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1. 发明申请

US20050074915A1 Thin-film solar cell fabricated on a flexible metallic substrate 有权
标题翻译：在柔性金属基板上制造的薄膜太阳能电池
公开(公告)号：US20050074915A1
公开(公告)日：2005-04-07
申请号：US10480880
申请日：2001-07-13
申请人： John Tuttle , Rommel Noufi , Falah Hasoon
发明人： John Tuttle , Rommel Noufi , Falah Hasoon
IPC分类号： H01L21/00 , H01L31/032 , H01L31/0392
CPC分类号： H01L31/0322 , H01L31/03928 , Y02E10/541
摘要： A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) a having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).
摘要翻译：提供薄膜太阳能电池（10）。薄膜太阳能电池（10）包括具有第一表面和第二表面的柔性金属基底（12）。在柔性金属基板（12）的第一表面上沉积背金属接触层（16）。半导体吸收层（14）沉积在背面金属触点上。沉积在半导体吸收层（14）上的光敏膜形成异相结构和沉积在异质结结构上的栅极接触（24）。柔性金属基底（12）可由铝或不锈钢构成。此外，提供了构造太阳能电池的方法。该方法包括提供铝基板（12），在铝基板（12）上沉积半导体吸收层（14），并将铝基板（12）与半导体吸收层（14）绝缘，以抑制铝基板（12）和半导体吸收层（14）。

2. 发明授权

US5948176A Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells 失效
标题翻译： CuInSe2薄膜太阳能电池的无镉结制造工艺
公开(公告)号：US5948176A
公开(公告)日：1999-09-07
申请号：US939844
申请日：1997-09-29
申请人： Kannan V. Ramanathan , Miguel A. Contreras , Raghu N. Bhattacharya , James Keane , Rommel Noufi
发明人： Kannan V. Ramanathan , Miguel A. Contreras , Raghu N. Bhattacharya , James Keane , Rommel Noufi
IPC分类号： H01L31/032 , H01L31/0336 , H01L31/00
CPC分类号： H01L31/0749 , H01L31/0323 , Y02E10/541 , Y02P70/521
摘要： The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.
摘要翻译：本发明提供了一种经济，简单，干燥和可控制的半导体层结形成工艺，其制造不含镉的高效光伏电池，其具有主要由铜铟二硒化物组成的第一层，其具有通过热产生的薄掺杂铜铟二硒化物n型区域与II族（b）元素如锌的扩散，以及卤化物如氯，以及由常规的氧化锌双层组成的第二层。根据本发明的光电器件包括主要由铜铟二硒化物形成的半导体材料的第一薄膜层。使用氯化锌溶液或固体氯化锌材料，可以用氯化锌掺杂二硒化铜铟。氯化锌向铜铟锡上部区域的热扩散产生薄的n型铜铟二硒化物表面。然后将包含氧化锌的半导体材料的第二薄膜层分两层施加。第一层包括一层高电阻率的氧化锌。第二较厚的氧化锌层被掺杂以显示低电阻率。

3. 发明授权

US5730852A Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells 失效
标题翻译：通过电沉积制备高效太阳能电池的cuxinygazsen（X = 0-2，Y = 0-2，Z = 0-2，N = 0-3）前体膜
公开(公告)号：US5730852A
公开(公告)日：1998-03-24
申请号：US571150
申请日：1995-12-12
申请人： Raghu N. Bhattacharya , Miguel A. Contreras , James Keane , Andrew L. Tennant , John R. Tuttle , Kannan Ramanathan , Rommel Noufi
发明人： Raghu N. Bhattacharya , Miguel A. Contreras , James Keane , Andrew L. Tennant , John R. Tuttle , Kannan Ramanathan , Rommel Noufi
IPC分类号： C25D3/56 , C23C28/02 , C25D5/18 , C25D7/12 , G03C1/22 , H01L21/36 , H01L21/363 , H01L21/365 , H01L31/032 , H01L31/0336 , H01L31/04 , H01L31/18
CPC分类号： H01L31/0749 , C23C28/023 , C25D5/18 , G03C1/22 , H01L21/02422 , H01L21/02568 , H01L21/02614 , H01L21/02628 , H01L31/0322 , C25D3/56 , Y02E10/541 , Y10S205/915 , Y10S438/93
摘要： High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.
摘要翻译：通过将至少一种组成金属电沉积到玻璃/ Mo基板上，然后物理气相沉积铜和硒或铟和硒，制备可用于生产太阳能电池的铜铟镓二硒化物的高质量薄膜以将薄膜的最终化学计量调整为近似Cu（In，Ga）Se2。使用1-100KHz的交流电压与用于电沉积的直流电压组合可以改善沉积薄膜的形态和生长速率。包含至少部分有机溶剂的电沉积溶液可以与增加的阴极电势结合使用，以增加电沉积薄膜的镓含量。

4. 发明授权

US5441897A Method of fabricating high-efficiency Cu(In,Ga)(SeS).sub.2 thin films for solar cells 失效
标题翻译：制造太阳能电池用高效Cu（In，Ga）（SeS）2薄膜的方法
公开(公告)号：US5441897A
公开(公告)日：1995-08-15
申请号：US197204
申请日：1994-02-16
申请人： Rommel Noufi , Andrew M. Gabor , John R. Tuttle , Andrew L. Tennant , Miguel A. Contreras , David S. Albin , Jeffrey J. Carapella
发明人： Rommel Noufi , Andrew M. Gabor , John R. Tuttle , Andrew L. Tennant , Miguel A. Contreras , David S. Albin , Jeffrey J. Carapella
IPC分类号： C01B19/00 , C01G3/00 , C23C14/34 , C23C30/00 , H01L21/20 , H01L21/203 , H01L21/205 , H01L21/263 , H01L21/363 , H01L31/0296 , H01L31/032 , H01L31/04 , H01L31/18
CPC分类号： H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S).sub.2 comprises depositing a first layer of (In,Ga).sub.x (Se,S).sub.y followed by depositing just enough Cu+(Se,S) or Cu.sub.x (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga).sub.x (Se,S).sub.y is deposited first, followed by deposition of all the Cu+(Se,S) or Cu.sub.x (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu.sub.x (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga).sub.x (Se,S).sub.y to go slightly Cu-poor in the final Cu(In,Ga)(Se,S).sub.2 thin film.
摘要翻译：制备Cu（In，Ga）（Se，S）2的略微不合Cu的薄膜的方法包括沉积（In，Ga）x（Se，S）y的第一层，然后沉积足够的Cu +（Se ，S）或Cux（Se，S），以产生所需的略微贫铜材料。在一个变化中，首先沉积（In，Ga）x（Se，S）y的大部分但不是全部（约90-99％），然后沉积所有Cu +（Se，S）或Cux Se，S）接近化学计量，可能甚至优选略微富含Cu，然后依次沉积（In，Ga）x（Se，S）y的余量（约1至10％）至以稍微不合铜的组成结束。在另一个变型中，首先将（In，Ga）x（Se，S）y的一小部分（约1至10％）沉积为种子层，随后沉积所有Cu +（Se，S）或Cux（Se，S）以制备非常富Cu的混合物，然后在（In，Ga）x（Se，S）y的剩余部分沉积后，在最终的Cu（In， Ga）（Se，S）2薄膜。

5. 发明授权

US5436204A Recrystallization method to selenization of thin-film Cu(In,Ga)Se.sub.2 for semiconductor device applications 失效
标题翻译：用于半导体器件应用的薄膜Cu（In，Ga）Se2的硒化的重结晶方法
公开(公告)号：US5436204A
公开(公告)日：1995-07-25
申请号：US293826
申请日：1994-08-22
申请人： David S. Albin , Jeffrey J. Carapella , John R. Tuttle , Miguel A. Contreras , Andrew M. Gabor , Rommel Noufi , Andrew L. Tennant
发明人： David S. Albin , Jeffrey J. Carapella , John R. Tuttle , Miguel A. Contreras , Andrew M. Gabor , Rommel Noufi , Andrew L. Tennant
IPC分类号： C01B19/00 , C01G3/00 , C23C14/34 , C23C30/00 , H01L21/20 , H01L21/203 , H01L21/205 , H01L21/263 , H01L21/363 , H01L31/0296 , H01L31/032 , H01L31/04 , H01L21/302
CPC分类号： H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： A process for fabricating slightly Cu-poor thin-films of Cu(In,Ga)Se.sub.2 on a substrate for semiconductor device applications includes the steps of forming initially a slightly Cu-rich, phase separated, mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se on the substrate in solid form followed by exposure of the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture to an overpressure of Se vapor and (In,Ga) vapor for deposition on the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture while simultaneously increasing the temperature of the solid mixture toward a recrystallization temperature (about 550.degree. C.) at which Cu(In,Ga)Se.sub.2 is solid and Cu.sub.x Se is liquid. The (In,Ga) flux is terminated while the Se overpressure flux and the recrystallization temperature are maintained to recrystallize the Cu.sub.x Se with the (In, Ga) that was deposited during the temperature transition and with the Se vapor to form the thin-film of slightly Cu-poor Cu.sub.x (In,Ga).sub.y Se.sub.z. The initial Cu-rich, phase separated large grain mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se can be made by sequentially depositing or co-depositing the metal precursors, Cu and (In, Ga), on the substrate at room temperature, ramping up the thin-film temperature in the presence of Se overpressure to a moderate anneal temperature (about 450.degree. C.) and holding that temperature and the Se overpressure for an annealing period. A nonselenizing, low temperature anneal at about 100.degree. C. can also be used to homogenize the precursors on the substrates before the selenizing, moderate temperature anneal.
摘要翻译：在用于半导体器件的衬底上制造Cu（In，Ga）Se2的略微不合铜的薄膜的工艺包括以下步骤：首先形成Cu（In，Ga）Se 2的稍微富Cu，相分离的混合物：在固体形式的衬底上，然后将Cu（In，Ga）Se 2：CuxSe固体混合物暴露于Se蒸气和（In，Ga）蒸气的过压，沉积在Cu（In，Ga）Se 2：CuxSe上固体混合物同时将固体混合物的温度升高至重结晶温度（约550℃），其中Cu（In，Ga）Se 2为固体，CuxSe为液体。（In，Ga）通量终止，同时保持Se超压通量和再结晶温度，以在温度转变期间沉积的（In，Ga）和Se蒸气重结晶CuxSe，形成薄膜轻微Cu-Cux（In，Ga）ySez。 Cu（In，Ga）Se2：CuxSe的初始富Cu相分离的大晶粒混合物可以通过在室温下依次沉积或共沉积金属前体Cu和（In，Ga）在存在Se超压的情况下将薄膜温度升高到适度退火温度（约450℃），并保持该温度和Se超压退火时间。在硒化，中等温度退火之前，也可以在约100℃下进行非硒化低温退火，以使基板上的前体均匀化。

6. 发明授权

US09147793B2 CdTe devices and method of manufacturing same 有权
标题翻译： CdTe器件及其制造方法
公开(公告)号：US09147793B2
公开(公告)日：2015-09-29
申请号：US14127261
申请日：2012-06-20
申请人： Timothy A. Gessert , Rommel Noufi , Ramesh G. Dhere , David S. Albin , Teresa Barnes , James Burst , Joel N. Duenow , Matthew Reese
发明人： Timothy A. Gessert , Rommel Noufi , Ramesh G. Dhere , David S. Albin , Teresa Barnes , James Burst , Joel N. Duenow , Matthew Reese
IPC分类号： H01L31/18 , H01L31/073
CPC分类号： H01L31/1828 , H01L21/0237 , H01L21/02474 , H01L21/02562 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/02595 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L21/02664 , H01L31/0296 , H01L31/073 , H01L31/1836 , Y02E10/543
摘要： A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided. In particular, a method of producing polycrystalline p-doped CdTe thin films for use in CdTe solar cells in which the CdTe thin films possess enhanced acceptor densities and minority carrier lifetimes, resulting in enhanced efficiency of the solar cells containing the CdTe material are provided.
摘要翻译：提供了一种生产多晶CdTe材料的方法和掺入多晶CdTe材料的器件。特别地，提供了一种用于CdTe太阳能电池中的多晶p掺杂CdTe薄膜的方法，其中CdTe薄膜具有增强的受主密度和少数载流子寿命，从而提高了含有CdTe材料的太阳能电池的效率。

7. 发明授权

US5731031A Production of films and powders for semiconductor device applications 失效
标题翻译：生产用于半导体器件应用的薄膜和粉末
公开(公告)号：US5731031A
公开(公告)日：1998-03-24
申请号：US575862
申请日：1995-12-20
申请人： Raghu Nath Bhattacharya , Rommel Noufi , Li Wang
发明人： Raghu Nath Bhattacharya , Rommel Noufi , Li Wang
IPC分类号： H01L31/032 , H01L31/18
CPC分类号： H01L31/0322 , H01L31/032 , Y02E10/541 , Y02P70/521 , Y10S438/93
摘要： A process for chemical bath deposition of selenide and sulfide salts as films and powders employable as precursors for the fabrication of solar cell devices. The films and powders include (1) Cu.sub.x Se.sub.n, wherein x=1-2 and n=1-3; (2) Cu.sub.x Ga.sub.y Se.sub.n, wherein x=1-2, y=0-1 and n=1-3; (3) Cu.sub.x In.sub.y Se.sub.n, wherein x=1-2.27, y=0.72-2 and n=1-3; (4) Cu.sub.x (InGa).sub.y Se.sub.n, wherein x=1-2.17, y=0.96-2 and n=1-3; (5) In.sub.y Se.sub.n, wherein y=1-2.3 and n=1-3; (6) Cu.sub.x S.sub.n, wherein x=1-2 and n=1-3; and (7) Cu.sub.x (InGa).sub.y (SeS).sub.n, wherein x=1-2, y=0.07-2 and n=0.663-3. A reaction vessel containing therein a substrate upon which will form one or more layers of semiconductor material is provided, and relevant solution mixtures are introduced in a sufficient quantity for a sufficient time and under favorable conditions into the vessel to react with each other to produce the resultant salt being prepared and deposited as one or more layers on the substrate and as a powder on the floor of the vessel. Hydrazine is present during all reaction processes producing non-gallium containing products and optionally present during reaction processes producing gallium-containing products to function as a strong reducing agent and thereby enhance reaction processes.
摘要翻译：用于化学浴沉积硒化物和硫化物盐的方法，作为可用作制造太阳能电池器件的前体的膜和粉末。膜和粉末包括（1）CuxSen，其中x = 1-2和n = 1-3; （2）CuxGaySen，其中x = 1-2，y = 0-1和n = 1-3; （3）CuxInySen，其中x = 1-2.27，y = 0.72-2和n = 1-3; （4）Cux（InGa）ySen，其中x = 1-2.17，y = 0.96-2和n = 1-3; （5）InySen，其中y = 1-2.3，n = 1-3; （6）CuxSn，其中x = 1-2且n = 1-3; 和（7）Cux（InGa）y（SeS）n，其中x = 1-2，y = 0.07-2和n = 0.663-3。提供其中含有将形成一层或多层半导体材料的基材的反应容器，并将相关的溶液混合物以足够的时间和在有利条件下引入容器中以相互反应以产生生成的盐被制备并沉积在基底上作为一层或多层并作为粉末沉积在容器的地板上。在所有反应过程中都存在肼，产生非含镓产物，并且任选地在反应过程中存在，产生含镓产物，起到强还原剂的作用，从而增强反应过程。

8. 发明申请

US20140134786A1 CdTe Devices and Method of Manufacturing Same 有权
标题翻译： CdTe器件及其制造方法相同
公开(公告)号：US20140134786A1
公开(公告)日：2014-05-15
申请号：US14127261
申请日：2012-06-20
申请人： Timothy A. Gessert , Rommel Noufi , Ramesh G. Dhere , David S. Albin , Teresa Barnes , James Burst , Joel N. Duenow , Matthew Reese
发明人： Timothy A. Gessert , Rommel Noufi , Ramesh G. Dhere , David S. Albin , Teresa Barnes , James Burst , Joel N. Duenow , Matthew Reese
IPC分类号： H01L31/18
CPC分类号： H01L31/1828 , H01L21/0237 , H01L21/02474 , H01L21/02562 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/02595 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L21/02664 , H01L31/0296 , H01L31/073 , H01L31/1836 , Y02E10/543
摘要： A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided. In particular, a method of producing polycrystalline p-doped CdTe thin films for use in CdTe solar cells in which the CdTe thin films possess enhanced acceptor densities and minority carrier lifetimes, resulting in enhanced efficiency of the solar cells containing the CdTe material are provided.
摘要翻译：提供了一种生产多晶CdTe材料的方法和掺入多晶CdTe材料的器件。特别地，提供了一种用于CdTe太阳能电池中的多晶p掺杂CdTe薄膜的方法，其中CdTe薄膜具有增强的受主密度和少数载流子寿命，从而提高了含有CdTe材料的太阳能电池的效率。

9. 发明授权

US07053294B2 Thin-film solar cell fabricated on a flexible metallic substrate 有权
标题翻译：在柔性金属基板上制造的薄膜太阳能电池
公开(公告)号：US07053294B2
公开(公告)日：2006-05-30
申请号：US10480880
申请日：2001-07-13
申请人： John R. Tuttle , Rommel Noufi , Falah S. Hasoon
发明人： John R. Tuttle , Rommel Noufi , Falah S. Hasoon
IPC分类号： H01L31/336 , H01L31/392
CPC分类号： H01L31/0322 , H01L31/03928 , Y02E10/541
摘要： A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).
摘要翻译：提供薄膜太阳能电池（10）。薄膜太阳能电池（10）包括具有第一表面和第二表面的柔性金属基底（12）。在柔性金属基板（12）的第一表面上沉积背金属接触层（16）。半导体吸收层（14）沉积在背面金属触点上。沉积在半导体吸收层（14）上的光敏膜形成异相结构和沉积在异质结结构上的栅极接触（24）。柔性金属基底（12）可由铝或不锈钢构成。此外，提供了构造太阳能电池的方法。该方法包括提供铝基板（12），在铝基板（12）上沉积半导体吸收层（14），并将铝基板（12）与半导体吸收层（14）绝缘，以抑制铝基板（12）和半导体吸收层（14）。

10. 发明授权

US5976614A Preparation of cuxinygazsen precursor films and powders by electroless deposition 有权
标题翻译：通过无电沉积制备铜镍铁合金前体膜和粉末
公开(公告)号：US5976614A
公开(公告)日：1999-11-02
申请号：US170840
申请日：1998-10-13
申请人： Raghu N. Bhattacharya , Wendi Kay Batchelor , Holm Wiesner , Kannan Ramanathan , Rommel Noufi
发明人： Raghu N. Bhattacharya , Wendi Kay Batchelor , Holm Wiesner , Kannan Ramanathan , Rommel Noufi
IPC分类号： C23C18/48 , C23C18/54 , B05D5/12
CPC分类号： C23C18/54 , C23C18/48
摘要： A method for electroless deposition of Cu.sub.x In.sub.y Ga.sub.z Se.sub.n (x=0-2, y=0-2, z=0-2, n=0-3) precursor films and powders onto a metallic substrate comprising:preparing an aqueous bath solution of compounds selected from the group consisting of:I) a copper compound, a selenium compound, an indium compound and gallium compound; II) a copper compound, a selenium compound and an indium compound; III) a selenium compound, and indium compound and a gallium compound; IV) a selenium compound and a indium compound; and V) a copper compound and selenium compound; each compound being present in sufficient quantity to react with each other to produce Cu.sub.x In.sub.y Ga.sub.z Se.sub.n (x=0-2, y=0-2, z=0-2, n=0-3);adjusting the pH of the aqueous bath solution to an acidic value by the addition of a dilute acid; andinitiating an electroless reaction with an oxidizing counterelectrode for a sufficient time to cause a deposit of Cu.sub.x In.sub.y Ga.sub.z Se.sub.n (x=0-2, y=0-2, z=0-2, n=0-3) from the aqueous bath solution onto a metallic substrate.
摘要翻译：一种用于将CuxInyGazSen（x = 0-2，y = 0-2，z = 0-2，n = 0-3）前体膜和粉末无电沉积到金属基底上的方法，包括：制备选择的化合物的水浴溶液由以下组成：I）铜化合物，硒化合物，铟化合物和镓化合物; II）铜化合物，硒化合物和铟化合物; III）硒化合物，铟化合物和镓化合物; IV）硒化合物和铟化合物; 和V）铜化合物和硒化合物; 每种化合物以足够的量存在以反应以产生CuxInyGazSen（x = 0-2，y = 0-2，z = 0-2，n = 0-3）; 通过加入稀酸将水浴溶液的pH调节至酸性值; 并用氧化反电极开始化学反应足够的时间以使CuxInyGazSen（x = 0-2，y = 0-2，z = 0-2，n = 0-3）从水浴溶液中沉积到金属基材。

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