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1. 发明授权

US09840028B2 Cleaving method for a glass film 有权
公开(公告)号：US09840028B2
公开(公告)日：2017-12-12
申请号：US13195178
申请日：2011-08-01
申请人： Yasuhiro Matsumoto , Koichi Mori , Hiroshi Naruse , Michiharu Eta , Hiroki Mori
发明人： Yasuhiro Matsumoto , Koichi Mori , Hiroshi Naruse , Michiharu Eta , Hiroki Mori
IPC分类号： B28D1/22 , C03B35/18 , C03B33/09
CPC分类号： B28D1/221 , C03B33/091 , C03B35/189 , Y02P40/57 , Y10T225/12
摘要： Provided is a cleaving method for a glass film (G) including: cleaving, during conveyance of the glass film (G) in a predetermined direction, the glass film (G) continuously along a preset cleaving line (8) extending in a predetermined conveying direction (a) by a thermal stress generated through localized heating performed along the preset cleaving line (8) and through cooling of a locally heated region (H); dividing the glass film (G) in a width direction of the glass film (G); diverting, after the dividing, adjacent divided glass films (10), which are obtained by the dividing, so that the adjacent divided glass films (10) are separated in a front and rear direction of the adjacent divided glass films; and forming a predetermined widthwise clearance between the adjacent divided glass films after the dividing of the glass film (G) and before the diverting of the adjacent divided glass films (10).

2. 发明申请

US20120024928A1 CLEAVING METHOD FOR A GLASS FILM 有权
标题翻译：玻璃膜清洗方法
公开(公告)号：US20120024928A1
公开(公告)日：2012-02-02
申请号：US13195178
申请日：2011-08-01
申请人： Yasuhiro Matsumoto , Koichi Mori , Hiroshi Naruse , Michiharu Eta , Hiroki Mori
发明人： Yasuhiro Matsumoto , Koichi Mori , Hiroshi Naruse , Michiharu Eta , Hiroki Mori
IPC分类号： B65H35/10
CPC分类号： B28D1/221 , C03B33/091 , C03B35/189 , Y02P40/57 , Y10T225/12
摘要： Provided is a cleaving method for a glass film (G) including: cleaving, during conveyance of the glass film (G) in a predetermined direction, the glass film (G) continuously along a preset cleaving line (8) extending in a predetermined conveying direction (a) by a thermal stress generated through localized heating performed along the preset cleaving line (8) and through cooling of a locally heated region (H); dividing the glass film (G) in a width direction of the glass film (G) ; diverting, after the dividing, adjacent divided glass films (10) , which are obtained by the dividing, so that the adjacent divided glass films (10) are separated in a front and rear direction of the adjacent divided glass films; and forming a predetermined widthwise clearance between the adj acent divided glass films after the dividing of the glass film (G) and before the diverting of the adjacent divided glass films (10).
摘要翻译：本发明提供一种玻璃薄膜（G）的切割方法，其特征在于，包括：在沿规定方向输送所述玻璃薄膜（G）的同时，沿着预定的输送线（8）连续延伸所述玻璃薄膜（G）方向（a）通过沿着预设的分裂线（8）进行的局部加热而产生的热应力，并且通过冷却局部加热区域（H）; 在玻璃膜（G）的宽度方向上分割玻璃膜（G）; 在分割之后，通过分割获得的相邻分割玻璃膜（10）转向，使得相邻的分割玻璃膜（10）在相邻的分割玻璃膜的前后方向上分离; 并且在玻璃膜（G）分割之后和相邻的分割玻璃膜（10）转向之前，在相邻的分割玻璃膜之间形成预定的宽度间隙。

3. 发明申请

US20100140719A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100140719A1
公开(公告)日：2010-06-10
申请号：US12563247
申请日：2009-09-21
申请人： Hiroyuki YAMASAKI , Kenji Kojima , Hiroshi Naruse , Hideaki Harakawa
发明人： Hiroyuki YAMASAKI , Kenji Kojima , Hiroshi Naruse , Hideaki Harakawa
IPC分类号： H01L27/06 , H01L21/28
CPC分类号： H01L29/7833 , H01L21/823807 , H01L27/0629 , H01L28/20 , H01L29/4966 , H01L29/518
摘要： A semiconductor device includes a substrate which includes an element region and an isolation region, a transistor portion which includes a gate insulating film formed on the element region, and a gate electrode having a metal film formed on the gate insulating film and a first semiconductor film formed on the metal film, and a resistance element portion which includes a second semiconductor film formed above the substrate and formed of the same material as that of the first semiconductor film, and a cavity formed between the substrate and the second semiconductor film.
摘要翻译：半导体器件包括：衬底，其包括元件区域和隔离区域;晶体管部分，其包括形成在元件区域上的栅极绝缘膜;以及栅电极，具有形成在栅极绝缘膜上的金属膜和第一半导体膜形成在所述金属膜上的电阻元件部分，以及电阻元件部分，其包括在所述基板上形成并由与所述第一半导体膜相同的材料形成的第二半导体膜，以及形成在所述基板和所述第二半导体膜之间的空腔。

4. 发明申请

US20070191615A1 Polymerizable compound and use thereof 有权
标题翻译：可聚合化合物及其用途
公开(公告)号：US20070191615A1
公开(公告)日：2007-08-16
申请号：US10594497
申请日：2005-03-31
申请人： Atsuo Otsuji , Hiroshi Naruse , Mitsuo Nakamura
发明人： Atsuo Otsuji , Hiroshi Naruse , Mitsuo Nakamura
IPC分类号： C07D327/00
CPC分类号： C08G75/06 , G02B1/04
摘要： The present invention is to provide a polymerizable compound which can be a raw material for a resin having high transparency, good heat resistance and mechanical strength required for optical components such as plastic lenses and the like, while attaining a high refractive index (nd) exceeding 1.7, and an optical component composed of such a resin. Disclosed is a compound represented by the general formula (3), wherein, in the formula, M represents a metal atom; X1 and X2 each independently represent a sulfur atom or an oxygen atom; R1 represents a divalent organic group; m represents an integer of 0 or 1 or more; p represents an integer of from 1 to n; q represents an integer of from 1 to (n-p); n represents a valence of a metal atom M; Yq each independently represent an inorganic or organic residue; and when q is 2 or more, Yq may be bonded to one another for forming a ring structure with the intermediary of a metal atom M.
摘要翻译：本发明提供一种聚合性化合物，其可以成为具有高透明度，高耐热性和塑料透镜等的光学部件所需的机械强度的树脂的原料，同时获得高折射率（nd） 1.7，以及由这种树脂构成的光学部件。公开了由通式（3）表示的化合物，其中在式中，M表示金属原子; X 1和X 2各自独立地表示硫原子或氧原子; R 1表示二价有机基团; m表示0或1以上的整数， p表示1〜n的整数， q表示1〜（n-p）的整数。 n表示金属原子M的化合价; Yq各自独立地表示无机或有机残基; 当q为2以上时，可以将Yq彼此结合形成具有金属原子M的中间环状结构。

5. 发明授权

US06758890B2 Aqueous ink and process for producing dye 失效
标题翻译：水性油墨和生产染料的方法
公开(公告)号：US06758890B2
公开(公告)日：2004-07-06
申请号：US10088352
申请日：2002-03-15
申请人： Yoriaki Matsuzaki , Kenichi Fujii , Osamu Kohgo , Hiroshi Naruse , Tsutami Misawa
发明人： Yoriaki Matsuzaki , Kenichi Fujii , Osamu Kohgo , Hiroshi Naruse , Tsutami Misawa
IPC分类号： C09D1102
CPC分类号： C09D11/328 , C09B43/16 , C09B62/043 , C09B62/08
摘要： Aqueous ink for ink jet recording comprising a coloring matter and an aqueous medium, in which at least one of dyes represented by the formula (A) or a salt thereof is contained as the coloring matter wherein R1 and R3, independently from each other, represent a hydrogen atom, an optionally substituted alkyl group, an optionally substituted alkoxy group, an amino group, a hydroxyl group or a halogen atom, R2 and R4, independently from each other, represent a hydrogen atom, an optionally substituted alkyl group, an optionally substituted aryl group or an aralkyl group, A represents an optionally substituted phenyl group or naphthyl group, X represents a divalent bonding group free from a saturated carbon ring, and m and n, independently from each other, represent an integer of 1 to 4.
摘要翻译：用于喷墨记录的水性油墨包括着色剂和水性介质，其中含有至少一种由式（A）表示的染料或其盐作为着色剂，其中R1和R3彼此独立地表示氢原子，任选取代的烷基，任选取代的烷氧基，氨基，羟基或卤素原子，R 2和R 4彼此独立地表示氢原子，任选取代的烷基，任选取代的芳基或芳烷基，A表示任选取代的苯基或萘基，X表示不含饱和碳环的二价键合基团，m和n彼此独立地表示1〜4的整数。

6. 发明授权

US5665616A Process of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的工艺
公开(公告)号：US5665616A
公开(公告)日：1997-09-09
申请号：US731012
申请日：1996-10-09
申请人： Koji Kimura , Hiroshi Naruse
发明人： Koji Kimura , Hiroshi Naruse
IPC分类号： H01L21/331 , H01L21/8222 , H01L21/8248 , H01L21/8249 , H01L27/06 , H01L29/732 , H01L21/265
CPC分类号： H01L27/0623 , H01L21/8249
摘要： In the Bi-CMOS process of manufacturing a semiconductor device by an effective combination of a bipolar transistor manufacturing process and a CMOS transistor manufacturing process in the case of the formation of a silicide film on a Bi-CMOS device, in which the bipolar transistor having an inner base region made of a silicon film grown by epitaxy and the MOS transistor having silicide formed on the gate electrode, source region and drain region in a self-aligned manner therewith are formed on the same semiconductor substrate, while the silicon film of the inner base region is epitaxially grown in a step, a silicon film is also epitaxially grown on the source/drain regions at the same time in the same step.
摘要翻译：在双极晶体管制造工艺和CMOS晶体管制造工艺的有效组合的Bi-CMOS工艺中，在Bi-CMOS器件上形成硅化物膜的情况下，其中双极晶体管具有通过外延生长的硅膜制成的内基区域和在其自对准方式上形成在栅电极，源区和漏区上的具有硅化物的MOS晶体管形成在同一半导体衬底上，而硅膜内部基极区域在步骤中外延生长，在同一步骤中同时在源极/漏极区域上外延生长硅膜。

7. 发明授权

US5545751A Process for the preparation of 4-methoxy-2,2',6'-Trimethyldiphenylamine 失效
标题翻译： 4-甲氧基-2,2'，6'-三甲基二苯胺的制备方法
公开(公告)号：US5545751A
公开(公告)日：1996-08-13
申请号：US358566
申请日：1994-12-14
申请人： Chiyuki Kusuda , Masayuki Furuya , Masaru Wada , Yoshihiro Irizato , Hiroshi Naruse , Teruyuki Nagata
发明人： Chiyuki Kusuda , Masayuki Furuya , Masaru Wada , Yoshihiro Irizato , Hiroshi Naruse , Teruyuki Nagata
IPC分类号： C07C213/00 , C07C217/92 , C07C209/22
CPC分类号： C07C213/00 , C07C217/92
摘要： A process for the preparation of 4-methoxy-2,2',6-trimethyldiphenylamine, which comprises heating and reacting 2,6-dimethylcyclohexanone and 2-methyl-4-methoxyaniline in the presence of a dehydrogenation catalyst while removing the resultant hydrogen and water from the reaction system.
摘要翻译：一种制备4-甲氧基-2,2'，6-三甲基二苯胺的方法，该方法包括在脱氢催化剂的存在下加热和反应2,6-二甲基环己酮和2-甲基-4-甲氧基苯胺，同时除去所得氢气，来自反应体系的水。

8. 发明授权

US5399511A Method of manufacturing a hetero bipolar transistor 失效
标题翻译：异质双极晶体管的制造方法
公开(公告)号：US5399511A
公开(公告)日：1995-03-21
申请号：US280199
申请日：1994-07-25
申请人： Shin-ichi Taka , Kouji Kimura , Hiroshi Naruse , Kuniaki Kumamaru
发明人： Shin-ichi Taka , Kouji Kimura , Hiroshi Naruse , Kuniaki Kumamaru
IPC分类号： H01L29/165 , H01L21/331 , H01L29/205 , H01L29/73 , H01L29/737 , H01L21/265
CPC分类号： H01L29/66242 , H01L29/7378
摘要： The specification discloses a hetero bipolar transistor which comprises a semiconductor substrate, a first silicon layer serving as a collector, a first silicon-germanium layer serving as a base, a second silicon layer serving as a collector, and a second silicon-germanium layer. A side wall of the second silicon-germanium layer is in contact with side walls of the first silicon layer, the first silicon-germanium layer and the second silicon layer. The second silicon-germanium layer is disposed to surround the first silicon layer, the first silicon-germanium layer, and the second silicon layer, and has an energy band gap substantially the same as that of the first silicon-germanium layer.
摘要翻译：该说明书公开了一种异质双极晶体管，其包括半导体衬底，用作集电极的第一硅层，用作基极的第一硅 - 锗层，用作集电极的第二硅层和第二硅 - 锗层。第二硅 - 锗层的侧壁与第一硅层，第一硅 - 锗层和第二硅层的侧壁接触。第二硅锗层被设置为围绕第一硅层，第一硅 - 锗层和第二硅层，并且具有与第一硅 - 锗层基本相同的能带隙。

9. 发明授权

US4022686A Flotation process for copper ores and copper smelter slags 失效
标题翻译：铜矿和铜冶炼炉渣浮选工艺
公开(公告)号：US4022686A
公开(公告)日：1977-05-10
申请号：US659965
申请日：1976-02-20
申请人： Akira Arakatsu , Hajime Nakazawa , Hiroshi Naruse
发明人： Akira Arakatsu , Hajime Nakazawa , Hiroshi Naruse
IPC分类号： B03D1/004 , B03D1/02 , C11D1/02 , C11D1/58 , C11D1/65 , C11D1/66 , C11D1/835 , B03D1/06
CPC分类号： B03D1/014 , B03D1/006 , B03D1/012 , B03D2201/02 , B03D2203/02
摘要： A flotation process in which copper ores or copper converter slags are ground and firstly have added thereto benzotriazole or alkyl benzotriazole as an activator and secondly one or more collectors selected from the group consisting of xanthates, dithiophosphates, thiocarbamate esters, dithiocarbamates, mercaptans and dixanthogens and further, if desired, a promoter such as kerosene, light oil, bunker oil or petroleum lubricant is added to improve the recovery for the flotation of copper ores or copper smelter slags.
摘要翻译：一种浮选方法，其中将铜矿石或铜转炉炉渣研磨并首先加入苯并三唑或烷基苯并三唑作为活化剂，其次是一种或多种选自黄原酸盐，二硫代磷酸盐，硫代氨基甲酸酯，二硫代氨基甲酸盐，硫醇和二恶烷的收集剂，以及此外，如果需要，加入促进剂如煤油，轻油，燃油或石油润滑剂以改善铜矿石或铜冶炼炉渣的浮选回收。

10. 发明授权

US08946317B2 Composition for hard tissue repair 有权
标题翻译：组织硬组织修复
公开(公告)号：US08946317B2
公开(公告)日：2015-02-03
申请号：US13508451
申请日：2010-11-18
申请人： Noriaki Asada , Shinya Aoki , Hiroshi Naruse , Shoichi Miyakoshi , Masami Arata
发明人： Noriaki Asada , Shinya Aoki , Hiroshi Naruse , Shoichi Miyakoshi , Masami Arata
IPC分类号： A61F2/00 , A61L27/54 , A61L27/16 , C08F265/06 , A61L24/00 , A61L24/06
CPC分类号： A61L27/54 , A61L24/0015 , A61L24/06 , A61L27/16 , A61L2300/404 , A61L2430/02 , C08F265/06 , C08L33/06 , C08L33/12
摘要： The composition for hard tissue repair of the present invention is characterized by comprising 5 to 98.95 parts by weight of a monomer (A), 1 to 75 parts by weight of a (meth)acrylate polymer (B) and 0.05 to 20 parts by weight of a polymerization initiator composition (C) containing an organoboron compound (c1), with the proviso that the total amount of the components (A), (B) and (C) is 100 parts by weight. The composition undergoes small-scale heat generation during curing and can ensure a sufficient working time.
摘要翻译：本发明的硬组织修复用组合物的特征在于，含有5〜98.95重量份单体（A），1〜75重量份（甲基）丙烯酸酯聚合物（B）和0.05〜20重量份含有有机硼化合物（c1）的聚合引发剂组合物（C），前提条件是组分（A），（B）和（C）的总量为100重量份。组合物在固化期间经历小规模的发热并且可以确保足够的工作时间。

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