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    • 9. 发明授权
    • Positive resist composition
    • 正抗蚀剂组成
    • US5407779A
    • 1995-04-18
    • US71409
    • 1993-06-04
    • Yasunori UetaniJun TomiokaHirotoshi Nakanishi
    • Yasunori UetaniJun TomiokaHirotoshi Nakanishi
    • G03F7/039G03F7/022H01L21/027G03F7/023G03F7/30
    • G03F7/022
    • A positive resist composition comprising an alkali-soluble resin and a light-sensitive quinonediazide material containing a quinonediazidesulfonic acid ester of at least one phenol compound represented by the following general formulas: ##STR1## wherein R.sub.1 represents hydrogen, halogen, or the like; R.sub.3 represents alkyl or phenyl; x represents 1-3; Q.sub.1 to Q.sub.12 represent hydrogen, alkyl or phenyl; and Z.sub.1 to Z.sub.5 represent the groups of the following formulas: ##STR2## wherein R.sub.2 is hydrogen, halogen or the like; R.sub.3 is as defined above; y is 1-3; and p is 0 or 1. This positive resist composition is excellent in the balance between properties such as resolution, profile, depth of focus, etc.
    • 一种正型抗蚀剂组合物,其包含碱溶性树脂和含有由以下通式表示的至少一种酚化合物的醌二叠氮磺酸酯的光敏醌二叠氮化物材料:(Ia)图像(Ib)< IMAGE> (Ⅰc)(Id)其中R1表示氢,卤素等; R3表示烷基或苯基; x表示1-3; Q1至Q12表示氢,烷基或苯基; Z 1〜Z 5分别表示下式的基团:其中,R 2为氢,卤素等; R3如上所定义; y为1-3; 并且p为0或1.该正性抗蚀剂组合物在分辨率,轮廓,焦深等性能之间的平衡方面是优异的。