请号：US12363992
申请日：2009-02-02
申请人： Chishio Koshimizu , Taichi Hirano , Masanobu Honda , Shinji Himori
发明人： Chishio Koshimizu , Taichi Hirano , Masanobu Honda , Shinji Himori
IPC分类号： H01L21/311 , H01L21/302
CPC分类号： H01L21/67109 , H01J37/32009 , H01J37/3255 , H01J37/32724 , H01L21/67248 , H01L21/6831
摘要： A substrate processing method that can eliminate unevenness in the distribution of plasma. The method is for a substrate processing apparatus that has a processing chamber in which a substrate is housed, a mounting stage that is disposed in the processing chamber and on which the substrate is mounted, and an electrode plate that is disposed in the processing chamber such as to face the mounting stage, the electrode plate being made of silicon and connected to a radio-frequency power source, and carries out plasma processing on the substrate. In the plasma processing, the temperature of the electrode plate is measured, and based on the measured temperature, the temperature of the electrode plate is maintained lower than a critical temperature at which the specific resistance value of the silicon starts changing.
摘要翻译：能够消除等离子体分布不均匀的基板处理方法。该方法是用于具有容纳基板的处理室的基板处理装置，设置在处理室中并安装有基板的安装台以及设置在处理室中的电极板为了面对安装台，电极板由硅制成并连接到射频电源，并对基片执行等离子体处理。在等离子体处理中，测量电极板的温度，并且基于测量的温度，电极板的温度保持低于硅的比电阻值开始变化的临界温度。

8. 发明申请

US20060221540A1 Capacitive coupling plasma processing apparatus 有权
公开(公告)号：US20060221540A1
公开(公告)日：2006-10-05
申请号：US11392811
申请日：2006-03-30
申请人： Shinji Himori , Tatsuo Matsudo
发明人： Shinji Himori , Tatsuo Matsudo
IPC分类号： H01T23/00
CPC分类号： H01J37/32082 , H01J37/32091 , H01J37/32532 , H01J37/32568
摘要： A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. The second electrode includes a plurality of conductive segments separated from each other and facing the first electrode. An RF power supply is configured to apply an RF power to the first electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma by the RF electric field. A DC power supply is configured to apply a DC voltage to at least one of the segments of the second electrode.

9. 发明申请

US20120247677A1 SUBSTRATE PROCESSING METHOD 审中-公开
标题翻译：基板处理方法
公开(公告)号：US20120247677A1
公开(公告)日：2012-10-04
申请号：US13434989
申请日：2012-03-30
申请人： Shinji Himori , Norikazu Yamada , Ohse Takeshi
发明人： Shinji Himori , Norikazu Yamada , Ohse Takeshi
IPC分类号： H01L21/306 , H01L21/3065
CPC分类号： H01J37/32697 , H01J37/32091 , H01J37/32165 , H01J37/32366 , H01J37/32642 , H01J37/32706 , H01J37/32724 , H01J2237/327
摘要： A substrate processing apparatus capable of improving a processing controllability in an etching process is provided. The substrate processing apparatus (10) includes a depressurized processing room (11); a susceptor (12) that is provided in the processing room (11) and configured to mount a wafer (W) thereon; a HF high frequency power supply (18) configured to apply a high frequency voltage for plasma generation to the susceptor (12); a LF high frequency power supply (20) configured to apply a high frequency voltage for a bias voltage generation to the susceptor (12); and a DC voltage applying unit (23) configured to apply a DC voltage of a rectangle-shaped wave to the susceptor (12).
摘要翻译：提供了能够提高蚀刻处理中的处理可控性的基板处理装置。基板处理装置（10）具有减压处理室（11）。设置在处理室（11）中并构造成在其上安装晶片（W）的感受体（12）; HF高频电源（18），被配置为向所述基座（12）施加用于等离子体产生的高频电压; LF高频电源（20），被配置为向所述基座（12）施加偏置电压产生的高频电压; 以及直流电压施加单元（23），被配置为向所述基座（12）施加矩形波的直流电压。

10. 发明授权

US08114247B2 Plasma processing apparatus and focus ring 有权
标题翻译：等离子体处理装置和聚焦环
公开(公告)号：US08114247B2
公开(公告)日：2012-02-14
申请号：US12941701
申请日：2010-11-08
申请人： Shosuke Endoh , Shinji Himori
发明人： Shosuke Endoh , Shinji Himori
IPC分类号： H01L21/3065 , H01L21/205
CPC分类号： H01L21/67069 , H01J37/32642 , Y10T279/23
摘要： A plasma processing apparatus and a focus ring enables to perform uniform plasma processing over the entire surface of a substrate to be processed to thereby improve in-surface uniformity of plasma processing compared with conventional cases. The focus ring is disposed on a susceptor 2, which serves to mount thereon a semiconductor wafer W and further functions as a lower electrode, to surround a periphery of the semiconductor wafer W. The focus ring 6 includes a ring member of a thin plate shape disposed to surround the periphery of the wafer W while maintaining a gap therebetween and a lower ring body installed below the semiconductor wafer and the ring member of the thin plate shape.
摘要翻译：等离子体处理装置和聚焦环能够在待处理的基板的整个表面上进行均匀的等离子体处理，从而提高等离子体处理的表面均匀性，与常规情况相比。聚焦环设置在基座2上，该基座2用于在其上安装半导体晶片W，并且还用作下部电极，以围绕半导体晶片W的周围。聚焦环6包括薄板形状的环形构件设置成围绕晶片W的周边保持间隙，并且安装在半导体晶片下方的下环体和薄板形状的环构件。

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