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1. 发明授权

US4467309A High temperature thermistor 失效
标题翻译：高温热敏电阻
公开(公告)号：US4467309A
公开(公告)日：1984-08-21
申请号：US371571
申请日：1982-04-26
申请人： Yasuo Matsushita , Kousuke Nakamura , Mitsuru Ura
发明人： Yasuo Matsushita , Kousuke Nakamura , Mitsuru Ura
IPC分类号： C04B35/565 , C04B35/575 , H01C7/04
CPC分类号： C04B35/575 , C04B35/565 , H01C7/04
摘要： A high-temperature thermistor comprising, a polycrystalline sintered body consisting essentially of 0.1-8 weight percents of at least one kind selected from the group consisting of Be, BeO, Be.sub.2 C, B, BN, B.sub.2 O.sub.3 and B.sub.4 C which weight percents are calculated as the amount of only Be or B single substance from net amount, the balance SiC, and the inevitable impurities having not more than 2 weight percents of SiO.sub.2, not more than 0.1 weight percent of Al, not more than 0.2 weight percents of Fe, not more than 1 weight percent of Si, and not more than 0.4 weights percents of free carbon, a pair of electrode provided on the surfaces of the sintered body, and lead wires each connected to the respective electrodes, and a method of producing same.
摘要翻译：一种高温热敏电阻器，其特征在于，包括：基本上由0.1-8重量％的至少一种选自Be，BeO，Be2C，B，BN，B2O3和B4C组成的多晶烧结体，所述重量百分数计算为量为单纯的Be或B单一物质，余量为SiC，不可避免的杂质为不超过2重量％的SiO 2，不超过0.1重量％的Al，不超过0.2重量％的Fe，不超过 1重量％以上，不超过0.4重量％的游离碳，设置在烧结体表面的一对电极和各自连接到各个电极的引线及其制造方法。

2. 发明授权

US4585706A Sintered aluminum nitride semi-conductor device 失效
标题翻译：烧结氮化铝半导体器件
公开(公告)号：US4585706A
公开(公告)日：1986-04-29
申请号：US769302
申请日：1985-08-26
申请人： Yukio Takeda , Satoru Ogihara , Mitsuru Ura , Kousuke Nakamura , Tadamichi Asai , Tokio Ohkoshi , Yasuo Matsushita , Kunihiro Maeda
发明人： Yukio Takeda , Satoru Ogihara , Mitsuru Ura , Kousuke Nakamura , Tadamichi Asai , Tokio Ohkoshi , Yasuo Matsushita , Kunihiro Maeda
IPC分类号： C22C29/16 , C04B35/581 , H01L21/318 , H01L23/15 , H01L29/12 , B32B15/04
CPC分类号： H01L21/318 , C04B35/581 , H01L23/15 , H01L2224/45124 , H01L2224/48472 , H01L24/45 , H01L24/48 , H01L2924/01004 , H01L2924/01014 , H01L2924/0102 , H01L2924/01039 , H01L2924/14 , Y10T428/12528 , Y10T428/12576 , Y10T428/12583 , Y10T428/12674
摘要： A semi-conductor device comprising sintered aluminum nitride having a high thermal conductivity, which comprises at least 65% by weight of aluminum nitride, and at least one of beryllium, a beryllium compound, lithium and a lithium compound.
摘要翻译：包括具有高热导率的烧结氮化铝的半导体器件，其包含至少65重量％的氮化铝，以及铍，铍化合物，锂和锂化合物中的至少一种。

3. 发明授权

US4651192A Ceramic packaged semiconductor device 失效
标题翻译：陶瓷封装半导体器件
公开(公告)号：US4651192A
公开(公告)日：1987-03-17
申请号：US751587
申请日：1985-07-03
申请人： Yasuo Matsushita , Kousuke Nakamura , Mitsuru Ura , Fumiyuki Kobayashi
发明人： Yasuo Matsushita , Kousuke Nakamura , Mitsuru Ura , Fumiyuki Kobayashi
IPC分类号： H01L23/34 , H01L23/057 , H01L23/08 , H01L23/15 , H01L23/36 , H01L23/14 , H01L23/02
CPC分类号： H01L23/057 , H01L23/15 , H01L2224/32188 , H01L2224/451 , H01L2224/48091 , H01L2224/48247 , H01L2224/48464 , H01L2224/73265 , H01L24/45 , H01L24/48 , H01L2924/01004 , H01L2924/01013 , H01L2924/01014 , H01L2924/01025 , H01L2924/01029 , H01L2924/15153 , H01L2924/15165 , H01L2924/1532 , H01L2924/16152 , H01L2924/16195
摘要： A semiconductor device with a semiconductor element encased in a hollow ceramic package. The portion of the package at which the semiconductor element is disposed is formed from SiC admixed with Be or a compound of Be.
摘要翻译：具有封装在中空陶瓷封装中的半导体元件的半导体器件。半导体元件配置的封装部分由与Be或Be化合物混合的SiC形成。

4. 发明授权

US4540673A Sintered aluminum nitride and semi-conductor device using the same 失效
标题翻译：烧结氮化铝和半导体器件采用相同的方法
公开(公告)号：US4540673A
公开(公告)日：1985-09-10
申请号：US373150
申请日：1982-04-29
申请人： Yukio Takeda , Satoru Ogihara , Mitsuru Ura , Kousuke Nakamura , Tadamichi Asai , Tokio Ohkoshi , Yasuo Matsushita , Kunihiro Maeda
发明人： Yukio Takeda , Satoru Ogihara , Mitsuru Ura , Kousuke Nakamura , Tadamichi Asai , Tokio Ohkoshi , Yasuo Matsushita , Kunihiro Maeda
IPC分类号： C22C29/16 , C04B35/581 , H01L21/318 , H01L23/15 , C04B35/58
CPC分类号： H01L21/318 , C04B35/581 , H01L23/15 , H01L2224/45124 , H01L2224/48472 , H01L24/45 , H01L24/48 , H01L2924/01004 , H01L2924/01014 , H01L2924/0102 , H01L2924/01039 , H01L2924/14 , Y10T428/12528 , Y10T428/12576 , Y10T428/12583 , Y10T428/12674
摘要： Sintered aluminum nitride having a high thermal conductivity, which comprises at least 65% by weight of aluminum nitride, and at least one of beryllium, a beryllium compound, lithium and a lithium compound, and a semi-conductor device using the same.
摘要翻译：具有高热导率的烧结氮化铝，其包含至少65重量％的氮化铝，以及铍，铍化合物，锂和锂化合物中的至少一种，以及使用其的半导体器件。

5. 发明授权

US4517584A Ceramic packaged semiconductor device 失效
标题翻译：陶瓷封装半导体器件
公开(公告)号：US4517584A
公开(公告)日：1985-05-14
申请号：US448592
申请日：1982-12-10
申请人： Yasuo Matsushita , Kousuke Nakamura , Mitsuru Ura
发明人： Yasuo Matsushita , Kousuke Nakamura , Mitsuru Ura
IPC分类号： H01L23/057 , H01L23/08 , H01L23/15 , H01L23/34 , H01L23/36 , H01L23/14
CPC分类号： H01L23/15 , H01L23/057 , H01L23/08 , H01L2224/45124 , H01L2224/48247 , H01L2224/73265 , H01L24/45 , H01L24/48 , H01L2924/01004 , H01L2924/0102 , H01L2924/01025 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/14 , H01L2924/15153 , H01L2924/1517 , H01L2924/1532 , H01L2924/16152
摘要： A semiconductor device with a semiconductor element encased in a hollow ceramic package. The portion of the package at which the semiconductor element is disposed is formed from a SiC-based substrate containing Be or a compound of Be with a thin SiO.sub.2 layer being capable of reacting with glass provided thereon and with a glass layer or a thin film circuit on the SiO.sub.2 layer.
摘要翻译：具有封装在中空陶瓷封装中的半导体元件的半导体器件。包含半导体元件的部分由含有Be或具有薄SiO 2层的Be化合物的SiC基材料形成，该SiO 2层能够与设置在其上的玻璃反应并与玻璃层或薄膜电路在SiO2层上。

6. 发明授权

US4571610A Semiconductor device having electrically insulating substrate of SiC 失效
标题翻译：具有SiC电绝缘基板的半导体器件
公开(公告)号：US4571610A
公开(公告)日：1986-02-18
申请号：US450566
申请日：1982-12-16
申请人： Yasuo Matsushita , Yukio Takeda , Kousuke Nakamura , Tokio Ohkoshi
发明人： Yasuo Matsushita , Yukio Takeda , Kousuke Nakamura , Tokio Ohkoshi
IPC分类号： C04B35/565 , C04B35/575 , H01B3/12 , H01L21/48 , H05K1/03 , H01L23/36 , H01L23/08 , H01L23/14 , H01L23/54
CPC分类号： C04B35/575 , C04B35/565 , H01B3/12 , H01L21/4807 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/73265 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/0102 , H01L2924/01033 , H01L2924/01046 , H01L2924/01079 , H01L2924/0132 , H05K1/0306
摘要： Disclosed are semiconductor devices in which an electrical insulating substrate is made of a sintered silicon carbide body having thermal conductivity of at least 0.4 cal/cm.multidot.sec.multidot..degree.C. at 25.degree. C., electrical resistivity of at least 10.sup.7 ohm.multidot.cm at 25.degree. C. and coefficient of thermal expansion of 3.3.about.4.times.10.sup.-6 /.degree.C. at 25.degree. C. to 300.degree. C.

7. 发明授权

US4370421A Electrically insulating substrate and a method of making such a substrate 失效
标题翻译：电绝缘基板和制造这种基板的方法
公开(公告)号：US4370421A
公开(公告)日：1983-01-25
申请号：US203554
申请日：1980-11-05
申请人： Yasuo Matsushita , Yukio Takeda , Kousuke Nakamura , Tokio Okoshi
发明人： Yasuo Matsushita , Yukio Takeda , Kousuke Nakamura , Tokio Okoshi
IPC分类号： C04B35/565 , C04B35/575 , H01B3/12 , H01L21/48 , H05K1/03 , C04B35/56 , C22C29/00
CPC分类号： C04B35/575 , C04B35/565 , H01B3/12 , H01L21/4807 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/73265 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/0102 , H01L2924/01033 , H01L2924/01046 , H01L2924/01079 , H01L2924/0132 , H05K1/0306
摘要： From 0.1 to 3.5% by weight of beryllium oxide powder, calculated as beryllium, is added to silicon carbide powder containing up to 0.1% by weight of aluminum, up to 0.1% by weight of boron and up to 0.4% by weight of free carbon, and the mixed powder is pressure-molded. The resulting molded article is heated to a temperature of 1,850.degree. C. to 2,500.degree. C. till there is obtained a sintered body having at least 90% relative density of silicon carbide. Thus, the sintered body having thermal conductivity of at least 0.4 cal/cm.sec..degree. C. at 25.degree. C., electrical resistivity of at least 10.sup.7 Ohm.cm at 25.degree. C. and coefficient of thermal expansion of 3.3.about.4.times.10.sup.-6 /.degree.C. at 25.degree. C. to 300.degree. C. can be obtained.
摘要翻译：将0.1至3.5重量％的以铍计算的氧化铍粉末加入到含有至多0.1重量％的铝，至多0.1重量％的硼和至多0.4重量％的游离碳的碳化硅粉末，混合粉末进行加压成形。将所得模制品加热至1850℃至2500℃的温度，直到得到具有至少90％的碳化硅相对密度的烧结体。因此，具有至少0.4cal / cm·sec的热导率的烧结体。在25℃下，25℃下的电阻率至少为107欧姆·厘米，在25℃至300℃下的热膨胀系数为3.3×10-6 /℃。获得。

8. 发明授权

US4528121A Electroconductive ceramics 失效
标题翻译：导电陶瓷
公开(公告)号：US4528121A
公开(公告)日：1985-07-09
申请号：US546094
申请日：1983-10-27
申请人： Yasuo Matsushita , Kousuke Nakamura , Tetuo Kosugi
发明人： Yasuo Matsushita , Kousuke Nakamura , Tetuo Kosugi
IPC分类号： C04B35/10 , C04B35/111 , C04B35/56 , C04B35/58 , F23Q7/22 , H01B1/08 , H01B1/14 , H01C7/02 , H05B3/14 , H01B1/04 , H01B1/06
CPC分类号： C04B35/58 , C04B35/111 , C04B35/56 , C04B35/5607 , C04B35/5611 , C04B35/5622 , C04B35/58014 , C04B35/58028 , C04B35/58064 , C04B35/58071 , C04B35/645 , F23Q7/22 , H01B1/14 , H01C7/022 , H05B3/141
摘要： Electroconductive ceramic materials with high density, high mechanical strength, high endurance to repeated current supply and excellent thermal shock resistance can be obtained by mixing 5 to 70 parts by weight of Al.sub.2 O.sub.3 or alumina ceramic materials containing 95% by weight or more of Al.sub.2 O.sub.3 and 30 to 95 parts by weight of at least one electroconductive material selected from of ZrB.sub.2, ZrC, ZrN, ZrSi.sub.2, TaB.sub.2, TaC, TaN, TaSi.sub.2, TiB.sub.2, TiC, TiN, Mo.sub.2 B.sub.5 and MoSi.sub.2 adding a molding binder, molding the mixture and sintering the molded mixture. The electroconductive ceramic is usable for heaters, glow plug heaters, electrical gas ignitors, kerosine gasifying burners, and electrodes or conductors for water processing or dialysis.
摘要翻译：通过混合5〜70重量份含有95重量％以上的Al 2 O 3和30重量％的Al 2 O 3或氧化铝陶瓷材料，可以获得具有高密度，高机械强度，高反复电流供应耐久性和优异耐热冲击性的导电陶瓷材料至95重量份的选自ZrB2，ZrC，ZrN，ZrSi2，TaB2，TaC，TaN，TaSi2，TiB2，TiC，TiN，Mo2B5和MoSi2中的至少一种导电材料，加入成型粘合剂，将混合物成型并烧结模制混合物。导电陶瓷可用于加热器，电热塞加热器，电气气体点火器，煤油气化燃烧器，以及用于水处理或透析的电极或导体。

9. 发明授权

US4923829A Composite ceramics and method of making the same 失效
标题翻译：复合陶瓷及其制作方法
公开(公告)号：US4923829A
公开(公告)日：1990-05-08
申请号：US312300
申请日：1989-02-17
申请人： Yoshiyuki Yasutomi , Yasuo Matsushita , Kousuke Nakamura
发明人： Yoshiyuki Yasutomi , Yasuo Matsushita , Kousuke Nakamura
IPC分类号： C04B35/584 , C04B35/56 , C04B35/58 , C04B35/591 , C04B35/80 , C04B38/06 , C22C29/00 , C22C49/00
CPC分类号： C04B35/58014 , C04B35/5607 , C04B35/5611 , C04B35/5622 , C04B35/5626 , C04B35/58007 , C04B35/58028 , C04B35/58064 , C04B35/58071 , C04B35/58078 , C04B35/58092 , C04B35/584 , C04B35/591 , C04B35/62295 , C04B35/806 , C04B38/0635 , C22C29/00 , C22C49/00
摘要： Composite ceramic materials and a method of the same are disclosed, in which a ceramic material mainly containing silicon nitride, and at least one compound selected from a group consisting of nitrides, carbides, borides, silicides, oxides and oxynitrides of elements belonging to IIIa, IIIb, IVa, IBb, Va, VIa and VIII are combined to form a sintered body, and particles and whiskers of the ceramic material and compound are interlocked with each other and fixed so that the sintered body has a porosity of 5 to 30%. In the above composite ceramics, the particle of the compound are coupled with each other through the whisker or particle of the ceramic material. Accordingly, the composite ceramics are small in charge rate of size due to sintering, and are excellent in tenacity, heat resisting property and thermal shock resisting property. Further, the resistivity of the sintered body can be varied by changing the mixture ratio of ceramic material and compound.
摘要翻译：公开了复合陶瓷材料及其制造方法，其中主要含有氮化硅的陶瓷材料和选自属于IIIa的元素的氮化物，碳化物，硼化物，硅化物，氧化物和氮氧化物中的至少一种化合物，将IIIb，IVa，IBb，Va，VIa和VIII组合形成烧结体，并将陶瓷材料和化合物的颗粒和晶须彼此互锁并固定，使得烧结体的孔隙率为5〜30％。在上述复合陶瓷中，化合物的颗粒通过陶瓷材料的晶须或颗粒相互耦合。因此，复合陶瓷由于烧结而具有小的电荷率，并且韧性，耐热性和耐热冲击性优异。此外，可以通过改变陶瓷材料和化合物的混合比来改变烧结体的电阻率。

10. 发明授权

US4065971A Semiconductor pressure transducer 失效
标题翻译：半导体压力传感器
公开(公告)号：US4065971A
公开(公告)日：1978-01-03
申请号：US701531
申请日：1976-07-01
申请人： Michitaka Shimazoe , Kousuke Nakamura , Yasuo Matsushita , Satoshi Shimada , Kazuji Yamada , Yukio Takahashi
发明人： Michitaka Shimazoe , Kousuke Nakamura , Yasuo Matsushita , Satoshi Shimada , Kazuji Yamada , Yukio Takahashi
IPC分类号： H01L29/84 , G01L9/00 , G01L9/06
CPC分类号： G01L9/0054
摘要： A semiconductor pressure transducer includes a monocrystalline semiconductor diaphragm, the outer edges of which are fixed. When subjected to pressure, the transducer produces radial strains of opposite polarity in a central portion thereof and a portion surrounding the central portion close to the edge of the strain inducing region. The diaphragm contains a plurality of elongated resistances formed of semiconductor material of the same conductivity type which are electrically isolated from the diaphragm, per se. Resistances of an individual set which lie in proximity to one another are combined in the form of a bridge. The longitudinal direction of resistances forming one set of opposing arms of the bridge extend along axes of the same crystal system as the longitudinal direction of the elongated resistances forming the other set of opposing arms of the bridge. However, the longitudinal directions of the separate sets of resistances forming the opposing arms of the bridge lie in directions so that they do not orthogonally intersect each other.
摘要翻译：半导体压力传感器包括其外边缘固定的单晶半导体膜片。当经受压力时，换能器在其中心部分产生相反极性的径向应变，并且围绕中心部分的部分靠近应变诱导区域的边缘产生。隔膜包含由与膜片电气隔离的相同导电类型的半导体材料形成的多个细长电阻。位于彼此靠近的单个组的电阻以桥的形式组合。形成桥的一组相对臂的电阻的纵向方向沿与构成桥的另一组相对臂的细长电阻的纵向相同的晶体系的轴线延伸。然而，形成桥的相对臂的单独的电阻组的纵向方向在方向上，使得它们不会彼此正交相交。

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