会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Laser module and method for manufacturing the same
    • 激光模块及其制造方法
    • US07494286B2
    • 2009-02-24
    • US10534438
    • 2003-11-12
    • Akihiro MorikawaToshifumi YokoyamaYasuo KitaokaKazuhisa Yamamoto
    • Akihiro MorikawaToshifumi YokoyamaYasuo KitaokaKazuhisa Yamamoto
    • G02B6/36G02B6/12
    • G02B6/42G02B6/4239G02F1/3775H01S5/0092H01S5/02208H01S5/02252
    • Efficient coupling structures are important for the realization of reliable and economical integrated optical circuit applications. This paper presents a new approach for the simulation of an anisotropic plasma etching process in silicon based on a string point model as well as the realization and the results of etching processes in silicon, silicon dioxide, silicon oxinitride and silicon nitride which are fundamental for the fabrication of coupling structures. The connections to active and passive components were fabricated using plasma etching and deposition processes which are compatible with C-MOS or BIC-MOS technology. The realized waveguide-detector structures with vertical and horizontal silicon PIN-diodes exhibit efficiencies close to 90% for wavelength below 1.1 micrometers. The diodes can detect signals of modulation frequencies of more than 400 MHz due to horizontal light injection and capacitances less than 1 pF. Fiber-detector coupling structures with U-grooves for the fiber alignment containing such detectors show similar results. The necessary accuracy of the etched depth of the U-grooves for fiber-detector coupling is +/−2 micrometers in contrast to a fiber-waveguide coupling which requires a reproducible accuracy of the process better than 0.5 micrometers. A reduction of coupling losses due to the necessary close tolerances is accomplished by waveguide tapers. The simulation, realization and results for such structures are presented in the paper. Also laser diode—fiber connections require extremely close tolerances. The design of a micro-optical bench realized by plasma etching and a selfaligning soldering process is presented, which allows such tolerances.
    • 高效的耦合结构对于实现可靠且经济的集成光电路应用很重要。 本文提出了一种基于串点模型模拟硅中各向异性等离子体蚀刻工艺的新方法,以及硅,二氧化硅,氮氧化硅和氮化硅中蚀刻过程的实现和结果,这些都是基于 耦合结构的制造。 使用与C-MOS或BIC-MOS技术兼容的等离子体蚀刻和沉积工艺制造与主动和无源部件的连接。 实现的具有垂直和水平硅PIN二极管的波导检测器结构对于低于1.1微米的波长表现出接近90%的效率。 由于水平光注入和小于1 pF的电容,二极管可以检测超过400 MHz的调制频率信号。 具有用于包含这种检测器的光纤对准的U形槽的光纤检测器耦合结构显示相似的结果。 与光纤 - 波导耦合相比,用于光纤 - 检测器耦合的U形槽的蚀刻深度所需的精度为+/- 2微米,这需要该工艺的可重复精度优于0.5微米。 由于必要的紧公差导致的耦合损耗的减小是通过波导锥度实现的。 本文提出了这种结构的仿真,实现和结果。 激光二极管 - 光纤连接也需要极其公差。 提出了通过等离子体蚀刻和自对准焊接工艺实现的微光学台架的设计,其允许这种公差。
    • 2. 发明申请
    • Laser module and its fabrication method
    • 激光模组及其制作方法
    • US20060034570A1
    • 2006-02-16
    • US10534438
    • 2003-11-12
    • Akihiro MorikawaToshifumi YokoyamaYasuo KitaokaKazuhisa Yamamoto
    • Akihiro MorikawaToshifumi YokoyamaYasuo KitaokaKazuhisa Yamamoto
    • G02B6/36
    • G02B6/42G02B6/4239G02F1/3775H01S5/0092H01S5/02208H01S5/02252
    • A laser module includes: a sub-mount; a semiconductor laser secured to a surface of the sub-mount; and an optical waveguide device joined to the surface of the sub-mount by an adhesive layer so that the optical waveguide device is coupled optically with the semiconductor laser. A first groove is formed at the surface of the sub-mount at a region corresponding to an incident end side of the optical waveguide device, the first groove being formed parallel to an outgoing end face of the semiconductor laser with a predetermined space therefrom. The adhesive layer is formed so that an end of the adhesive layer on the incident end side of the optical waveguide device is positioned within a range from a position abutting with a distal edge of the first groove distant from the semiconductor laser to an inside of the first groove and does not contact with the outgoing end face of the semiconductor laser. Since the adhesive layer can be positioned within a preferable range, coupling misalignment resulting from distortion due to a temperature change can be suppressed.
    • 激光模块包括:子安装座; 半导体激光器,其固定到所述副安装座的表面; 以及通过粘合层与子座的表面接合的光波导器件,使得光波导器件与半导体激光器光耦合。 在与所述光波导装置的入射端侧对应的区域的所述副安装座的表面形成有第一槽,所述第一槽与所述半导体激光器的出射端面平行地形成有预定的间隔。 粘合剂层形成为使得光波导装置的入射端侧的粘合剂层的端部位于与远离半导体激光器的第一凹槽的远端边缘邻接的位置的范围内 并且不与半导体激光器的出射端面接触。 由于粘合剂层可以位于优选范围内,所以可以抑制由于温度变化引起的变形引起的耦合失准。
    • 5. 发明授权
    • Device and method for inspecting wavelength-variable semiconductor laser, and method for inspecting coherent source
    • 用于检测波长可变半导体激光器的装置和方法以及检查相干光源的方法
    • US07082146B2
    • 2006-07-25
    • US11197624
    • 2005-08-04
    • Yasuo KitaokaToshifumi YokoyamaKazuhisa Yamamoto
    • Yasuo KitaokaToshifumi YokoyamaKazuhisa Yamamoto
    • H01S3/10
    • G01J1/4257H01S5/0014H01S5/005H01S5/0092H01S5/06256
    • A method for easily and quickly evaluating the wavelength variability properties of a wavelength-variable semiconductor laser is provided. An inspection device includes a power source for supplying current to a wavelength-variable DBR semiconductor laser having an active region, a phase control region, and a DBR region, a photo-detector for detecting an output intensity of laser beam emitted from the wavelength-variable DBR semiconductor laser, and a transmission type wavelength-selection element that can be inserted into a light path from the wavelength-variable DBR semiconductor laser to the photo-detector. In a state where the transmission type wavelength-selection element is inserted into the light path from the wavelength-variable DBR semiconductor laser to the photo-detector, at least one of a phase current that is supplied to the phase control region and a DBR current that is supplied to the DBR region is changed with respect to a predetermined active current that is supplied to the active region, and the output intensity of the laser beam after the laser beam has passed through the transmission type wavelength-selection element is detected by the photo-detector.
    • 提供了一种容易且快速地评估波长可变半导体激光器的波长变异性的方法。 检查装置包括用于向具有有源区域的波长可变DBR半导体激光器提供电流的电源,相位控制区域和DBR区域,用于检测从波长范围发射的激光束的输出强度的光电检测器, 可变DBR半导体激光器和可以插入到从波长可变DBR半导体激光器到光检测器的光路中的透射型波长选择元件。 在将透射型波长选择元件从波长可变DBR半导体激光器插入到光检测器的光路中的状态下,提供给相位控制区域的相电流和DBR电流中的至少一个 提供给DBR区域的电压相对于提供给有源区域的预定有功电流而改变,并且激光束已经通过透射型波长选择元件之后的激光束的输出强度由 光电探测器。
    • 6. 发明申请
    • Device and method for inspecting wavelength-variable semiconductor laser, and method for inspecting coherent source
    • 用于检测波长可变半导体激光器的装置和方法以及检查相干光源的方法
    • US20050276288A1
    • 2005-12-15
    • US11197624
    • 2005-08-04
    • Yasuo KitaokaToshifumi YokoyamaKazuhisa Yamamoto
    • Yasuo KitaokaToshifumi YokoyamaKazuhisa Yamamoto
    • G01J1/42H01S3/10H01S5/00H01S5/06H01S5/0625
    • G01J1/4257H01S5/0014H01S5/005H01S5/0092H01S5/06256
    • A method for easily and quickly evaluating the wavelength variability properties of a wavelength-variable semiconductor laser is provided. An inspection device includes a power source for supplying current to a wavelength-variable DBR semiconductor laser having an active region, a phase control region, and a DBR region, a photo-detector for detecting an output intensity of laser beam emitted from the wavelength-variable DBR semiconductor laser, and a transmission type wavelength-selection element that can be inserted into a light path from the wavelength-variable DBR semiconductor laser to the photo-detector. In a state where the transmission type wavelength-selection element is inserted into the light path from the wavelength-variable DBR semiconductor laser to the photo-detector, at least one of a phase current that is supplied to the phase control region and a DBR current that is supplied to the DBR region is changed with respect to a predetermined active current that is supplied to the active region, and the output intensity of the laser beam after the laser beam has passed through the transmission type wavelength-selection element is detected by the photo-detector.
    • 提供了一种容易且快速地评估波长可变半导体激光器的波长变异性的方法。 检查装置包括用于向具有有源区域的波长可变DBR半导体激光器提供电流的电源,相位控制区域和DBR区域,用于检测从波长范围发射的激光束的输出强度的光电检测器, 可变DBR半导体激光器和可以插入到从波长可变DBR半导体激光器到光检测器的光路中的透射型波长选择元件。 在透射型波长选择元件从波长可变DBR半导体激光器插入到光检测器的光路中的状态下,提供给相位控制区域的相电流和DBR电流中的至少一个 提供给DBR区域的电压相对于提供给有源区域的预定有功电流而改变,并且激光束已经通过透射型波长选择元件之后的激光束的输出强度由 光电探测器。