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1. 发明授权

US06956292B2 Bumping process to increase bump height and to create a more robust bump structure 有权
标题翻译：凸起过程增加凸块高度并创建更坚固的凸块结构
公开(公告)号：US06956292B2
公开(公告)日：2005-10-18
申请号：US10613694
申请日：2003-07-03
申请人： Yang-Tung Fan , Cheng-Yu Chu , Fu-Jier Fan , Shih-Jane Lin , Chiou-Shian Peng , Yen-Ming Chen , Kuo-Wei Lin
发明人： Yang-Tung Fan , Cheng-Yu Chu , Fu-Jier Fan , Shih-Jane Lin , Chiou-Shian Peng , Yen-Ming Chen , Kuo-Wei Lin
IPC分类号： H01L21/60 , H01L23/48
CPC分类号： H01L24/11 , H01L2224/03912 , H01L2224/0401 , H01L2224/05022 , H01L2224/05124 , H01L2224/05147 , H01L2224/05171 , H01L2224/05572 , H01L2224/05644 , H01L2224/05655 , H01L2224/1147 , H01L2224/1191 , H01L2224/13099 , H01L2224/45144 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01084 , H01L2924/014 , H01L2924/04941 , H01L2924/10253 , H01L2924/14 , H01L2924/00 , H01L2224/05552 , H01L2924/00014 , H01L2924/013
摘要： A new process is provided which is an extension and improvement of present processing for the creation of a solder bump. After the layers of Under Bump Metal and a layer of solder metal have been created in patterned and etched format and overlying the contact pad, following a conventional processing sequence, a layer of polyimide is deposited. The solder flow is performed using the thickness of the deposited layer of polyimide to control the height of the column underneath the reflown solder.
摘要翻译：提供了一种新的工艺，其是用于产生焊料凸块的当前处理的延伸和改进。在图形化和蚀刻形式下形成了凹凸金属层和焊料金属层之后，按照传统的处理顺序，沉积了一层聚酰亚胺。使用聚酰亚胺沉积层的厚度来进行焊料流动，以控制在重熔焊料下面的柱的高度。

2. 发明授权

US06482669B1 Colors only process to reduce package yield loss 有权
标题翻译：颜色只能减少包装产量损失
公开(公告)号：US06482669B1
公开(公告)日：2002-11-19
申请号：US09867379
申请日：2001-05-30
申请人： Yang-Tung Fan , Chiou-Shian Peng , Cheng-Yu Chu , Shih-Jane Lin , Yen-Ming Chen , Fu-Jier Fan , Kuo-Wei Lin
发明人： Yang-Tung Fan , Chiou-Shian Peng , Cheng-Yu Chu , Shih-Jane Lin , Yen-Ming Chen , Fu-Jier Fan , Kuo-Wei Lin
IPC分类号： H01L2100
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14645 , H01L31/02162 , H01L31/02327
摘要： Disclosed is an ordered microelectronic fabrication sequence in which color filters are formed by conformal deposition directly onto a photodetector array of a CCD, CID, or CMOS imaging device to create a concave-up pixel surface, and, overlayed with a high transmittance planarizing film of specified index of refraction and physical properties which optimize light collection to the photodiode without additional conventional microlenses. The optically flat top surface serves to encapsulate and protect the imager from chemical and thermal cleaning treatment damage, minimizes topographical underlayer variations which aberrate or cause reflection losses of images formed on non-planar surfaces, and, obviates residual particle inclusions induced during dicing and packaging. A CCD imager is formed by photolithographically patterning a planar-array of photodiodes on a semiconductor substrate. The photodiode array is provided with metal photoshields, passivated, and, color filters are formed thereon. A transparent encapsulant is deposited to planarize the color filter layer and completes the solid-state color image-forming device without conventional convex microlenses.
摘要翻译：公开了一种有序的微电子制造顺序，其中滤色器通过直角沉积直接形成在CCD，CID或CMOS成像装置的光电检测器阵列上以形成凹入像素表面，并且覆盖有高透光率平面化膜指定的折射率和物理性质，其优化光收集到光电二极管而不需要额外的常规微透镜。光学平坦的顶表面用于封装和保护成像仪免受化学和热清洁处理损伤，最小化形成在非平面表面上的图像的像差或引起反射损失的形貌底层变化，并避免在切割和包装期间引起的残留颗粒夹杂物。通过在半导体衬底上光刻地构图光电二极管平面阵列来形成CCD成像器。光电二极管阵列设置有金属遮光罩，钝化，并且在其上形成滤色器。沉积透明密封剂以平坦化滤色器层并完成固态彩色图像形成装置，而不需要常规的凸起的微透镜。

3. 发明授权

US06372545B1 Method for under bump metal patterning of bumping process 有权
标题翻译：碰撞过程中碰撞下金属图案化的方法
公开(公告)号：US06372545B1
公开(公告)日：2002-04-16
申请号：US09814039
申请日：2001-03-22
申请人： Fu-Jier Fan , Kuo-Wei Lin , Yen-Ming Chen , Cheng-Yu Chu , Shih-Jane Lin , Chiou-Shian Peng , Yang-Tung Fan
发明人： Fu-Jier Fan , Kuo-Wei Lin , Yen-Ming Chen , Cheng-Yu Chu , Shih-Jane Lin , Chiou-Shian Peng , Yang-Tung Fan
IPC分类号： H01L2144
CPC分类号： H01L24/05 , H01L24/03 , H01L24/11 , H01L24/12 , H01L2224/0401 , H01L2224/05073 , H01L2224/05624 , H01L2224/05647 , H01L2224/1147 , H01L2224/11472 , H01L2224/11901 , H01L2224/13022 , H01L2224/13099 , H01L2224/131 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01072 , H01L2924/01082 , H01L2924/014 , H01L2924/05042 , H01L2924/19043 , H01L2924/00014
摘要： A method for forming an under bump metal, comprising the following steps. A semiconductor structure is provided having an exposed I/O pad. A patterned passivation layer is formed over the semiconductor structure, the patterned passivation layer having an opening exposing a first portion of the I/O pad. A dry film resistor (DFR) layer is laminated, exposed and developed to form a patterned dry film resistor (DFR) layer over the patterned passivation layer. The patterned dry film resistor (DFR) layer having an opening exposing a second portion of the I/O pad. The patterned dry film resistor (DFR) layer opening having opposing side walls with a predetermined profile with an undercut. A metal layer is formed over the patterned dry film resistor (DFR) layer, the exposed third portion of the I/O pad, and over at least a portion of the opposing side walls of the patterned dry film resistor (DFR) layer opening. The patterned dry film resistor (DFR) layer is lifted off, along with the metal layer over patterned dry film resistor (DFR) layer and over at least the portion of the opposing side walls, leaving the metal layer over the exposed second portion of the I/O pad. The metal layer over the exposed second portion of the I/O pad being an under bump metal.
摘要翻译：一种形成凸块下金属的方法，包括以下步骤。提供具有暴露的I / O焊盘的半导体结构。图案化的钝化层形成在半导体结构之上，图案化的钝化层具有暴露I / O焊盘的第一部分的开口。将干膜电阻（DFR）层层压，曝光和显影以在图案化的钝化层上形成图案化的干膜电阻（DFR）层。图案化的干膜电阻器（DFR）层具有露出I / O焊盘的第二部分的开口。图案化的干膜电阻（DFR）层开口具有相对的侧壁，具有预定的具有底切的轮廓。在图案化干膜电阻器（DFR）层，I / O焊盘的暴露的第三部分以及图案化干膜电阻器（DFR）层开口的相对侧壁的至少一部分之上形成金属层。图案化的干膜电阻器（DFR）层与图案化的干膜电阻器（DFR）层上的金属层一起被提起并且在至少相对的侧壁的部分之上，使得金属层在暴露的第二部分 I / O焊盘。 I / O焊盘暴露的第二部分上的金属层是凸块下金属。

4. 发明授权

US06876049B2 Colors only process to reduce package yield loss 失效
公开(公告)号：US06876049B2
公开(公告)日：2005-04-05
申请号：US10272136
申请日：2002-10-16
申请人： Yang-Tung Fan , Chiou-Shian Peng , Cheng-Yu Chu , Shih-Jane Lin , Yen-Ming Chen , Fu-Jier Fan , Kuo-Wei Lin
发明人： Yang-Tung Fan , Chiou-Shian Peng , Cheng-Yu Chu , Shih-Jane Lin , Yen-Ming Chen , Fu-Jier Fan , Kuo-Wei Lin
IPC分类号： G02F1/1335 , H01L21/00 , H01L27/146 , H01L31/0216 , H01L31/0232
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14645 , H01L31/02162 , H01L31/02327
摘要： Disclosed is an ordered microelectronic fabrication sequence in which color filters are formed by conformal deposition directly onto a photodetector array of a CCD, CID, or CMOS imaging device to create a concave-up pixel surface, and, overlayed with a high transmittance planarizing film of specified index of refraction and physical properties which optimize light collection to the photodiode without additional conventional microlenses. The optically flat top surface serves to encapsulate and protect the imager from chemical and thermal cleaning treatment damage, minimizes topographical underlayer variations which would aberrate or cause reflection losses of images formed on non-planar surfaces, and, obviates residual particle inclusions induced during dicing and packaging. A CCD imager is formed by photolithographically patterning a planar-array of photodiodes on a semiconductor substrate. The photodiode array is provided with metal photoshields, passivated, and, color filters are formed thereon. A transparent encapsulant is deposited to planarize the color filter layer and completes the solid-state color image-forming device without conventional convex microlenses.

5. 发明授权

US06649507B1 Dual layer photoresist method for fabricating a mushroom bumping plating structure 有权
标题翻译：双层光刻胶法制造蘑菇凸版电镀结构
公开(公告)号：US06649507B1
公开(公告)日：2003-11-18
申请号：US09883163
申请日：2001-06-18
申请人： Yen-Ming Chen , Cheng-Yu Chu , Kuo-Wei Lin , Chiou-Shian Peng , Yang-Tung Fan , Fu-Jier Fan , Shih-Jane Lin
发明人： Yen-Ming Chen , Cheng-Yu Chu , Kuo-Wei Lin , Chiou-Shian Peng , Yang-Tung Fan , Fu-Jier Fan , Shih-Jane Lin
IPC分类号： H01L2144
CPC分类号： H01L24/11 , H01L24/13 , H01L2224/05001 , H01L2224/05022 , H01L2224/05572 , H01L2224/1147 , H01L2224/13006 , H01L2224/13099 , H01L2224/131 , H01L2224/13111 , H01L2924/0001 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01059 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/00014 , H01L2924/01083
摘要： A method of forming a bump structure, comprising the following steps. A structure having an exposed first conductive structure is provided. A first photoresist layer is formed over the structure and the exposed first conductive structure. A second capping photoresist layer is formed over the first photoresist layer. The first and second photoresist layers being comprised of different photoresist materials. The first and second photoresist layers are patterned to form an opening through the first and second photoresist layers and over the first conductive structure. The second capping photoresist layer prevents excessive formation of first photoresist layer residue during processing. A second conductive structure is formed within the opening. The first and second patterned photoresist layers are stripped. The second conductive structure is reflowed to form the bump structure.
摘要翻译：一种形成凸块结构的方法，包括以下步骤。提供具有暴露的第一导电结构的结构。在结构和暴露的第一导电结构上形成第一光致抗蚀剂层。在第一光致抗蚀剂层上形成第二覆盖光致抗蚀剂层。第一和第二光致抗蚀剂层由不同的光致抗蚀剂材料组成。图案化第一和第二光致抗蚀剂层以形成穿过第一和第二光致抗蚀剂层并在第一导电结构上的开口。第二覆盖光致抗蚀剂层防止在处理期间过度形成第一光致抗蚀剂层残留物。在开口内形成第二导电结构。剥离第一和第二图案化的光致抗蚀剂层。第二导电结构被回流以形成凸块结构。

6. 发明授权

US06605524B1 Bumping process to increase bump height and to create a more robust bump structure 有权
标题翻译：凸起过程增加凸块高度并创建更坚固的凸块结构
公开(公告)号：US06605524B1
公开(公告)日：2003-08-12
申请号：US09950227
申请日：2001-09-10
申请人： Yang-Tung Fan , Cheng-Yu Chu , Fu-Jier Fan , Shih-Jane Lin , Chiou-Shian Peng , Yen-Ming Chen , Kuo-Wei Lin
发明人： Yang-Tung Fan , Cheng-Yu Chu , Fu-Jier Fan , Shih-Jane Lin , Chiou-Shian Peng , Yen-Ming Chen , Kuo-Wei Lin
IPC分类号： H01L2144
CPC分类号： H01L24/11 , H01L2224/03912 , H01L2224/0401 , H01L2224/05022 , H01L2224/05124 , H01L2224/05147 , H01L2224/05171 , H01L2224/05572 , H01L2224/05644 , H01L2224/05655 , H01L2224/1147 , H01L2224/1191 , H01L2224/13099 , H01L2224/45144 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01084 , H01L2924/014 , H01L2924/04941 , H01L2924/10253 , H01L2924/14 , H01L2924/00 , H01L2224/05552 , H01L2924/00014 , H01L2924/013
摘要： A new process is provided which is an extension and improvement of present processing for the creation of a solder bump. After the layers of Under Bump Metal and a layer of solder metal have been created in patterned and etched format and overlying the contact pad, following a conventional processing sequence, a layer of polyimide is deposited. The solder flow is performed using the thickness of the deposited layer of polyimide to control the height of the column underneath the reflown solder.
摘要翻译：提供了一种新的工艺，其是用于产生焊料凸块的当前处理的延伸和改进。在图形化和蚀刻形式下形成了凹凸金属层和焊料金属层之后，按照传统的处理顺序，沉积了一层聚酰亚胺。使用聚酰亚胺沉积层的厚度来进行焊料流动，以控制在重熔焊料下面的柱的高度。

7. 发明授权

US07485906B2 Colors only process to reduce package yield loss 有权
标题翻译：颜色只能减少包装产量损失
公开(公告)号：US07485906B2
公开(公告)日：2009-02-03
申请号：US11642225
申请日：2006-12-20
申请人： Yang-Tung Fan , Chiou-Shian Peng , Cheng-Yu Chu , Shih-Jane Lin , Yen-Ming Chen , Fu-Jier Fan , Kuo-Wei Lin
发明人： Yang-Tung Fan , Chiou-Shian Peng , Cheng-Yu Chu , Shih-Jane Lin , Yen-Ming Chen , Fu-Jier Fan , Kuo-Wei Lin
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14645 , H01L31/02162 , H01L31/02327
摘要： Disclosed is an ordered microelectronic fabrication sequence in which color filters are formed by conformal deposition directly onto a photodetector array of a CCD, CID, or CMOS imaging device to create a concave-up pixel surface, and, overlayed with a high transmittance planarizing film of specified index of refraction and physical properties which optimize light collection to the photodiode without additional conventional microlenses. The optically flat top surface serves to encapsulate and protect the imager from chemical and thermal cleaning treatment damage, minimizes topographical underlayer variations which would aberrate or cause reflection losses of images formed on non-planar surfaces, and, obviates residual particle inclusions induced during dicing and packaging. A CCD imager is formed by photolithographically patterning a planar-array of photodiodes on a semiconductor substrate. The photodiode array is provided with metal photoshields, passivated, and, color filters are formed thereon. A transparent encapsulant is deposited to planarize the color filter layer and completes the solid-state color image-forming device without conventional convex microlenses.
摘要翻译：公开了一种有序的微电子制造顺序，其中滤色器通过直角沉积直接形成在CCD，CID或CMOS成像装置的光电检测器阵列上以形成凹入像素表面，并且覆盖有高透光率平面化膜指定的折射率和物理性质，其优化光收集到光电二极管而不需要额外的常规微透镜。光学平坦的顶表面用于封装和保护成像器免受化学和热清洁处理损伤，最小化形成的底层变化，其将形成在非平面表面上的图像的像差或引起反射损失，并且消除在切割期间引起的残留颗粒夹杂物，打包。通过在半导体衬底上光刻地构图光电二极管平面阵列来形成CCD成像器。光电二极管阵列设置有金属遮光罩，钝化，并且在其上形成滤色器。沉积透明密封剂以平坦化滤色器层并完成固态彩色图像形成装置，而不需要常规的凸起的微透镜。

8. 发明授权

US06426283B1 Method for bumping and backlapping a semiconductor wafer 有权
标题翻译：用于凸起和重叠半导体晶片的方法
公开(公告)号：US06426283B1
公开(公告)日：2002-07-30
申请号：US09727832
申请日：2000-12-01
申请人： Yen-Ming Chen , Kuo-Wei Lin , Cheng-Yu Chu , Fu-Jier Fan , Yang-Tung Fan , Chiou-Shian Peng , Shih-Jane Lin
发明人： Yen-Ming Chen , Kuo-Wei Lin , Cheng-Yu Chu , Fu-Jier Fan , Yang-Tung Fan , Chiou-Shian Peng , Shih-Jane Lin
IPC分类号： H01L2144
CPC分类号： H01L24/11 , H01L2224/05001 , H01L2224/05022 , H01L2224/05023 , H01L2224/05027 , H01L2224/0508 , H01L2224/05568 , H01L2224/05572 , H01L2224/1147 , H01L2224/13099 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2224/05647 , H01L2924/00014 , H01L2224/05655 , H01L2224/05124 , H01L2224/05166 , H01L2224/05171
摘要： A method for bumping and backlapping a semiconductor wafer that has a multiplicity of solder bumps formed on an active surface of the wafer is disclosed. In the method, a preprocessed wafer that has a multiplicity of bond pads formed on a top surface is first provided, a under-bump-metallurgy (UBM) layer is then sputter deposited on top of the wafer surface, followed by the lamination of a dry film resist layer on top of the UBM layer. The dry film resist layer is then patterned with a multiplicity of openings exposing the multiplicity of bond pads, followed by the deposition of a solder material into the multiplicity of openings to form the solder bump's. A protective tape is then adhesively bonded to the top of the dry film resist layer before the wafer is positioned into a backlapping apparatus for removing of a preselected thickness from the backside of the wafer. After the completion of the backside lapping process, the protective tape and the dry film resist layer are stripped away sequentially and the solder bumps are reflown into solder balls. The present invention novel method effectively prevents any damages to. the solder balls during the backlapping process since the solder bumps are well protected by the dry film resist layer during such process.
摘要翻译：公开了一种在晶片的有效表面上形成有多个焊料凸起的半导体晶片的凸起和反覆的方法。在该方法中，首先提供具有形成在顶表面上的多个接合焊盘的预处理晶片，然后溅射沉积凸块下冶金（UBM）层，然后溅射沉积在晶片表面上，然后层压 UBM层顶部的干膜抗蚀剂层。然后将干膜抗蚀剂层用暴露多个接合焊盘的多个开口图案化，随后将焊料材料沉积到多个开口中以形成焊料凸块。然后将保护带粘合到干膜抗蚀剂层的顶部，然后将晶片定位到用于从晶片的背面除去预选厚度的重叠装置。在完成背面研磨处理之后，依次剥离保护带和干膜抗蚀剂层，并将焊料凸点重新焊接到焊球中。本发明新颖的方法有效地防止了任何损害。由于焊料凸块在这种工艺期间被干膜抗蚀剂层良好地保护，所以在重叠过程期间的焊球。

9. 发明申请

US20090111208A1 COLORS ONLY PROCESS TO REDUCE PACKAGE YIELD LOSS 有权
标题翻译：颜色只有减少包装损失的过程
公开(公告)号：US20090111208A1
公开(公告)日：2009-04-30
申请号：US12347468
申请日：2008-12-31
申请人： Yang-Tung FAN , Chiou-Shian Peng , Cheng-Yu Chu , Shih-Jane Lin , Yen-Ming Chen , Fu-Jier Fan , Kuo-Wei Lin
发明人： Yang-Tung FAN , Chiou-Shian Peng , Cheng-Yu Chu , Shih-Jane Lin , Yen-Ming Chen , Fu-Jier Fan , Kuo-Wei Lin
IPC分类号： H01L31/18
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14645 , H01L31/02162 , H01L31/02327
摘要： Disclosed is an ordered microelectronic fabrication sequence in which color filters are formed by conformal deposition directly onto a photodetector array of a CCD, CID, or CMOS imaging device to create a concave-up pixel surface, and, overlayed with a high transmittance planarizing film of specified index of refraction and physical properties which optimize light collection to the photodiode without additional conventional microlenses. The optically flat top surface serves to encapsulate and protect the imager from chemical and thermal cleaning treatment damage, minimizes topographical underlayer variations which would aberrate or cause reflection losses of images formed on non-planar surfaces, and, obviates residual particle inclusions induced during dicing and packaging. A CCD imager is formed by photolithographically patterning a planar-array of photodiodes on a semiconductor substrate. The photodiode array is provided with metal photoshields, passivated, and, color filters are formed thereon. A transparent encapsulant is deposited to planarize the color filter layer and completes the solid-state color image-forming device without conventional convex microlenses.
摘要翻译：公开了一种有序的微电子制造顺序，其中滤色器通过直角沉积直接形成在CCD，CID或CMOS成像装置的光电检测器阵列上以形成凹入像素表面，并且覆盖有高透光率平面化膜指定的折射率和物理性质，其优化光收集到光电二极管而不需要额外的常规微透镜。光学平坦的顶表面用于封装和保护成像器免受化学和热清洁处理损伤，最小化形成的底层变化，其将形成在非平面表面上的图像的像差或引起反射损失，并且消除在切割期间引起的残留颗粒夹杂物，打包。通过在半导体衬底上光刻地构图光电二极管平面阵列来形成CCD成像器。光电二极管阵列设置有金属遮光罩，钝化，并且在其上形成滤色器。沉积透明密封剂以平坦化滤色器层并完成固态彩色图像形成装置，而不需要常规的凸起的微透镜。

10. 发明授权

US07183598B2 Colors only process to reduce package yield loss 有权
标题翻译：颜色只能减少包装产量损失
公开(公告)号：US07183598B2
公开(公告)日：2007-02-27
申请号：US11037445
申请日：2005-01-18
申请人： Yang-Tung Fan , Chiou-Shian Peng , Cheng-Yu Chu , Shih-Jane Lin , Yen-Ming Chen , Fu-Jier Fan , Kuo-Wei Lin
发明人： Yang-Tung Fan , Chiou-Shian Peng , Cheng-Yu Chu , Shih-Jane Lin , Yen-Ming Chen , Fu-Jier Fan , Kuo-Wei Lin
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14645 , H01L31/02162 , H01L31/02327
摘要： Disclosed is an ordered microelectronic fabrication sequence in which color filters are formed by conformal deposition directly onto a photodetector array of a CCD, CID, or CMOS imaging device to create a concave-up pixel surface, and, overlayed with a high transmittance planarizing film of specified index of refraction and physical properties which optimize light collection to the photodiode without additional conventional microlenses. The optically flat top surface serves to encapsulate and protect the imager from chemical and thermal cleaning treatment damage, minimizes topographical underlayer variations which would aberrate or cause reflection losses of images formed on non-planar surfaces, and, obviates residual particle inclusions induced during dicing and packaging. A CCD imager is formed by photolithographically patterning a planar-array of photodiodes on a semiconductor substrate. The photodiode array is provided with metal photoshields, passivated, and, color filters are formed thereon. A transparent encapsulant is deposited to planarize the color filter layer and completes the solid-state color image-forming device without conventional convex microlenses.
摘要翻译：公开了一种有序的微电子制造顺序，其中滤色器通过直角沉积直接形成在CCD，CID或CMOS成像装置的光电检测器阵列上以形成凹入像素表面，并且覆盖有高透光率平面化膜指定的折射率和物理性质，其优化光收集到光电二极管而不需要额外的常规微透镜。光学平坦的顶表面用于封装和保护成像器免受化学和热清洁处理损伤，最小化形成的底层变化，其将形成在非平面表面上的图像的像差或引起反射损失，并且消除在切割期间引起的残留颗粒夹杂物，打包。通过在半导体衬底上光刻地构图光电二极管平面阵列来形成CCD成像器。光电二极管阵列设置有金属遮光罩，钝化，并且在其上形成滤色器。沉积透明密封剂以平坦化滤色器层并完成固态彩色图像形成装置，而不需要常规的凸起的微透镜。

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