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1. 发明授权

US4370421A Electrically insulating substrate and a method of making such a substrate 失效
标题翻译：电绝缘基板和制造这种基板的方法
公开(公告)号：US4370421A
公开(公告)日：1983-01-25
申请号：US203554
申请日：1980-11-05
申请人： Yasuo Matsushita , Yukio Takeda , Kousuke Nakamura , Tokio Okoshi
发明人： Yasuo Matsushita , Yukio Takeda , Kousuke Nakamura , Tokio Okoshi
IPC分类号： C04B35/565 , C04B35/575 , H01B3/12 , H01L21/48 , H05K1/03 , C04B35/56 , C22C29/00
CPC分类号： C04B35/575 , C04B35/565 , H01B3/12 , H01L21/4807 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/73265 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/0102 , H01L2924/01033 , H01L2924/01046 , H01L2924/01079 , H01L2924/0132 , H05K1/0306
摘要： From 0.1 to 3.5% by weight of beryllium oxide powder, calculated as beryllium, is added to silicon carbide powder containing up to 0.1% by weight of aluminum, up to 0.1% by weight of boron and up to 0.4% by weight of free carbon, and the mixed powder is pressure-molded. The resulting molded article is heated to a temperature of 1,850.degree. C. to 2,500.degree. C. till there is obtained a sintered body having at least 90% relative density of silicon carbide. Thus, the sintered body having thermal conductivity of at least 0.4 cal/cm.sec..degree. C. at 25.degree. C., electrical resistivity of at least 10.sup.7 Ohm.cm at 25.degree. C. and coefficient of thermal expansion of 3.3.about.4.times.10.sup.-6 /.degree.C. at 25.degree. C. to 300.degree. C. can be obtained.
摘要翻译：将0.1至3.5重量％的以铍计算的氧化铍粉末加入到含有至多0.1重量％的铝，至多0.1重量％的硼和至多0.4重量％的游离碳的碳化硅粉末，混合粉末进行加压成形。将所得模制品加热至1850℃至2500℃的温度，直到得到具有至少90％的碳化硅相对密度的烧结体。因此，具有至少0.4cal / cm·sec的热导率的烧结体。在25℃下，25℃下的电阻率至少为107欧姆·厘米，在25℃至300℃下的热膨胀系数为3.3×10-6 /℃。获得。

2. 发明授权

US4571610A Semiconductor device having electrically insulating substrate of SiC 失效
标题翻译：具有SiC电绝缘基板的半导体器件
公开(公告)号：US4571610A
公开(公告)日：1986-02-18
申请号：US450566
申请日：1982-12-16
申请人： Yasuo Matsushita , Yukio Takeda , Kousuke Nakamura , Tokio Ohkoshi
发明人： Yasuo Matsushita , Yukio Takeda , Kousuke Nakamura , Tokio Ohkoshi
IPC分类号： C04B35/565 , C04B35/575 , H01B3/12 , H01L21/48 , H05K1/03 , H01L23/36 , H01L23/08 , H01L23/14 , H01L23/54
CPC分类号： C04B35/575 , C04B35/565 , H01B3/12 , H01L21/4807 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/73265 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/0102 , H01L2924/01033 , H01L2924/01046 , H01L2924/01079 , H01L2924/0132 , H05K1/0306
摘要： Disclosed are semiconductor devices in which an electrical insulating substrate is made of a sintered silicon carbide body having thermal conductivity of at least 0.4 cal/cm.multidot.sec.multidot..degree.C. at 25.degree. C., electrical resistivity of at least 10.sup.7 ohm.multidot.cm at 25.degree. C. and coefficient of thermal expansion of 3.3.about.4.times.10.sup.-6 /.degree.C. at 25.degree. C. to 300.degree. C.

3. 发明授权

US4540673A Sintered aluminum nitride and semi-conductor device using the same 失效
标题翻译：烧结氮化铝和半导体器件采用相同的方法
公开(公告)号：US4540673A
公开(公告)日：1985-09-10
申请号：US373150
申请日：1982-04-29
申请人： Yukio Takeda , Satoru Ogihara , Mitsuru Ura , Kousuke Nakamura , Tadamichi Asai , Tokio Ohkoshi , Yasuo Matsushita , Kunihiro Maeda
发明人： Yukio Takeda , Satoru Ogihara , Mitsuru Ura , Kousuke Nakamura , Tadamichi Asai , Tokio Ohkoshi , Yasuo Matsushita , Kunihiro Maeda
IPC分类号： C22C29/16 , C04B35/581 , H01L21/318 , H01L23/15 , C04B35/58
CPC分类号： H01L21/318 , C04B35/581 , H01L23/15 , H01L2224/45124 , H01L2224/48472 , H01L24/45 , H01L24/48 , H01L2924/01004 , H01L2924/01014 , H01L2924/0102 , H01L2924/01039 , H01L2924/14 , Y10T428/12528 , Y10T428/12576 , Y10T428/12583 , Y10T428/12674
摘要： Sintered aluminum nitride having a high thermal conductivity, which comprises at least 65% by weight of aluminum nitride, and at least one of beryllium, a beryllium compound, lithium and a lithium compound, and a semi-conductor device using the same.
摘要翻译：具有高热导率的烧结氮化铝，其包含至少65重量％的氮化铝，以及铍，铍化合物，锂和锂化合物中的至少一种，以及使用其的半导体器件。

4. 发明授权

US4585706A Sintered aluminum nitride semi-conductor device 失效
标题翻译：烧结氮化铝半导体器件
公开(公告)号：US4585706A
公开(公告)日：1986-04-29
申请号：US769302
申请日：1985-08-26
申请人： Yukio Takeda , Satoru Ogihara , Mitsuru Ura , Kousuke Nakamura , Tadamichi Asai , Tokio Ohkoshi , Yasuo Matsushita , Kunihiro Maeda
发明人： Yukio Takeda , Satoru Ogihara , Mitsuru Ura , Kousuke Nakamura , Tadamichi Asai , Tokio Ohkoshi , Yasuo Matsushita , Kunihiro Maeda
IPC分类号： C22C29/16 , C04B35/581 , H01L21/318 , H01L23/15 , H01L29/12 , B32B15/04
CPC分类号： H01L21/318 , C04B35/581 , H01L23/15 , H01L2224/45124 , H01L2224/48472 , H01L24/45 , H01L24/48 , H01L2924/01004 , H01L2924/01014 , H01L2924/0102 , H01L2924/01039 , H01L2924/14 , Y10T428/12528 , Y10T428/12576 , Y10T428/12583 , Y10T428/12674
摘要： A semi-conductor device comprising sintered aluminum nitride having a high thermal conductivity, which comprises at least 65% by weight of aluminum nitride, and at least one of beryllium, a beryllium compound, lithium and a lithium compound.
摘要翻译：包括具有高热导率的烧结氮化铝的半导体器件，其包含至少65重量％的氮化铝，以及铍，铍化合物，锂和锂化合物中的至少一种。

5. 发明授权

US4561010A Electrically insulating silicon carbide sintered body 失效
标题翻译：电绝缘碳化硅烧结体
公开(公告)号：US4561010A
公开(公告)日：1985-12-24
申请号：US446514
申请日：1982-12-03
申请人： Satoru Ogihara , Yukio Takeda , Kunihiro Maeda , Kousuke Nakamura , Mitsuru Ura
发明人： Satoru Ogihara , Yukio Takeda , Kunihiro Maeda , Kousuke Nakamura , Mitsuru Ura
IPC分类号： C22C29/02 , C04B35/565 , C04B35/575 , H01B3/12 , H01L23/15 , H05K1/03 , H01L23/14 , H01L23/34 , H01L23/08
CPC分类号： C04B35/575 , C04B35/565 , H01B3/12 , H01L23/15 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L24/45 , H01L24/48 , H01L2924/01004 , H01L2924/01012 , H01L2924/01014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01021 , H01L2924/01025 , H01L2924/01037 , H01L2924/01039 , H01L2924/01046 , H01L2924/01055 , H01L2924/01057 , H01L2924/01066 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01087 , H01L2924/10253 , H01L2924/14 , H01L2924/1532 , H01L2924/16152 , H01L2924/19107 , H05K1/0306
摘要： A silicon carbide sintered body comprising silicon carbide as principal constituent, a first component for providing electrical insulating properties to said silicon carbide, said first component comprising at least one of metallic beryllium, beryllium compounds, boron and boron compounds and contained in a total amount of 0.01 to 3.5% by weight calculated as metal, and a second component which can further promote said silicon carbide sinterability provided by said first component and which does not diffuse easily in the particles of said silicon carbide, said second component comprising at least one substance selected from the Group I elements exclusive of hydrogen and francium, Group II elements exclusive of beryllium, radium and mercury, Group III elements exclusive of boron and aluminum, Group IV elements exclusive of carbon, Group V elements, Group VIa elements, Group VIIa elements Group VIII elements exclusive of iron, and compounds thereof, and contained in a total amount of 0.01 to 10% by weight, with the remainder substantially comprising silicon carbide. This silicon carbide sintered body has an electrical resistivity of 10.sup.7 .OMEGA..cm or above at room temperature and is also excellent in electrical insulating properties and can be advantageously used as substrates for semiconductor devices, etc.
摘要翻译：一种碳化硅烧结体，其包含碳化硅作为主要成分，用于向所述碳化硅提供电绝缘性能的第一组分，所述第一组分包含金属铍，铍化合物，硼和硼化合物中的至少一种，并且含有总量以金属计算为0.01〜3.5重量％的第二成分，以及可以进一步促进由所述第一成分提供的所述碳化硅烧结体并且不容易扩散在所述碳化硅颗粒中的第二成分，所述第二成分包含至少一种选自来自第一类元素，不包括氢和ium，第二类元素不包括铍，镭和汞，不包括硼和铝的III族元素，不包括碳的第IV族元素，V族元素，VIa族元素，VIIa族元素组不含铁的VIII元素及其化合物，其总量为0.0 1至10重量％，其余基本上包含碳化硅。该碳化硅烧结体在室温下的电阻率为107Ω·cm以上，电绝缘性也优异，可有利地用作半导体器件等的基板。

6. 发明授权

US07852614B2 Solid electrolytic capacitor and process for fabricating same 有权
标题翻译：固体电解电容器及其制造方法
公开(公告)号：US07852614B2
公开(公告)日：2010-12-14
申请号：US12314349
申请日：2008-12-09
申请人： Kazumasa Fujimoto , Hiromu Saito , Yasushi Yoshida , Yukio Takeda
发明人： Kazumasa Fujimoto , Hiromu Saito , Yasushi Yoshida , Yukio Takeda
IPC分类号： H01G9/00
CPC分类号： C25D11/12 , C25D11/08 , C25D11/16 , H01G9/045 , H01G9/055 , H01G9/151
摘要： The invention provides a solid electrolytic capacitor wherein the anode has a dielectric oxide film of a structure less susceptible to damage due to mechanical stresses and which is diminished in leakage current and less prone to short-circuiting, and a process for fabricating the capacitor. The capacitor of the invention comprises an anode of aluminum having a dielectric oxide film formed over a surface thereof from amorphous alumina, and is characterized in that a plurality of tunnel-shaped etching pits are formed in the anode. The process of the invention for fabricating the solid electrolytic capacitor includes the steps of forming a plurality of tunnel-shaped etching pits in an aluminum material, effecting anodic oxidation by immersing the aluminum material in an electrolytic solution containing oxalic acid or the like, and effecting anodic oxidation by immersing the aluminum material in an electrolytic solution containing boric acid or like inorganic acid or a salt thereof or containing adipic acid or like organic acid or a salt thereof and applying a voltage at least three times the rated voltage of the capacitor.
摘要翻译：本发明提供了一种固体电解电容器，其中阳极具有由于机械应力而不易损坏的结构的电介质氧化物膜，并且其漏电流减小并且不容易发生短路，以及制造电容器的工艺。本发明的电容器包括在非晶态氧化铝的表面上形成有电介质氧化膜的铝阳极，其特征在于在阳极中形成多个隧道状蚀刻坑。用于制造固体电解电容器的本发明的方法包括以下步骤：在铝材料中形成多个隧道状蚀刻凹坑，通过将铝材料浸入含有草酸等的电解液中进行阳极氧化，并实现通过将铝材料浸入含硼酸或类似无机酸或其盐或含有己二酸或类似有机酸或其盐的电解液中并施加电容器的额定电压的至少三倍的电压来进行阳极氧化。

7. 发明申请

US20060180474A1 Solid electrolytic capacitor and process for fabricating same 有权
公开(公告)号：US20060180474A1
公开(公告)日：2006-08-17
申请号：US11348329
申请日：2006-02-07
申请人： Kazumasa Fujimoto , Hiromu Saito , Yasushi Yoshida , Yukio Takeda
发明人： Kazumasa Fujimoto , Hiromu Saito , Yasushi Yoshida , Yukio Takeda
IPC分类号： C25D11/16
CPC分类号： C25D11/12 , C25D11/08 , C25D11/16 , H01G9/045 , H01G9/055 , H01G9/151
摘要： The invention provides a solid electrolytic capacitor wherein the anode has a dielectric oxide film of a structure less susceptible to damage due to mechanical stresses and which is diminished in leakage current and less prone to short-circuiting, and a process for fabricating the capacitor. The capacitor of the invention comprises an anode of aluminum having a dielectric oxide film formed over a surface thereof from amorphous alumina, and is characterized in that a plurality of tunnel-shaped etching pits are formed in the anode. The process of the invention for fabricating the solid electrolytic capacitor includes the steps of forming a plurality of tunnel-shaped etching pits in an aluminum material, effecting anodic oxidation by immersing the aluminum material in an electrolytic solution containing oxalic acid or the like, and effecting anodic oxidation by immersing the aluminum material in an electrolytic solution containing boric acid or like inorganic acid or a salt thereof or containing adipic acid or like organic acid or a salt thereof and applying a voltage at least three times the rated voltage of the capacitor.

8. 发明授权

US4986700A Buoyant force control apparatus for scuba diving 失效
标题翻译：用于水肺潜水的浮力控制装置
公开(公告)号：US4986700A
公开(公告)日：1991-01-22
申请号：US506261
申请日：1990-04-09
申请人： Yukio Takeda
发明人： Yukio Takeda
IPC分类号： B63C11/22 , B63C11/08
CPC分类号： B63C11/08
摘要： A buoyant force control apparatus for scuba diving is used being installed on a diver's suit. Air supply to an air chamber formed within the suit is done, by pushing operations of opening and closing the air supply valve, from an air tank. Alternately, the driver holds the air breathe-in port or mouth piece between teeth while pushing a valve shaft slidably installed in an air supply valve. Air exhaustion from the air chamber is carried out by pulling one of pull strings attached to the first and second exhaust valves, respectively secured to both half portions of the front part of the diver's suit at different levels so as to separate them from each other.
摘要翻译：用于水肺潜水的浮力控制装置被安装在潜水员套装上。通过从空气罐推动打开和关闭供气阀的操作来完成在衣服内形成的空气室的空气供应。或者，驾驶员在将可滑动地安装在供气阀中的阀轴推动的同时，将牙齿之间的空气吸入口或口部件保持在齿之间。通过拉动附接到第一和第二排气门的拉绳之一分别固定在潜水装置的前部的两个部分上，分别固定在潜水装置的前部的两个部分上以分离它们来进行从空气室排出的空气。

9. 发明授权

US4734802A Film magnetic head slider having a contacting portion containing zirconia and carbon 失效
标题翻译：薄膜磁头滑块具有含有氧化锆和碳的接触部分
公开(公告)号：US4734802A
公开(公告)日：1988-03-29
申请号：US782536
申请日：1985-10-01
申请人： Shinsuke Higuchi , Yukio Takeda , Shiro Iijima , Masaki Ohura , Sadanori Nagaike
发明人： Shinsuke Higuchi , Yukio Takeda , Shiro Iijima , Masaki Ohura , Sadanori Nagaike
IPC分类号： G11B5/127 , C04B35/486 , G11B5/10 , G11B5/60 , G11B5/187 , G11B15/64 , G11B17/32
CPC分类号： C04B35/486 , G11B5/10
摘要： A film magnetic slider which comprises a slider performing contact-start-stop actions on a recording medium and being provided with a film magnetic head device on the side end of the slider, at least the recording-medium-contacting part of the slider being made from a sintered material having a thermal conductivity of not more than 0.02 cal/cm.sec..degree.C. and an average crystal grain size of not more than 5 .mu.m has a good slidability on the recording medium and a good machinability and can improve the life of the recording medium.
摘要翻译：一种胶片磁性滑块，包括滑块，在记录介质上执行接触开始停止动作，并且在滑块的侧端设置有胶片磁头装置，至少使滑块的记录介质接触部分来自具有不大于0.02cal / cm·sec的热导率的烧结材料。 ℃，平均晶粒尺寸不大于5μm，在记录介质上具有良好的滑动性，并且具有良好的机械加工性，并且可以提高记录介质的使用寿命。

10. 发明授权

US4665532A Radio communication system 失效
标题翻译：无线通信系统
公开(公告)号：US4665532A
公开(公告)日：1987-05-12
申请号：US693341
申请日：1985-01-22
申请人： Eisuke Fukuda , Yukio Takeda , Yoshimasa Daido , Hiroshi Nakamura , Susumu Sasaki , Sadao Takenaka
发明人： Eisuke Fukuda , Yukio Takeda , Yoshimasa Daido , Hiroshi Nakamura , Susumu Sasaki , Sadao Takenaka
IPC分类号： H04L27/00 , H04L27/34 , H04L27/36 , H04L27/38 , H04L25/34 , H04B7/00
CPC分类号： H04L27/3827 , H04L27/34 , H04L27/345 , H04L27/362
摘要： A radio communication system using a QAM system. In the transmission system, the data of each channel to be transmitted is divided into data groups having frame slots. When the polarity of the mean value of a data summed in a present data group is the same as the polarity of the mean value of the deviation of all data group coming before, all data in the present data group is inverted, a direct current component and a lower frequency component near the direct current component are suppressed, and carrier waves are injected after encoding. In the receiving system, a decoder decodes a received signal to obtain the original data before the encoding by the transmission system.
摘要翻译：一种使用QAM系统的无线电通信系统。在传输系统中，要发送的每个信道的数据被划分为具有帧时隙的数据组。当在当前数据组中求和的数据的平均值的极性与所有数据组的偏差的平均值的极性相同时，本数据组中的所有数据都被反转，直流分量并且抑制直流成分附近的低频分量，编码后注入载波。在接收系统中，解码器对接收到的信号进行解码，以在传输系统进行编码之前获得原始数据。

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