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    • 1. 发明授权
    • Input-weighted charge transfer transversal filter
    • 输入加权电荷转移横向滤波器
    • US4249145A
    • 1981-02-03
    • US63564
    • 1979-08-03
    • Tatsuo SakaueYasoji SuzukiTetsuya Iida
    • Tatsuo SakaueYasoji SuzukiTetsuya Iida
    • H03H15/02G11C27/02H03K17/693
    • H03H15/023
    • An input-weighted charge transfer transversal filter which comprises a charge transfer device including a plurality of stages, a plurality of signal charge injectors to inject into the stages of the charge transfer device weighted signal charge packets containing an AC component and a DC component, and a sense amplifier to sense the output signal of the transversal filter from the final stage of the charge transfer device, a DC charge injector to inject a predetermined quantity of DC charge into the first stage of the charge transfer device, and charge drains respectively coupled to the stages of the charge transfer device to drain at least DC charge from stages. Due to this arrangement the quantity of DC component injected by the signal charge injectors and transferred through the charge transfer device will be reduced. This leads to an improvement in packing density and signal detecting capability of the transversal filter. According to a first embodiment of this invention, positive weighting of a signal is achieved by injecting a weighted signal charge packet into the stage of the charge transfer device, while negative weighting is achieved by draining the weighted signal charge packet from the stage. According to a second embodiment, selection between positive and negative weighting depends on the polarity of an input signal applied to the signal charge injector.
    • 一种输入加权电荷转移横向滤波器,其包括具有多级的电荷转移装置,多个信号电荷注入器,用于注入电荷转移装置的加载信号包含AC分量和DC分量的电荷分组, 感测放大器,用于感测来自电荷转移装置的最后级的横向滤波器的输出信号; DC电荷注入器,用于将预定量的DC电荷注入到电荷转移装置的第一级;以及电荷引流器,分别耦合到 电荷转移装置的阶段至少从阶段排出DC电荷。 由于这种布置,由信号电荷注入器注入并通过电荷转移装置传送的DC分量的量将减少。 这导致横向滤波器的封装密度和信号检测能力的改善。 根据本发明的第一实施例,通过将加权的信号电荷分组注入到电荷转移装置的级中来实现信号的正加权,而通过从该级中排出加权的信号电荷分组来实现负加权。 根据第二实施例,正和负加权之间的选择取决于施加到信号电荷注入器的输入信号的极性。
    • 2. 发明授权
    • Astable MOS FET multivibrator
    • 可靠的MOS FET多谐振荡器
    • US4301427A
    • 1981-11-17
    • US129737
    • 1980-03-12
    • Yasoji SuzukiTetsuya Iida
    • Yasoji SuzukiTetsuya Iida
    • H03K3/354H03K4/501
    • H03K3/354H03K4/501
    • A Schmitt trigger astable multivibrator circuit includes a first inverter, a second inverter whose input terminal is connected to the output terminal of the first inverter, a third inverter which is constituted by a first P-channel transistor and a first N-channel transistor serially connected and whose input and output terminals are respectively connected to the output and input terminals of the second inverter. The Schmitt trigger astable multivibrator circuit further includes a second P-channel transistor connected between a positive power supply terminal and the first P-channel transistor, and a second N-channel transistor connected between a ground terminal and the first N-channel transistor, and an input signal supplied to the first inverter is also applied to the gates of the second P-channel and N-channel transistors. The astable multivibrator also includes a time constant circuit, activated in response to the second inverter's output, which connects to the first inverter's input.
    • 施密特触发器非稳态多谐振荡器电路包括第一反相器,其输入端连接到第一反相器的输出端的第二反相器,由第一P沟道晶体管和第一N沟道晶体管串联连接的第三反相器 并且其输入和输出端分别连接到第二反相器的输出端和输入端。 施密特触发器非稳态多谐振荡器电路还包括连接在正电源端子和第一P沟道晶体管之间的第二P沟道晶体管,以及连接在接地端子和第一N沟道晶体管之间的第二N沟道晶体管,以及 提供给第一反相器的输入信号也被施加到第二P沟道和N沟道晶体管的栅极。 不稳定的多谐振荡器还包括响应于第二反相器输出而被激活的时间常数电路,其连接到第一反相器的输入端。
    • 4. 发明授权
    • Circuit for producing a polarity-reversed voltage with opposite polarity
to that of a power supply voltage
    • 用于产生与电源电压相反的极性的极性反转电压的电路
    • US4259686A
    • 1981-03-31
    • US947432
    • 1978-10-02
    • Yasoji SuzukiTetsuya Iida
    • Yasoji SuzukiTetsuya Iida
    • H02J1/00G05F3/24H02M3/07H03K5/003H03K5/00
    • H03K5/003H02M3/07
    • An inverter is controlled by first clock pulses for converting a positive power supply into second clock pulses having a first voltage level of the power supply and a second voltage level of a reference voltage. The second clock pulses are supplied to a capacitor. The source-drain path of a first impedance varying P-FET is connected between the output terminal of the capacitor and the reference voltage and is controlled so as to take a low impedance when the second clock pulses are at the first voltage level while a high impedance when the second clock pulses are at the second voltage level. The source-drain path of a second impedance varying P-FET is connected between the output terminal and a terminal for taking out a polarity-reversed voltage. The second impedance varying P-FET is supplied at the gate with the first clock pulses so as to be controlled to take a high impendance when the second clock pulses are at the first voltage level and a low impedance when the second clock pulses are at the second level.
    • 逆变器由第一时钟脉冲控制,用于将正电源转换成具有电源的第一电压电平和参考电压的第二电压电平的第二时钟脉冲。 第二个时钟脉冲被提供给电容器。 第一阻抗变化P-FET的源极 - 漏极路径被连接在电容器的输出端子和参考电压之间,并且当第二时钟脉冲处于第一电压电平时被控制成低阻抗,而高 当第二时钟脉冲处于第二电压电平时的阻抗。 第二阻抗变化P-FET的源极 - 漏极路径连接在输出端子和用于取出极性反转电压的端子之间。 第二阻抗变化P-FET在栅极处以第一时钟脉冲提供,以便当第二时钟脉冲处于第一电压电平时被控制以产生高阻抗,而当第二时钟脉冲处于第二时钟脉冲时 二级
    • 7. 发明授权
    • Voltage transfer circuit and a booster circuit, and an IC card
comprising the same
    • 电压传输电路和升压电路,以及包括该电路的IC卡
    • US06046626A
    • 2000-04-04
    • US3946
    • 1998-01-08
    • Yukihiro SaekiYasoji Suzuki
    • Yukihiro SaekiYasoji Suzuki
    • G11C11/413G06K19/07G11C11/407G11C16/06H02M3/07H03K19/0948G05F3/02
    • H02M3/073
    • A voltage transfer circuit comprises a first MOS transistor of a first channel type having a drain terminal connected to a first node supplied with a predetermined voltage, a source terminal connected to a second node, and a gate terminal, a second MOS transistor of a first channel type having a source terminal connected to the second node, a drain terminal connected to the gate terminal of the first MOS transistor, and a gate terminal supplied with a clock signal, as well as a third MOS transistor of a second channel type having a drain terminal connected to the drain terminal of the second MOS transistor, a source terminal connected to a third node supplied with a reference voltage, and a gate terminal supplied with the clock signal.
    • 电压传输电路包括第一通道类型的第一MOS晶体管,其具有连接到被提供有预定电压的第一节点的漏极端子,连接到第二节点的源极端子和栅极端子,第一MOS晶体管的第一 沟道型,具有连接到第二节点的源极端子,连接到第一MOS晶体管的栅极端子的漏极端子和提供有时钟信号的栅极端子,以及具有第二沟道类型的第三MOS晶体管,其具有 漏极端子连接到第二MOS晶体管的漏极端子,连接到提供有参考电压的第三节点的源极端子和被提供有时钟信号的栅极端子。
    • 9. 发明授权
    • Complementary MOSFET logic circuit
    • 互补MOSFET逻辑电路
    • US4558234A
    • 1985-12-10
    • US652429
    • 1984-09-20
    • Yasoji SuzukiKenji Matsuo
    • Yasoji SuzukiKenji Matsuo
    • H03K19/017H03K19/0175H03K19/0944H03K19/092H03K19/003H03K19/01H03K19/094
    • H03K19/09448H03K19/01721H03K19/017518
    • Disclosed is a complementary MOSFET logic circuit having a complementary MOS inverter with a pregiven ratio of the channel widths of a P channel MOSFET and an N channel MOSFET and pregiven threshold voltages of the FETs so as to have an input voltage characteristic adapted to an output voltage characteristic, and a buffer circuit which includes a bipolar transistor for receiving at the base thereof a signal from the output terminal of the complementary MOS inverter and an N channel MOSFET for receiving at the gate thereof an input signal applied to the complementary MOS inverter. The inverter and buffer are connected in series to one another between a high potential applying point and a low potential applying point, and a signal corresponding to a logic output signal of the complementary MOS inverter is produced at the output terminal thereof.
    • 公开了具有互补MOS反相器的互补MOSFET逻辑电路,其具有P沟道MOSFET和N沟道MOSFET的沟道宽度的预制比和FET的预定阈值电压,以便具有适于输出电压的输入电压特性 特性和缓冲电路,其包括用于在其基极处接收来自互补MOS反相器的输出端的信号的双极晶体管和用于在其栅极处接收施加到互补MOS反相器的输入信号的N沟道MOSFET。 反相器和缓冲器在高电位施加点和低电位施加点之间彼此串联连接,并且在其输出端产生与互补MOS反相器的逻辑输出信号相对应的信号。