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1. 发明授权

US5971805A Modular jack with filter insert 失效
标题翻译：带滤芯的模块插座
公开(公告)号：US5971805A
公开(公告)日：1999-10-26
申请号：US863654
申请日：1997-05-27
申请人： Yakov Belopolsky , Robert E. Marshall , James A. Somerville , Gary J. Oleynick , Lee W. Potteiger , John M. Spickler , Ronald A. Shutter , Miguel A. Contreras
发明人： Yakov Belopolsky , Robert E. Marshall , James A. Somerville , Gary J. Oleynick , Lee W. Potteiger , John M. Spickler , Ronald A. Shutter , Miguel A. Contreras
IPC分类号： H01R13/33 , H01R13/66 , H01R13/719 , H01R24/00 , H01R24/64
CPC分类号： H01R13/719 , H01R24/64 , Y10S439/941
摘要： The present invention is a modular jack assembly which includes an outer insulative housing having top and bottom walls and opposed lateral walls while defining an interior section. This housing also has front and rear open ends. This assembly also includes an insulative insert having a top section, an upper side and a rear section having a base side and a recess. This jack is positioned so that the upper side of its top section is adjacent to top side of the insulative housing such that its terminal end extends into the interior section of the insulative housing and the rear section at least partially covers the rear open end of the insulative housing. This assembly also includes an electronic component mounted in the recess in the rear section of the insulative insert. A conductor is mounted in the electrical insert.
摘要翻译：本发明是一种模块化插座组件，其包括具有顶壁和底壁以及相对的侧壁同时限定内部部分的外绝缘外壳。该外壳还具有前端和后端开口端。该组件还包括具有顶部，上侧和后部的绝缘插入件，其具有基部侧和凹部。这个千斤顶定位成使得其顶部的上侧邻近绝缘壳体的顶侧，使得其顶端延伸到绝缘壳体的内部部分中，并且后部部分至少部分地覆盖绝缘壳体的后开口端绝缘住房该组件还包括安装在绝缘插入件的后部中的凹部中的电子部件。导体安装在电气插件中。

2. 发明授权

US6159050A Modular jack with filter insert 有权
标题翻译：带滤芯的模块插座
公开(公告)号：US6159050A
公开(公告)日：2000-12-12
申请号：US349738
申请日：1999-07-08
申请人： Yakov Belopolsky , Robert E. Marshall , James A. Somerville , Gary J. Oleynick , Lee W. Potteiger , John M. Spickler , Ronald A. Shutter , Miguel A. Contreras
发明人： Yakov Belopolsky , Robert E. Marshall , James A. Somerville , Gary J. Oleynick , Lee W. Potteiger , John M. Spickler , Ronald A. Shutter , Miguel A. Contreras
IPC分类号： H01R13/33 , H01R13/66 , H01R13/719 , H01R24/00 , H01R24/64
CPC分类号： H01R13/719 , H01R24/64 , Y10S439/941
摘要： The present invention is a modular jack assembly which includes an outer insulative housing having top and bottom walls and opposed lateral walls while defining an interior section. This housing also has front and rear open ends. This assembly also includes an insulative insert having a top section, an upper side and rear section having a base side and a recess. This jack is positioned so that the upper side of its top section is adjacent to top side of the insulative housing such that its terminal end extends into the interior section of the insulative housing and the rear section at least partially covers the rear open end of the insulative housing. This assembly also includes an electronic component mounted in the rear section of the insulative insert. A conductor is mounted in the electrical insert.
摘要翻译：本发明是一种模块化插座组件，其包括具有顶壁和底壁以及相对的侧壁同时限定内部部分的外绝缘外壳。该外壳还具有前端和后端开口端。该组件还包括具有顶部的绝缘插入件，具有底侧和凹部的上侧和后区。这个千斤顶定位成使得其顶部的上侧邻近绝缘壳体的顶侧，使得其顶端延伸到绝缘壳体的内部部分中，并且后部部分至少部分地覆盖绝缘壳体的后开口端绝缘住房该组件还包括安装在绝缘插入件的后部中的电子部件。导体安装在电气插件中。

3. 发明授权

US5948176A Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells 失效
标题翻译： CuInSe2薄膜太阳能电池的无镉结制造工艺
公开(公告)号：US5948176A
公开(公告)日：1999-09-07
申请号：US939844
申请日：1997-09-29
申请人： Kannan V. Ramanathan , Miguel A. Contreras , Raghu N. Bhattacharya , James Keane , Rommel Noufi
发明人： Kannan V. Ramanathan , Miguel A. Contreras , Raghu N. Bhattacharya , James Keane , Rommel Noufi
IPC分类号： H01L31/032 , H01L31/0336 , H01L31/00
CPC分类号： H01L31/0749 , H01L31/0323 , Y02E10/541 , Y02P70/521
摘要： The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.
摘要翻译：本发明提供了一种经济，简单，干燥和可控制的半导体层结形成工艺，其制造不含镉的高效光伏电池，其具有主要由铜铟二硒化物组成的第一层，其具有通过热产生的薄掺杂铜铟二硒化物n型区域与II族（b）元素如锌的扩散，以及卤化物如氯，以及由常规的氧化锌双层组成的第二层。根据本发明的光电器件包括主要由铜铟二硒化物形成的半导体材料的第一薄膜层。使用氯化锌溶液或固体氯化锌材料，可以用氯化锌掺杂二硒化铜铟。氯化锌向铜铟锡上部区域的热扩散产生薄的n型铜铟二硒化物表面。然后将包含氧化锌的半导体材料的第二薄膜层分两层施加。第一层包括一层高电阻率的氧化锌。第二较厚的氧化锌层被掺杂以显示低电阻率。

4. 发明授权

US5804054A Preparation of copper indium gallium diselenide films for solar cells 失效
标题翻译：太阳能电池用铜铟镓二硒膜的制备
公开(公告)号：US5804054A
公开(公告)日：1998-09-08
申请号：US979358
申请日：1997-11-26
申请人： Raghu N. Bhattacharya , Miguel A. Contreras , James Keane , Andrew L. Tennant , John R. Tuttle , Kannan Ramanathan , Rommel Noufi
发明人： Raghu N. Bhattacharya , Miguel A. Contreras , James Keane , Andrew L. Tennant , John R. Tuttle , Kannan Ramanathan , Rommel Noufi
IPC分类号： C25D3/56 , C23C28/02 , C25D5/18 , C25D7/12 , G03C1/22 , H01L21/36 , H01L21/363 , H01L21/365 , H01L31/032 , H01L31/0336 , H01L31/04 , H01L31/18
CPC分类号： H01L31/0749 , C23C28/023 , C25D5/18 , G03C1/22 , H01L21/02422 , H01L21/02568 , H01L21/02614 , H01L21/02628 , H01L31/0322 , C25D3/56 , Y02E10/541 , Y10S205/915 , Y10S438/93
摘要： High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.
摘要翻译：通过将至少一种组成金属电沉积到玻璃/ Mo基板上，然后物理气相沉积铜和硒或铟和硒，制备可用于生产太阳能电池的铜铟镓二硒化物的高质量薄膜以将薄膜的最终化学计量调整为近似Cu（In，Ga）Se2。使用1-100KHz的交流电压与用于电沉积的直流电压组合可以改善沉积薄膜的形态和生长速率。包含至少部分有机溶剂的电沉积溶液可以与增加的阴极电势结合使用，以增加电沉积薄膜的镓含量。

5. 发明授权

US5356839A Enhanced quality thin film Cu(In,Ga)Se.sub.2 for semiconductor device applications by vapor-phase recrystallization 失效
标题翻译：通过气相重结晶提高半导体器件应用的优质薄膜Cu（In，Ga）Se2
公开(公告)号：US5356839A
公开(公告)日：1994-10-18
申请号：US45860
申请日：1993-04-12
申请人： John R. Tuttle , Miguel A. Contreras , Rommel Noufi , David S. Albin
发明人： John R. Tuttle , Miguel A. Contreras , Rommel Noufi , David S. Albin
IPC分类号： C01B19/00 , C01G3/00 , C23C14/34 , C23C30/00 , H01L21/20 , H01L21/203 , H01L21/205 , H01L21/263 , H01L21/363 , H01L31/0296 , H01L31/032 , H01L31/04 , H01L21/302
CPC分类号： H01L31/0322 , Y02E10/541 , Y02P70/521 , Y10S438/93
摘要： Enhanced quality thin films of Cu.sub.w (In,Ga.sub.y)Se.sub.z for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu.sub.x Se on a substrate to form a large-grain precursor and then converting the excess Cu.sub.x Se to Cu(In,Ga)Se.sub.2 by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga).sub.y Se.sub.z. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300.degree.-600.degree. C., where the Cu(In,Ga)Se.sub.2 remains solid, while the excess Cu.sub.x Se is in a liquid flux. The characteristic of the resulting Cu.sub.w (In,Ga).sub.y Se.sub.z can be controlled by the temperature. Higher temperatures, such as 500.degree.-600.degree. C., result in a nearly stoichiometric Cu(In,Ga)Se.sub.2, whereas lower temperatures, such as 300.degree.-400.degree. C., result in a more Cu-poor compound, such as the Cu.sub.z (In,Ga).sub.4 Se.sub.7 phase.
摘要翻译：通过在衬底上初始形成包含Cu（In，Ga）：CuxSe的富Cu相分离的化合物混合物来制造用于半导体器件应用的Cuw（In，Gay）Sez的增强的优质薄膜，以形成大颗粒前体然后通过在蒸气In和/或Ga形式或固体（In，Ga）ySez中将其暴露于In和/或Ga的活性，将过量的CuxSe转化为Cu（In，Ga）Se2。或者，可以通过将In和/或Ga和Se顺序沉积到相分离的前体上进行转化。转化过程优选在约300-600℃的温度范围内进行，其中Cu（In，Ga）Se2保持固体，而过量的CuxSe处于液体通量。所得Cuw（In，Ga）ySez的特征可以由温度控制。较高的温度，例如500°-600℃，导致近似化学计量的Cu（In，Ga）Se2，而较低的温度，例如300°-400℃，会导致更多的Cu-不良化合物作为Cuz（In，Ga）4Se7相。

6. 发明授权

US5730852A Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells 失效
标题翻译：通过电沉积制备高效太阳能电池的cuxinygazsen（X = 0-2，Y = 0-2，Z = 0-2，N = 0-3）前体膜
公开(公告)号：US5730852A
公开(公告)日：1998-03-24
申请号：US571150
申请日：1995-12-12
申请人： Raghu N. Bhattacharya , Miguel A. Contreras , James Keane , Andrew L. Tennant , John R. Tuttle , Kannan Ramanathan , Rommel Noufi
发明人： Raghu N. Bhattacharya , Miguel A. Contreras , James Keane , Andrew L. Tennant , John R. Tuttle , Kannan Ramanathan , Rommel Noufi
IPC分类号： C25D3/56 , C23C28/02 , C25D5/18 , C25D7/12 , G03C1/22 , H01L21/36 , H01L21/363 , H01L21/365 , H01L31/032 , H01L31/0336 , H01L31/04 , H01L31/18
CPC分类号： H01L31/0749 , C23C28/023 , C25D5/18 , G03C1/22 , H01L21/02422 , H01L21/02568 , H01L21/02614 , H01L21/02628 , H01L31/0322 , C25D3/56 , Y02E10/541 , Y10S205/915 , Y10S438/93
摘要： High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.
摘要翻译：通过将至少一种组成金属电沉积到玻璃/ Mo基板上，然后物理气相沉积铜和硒或铟和硒，制备可用于生产太阳能电池的铜铟镓二硒化物的高质量薄膜以将薄膜的最终化学计量调整为近似Cu（In，Ga）Se2。使用1-100KHz的交流电压与用于电沉积的直流电压组合可以改善沉积薄膜的形态和生长速率。包含至少部分有机溶剂的电沉积溶液可以与增加的阴极电势结合使用，以增加电沉积薄膜的镓含量。

7. 发明授权

US5441897A Method of fabricating high-efficiency Cu(In,Ga)(SeS).sub.2 thin films for solar cells 失效
标题翻译：制造太阳能电池用高效Cu（In，Ga）（SeS）2薄膜的方法
公开(公告)号：US5441897A
公开(公告)日：1995-08-15
申请号：US197204
申请日：1994-02-16
申请人： Rommel Noufi , Andrew M. Gabor , John R. Tuttle , Andrew L. Tennant , Miguel A. Contreras , David S. Albin , Jeffrey J. Carapella
发明人： Rommel Noufi , Andrew M. Gabor , John R. Tuttle , Andrew L. Tennant , Miguel A. Contreras , David S. Albin , Jeffrey J. Carapella
IPC分类号： C01B19/00 , C01G3/00 , C23C14/34 , C23C30/00 , H01L21/20 , H01L21/203 , H01L21/205 , H01L21/263 , H01L21/363 , H01L31/0296 , H01L31/032 , H01L31/04 , H01L31/18
CPC分类号： H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S).sub.2 comprises depositing a first layer of (In,Ga).sub.x (Se,S).sub.y followed by depositing just enough Cu+(Se,S) or Cu.sub.x (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga).sub.x (Se,S).sub.y is deposited first, followed by deposition of all the Cu+(Se,S) or Cu.sub.x (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu.sub.x (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga).sub.x (Se,S).sub.y to go slightly Cu-poor in the final Cu(In,Ga)(Se,S).sub.2 thin film.
摘要翻译：制备Cu（In，Ga）（Se，S）2的略微不合Cu的薄膜的方法包括沉积（In，Ga）x（Se，S）y的第一层，然后沉积足够的Cu +（Se ，S）或Cux（Se，S），以产生所需的略微贫铜材料。在一个变化中，首先沉积（In，Ga）x（Se，S）y的大部分但不是全部（约90-99％），然后沉积所有Cu +（Se，S）或Cux Se，S）接近化学计量，可能甚至优选略微富含Cu，然后依次沉积（In，Ga）x（Se，S）y的余量（约1至10％）至以稍微不合铜的组成结束。在另一个变型中，首先将（In，Ga）x（Se，S）y的一小部分（约1至10％）沉积为种子层，随后沉积所有Cu +（Se，S）或Cux（Se，S）以制备非常富Cu的混合物，然后在（In，Ga）x（Se，S）y的剩余部分沉积后，在最终的Cu（In， Ga）（Se，S）2薄膜。

8. 发明授权

US5436204A Recrystallization method to selenization of thin-film Cu(In,Ga)Se.sub.2 for semiconductor device applications 失效
标题翻译：用于半导体器件应用的薄膜Cu（In，Ga）Se2的硒化的重结晶方法
公开(公告)号：US5436204A
公开(公告)日：1995-07-25
申请号：US293826
申请日：1994-08-22
申请人： David S. Albin , Jeffrey J. Carapella , John R. Tuttle , Miguel A. Contreras , Andrew M. Gabor , Rommel Noufi , Andrew L. Tennant
发明人： David S. Albin , Jeffrey J. Carapella , John R. Tuttle , Miguel A. Contreras , Andrew M. Gabor , Rommel Noufi , Andrew L. Tennant
IPC分类号： C01B19/00 , C01G3/00 , C23C14/34 , C23C30/00 , H01L21/20 , H01L21/203 , H01L21/205 , H01L21/263 , H01L21/363 , H01L31/0296 , H01L31/032 , H01L31/04 , H01L21/302
CPC分类号： H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： A process for fabricating slightly Cu-poor thin-films of Cu(In,Ga)Se.sub.2 on a substrate for semiconductor device applications includes the steps of forming initially a slightly Cu-rich, phase separated, mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se on the substrate in solid form followed by exposure of the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture to an overpressure of Se vapor and (In,Ga) vapor for deposition on the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture while simultaneously increasing the temperature of the solid mixture toward a recrystallization temperature (about 550.degree. C.) at which Cu(In,Ga)Se.sub.2 is solid and Cu.sub.x Se is liquid. The (In,Ga) flux is terminated while the Se overpressure flux and the recrystallization temperature are maintained to recrystallize the Cu.sub.x Se with the (In, Ga) that was deposited during the temperature transition and with the Se vapor to form the thin-film of slightly Cu-poor Cu.sub.x (In,Ga).sub.y Se.sub.z. The initial Cu-rich, phase separated large grain mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se can be made by sequentially depositing or co-depositing the metal precursors, Cu and (In, Ga), on the substrate at room temperature, ramping up the thin-film temperature in the presence of Se overpressure to a moderate anneal temperature (about 450.degree. C.) and holding that temperature and the Se overpressure for an annealing period. A nonselenizing, low temperature anneal at about 100.degree. C. can also be used to homogenize the precursors on the substrates before the selenizing, moderate temperature anneal.
摘要翻译：在用于半导体器件的衬底上制造Cu（In，Ga）Se2的略微不合铜的薄膜的工艺包括以下步骤：首先形成Cu（In，Ga）Se 2的稍微富Cu，相分离的混合物：在固体形式的衬底上，然后将Cu（In，Ga）Se 2：CuxSe固体混合物暴露于Se蒸气和（In，Ga）蒸气的过压，沉积在Cu（In，Ga）Se 2：CuxSe上固体混合物同时将固体混合物的温度升高至重结晶温度（约550℃），其中Cu（In，Ga）Se 2为固体，CuxSe为液体。（In，Ga）通量终止，同时保持Se超压通量和再结晶温度，以在温度转变期间沉积的（In，Ga）和Se蒸气重结晶CuxSe，形成薄膜轻微Cu-Cux（In，Ga）ySez。 Cu（In，Ga）Se2：CuxSe的初始富Cu相分离的大晶粒混合物可以通过在室温下依次沉积或共沉积金属前体Cu和（In，Ga）在存在Se超压的情况下将薄膜温度升高到适度退火温度（约450℃），并保持该温度和Se超压退火时间。在硒化，中等温度退火之前，也可以在约100℃下进行非硒化低温退火，以使基板上的前体均匀化。

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