专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20060291246A1 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US20060291246A1
公开(公告)日：2006-12-28
申请号：US11287236
申请日：2005-11-28
申请人： Yasushi Hattori , Shinji Saito , Shinya Nunoue , Masahiro Yamamoto , Naomi Shida , Kei Kaneko , Genichi Hatakoshi
发明人： Yasushi Hattori , Shinji Saito , Shinya Nunoue , Masahiro Yamamoto , Naomi Shida , Kei Kaneko , Genichi Hatakoshi
IPC分类号： F21V7/04
CPC分类号： H01L33/507 , H01L33/505 , H01L33/60 , H01L2224/45144 , H01L2224/48091 , H01L2924/3025 , H01S5/005 , H01S5/02248 , H01S5/0228 , H01S5/183 , H01S5/32341 , H01S5/327 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor light emitting element includes a semiconductor light emitting element emitting light beams in ultraviolet ranges and visible ranges, and a fluorescent element absorbing the light beams from the semiconductor light emitting element and outputting visible light beams in a light taking-out direction different from a light emitting direction. The light beams emitted from the light emitting element is absorbed within the semiconductor light emitting device.
摘要翻译：半导体发光元件包括发射紫外范围和可见光范围的光束的半导体发光元件，以及吸收来自半导体发光元件的光束的荧光元件，并且沿与第一半导体发光元件不同的光取出方向输出可见光束发光方向。从发光元件发射的光束在半导体发光器件内被吸收。

2. 发明授权

US07525127B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US07525127B2
公开(公告)日：2009-04-28
申请号：US11287236
申请日：2005-11-28
申请人： Yasushi Hattori , Shinji Saito , Shinya Nunoue , Masahiro Yamamoto , Naomi Shida , Kei Kaneko , Genichi Hatakoshi
发明人： Yasushi Hattori , Shinji Saito , Shinya Nunoue , Masahiro Yamamoto , Naomi Shida , Kei Kaneko , Genichi Hatakoshi
IPC分类号： H01L27/15
CPC分类号： H01L33/507 , H01L33/505 , H01L33/60 , H01L2224/45144 , H01L2224/48091 , H01L2924/3025 , H01S5/005 , H01S5/02248 , H01S5/0228 , H01S5/183 , H01S5/32341 , H01S5/327 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor light emitting element includes a semiconductor light emitting element emitting light beams in ultraviolet ranges and visible ranges, and a fluorescent element absorbing the light beams from the semiconductor light emitting element and outputting visible light beams in a light taking-out direction different from a light emitting direction. The light beams emitted from the light emitting element are absorbed within the semiconductor light emitting device.
摘要翻译：半导体发光元件包括发射紫外范围和可见光范围的光束的半导体发光元件，以及吸收来自半导体发光元件的光束的荧光元件，并且沿与第一半导体发光元件不同的光取出方向输出可见光束发光方向。从发光元件发射的光束被吸收在半导体发光器件内。

3. 发明申请

US20070228390A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20070228390A1
公开(公告)日：2007-10-04
申请号：US11668218
申请日：2007-01-29
申请人： Yasushi HATTORI , Shinya Nunoue , Genichi Hatakoshi , Shinji Saito , Naomi Shida , Masahiro Yamamoto
发明人： Yasushi HATTORI , Shinya Nunoue , Genichi Hatakoshi , Shinji Saito , Naomi Shida , Masahiro Yamamoto
IPC分类号： H01L33/00
CPC分类号： H01L33/505 , H01L25/0753 , H01L33/54 , H01L33/56 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2924/00011 , H01L2924/01021 , H01L2924/01066 , H01L2924/09701 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/01049 , H01L2924/00012
摘要： A light-emitting device is provided, which includes a substrate having a plane surface, a semiconductor light-emitting element mounted on the plane surface of the substrate and which emits light in a range from ultraviolet ray to visible light, a first light transmissible layer formed above the substrate and covering the semiconductor light-emitting element, a phosphor layer formed above the first light transmissible layer and containing phosphor particles and matrix, and a second light transmissible layer formed above the phosphor layer and contacting with the plane surface of the substrate. The surface of the phosphor layer has projections reflecting shapes of the phosphor particles.
摘要翻译：提供一种发光装置，其包括具有平面的基板，安装在基板的平面上的半导体发光元件，其发射从紫外线到可见光的范围内的光，第一透光层形成在基板上并覆盖半导体发光元件，形成在第一透光层上方并含有荧光体粒子和基体的荧光体层，以及形成在荧光体层的上方并与基板的平面接触的第二透光层。荧光体层的表面具有反射荧光体颗粒的形状的突起。

4. 发明授权

US08294165B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US08294165B2
公开(公告)日：2012-10-23
申请号：US11668218
申请日：2007-01-29
申请人： Yasushi Hattori , Shinya Nunoue , Genichi Hatakoshi , Shinji Saito , Naomi Shida , Masahiro Yamamoto
发明人： Yasushi Hattori , Shinya Nunoue , Genichi Hatakoshi , Shinji Saito , Naomi Shida , Masahiro Yamamoto
IPC分类号： H01L33/50 , H01L33/54 , H01L33/56
CPC分类号： H01L33/505 , H01L25/0753 , H01L33/54 , H01L33/56 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2924/00011 , H01L2924/01021 , H01L2924/01066 , H01L2924/09701 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/01049 , H01L2924/00012
摘要： A light-emitting device is provided, which includes a substrate having a plane surface, a semiconductor light-emitting element mounted on the plane surface of the substrate and which emits light in a range from ultraviolet ray to visible light, a first light transmissible layer formed above the substrate and covering the semiconductor light-emitting element, a phosphor layer formed above the first light transmissible layer and containing phosphor particles and matrix, and a second light transmissible layer formed above the phosphor layer and contacting with the plane surface of the substrate. The surface of the phosphor layer has projections reflecting shapes of the phosphor particles.
摘要翻译：提供一种发光装置，其包括具有平面的基板，安装在基板的平面上的半导体发光元件，其发射从紫外线到可见光的范围内的光，第一透光层形成在基板上并覆盖半导体发光元件，形成在第一透光层上方并含有荧光体粒子和基体的荧光体层，以及形成在荧光体层的上方并与基板的平面接触的第二透光层。荧光体层的表面具有反射荧光体颗粒的形状的突起。

5. 发明授权

US08354681B2 Semiconductor light-emitting element and manufacturing method thereof 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US08354681B2
公开(公告)日：2013-01-15
申请号：US11689246
申请日：2007-03-21
申请人： Yasushi Hattori , Shinya Nunoue , Shinji Saito , Genichi Hatakoshi
发明人： Yasushi Hattori , Shinya Nunoue , Shinji Saito , Genichi Hatakoshi
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/382 , H01L33/46 , H01L33/60 , H01L2224/48091 , H01L2224/73265 , H01L2224/8592 , H01L2924/00014
摘要： A semiconductor light-emitting element including a semiconductor substrate having a first surface and second surface faced on the opposite side of the first surface, the semiconductor substrate having a recessed portion formed in the first surface, and the recessed portion having a V-shaped cross-section, a reflecting layer formed on an inner surface of the recessed portion, a first electrode formed on the reflecting layer, a light-emitting layer formed on the second surface, and a second electrode formed on the light-emitting layer.
摘要翻译：一种半导体发光元件，包括具有第一表面和第二表面的半导体衬底，所述第一表面和第二表面面对所述第一表面的相对侧，所述半导体衬底具有形成在所述第一表面中的凹部，所述凹部具有V形十字形成在所述凹部的内表面上的反射层，形成在所述反射层上的第一电极，形成在所述第二表面上的发光层，以及形成在所述发光层上的第二电极。

6. 发明申请

US20080006838A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US20080006838A1
公开(公告)日：2008-01-10
申请号：US11689246
申请日：2007-03-21
申请人： Yasushi Hattori , Shinya Nunoue , Shinji Saito , Genichi Hatakoshi
发明人： Yasushi Hattori , Shinya Nunoue , Shinji Saito , Genichi Hatakoshi
IPC分类号： H01L29/22 , H01L21/00
CPC分类号： H01L33/20 , H01L33/382 , H01L33/46 , H01L33/60 , H01L2224/48091 , H01L2224/73265 , H01L2224/8592 , H01L2924/00014
摘要： A semiconductor light-emitting element including a semiconductor substrate having a first surface and second surface faced on the opposite side of the first surface, the semiconductor substrate having a recessed portion formed in the first surface, and the recessed portion having a V-shaped cross-section, a reflecting layer formed on an inner surface of the recessed portion, a first electrode formed on the reflecting layer, a light-emitting layer formed on the second surface, and a second electrode formed on the light-emitting layer.
摘要翻译：一种半导体发光元件，包括具有第一表面和第二表面的半导体衬底，所述第一表面和第二表面面对所述第一表面的相对侧，所述半导体衬底具有形成在所述第一表面中的凹部，所述凹部具有V形十字形成在所述凹部的内表面上的反射层，形成在所述反射层上的第一电极，形成在所述第二表面上的发光层，以及形成在所述发光层上的第二电极。

7. 发明授权

US06252894B1 Semiconductor laser using gallium nitride series compound semiconductor 有权
标题翻译：半导体激光器采用氮化镓系列化合物半导体
公开(公告)号：US06252894B1
公开(公告)日：2001-06-26
申请号：US09263213
申请日：1999-03-05
申请人： Katsunobu Sasanuma , Shinji Saito , Genichi Hatakoshi , Kazuhiko Itaya , Masaaki Onomura , Risa Sugiura , Mikio Nakasuji , Hidetoshi Fujimoto , Masahiro Yamamoto , Shinya Nunoue
发明人： Katsunobu Sasanuma , Shinji Saito , Genichi Hatakoshi , Kazuhiko Itaya , Masaaki Onomura , Risa Sugiura , Mikio Nakasuji , Hidetoshi Fujimoto , Masahiro Yamamoto , Shinya Nunoue
IPC分类号： H01S500
CPC分类号： H01S5/32341 , H01S5/0213 , H01S5/0655 , H01S5/2004 , H01S5/205 , H01S5/2219 , H01S5/222 , H01S5/2231 , H01S2301/18
摘要： A semiconductor laser is formed of gallium nitride series compound semiconductor and has a double hetero structure including an MQW (multiple quantum well) active layer held between p-type and n-type AlGaN clad layers. The double hetero structure is held between p-type and n-type contact layers. An InGaN optical absorption layer having an optical absorption coefficient larger than the clad layer which has the same conductivity type as the contact layer and is formed adjacent to the contact layer is formed in at least one of the contact layers and an InAlGaN optical guided mode control layer (layer of small refractive index) having an refractive index smaller than the clad layer is formed on the exterior of the optical absorption layer.
摘要翻译：半导体激光器由氮化镓系化合物半导体形成，具有包含保持在p型和n型AlGaN覆盖层之间的MQW（多量子阱）有源层的双异质结构。双异质结构保持在p型和n型接触层之间。在至少一个接触层和InAlGaN光学引导模式控制中形成具有大于具有与接触层相同的导电类型并且与接触层相邻的覆盖层的光吸收系数的InGaN光吸收层在光吸收层的外部形成折射率小于包层的层（小折射率层）。

8. 发明授权

US07763907B2 Semiconductor light emitting element 失效
标题翻译：半导体发光元件
公开(公告)号：US07763907B2
公开(公告)日：2010-07-27
申请号：US11850404
申请日：2007-09-05
申请人： Koichi Tachibana , Hajime Nago , Shinji Saito , Shinya Nunoue , Genichi Hatakoshi
发明人： Koichi Tachibana , Hajime Nago , Shinji Saito , Shinya Nunoue , Genichi Hatakoshi
IPC分类号： H01L33/22 , H01L33/14 , H01L33/38
CPC分类号： H01L33/32 , H01L33/02 , H01L33/16
摘要： A semiconductor light emitting element includes: an {0001} n-type semiconductor substrate formed of a III-V semiconductor, which is in a range of 0° to 45° in inclination angle into a direction, and which is in a range of 0° to 10° in inclination angle into a direction; an n-type layer formed of a III-V semiconductor on the n-type semiconductor substrate; an n-type guide layer formed of a III-V semiconductor above the n-type layer; an active layer formed of a III-V semiconductor above the n-type guide layer; a p-type first guide layer formed of a III-V semiconductor above the active layer; a p-type contact layer formed of a III-V semiconductor above the p-type first guide layer; and an concavo-convex layer formed of a III-V semiconductor between the p-type first guide layer and the p-type contact layer. The concavo-convex layer has concave portions and convex portions which are alternately and regularly arranged at a top face thereof, and has lower p-type impurity concentration than that of the p-type contact layer.
摘要翻译：半导体发光元件包括：由III-V族半导体形成的{0001} n型半导体衬底，其倾斜角度在0°至45°的范围内，并且其为在倾斜角度为0°至10°的范围内成为<11-20>方向; 在n型半导体衬底上由III-V半导体形成的n型层; 由n型层上方的III-V族半导体形成的n型引导层; 由n型引导层上方的III-V族半导体形成的有源层; 由有源层上方的III-V族半导体形成的p型第一引导层; p型接触层，其由p型第一引导层上方的III-V族半导体形成; 以及在p型第一引导层和p型接触层之间由III-V族半导体形成的凹凸层。该凹凸层具有在顶面交替规则地配置的凹部和凸部，并且p型杂质浓度比p型接触层低。

9. 发明申请

US20080179623A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT 失效
标题翻译：半导体发光元件
公开(公告)号：US20080179623A1
公开(公告)日：2008-07-31
申请号：US11850404
申请日：2007-09-05
申请人： Koichi TACHIBANA , Hajime Nago , Shinji Saito , Shinya Nunoue , Genichi Hatakoshi
发明人： Koichi TACHIBANA , Hajime Nago , Shinji Saito , Shinya Nunoue , Genichi Hatakoshi
IPC分类号： H01L29/24
CPC分类号： H01L33/32 , H01L33/02 , H01L33/16
摘要： A semiconductor light emitting element includes: an {0001} n-type semiconductor substrate formed of a III-V semiconductor, which is in a range of 0° to 45° in inclination angle into a direction, and which is in a range of 0° to 10° in inclination angle into a direction; an n-type layer formed of a III-V semiconductor on the n-type semiconductor substrate; an n-type guide layer formed of a III-V semiconductor above the n-type layer; an active layer formed of a III-V semiconductor above the n-type guide layer; a p-type first guide layer formed of a III-V semiconductor above the active layer; a p-type contact layer formed of a III-V semiconductor above the p-type first guide layer; and an concavo-convex layer formed of a III-V semiconductor between the p-type first guide layer and the p-type contact layer. The concavo-convex layer has concave portions and convex portions which are alternately and regularly arranged at a top face thereof, and has lower p-type impurity concentration than that of the p-type contact layer.
摘要翻译：半导体发光元件包括：由III-V族半导体形成的{0001} n型半导体衬底，其倾斜角度在0°至45°的范围内，并且其为在倾斜角度为0°至10°的范围内成为<11-20>方向; 在n型半导体衬底上由III-V半导体形成的n型层; 由n型层上方的III-V族半导体形成的n型引导层; 由n型引导层上方的III-V族半导体形成的有源层; 由有源层上方的III-V族半导体形成的p型第一引导层; p型接触层，其由p型第一引导层上方的III-V族半导体形成; 以及在p型第一引导层和p型接触层之间由III-V族半导体形成的凹凸层。该凹凸层具有在顶面交替规则地配置的凹部和凸部，并且p型杂质浓度比p型接触层低。

10. 发明授权

US6118801A Gallium nitride-based compound semiconductor laser and method of manufacturing the same 有权
标题翻译：氮化镓系化合物半导体激光器及其制造方法
公开(公告)号：US6118801A
公开(公告)日：2000-09-12
申请号：US373624
申请日：1999-08-13
申请人： Masayuki Ishikawa , Masahiro Yamamoto , Shinya Nunoue , Johji Nishio , Genichi Hatakoshi , Hidetoshi Fujimoto
发明人： Masayuki Ishikawa , Masahiro Yamamoto , Shinya Nunoue , Johji Nishio , Genichi Hatakoshi , Hidetoshi Fujimoto
IPC分类号： H01S5/02 , H01S5/042 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/30 , H01S5/32 , H01S5/323 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/2202 , H01S5/2231 , H01S5/32341 , H01S5/34333 , H01S2304/04 , H01S5/0213 , H01S5/0421 , H01S5/0422 , H01S5/0425 , H01S5/2063 , H01S5/2205 , H01S5/2216 , H01S5/222 , H01S5/2224 , H01S5/2227 , H01S5/2232 , H01S5/3063 , H01S5/3211 , H01S5/3213
摘要： A gallium nitride-based compound semiconductor laser has a double-heterojunction structure, in which an active layer is sandwiched between cladding layers, on a sapphire substrate. A GaN current blocking layer having a striped opening portion is formed on the p-cladding layer. A p-GaN buried layer and a contact layer through which a current is injected into the opening portion of the current blocking layer and which are larger in area than the opening portion are formed. The active layer has a multiple quantum well structure constituted by a cyclic structure formed by cyclically stacking two types of InGaAlN layers which have different band gaps and are 10 nm or more thick.
摘要翻译：氮化镓系化合物半导体激光器在蓝宝石衬底上具有双层异质结结构，其中有源层夹在包层之间。在p-包层上形成具有条纹开口部分的GaN电流阻挡层。形成p-GaN掩埋层和电流注入到电流阻挡层的开口部分并且面积大于开口部分的接触层。有源层具有通过循环堆叠具有不同带隙并且为10nm以上厚度的两种类型的InGaAlN层形成的循环结构构成的多量子阱结构。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式