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    • 1. 发明授权
    • Magneto-optical disk
    • 磁光盘
    • US5667862A
    • 1997-09-16
    • US686287
    • 1991-04-16
    • Yasuaki NakaneShuichi IgarashiSakuya TamadaSusumu SakamotoTeruo Chiba
    • Yasuaki NakaneShuichi IgarashiSakuya TamadaSusumu SakamotoTeruo Chiba
    • G11B11/105G11B5/66
    • G11B11/10584G11B11/10586Y10S428/90Y10T428/265
    • A magneto-optical disk having a four-layer structure formed of a first protective dielectric layer, a recording magnetic layer, a second protective dielectric layer and a reflective metal layer is disclosed. The constraints for the film thicknesses of the various layers are determined not only from the optical and magneto-optical aspects, but from the aspect of the dynamic thermal response.The recording magnetic layer is a magnetic layer mainly formed of TbFeCo and having a film thickness of not less than 180 .ANG. and not more than 280 .ANG.. The first protective dielectric layer is a nitride film having a film thickness such that the product of its refractive index and the film thickness is not less than 0.2 and not more than 0.35 times the wavelength of the laser light employed. The second protective dielectric layer is a nitride film having a film thickness such that the product of its refractive index and the film thickness is not less than 0.1 and not more than 0.15 times the wavelength of the laser light employed. The the reflective metal layer is a metal layer having a film thickness of not less than 500 .ANG. and not more than 1000 .ANG., with the metal being electro-chemically less noble than the material of the recording magnetic layer and having a reflectivity at the boundary with the second protective dielectric material of not less than 70%.
    • 公开了一种具有由第一保护介电层,记录磁性层,第二保护电介质层和反射金属层形成的四层结构的磁光盘。 不仅从光学和磁光学方面,而且从动态热响应的方面来确定各层的膜厚度的限制。 记录磁性层是主要由TbFeCo形成的膜层,其膜厚度不小于180,不大于280。 第一保护介电层是具有使其折射率和膜厚度的乘积不小于使用的激光的波长的0.2至不超过0.35倍的膜厚度的氮化物膜。 第二保护电介质层是具有使其折射率和膜厚度的乘积不小于使用的激光的波长的0.1倍且不超过0.15倍的膜厚度的氮化物膜。 反射金属层是膜厚度不小于500和不大于1000的金属层,其中金属在电化学上比记录磁性层的材料更不贵,并且在边界处具有反射率 第二保护介电材料不低于70%。