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    • 5. 发明授权
    • Positive resist composition comprising a quinone diazide sulfonic acid
ester, a novolak resin and a polyphenol compound.
    • 包含醌二叠层磺酸酯,酚醛清漆树脂和多酚化合物的正型抗蚀剂组合物。
    • US5413895A
    • 1995-05-09
    • US931316
    • 1992-08-18
    • Jun TomiokaKoji KuwanaHirotoshi NakanishiYasunori UetaniAyako Ida
    • Jun TomiokaKoji KuwanaHirotoshi NakanishiYasunori UetaniAyako Ida
    • G03F7/022H01L21/027G03F7/023G03F7/30
    • G03F7/0226
    • A positive resist composition comprising an alkali-soluble resin containing a novolak resin which is obtained by a condensation reaction of a phenol compound and a carbonyl compound and has an area in a GPC pattern of a range in that a molecular weight as converted to polystyrene is not larger than 900 not exceeding 20% of a whole pattern area excluding the unreacted phenol compound, a quinonediazide compound and a polyphenol compound of the formula: ##STR1## in which R.sub.1 and R.sub.2 are independently a hydrogen atom, a halogen atom, an alkyl group, an alkoxy group or a group: --OCOR.sub.3 in which R.sub.3 is an alkyl group or a phenyl group, x and y are independently an integer of 1 to 3, and m is an integer of 0 to 4, wherein a weight ratio of said polyphenol compound (I) to said alkali-soluble resin is from 3:10 to 5:10, which is excellent in heat resistance, sensitivity, resolution and a depth of focus and leaves no scum after development.
    • 含有通过酚化合物与羰基化合物的缩合反应得到的酚醛清漆树脂的碱溶性树脂的正型抗蚀剂组合物,其GPC图案的面积为转化为聚苯乙烯的分子量的范围为 不大于900不超过除了未反应的酚化合物之外的整个图案区域的20%,醌二叠氮化合物和下式的多酚化合物:其中R 1和R 2独立地为氢原子,卤素原子 ,烷基,烷氧基或基团:其中R 3为烷基或苯基的-OCOR 3,x和y独立地为1〜3的整数,m为0〜4的整数,其中, 所述多酚化合物(I)与所述碱溶性树脂的重量比为3:10〜5:10,耐热性,灵敏度,分辨率和焦深均优异,显影后无浮渣。
    • 6. 发明授权
    • Quinone diazide photoresist composition containing alkali-soluble resin
and an ultraviolet ray absorbing dye
    • 醌基二氮化物光刻胶组合物,含有碱溶性树脂和紫外线吸收染料
    • US5362598A
    • 1994-11-08
    • US132230
    • 1993-10-06
    • Naoki TakeyamaYasunori UetaniHirotoshi NakanishiRyotaro Hanawa
    • Naoki TakeyamaYasunori UetaniHirotoshi NakanishiRyotaro Hanawa
    • G03F7/09G03F7/023G03C1/61
    • G03F7/091
    • A photoresist composition which comprises a compound of the general formula: ##STR1## wherein R.sub.1, R.sub.2 and R.sub.3 are the same or different and represent a hydrogen atom, a hydroxyl group, --OCOR.sub.4, --O--R.sub.5, --OSi(R.sub.6).sub.3, a halogen atom, an optionally substituted alkyl group, an optionally substituted alkenyl group, an optionally substituted phenyl group or an optionally substituted aralkyl group; R.sub.4, R.sub.5 and R.sub.6 represent an optionally substituted lower alkyl group or an optionally substituted phenyl group; X and Y are the same or different and represent --CN, --COOR.sub.7, --CONR.sub.8 R.sub.9, ##STR2## R.sub.7 represents an alkyl group; R.sub.8 and R.sub.9 are the same or different and represent a hydrogen atom, an optionally substituted alkyl or phenyl group; R.sub.10 represents a hydrogen atom, an optionally substituted alkyl group or a hydroxyl group; and a is a number of 1 to 2, which is suitable for forming fine patterns having high resolution on a substrate having high reflectance.
    • 一种光致抗蚀剂组合物,其包含以下通式的化合物:其中R 1,R 2和R 3相同或不同,表示氢原子,羟基,-OCOR 4,-O-R 5,-OSi( R6)3,卤素原子,任选取代的烷基,任选取代的烯基,任选取代的苯基或任选取代的芳烷基; R4,R5和R6表示任选取代的低级烷基或任意取代的苯基; X和Y相同或不同,表示-CN,-COOR 7,-CONR 8 R 9,R 7表示烷基; R8和R9相同或不同,表示氢原子,任意取代的烷基或苯基; R 10表示氢原子,任选取代的烷基或羟基; a为1〜2,适合于在高反射率的基板上形成分辨率高的精细图案。
    • 7. 发明授权
    • Positive resist composition
    • 正抗蚀剂组成
    • US5407779A
    • 1995-04-18
    • US71409
    • 1993-06-04
    • Yasunori UetaniJun TomiokaHirotoshi Nakanishi
    • Yasunori UetaniJun TomiokaHirotoshi Nakanishi
    • G03F7/039G03F7/022H01L21/027G03F7/023G03F7/30
    • G03F7/022
    • A positive resist composition comprising an alkali-soluble resin and a light-sensitive quinonediazide material containing a quinonediazidesulfonic acid ester of at least one phenol compound represented by the following general formulas: ##STR1## wherein R.sub.1 represents hydrogen, halogen, or the like; R.sub.3 represents alkyl or phenyl; x represents 1-3; Q.sub.1 to Q.sub.12 represent hydrogen, alkyl or phenyl; and Z.sub.1 to Z.sub.5 represent the groups of the following formulas: ##STR2## wherein R.sub.2 is hydrogen, halogen or the like; R.sub.3 is as defined above; y is 1-3; and p is 0 or 1. This positive resist composition is excellent in the balance between properties such as resolution, profile, depth of focus, etc.
    • 一种正型抗蚀剂组合物,其包含碱溶性树脂和含有由以下通式表示的至少一种酚化合物的醌二叠氮磺酸酯的光敏醌二叠氮化物材料:(Ia)图像(Ib)< IMAGE> (Ⅰc)(Id)其中R1表示氢,卤素等; R3表示烷基或苯基; x表示1-3; Q1至Q12表示氢,烷基或苯基; Z 1〜Z 5分别表示下式的基团:其中,R 2为氢,卤素等; R3如上所定义; y为1-3; 并且p为0或1.该正性抗蚀剂组合物在分辨率,轮廓,焦深等性能之间的平衡方面是优异的。
    • 9. 发明授权
    • Positive resist composition
    • 正抗蚀剂组成
    • US5407778A
    • 1995-04-18
    • US60539
    • 1993-05-13
    • Yasunori UetaniJun TomiokaHirotoshi Nakanishi
    • Yasunori UetaniJun TomiokaHirotoshi Nakanishi
    • G03F7/022H01L21/027G03F7/023G03F7/30
    • G03F7/022
    • A positive resist composition comprising an alkali-soluble resin and a light-sensitive quinonediazide material containing a quinonediazidesulfonic acid diester of at least one member selected from the phenol compounds represented by the following general formulas: ##STR1## wherein R.sub.1 and R.sub.2 each represent hydrogen, halogen, --OCOR.sub.3, alkyl or alkoxy in which R.sub.3 represents alkyl or phenyl, x and y each represent 1, 2 or 3, and R, R.sub.o, R' and R.sub.o ' each represent hydrogen atom, alkyl or phenyl group; wherein the content of said diester is 50% or greater based on the total light-sensitive quinonediazide material. This composition is excellent in the balance between properties such as resolution, profile and depth of focus.
    • 一种正极抗蚀剂组合物,其包含碱溶性树脂和含有选自以下通式表示的酚化合物中的至少一种的醌二叠氮磺酸二酯的光敏醌二叠氮化物材料:(I)< IMAGE(II) )其中R 1和R 2各自表示氢,卤素,-OCOR 3,其中R 3表示烷基或苯基的烷基或烷氧基,x和y各自表示1,2或3,R,Ro,R'和Ro'各自表示氢原子 ,烷基或苯基; 其中所述二酯的含量基于全部光敏醌二叠氮化物材料为50%以上。 该组合物在分辨率,轮廓和焦深等性质之间的平衡方面是优异的。