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1. 发明申请

US20090173444A1 SURFACE PROCESSING APPARATUS 审中-公开
标题翻译：表面加工设备
公开(公告)号：US20090173444A1
公开(公告)日：2009-07-09
申请号：US12397150
申请日：2009-03-03
申请人： Yasumi Sago , Masayoshi Ikeda , Kazuaki Kaneko , Daisuke Kondo , Osamu Morita
发明人： Yasumi Sago , Masayoshi Ikeda , Kazuaki Kaneko , Daisuke Kondo , Osamu Morita
IPC分类号： C23F1/08 , C23C16/54
CPC分类号： C23C16/4557 , C23C16/45565 , C23C16/45572 , C23C16/5096 , H01J37/3244
摘要： The invention is to realize a gas ejection mechanism, which makes it possible to form a uniform gas flow and to control the temperature and its distribution over a gas plate, and thereby to provide a surface processing apparatus which can continuously carry out uniform processing. A surface processing apparatus of this invention comprises: a process chamber in which a substrate holding mechanism and a gas ejection mechanism are arranged to face each other; an exhaust means; and a gas supply means; wherein a gas distribution mechanism, a cooling or the heating mechanism provided with a coolant channel or a heater to cool or heat a gas plate and a number of gas passages, and the gas plate having a number of gas outlets communicated with the gas passages are arranged in that order from the upper stream to construct the gas ejection mechanism, and wherein the gas plate is fixed to the cooling or heating mechanism with a clamping member or with an electrostatic chucking mechanism. A second gas distribution mechanism may be installed between the gas plate and the cooling or heating mechanism so as to form gas outlets under the coolant channel.
摘要翻译：本发明是为了实现气体喷射机构，其能够形成均匀的气流并且控制温度及其在气板上的分布，从而提供能够连续进行均匀处理的表面处理装置。本发明的表面处理装置包括：处理室，其中基板保持机构和气体喷射机构彼此相对配置; 排气装置; 和气体供给装置; 其特征在于，具有冷却通道的冷却或加热机构，或用于冷却或加热气板和多个气体通道的加热机构以及具有与气体通路连通的多个气体出口的气体板的气体分配机构，从上游按顺序排列构成气体排出机构，其中，气板用夹紧构件或静电吸附机构固定在冷却或加热机构上。第二气体分配机构可以安装在气体板和冷却或加热机构之间，以在冷却剂通道下形成气体出口。

2. 发明申请

US20080156440A1 Surface processing apparatus 审中-公开
标题翻译：表面处理装置
公开(公告)号：US20080156440A1
公开(公告)日：2008-07-03
申请号：US12000624
申请日：2007-12-14
申请人： Yasumi Sago , Masayoshi Ikeda , Kazuaki Kaneko , Daisuke Kondo , Osamu Morita
发明人： Yasumi Sago , Masayoshi Ikeda , Kazuaki Kaneko , Daisuke Kondo , Osamu Morita
IPC分类号： H01L21/306 , C23F1/00 , C23C16/00
CPC分类号： C23C16/4557 , C23C16/45565 , C23C16/45572 , C23C16/5096 , H01J37/3244
摘要： A surface processing apparatus includes a process chamber including a gas ejection mechanism; an exhaust for exhausting the inside of said process chamber; and a gas supply for supplying a gas to the gas ejection mechanism. The gas ejection mechanism includes a first gas distribution mechanism for distributing the gas into a cooling or heating mechanism, including a gas distribution plate placed in the frame member, the gas distribution plate having a plurality of holes that extend therethrough, the cooling or heating mechanism having multiple gas passages that extend therethrough, the plate having a number of outlets to eject the gas into the process chamber, wherein there are more outlets in the plate than there are gas passages, and the plate is fixed to a second gas distribution mechanism with a clamping member.
摘要翻译：表面处理装置包括：处理室，包括气体喷射机构; 用于排出所述处理室内部的废气; 以及用于向气体喷射机构供给气体的气体供给。气体喷射机构包括用于将气体分配到冷却或加热机构中的第一气体分配机构，包括设置在框架构件中的气体分配板，气体分配板具有穿过其延伸的多个孔，冷却或加热机构具有延伸穿过其中的多个气体通道，所述板具有多个出口以将气体喷射到处理室中，其中板中的出口多于具有气体通道的多个出口，并且板被固定到第二气体分配机构，其具有夹紧构件。

3. 发明申请

US20080053614A1 Surface Processing Apparatus 审中-公开
标题翻译：表面处理设备
公开(公告)号：US20080053614A1
公开(公告)日：2008-03-06
申请号：US11845135
申请日：2007-08-27
申请人： Yasumi Sago , Masayoshi Ikeda , Kazuaki Kaneko , Daisuke Kondo , Osamu Morita
发明人： Yasumi Sago , Masayoshi Ikeda , Kazuaki Kaneko , Daisuke Kondo , Osamu Morita
IPC分类号： C23F1/00 , C23C16/00 , H01L21/306
CPC分类号： C23C16/4557 , C23C16/45565 , C23C16/45572 , C23C16/5096 , H01J37/3244
摘要： A surface processing apparatus includes a process chamber including a gas ejection mechanism; an exhaust for exhausting the inside of said process chamber; and a gas supply for supplying a gas to the gas ejection mechanism. The gas ejection mechanism includes a a first gas distribution mechanism for distributing the gas into a cooling or heating mechanism, including a gas distribution plate placed in the frame member, the gas distribution plate having a plurality of holes that extend therethrough, the cooling or heating mechanism having multiple gas passages that extend therethrough, the plate having a number of outlets to eject the gas into the process chamber, wherein there are more outlets in the plate than there are gas passages, and the plate is fixed to a second gas distribution mechanism with a clamping member.
摘要翻译：表面处理装置包括：处理室，包括气体喷射机构; 用于排出所述处理室内部的废气; 以及用于向气体喷射机构供给气体的气体供给。气体喷射机构包括：第一气体分配机构，用于将气体分配到冷却或加热机构中，包括布置在框架构件中的气体分配板，气体分配板具有多个穿过其延伸的孔，冷却或加热机构具有延伸穿过其中的多个气体通道，所述板具有多个出口以将气体喷射到处理室中，其中板中的出口多于具有气体通道的多个出口，并且板被固定到第二气体分配机构，其具有夹紧构件。

4. 发明授权

US07976716B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US07976716B2
公开(公告)日：2011-07-12
申请号：US12392385
申请日：2009-02-25
申请人： Yasumi Sago , Masayoshi Ikeda , Kazuaki Kaneko , Takuji Okada
发明人： Yasumi Sago , Masayoshi Ikeda , Kazuaki Kaneko , Takuji Okada
IPC分类号： B44C1/22
CPC分类号： H01L21/67017 , H01L21/67109
摘要： A method of using a heat exchanger efficiently and uniformly to cool or heats portions to be controlled to a prescribed temperature, and then continuously carry out stable processing. The heat exchanger is constructed by arranging partition walls between two plates to form a fluid channel and a fin parallel with the channel or inclined by a prescribed angle on each of the two plates insides the channel so that the plate or a member in contact with the plate is cooled or heated with the fluid flowing through the channel.
摘要翻译：使用热交换器有效地均匀地将要控制的部分冷却或加热到规定温度的方法，然后连续进行稳定的处理。热交换器通过在两个板之间布置分隔壁而构成，以形成流体通道和平行于通道的翅片，或者在两个板的每一个上倾斜规定的角度，以使得该通道与与该通道接触的构件板被冷却或加热流体流过通道。

5. 发明授权

US07011744B2 Brine supply unit 失效
公开(公告)号：US07011744B2
公开(公告)日：2006-03-14
申请号：US10308164
申请日：2002-12-03
申请人： Tomio Takamura , Tadashi Hirayama , Yoshiyuki Ikemura , Masahiko Tamaru , Yasumi Sago , Masayoshi Ikeda , Kazuaki Kaneko , Jun Miyaji , Noriaki Tateno
发明人： Tomio Takamura , Tadashi Hirayama , Yoshiyuki Ikemura , Masahiko Tamaru , Yasumi Sago , Masayoshi Ikeda , Kazuaki Kaneko , Jun Miyaji , Noriaki Tateno
IPC分类号： B01D36/00 , F25B29/00
CPC分类号： G05D23/1393
摘要： A brine supply unit for supplying brine to at least one load after controlling the brine so as to meet a target temperature of the load comprises: a heat exchanger disposed at a brine-cooling channel, through which the brine returned from the load flows, for cooling the brine with water for industrial use; a heater disposed at a brine-heating channel formed in parallel with the brine-cooling channel, through which the brine flows, for heating the brine; a mixing section disposed at a connecting portion between the brine-cooling channel and the brine-heating channel, for mixing the cooled brine and the heated brine; and a tank disposed between the mixing section and the load, which has a capacity of about 10 liters or more and is constructed so that the brine can pass therethrough slowly to relieve a sudden temperature change of the brine.

6. 再颁专利

USRE42175E1 Electrostatic chucking stage and substrate processing apparatus 有权
标题翻译：静电吸附台和基板处理装置
公开(公告)号：USRE42175E1
公开(公告)日：2011-03-01
申请号：US12470231
申请日：2009-05-21
申请人： Yasumi Sago , Kazuaki Kaneko , Takuji Okada , Masayoshi Ikeda , Toshihiro Tachikawa , Tadashi Inokuchi , Takashi Kayamoto
发明人： Yasumi Sago , Kazuaki Kaneko , Takuji Okada , Masayoshi Ikeda , Toshihiro Tachikawa , Tadashi Inokuchi , Takashi Kayamoto
IPC分类号： H01L21/00 , C23C16/00 , C23C14/00
CPC分类号： B25B11/002 , Y10T279/23
摘要： This application discloses the structure of an ESC stage where a chucking electrode is sandwiched by a moderation layer and a covering layer. The moderation layer and the covering layer have the thermal expansion coefficients between the dielectric plate and the chucking electrode. This application also discloses the structure of an ESC stage where a chucking electrode is sandwiched by a moderation layer and a covering layer, which have internal stress directed oppositely to that of the chucking electrode. This application further discloses a substrate processing apparatus for carrying out a process onto a substrate as the substrate is maintained at a temperature higher than room temperature, comprising the electrostatic chucking stage for holding the substrate during the process.
摘要翻译：本申请公开了一种ESC阶段的结构，其中夹持电极被中间层和覆盖层夹持。调节层和覆盖层在电介质板和夹持电极之间具有热膨胀系数。本申请还公开了一种ESC台的结构，其中夹持电极被夹持在与夹持电极相反的内部应力的调节层和覆盖层。本申请进一步公开了一种用于在基板保持在高于室温的温度下进行基板上的处理的基板处理装置，其包括在该过程期间保持基板的静电夹持台。

7. 发明授权

US07615133B2 Electrostatic chuck module and cooling system 失效
标题翻译：静电吸盘模块和冷却系统
公开(公告)号：US07615133B2
公开(公告)日：2009-11-10
申请号：US10497720
申请日：2002-12-03
申请人： Noriaki Tateno , Jun Miyaji , Yasumi Sago , Masayoshi Ikeda , Kazuaki Kaneko , Tomio Takamura , Tadashi Hirayama , Yoshiyuki Ikemura , Masahiko Tamaru
发明人： Noriaki Tateno , Jun Miyaji , Yasumi Sago , Masayoshi Ikeda , Kazuaki Kaneko , Tomio Takamura , Tadashi Hirayama , Yoshiyuki Ikemura , Masahiko Tamaru
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01L21/683
CPC分类号： H01L21/67103 , H01L21/6831 , H01L21/6833 , Y10T279/23
摘要： An electrostatic chuck module for a semiconductor manufacturing apparatus which can be cooled with water and in which there is no penetration leak includes an electrostatic chuck plate of alumina and a cooling plate which is bonded to the electrostatic chuck, wherein the cooling plate is formed by forging processing to a Cu-based composite material comprising Cu—W, Cu—W—Ni, Cu—Mo, or Cu—Mo—Ni. By adjusting the ratio of Cu and Ni having a great thermal expansion coefficient and W and Mo having a small thermal expansion coefficient in a Cu-based composite material, it is possible to obtain a highly thermally conductive material having the same thermal expansion coefficient as an alumina material for an electrostatic chuck. However, since such a composite material has a penetration leak, it cannot be used in a vacuum system. According to the present invention, by conducting forging processing, a penetration leak can be prevented. Also, corrosion resistance which is important for a cooling plate can be improved by applying a Ni, Cr or Cu film by plating or sputtering.
摘要翻译：一种用于半导体制造装置的静电吸盘模块，其可以用水冷却并且其中没有渗透泄漏包括氧化铝的静电吸盘和与静电吸盘结合的冷却板，其中冷却板通过锻造形成对Cu-W，Cu-W-Ni，Cu-Mo或Cu-Mo-Ni的Cu基复合材料的加工。通过在Cu系复合材料中调节热膨胀系数大的Cu和Ni的比例以及热膨胀系数小的W和Mo，可以获得具有相同的热膨胀系数的高导热性材料用于静电卡盘的氧化铝材料。然而，由于这种复合材料具有渗透泄漏，所以不能用于真空系统。根据本发明，通过进行锻造处理，能够防止渗透泄漏。此外，通过电镀或溅射施加Ni，Cr或Cu膜，可以提高对冷却板重要的耐腐蚀性。

8. 发明申请

US20050127619A1 Electrostatic clampless holder module and cooling system 失效
标题翻译：静电无夹持器模块和冷却系统
公开(公告)号：US20050127619A1
公开(公告)日：2005-06-16
申请号：US10497720
申请日：2002-12-03
申请人： Noriaki Tateno , Jun Miyaji , Yasumi Sago , Masayoshi Ikeda , Kazuaki Kaneko , Tomio Takamura , Tadashi Hirayama , Yoshiyuki Ikemura , Masahiko Tamaru
发明人： Noriaki Tateno , Jun Miyaji , Yasumi Sago , Masayoshi Ikeda , Kazuaki Kaneko , Tomio Takamura , Tadashi Hirayama , Yoshiyuki Ikemura , Masahiko Tamaru
IPC分类号： F25D1/02 , F25D9/00 , H01L21/00 , H01L21/683 , H02N13/00 , B23B31/28
CPC分类号： H01L21/67103 , H01L21/6831 , H01L21/6833 , Y10T279/23
摘要： An electrostatic chuck module for a semiconductor manufacturing apparatus which can be cooled with water and in which there is no penetration leak includes an electrostatic chuck plate of alumina and a cooling plate which is bonded to the electrostatic chuck, wherein the cooling plate is formed by forging processing to a Cu-based composite material comprising Cu—W, Cu—W—Ni, Cu—Mo, or Cu—Mo—Ni. By adjusting the ratio of Cu and Ni having a great thermal expansion coefficient and W and Mo having a small thermal expansion coefficient in a Cu-based composite material, it is possible to obtain a highly thermally conductive material having the same thermal expansion coefficient as an alumina material for an electrostatic chuck. However, since such a composite material has a penetration leak, it cannot be used in a vacuum system. According to the present invention, by conducting forging processing, a penetration leak can be prevented. Also, corrosion resistance which is important for a cooling plate can be improved by applying a Ni, Cr or Cu film by plating or sputtering.
摘要翻译：一种用于半导体制造装置的静电吸盘模块，其可以用水冷却并且其中没有渗透泄漏包括氧化铝的静电吸盘和与静电吸盘结合的冷却板，其中冷却板通过锻造形成对Cu-W，Cu-W-Ni，Cu-Mo或Cu-Mo-Ni的Cu基复合材料的加工。通过在Cu系复合材料中调节热膨胀系数大的Cu和Ni的比例以及热膨胀系数小的W和Mo，可以获得具有相同的热膨胀系数的高导热性材料用于静电卡盘的氧化铝材料。然而，由于这种复合材料具有渗透泄漏，所以不能用于真空系统。根据本发明，通过进行锻造处理，能够防止渗透泄漏。此外，通过电镀或溅射施加Ni，Cr或Cu膜，可以提高对冷却板重要的耐腐蚀性。

9. 发明授权

US07513063B2 Substrate processing apparatus 有权
标题翻译：基板加工装置
公开(公告)号：US07513063B2
公开(公告)日：2009-04-07
申请号：US10375349
申请日：2003-02-28
申请人： Yasumi Sago , Masayoshi Ikeda , Kazuaki Kaneko , Takuji Okada
发明人： Yasumi Sago , Masayoshi Ikeda , Kazuaki Kaneko , Takuji Okada
IPC分类号： F26B17/00
CPC分类号： H01L21/67017 , H01L21/67109
摘要： A heat exchanger efficiently and uniformly cools or heats portions to be controlled to a prescribed temperature, and then provides a surface processing apparatus which makes it possible to continuously carry out stable processing. The heat exchanger is constructed by arranging partition walls between two plates to form a fluid channel and a fin parallel with the channel or inclined by a prescribed angle on each of the two plates insides the channel so that the plate or a member in contact with the plate is cooled or heated with the fluid flowing through the channel.
摘要翻译：热交换器将要控制的部分有效地均匀地冷却或加热到规定温度，然后提供能够连续进行稳定加工的表面处理装置。热交换器通过在两个板之间布置分隔壁而构成，以形成流体通道和平行于通道的翅片，或者在两个板的每一个上倾斜规定的角度，以使得该通道与与该通道接触的构件板被冷却或加热流体流过通道。

10. 发明授权

US07220319B2 Electrostatic chucking stage and substrate processing apparatus 有权
标题翻译：静电吸附台和基板处理装置
公开(公告)号：US07220319B2
公开(公告)日：2007-05-22
申请号：US10413136
申请日：2003-04-15
申请人： Yasumi Sago , Kazuaki Kaneko , Takuji Okada , Masayoshi Ikeda , Toshihiro Tachikawa , Tadashi Inokuchi , Takashi Kayamoto
发明人： Yasumi Sago , Kazuaki Kaneko , Takuji Okada , Masayoshi Ikeda , Toshihiro Tachikawa , Tadashi Inokuchi , Takashi Kayamoto
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： B25B11/002 , Y10T279/23
摘要： This application discloses the structure of an ESC stage where a chucking electrode is sandwiched by a moderation layer and a covering layer. The moderation layer and the covering layer have the thermal expansion coefficients between the dielectric plate and the chucking electrode. This application also discloses the structure of an ESC stage where a chucking electrode is sandwiched by a moderation layer and a covering layer, which have internal stress directed oppositely to that of the chucking electrode. This application further discloses a substrate processing apparatus for carrying out a process onto a substrate as the substrate is maintained at a temperature higher than room temperature, comprising the electrostatic chucking stage for holding the substrate during the process.
摘要翻译：本申请公开了一种ESC阶段的结构，其中夹持电极被中间层和覆盖层夹持。调节层和覆盖层在电介质板和夹持电极之间具有热膨胀系数。本申请还公开了一种ESC台的结构，其中夹持电极被夹持在与夹持电极相反的内部应力的调节层和覆盖层。本申请进一步公开了一种用于在基板保持在高于室温的温度下进行基板上的处理的基板处理装置，其包括在该过程期间保持基板的静电夹持台。

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