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1. 发明授权

US5627204A Chromone derivative, and aldose reductase inhibitor comprising said compound as active component 失效
公开(公告)号：US5627204A
公开(公告)日：1997-05-06
申请号：US465950
申请日：1995-06-06
申请人： Yasushi Igarashi , Takuji Yamaguchi , Yoshimitsu Ogawa , Mika Tomita , Hiroko Hayashi , Toshitsugu Sato , Kunio Hosaka
发明人： Yasushi Igarashi , Takuji Yamaguchi , Yoshimitsu Ogawa , Mika Tomita , Hiroko Hayashi , Toshitsugu Sato , Kunio Hosaka
IPC分类号： C07D311/54 , C07D405/12 , C07D417/12 , A61K31/355 , A61K31/415 , A61K31/44 , A61K31/495
CPC分类号： C07D405/12 , C07D311/54 , C07D417/12
摘要： The present invention relates to a chromone derivative and an aldose reductase inhibitor comprising said compound as efective component, which is represented by the following formula: ##STR1## wherein R.sub.1 and R.sub.2 each represent a lower alkyl group, etc., R.sub.3 represents an oxygen atom, a sulfur atom, etc., R.sub.7 represents a phenyl group substituted or not substituted, etc., and R represents a hydrogen atom or a lower alkoxy group. The present compounds exhibit superior inhititory action on aldose reductase and are useful for the treatment of various complications of diseases in diabetes, such as cataract, retinopathy, keratopathy, nephropathy, and neuropathy.

2. 发明授权

US5455267A Chromone derivative, and aldose reductase inhibitor comprising said compound as active component 失效
标题翻译：色酮衍生物和醛糖还原酶抑制剂，其包含所述化合物作为活性成分
公开(公告)号：US5455267A
公开(公告)日：1995-10-03
申请号：US322396
申请日：1994-10-12
申请人： Yasushi Igarashi , Takuji Yamaguchi , Yoshimitsu Ogawa , Mika Tomita , Hiroko Hayashi , Toshitsugu Sato , Kunio Hosaka
发明人： Yasushi Igarashi , Takuji Yamaguchi , Yoshimitsu Ogawa , Mika Tomita , Hiroko Hayashi , Toshitsugu Sato , Kunio Hosaka
IPC分类号： C07D311/54 , C07D405/12 , C07D417/12 , A61K31/355
CPC分类号： C07D405/12 , C07D311/54 , C07D417/12
摘要： The present invention relates to a chromone derivative and an aldose reductase inhibitor comprising said compound as efective component, which is represented by the following formula: ##STR1## wherein R.sub.1 and R.sub.2 each represent a lower alkyl group, etc., R.sub.3 represents an oxygen atom, a sulfur atom, etc., R.sub.7 represents a phenyl group substituted or not substituted, etc., and R represents a hydrogen atom or a lower alkoxy group. The present compounds exhibit superior inhititory action on aldose reductase and are useful for the treatment of various complications of diseases in diabetes, such as cataract, retinopathy, keratopathy, nephropathy, and neuropathy.
摘要翻译：本发明涉及色酮衍生物和醛糖还原酶抑制剂，其包含作为有效成分的所述化合物，其由下式表示：其中R 1和R 2各自表示低级烷基等，R 3表示氧原子，硫原子等，R7表示取代或未取代的苯基等，R表示氢原子或低级烷氧基。本发明化合物对醛糖还原酶表现出优异的抑制作用，可用于治疗糖尿病诸如白内障，视网膜病变，角膜病，肾病和神经病变的各种并发症。

3. 发明授权

US5521216A Chromone derivative, and aldose reductase inhibitor comprising said compound as active ingredient 失效
标题翻译：色酮衍生物和醛糖还原酶抑制剂，其包含所述化合物作为活性成分
公开(公告)号：US5521216A
公开(公告)日：1996-05-28
申请号：US182028
申请日：1994-05-12
申请人： Yasushi Igarashi , Takuji Yamaguchi , Kunio Hosaka
发明人： Yasushi Igarashi , Takuji Yamaguchi , Kunio Hosaka
IPC分类号： A61K31/35 , A61K31/352 , A61P3/08 , A61P3/10 , A61P13/02 , A61P15/00 , A61P27/02 , A61P27/12 , C07D311/54 , C07D311/16
CPC分类号： C07D311/54
摘要： The present invention relates to a chromone derivative of formula (1): ##STR1## (wherein R.sub.1 and R.sub.2 are the same or different and independently represent a hydrogen atom or a lower alkyl group) as well as a synthetic intermediate thereof and an aldose reductase inhibitor comprising said derivative as an active ingredient. The chromone derivatives of the present invention can be easily synthesized, and are useful as aldose reductase inhibitor with an excellent inhibitory action on aldose reductase.
摘要翻译： PCT No.PCT / JP93 / 00699 Sec。 371日期：1994年5月12日 102（e）日期1994年5月12日PCT提交1993年5月26日PCT公布。第WO93 / 24477号PCT公告本发明涉及式（1）的色酮衍生物：其中R1和R2相同或不同并且独立地表示氢原子或低级烷基）作为以及其合成中间体和包含所述衍生物作为活性成分的醛糖还原酶抑制剂。本发明的色酮衍生物可以容易地合成，可用作对醛糖还原酶具有优异抑制作用的醛糖还原酶抑制剂。

4. 发明授权

US5675023A Chromone derivative, and aldose reductase inhibitor comprising said compound as active component 失效
标题翻译：色酮衍生物和醛糖还原酶抑制剂，其包含所述化合物作为活性成分
公开(公告)号：US5675023A
公开(公告)日：1997-10-07
申请号：US469682
申请日：1995-06-06
申请人： Yasushi Igarashi , Takuji Yamaguchi , Yoshimitsu Ogawa , Mika Tomita , Hiroko Hayashi , Toshitsugu Sato , Kunio Hosaka
发明人： Yasushi Igarashi , Takuji Yamaguchi , Yoshimitsu Ogawa , Mika Tomita , Hiroko Hayashi , Toshitsugu Sato , Kunio Hosaka
IPC分类号： C07D311/54 , C07D405/12 , C07D417/12 , C07D405/02 , C07D407/12
CPC分类号： C07D405/12 , C07D311/54 , C07D417/12
摘要： The present invention relates to a chromone derivative and an aldose reductase inhibitor comprising said compound as efective component, which is represented by the following formula: ##STR1## wherein R.sub.1 and R.sub.2 each represent a lower alkyl group, etc., R.sub.3 represents an oxygen atom, a sulfur atom, etc., R.sub.7 represents a phenyl group substituted or not substituted, etc., and R represents a hydrogen atom or a lower alkoxy group. The present compounds exhibit superior inhititory action on aldose reductase and are useful for the treatment of various complications of diseases in diabetes, such as cataract, retinopathy, keratopathy, nephropathy, and neuropathy.
摘要翻译：本发明涉及色酮衍生物和醛糖还原酶抑制剂，其包含作为有效成分的所述化合物，其由下式表示：其中R 1和R 2各自表示低级烷基等，R 3表示氧原子，硫原子等，R7表示取代或未取代的苯基等，R表示氢原子或低级烷氧基。本发明化合物对醛糖还原酶表现出优异的抑制作用，可用于治疗糖尿病诸如白内障，视网膜病变，角膜病，肾病和神经病变的各种并发症。

5. 发明授权

US06600185B1 Ferroelectric capacitor with dielectric lining, semiconductor memory device employing same, and fabrication methods thereof 有权
标题翻译：具有介质衬里的铁电电容器，采用其的半导体存储器件及其制造方法
公开(公告)号：US06600185B1
公开(公告)日：2003-07-29
申请号：US09482538
申请日：2000-01-14
申请人： Kouichi Tani , Yasushi Igarashi
发明人： Kouichi Tani , Yasushi Igarashi
IPC分类号： H01L27108
CPC分类号： H01L28/55 , H01L21/76838
摘要： A ferroelectric capacitor has a top electrode, a bottom electrode, a ferroelectric body disposed between the top and bottom electrodes, and a dielectric lining disposed below the top electrode and above the bottom electrode, protecting the sides of the ferroelectric body. The ferroelectric body can be formed by chemical-mechanical polishing of a ferroelectric film. In a memory device, the capacitor is coupled to a transistor. The dielectric lining protects the ferroelectric body from etching damage during the fabrication process, obviating the need for repeated annealing to repair such damage, thereby avoiding the alteration of transistor characteristics that would be caused by such annealing.
摘要翻译：铁电电容器具有顶电极，底电极，设置在顶电极和底电极之间的铁电体，以及设置在顶电极下方和底电极上方的电介质衬垫，保护铁电体的侧面。铁电体可以通过铁电膜的化学机械抛光来形成。在存储器件中，电容器耦合到晶体管。电介质衬里在制造过程中保护铁电体免受蚀刻损伤，消除了对重复退火以修复这种损伤的需要，从而避免了由这种退火引起的晶体管特性的改变。

6. 发明授权

US08188555B2 Capacitive sensor and manufacturing method therefor 有权
标题翻译：电容传感器及其制造方法
公开(公告)号：US08188555B2
公开(公告)日：2012-05-29
申请号：US12277329
申请日：2008-11-25
申请人： Yasushi Igarashi
发明人： Yasushi Igarashi
IPC分类号： H01L29/84
CPC分类号： G01P15/125 , B81B7/02 , B81B2201/0235 , B81B2201/0264 , B81B2207/092 , B81C1/00301 , G01P1/023 , G01P2015/0828
摘要： A capacitive sensor includes a semiconductor substrate, a fixed electrode serving as a first electrode formed on a surface of or in the semiconductor substrate, a structure formed on the semiconductor substrate to have a vibratable second electrode that is formed to be spaced from and opposed to the semiconductor substrate and from the fixed electrode serving as the first electrode, a sealing member serving as a first sealing member formed on the semiconductor substrate to be spaced from the structure, to cover the structure, and to have a through hole serving as a first through hole, and a movable electrode serving as a vibratable third electrode formed on the sealing member to block up the through hole, and to be spaced from and opposed to the movable electrode.
摘要翻译：电容传感器包括半导体衬底，用作形成在半导体衬底的表面上或半导体衬底中的第一电极的固定电极，形成在半导体衬底上的结构，以具有形成为与第二电极间隔开并与之相对的可振动的第二电极半导体衬底和用作第一电极的固定电极，用作第一密封构件的密封构件，形成在半导体衬底上以与结构间隔开以覆盖结构，并且具有用作第一电极的通孔通孔，以及用作可振动的第三电极的可动电极，形成在密封构件上以阻挡通孔，并与可动电极间隔开并与之相对。

7. 发明授权

US06573587B1 Metal oxide capacitor with hydrogen diffusion blocking covering 有权
标题翻译：具有氢扩散阻挡覆盖层的金属氧化物电容器
公开(公告)号：US06573587B1
公开(公告)日：2003-06-03
申请号：US10154824
申请日：2002-05-28
申请人： Yasushi Igarashi
发明人： Yasushi Igarashi
IPC分类号： H01L2900
CPC分类号： H01L28/55 , Y10S438/957
摘要： A semiconductor device of the present invention includes capacitors made up of a lower electrode, a capacitive insulation film made from metal oxide material, provided on one surface of a semiconductor substrate. An ozone TEOS film is provided on these capacitors, and a protective film for covering the upper surfaces of the capacitors is then provided on this ozone TEOS film. An interlay insulation film that is thicker than the ozone TEOS film is provided on the protective film for covering the upper surfaces of the capacitors. In this way, the present invention prevents degradation in film quality of the capacitive insulation film due to mutual reaction etc. As a result, it becomes possible to provide a capacitor using an insulating film made of a metal oxide as a capacitive insulation film, having a protective film for sufficiently preventing diffusion of H2, a semiconductor device having high reliability, and a method of manufacturing such a semiconductor device, are provided.
摘要翻译：本发明的半导体器件包括由半导体衬底的一个表面上的下电极，由金属氧化物材料制成的电容绝缘膜构成的电容器。在这些电容器上设置臭氧TEOS膜，然后在该臭氧TEOS膜上设置用于覆盖电容器的上表面的保护膜。在保护膜上设置比臭氧TEOS膜厚的层间绝缘膜，以覆盖电容器的上表面。以这种方式，本发明可防止由于相互反应等导致的电容绝缘膜的膜质量的劣化。结果，可以提供一种使用由金属氧化物制成的绝缘膜作为电容绝缘膜的电容器，具有提供了充分防止H2扩散的保护膜，具有高可靠性的半导体器件及其制造方法。

8. 发明授权

US06426906B1 Read-out circuit 失效
标题翻译：读出电路
公开(公告)号：US06426906B1
公开(公告)日：2002-07-30
申请号：US09941722
申请日：2001-08-30
申请人： Yasushi Igarashi
发明人： Yasushi Igarashi
IPC分类号： G11C700
CPC分类号： G11C11/22
摘要： A read-out circuit capable of achieving an improvement in the reliability of a reference potential generating cell by utilizing a 1T-1C (one transistor-one ferroelectric capacitor) type FRAM which enables a reduction in area to constitute the reference potential generating cell is provided. A read-out circuit that amplifies a binary signal through a sense amplifier and reads out the amplified signal as a bit line potential is provided with a 0-level setting circuit that resets the lower potential signal in the binary signal to 0 V at a stage preceding the sense amplifier. By adopting this structure, a constant potential can be used as a reference potential, to achieve stable operation. In addition since a constant potential can be used as the reference potential, the degree of change occurring over time can be reduced. Furthermore, since the capacity of the reference potential line does not require a particularly large capacity, the power consumption during a read-out operation can be reduced.
摘要翻译：提供一种能够通过利用能够减小面积来构成参考电位生成单元的1T-1C（一晶体管一铁电电容器）型FRAM来实现参考电位生成单元的可靠性提高的读出电路。通过读出放大器放大二进制信号并读出放大的信号作为位线电位的读出电路设置有0电平设置电路，该电平将二进制信号中的较低电位信号复位为0V 在读出放大器之前。通过采用这种结构，可以将恒定电位用作参考电位，以实现稳定的操作。此外，由于可以使用恒定电位作为参考电位，所以可以减少随时间发生的变化程度。此外，由于参考电位线的容量不需要特别大的容量，所以可以减少读出操作期间的功耗。

9. 发明授权

US07256088B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07256088B2
公开(公告)日：2007-08-14
申请号：US11091529
申请日：2005-03-29
申请人： Yasushi Igarashi
发明人： Yasushi Igarashi
IPC分类号： H01L21/8242
CPC分类号： H01L28/55 , Y10S438/957
摘要： A semiconductor device of the present invention includes capacitors made up of a lower electrode, a capacitive insulation film made from metal oxide material, provided on one surface of a semiconductor substrate. An ozone TEOS film is provided on these capacitors, and a protective film for covering the upper surfaces of the capacitors is then provided on this ozone TEOS film. An interlay insulation film that is thicker than the ozone TEOS film is provided on the protective film for covering the upper surfaces of the capacitors. In this way, the present invention prevents degradation in film quality of the capacitive insulation film due to mutual reaction etc. As a result, it becomes possible to provide a capacitor using an insulating film made of a metal oxide as a capacitive insulation film, having a protective film for sufficiently preventing diffusion of H2, a semiconductor device having high reliability, and a method of manufacturing such a semiconductor device, are provided.
摘要翻译：本发明的半导体器件包括由半导体衬底的一个表面上的下电极，由金属氧化物材料制成的电容绝缘膜构成的电容器。在这些电容器上设置臭氧TEOS膜，然后在该臭氧TEOS膜上设置用于覆盖电容器的上表面的保护膜。在保护膜上设置比臭氧TEOS膜厚的层间绝缘膜，以覆盖电容器的上表面。以这种方式，本发明可防止由于相互反应等导致的电容绝缘膜的膜质量的劣化。结果，可以提供一种使用由金属氧化物制成的绝缘膜作为电容绝缘膜的电容器，具有提供了用于充分防止H 2 H 2扩散的保护膜，具有高可靠性的半导体器件，以及制造这种半导体器件的方法。

10. 发明授权

US06834006B2 Method and circuit for reading data from a ferroelectric memory cell 有权
标题翻译：用于从铁电存储单元读取数据的方法和电路
公开(公告)号：US06834006B2
公开(公告)日：2004-12-21
申请号：US10247375
申请日：2002-09-20
申请人： Yasushi Igarashi
发明人： Yasushi Igarashi
IPC分类号： G11C1122
CPC分类号： G11C11/22
摘要： Data stored in a ferroelectric capacitor in a ferroelectric memory cell are read by applying a preliminary voltage to the ferroelectric capacitor to increase its polarization if a certain data value is stored, then applying a series of read voltages to produce a potential responsive to the stored data. The preliminary voltage may be applied either before or after one terminal of the ferroelectric capacitor is placed in a floating state, which is maintained while the series of read voltages is applied. Application of the preliminary voltage provides an increased reading margin if the ferroelectric capacitor has partially lost polarization while storing the certain data value, by restoring some of the lost polarization.
摘要翻译：通过向铁电电容器施加初步电压来读取存储在铁电存储单元中的铁电电容器的数据，以便如果存储某个数据值则增加其极化，然后施加一系列读取电压以响应于所存储的数据产生电位。可以在将铁电电容器的一个端子置于浮置状态之前或之后施加初始电压，该浮置状态在施加一系列读取电压时保持。如果铁电电容器通过恢复一些失去的极化而在存储某些数据值的同时部分地失去极化，则初始电压的应用提供增加的读取余量。

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