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1. 发明授权

US5441897A Method of fabricating high-efficiency Cu(In,Ga)(SeS).sub.2 thin films for solar cells 失效
标题翻译：制造太阳能电池用高效Cu（In，Ga）（SeS）2薄膜的方法
公开(公告)号：US5441897A
公开(公告)日：1995-08-15
申请号：US197204
申请日：1994-02-16
申请人： Rommel Noufi , Andrew M. Gabor , John R. Tuttle , Andrew L. Tennant , Miguel A. Contreras , David S. Albin , Jeffrey J. Carapella
发明人： Rommel Noufi , Andrew M. Gabor , John R. Tuttle , Andrew L. Tennant , Miguel A. Contreras , David S. Albin , Jeffrey J. Carapella
IPC分类号： C01B19/00 , C01G3/00 , C23C14/34 , C23C30/00 , H01L21/20 , H01L21/203 , H01L21/205 , H01L21/263 , H01L21/363 , H01L31/0296 , H01L31/032 , H01L31/04 , H01L31/18
CPC分类号： H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S).sub.2 comprises depositing a first layer of (In,Ga).sub.x (Se,S).sub.y followed by depositing just enough Cu+(Se,S) or Cu.sub.x (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga).sub.x (Se,S).sub.y is deposited first, followed by deposition of all the Cu+(Se,S) or Cu.sub.x (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu.sub.x (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga).sub.x (Se,S).sub.y to go slightly Cu-poor in the final Cu(In,Ga)(Se,S).sub.2 thin film.
摘要翻译：制备Cu（In，Ga）（Se，S）2的略微不合Cu的薄膜的方法包括沉积（In，Ga）x（Se，S）y的第一层，然后沉积足够的Cu +（Se ，S）或Cux（Se，S），以产生所需的略微贫铜材料。在一个变化中，首先沉积（In，Ga）x（Se，S）y的大部分但不是全部（约90-99％），然后沉积所有Cu +（Se，S）或Cux Se，S）接近化学计量，可能甚至优选略微富含Cu，然后依次沉积（In，Ga）x（Se，S）y的余量（约1至10％）至以稍微不合铜的组成结束。在另一个变型中，首先将（In，Ga）x（Se，S）y的一小部分（约1至10％）沉积为种子层，随后沉积所有Cu +（Se，S）或Cux（Se，S）以制备非常富Cu的混合物，然后在（In，Ga）x（Se，S）y的剩余部分沉积后，在最终的Cu（In， Ga）（Se，S）2薄膜。

2. 发明授权

US5436204A Recrystallization method to selenization of thin-film Cu(In,Ga)Se.sub.2 for semiconductor device applications 失效
标题翻译：用于半导体器件应用的薄膜Cu（In，Ga）Se2的硒化的重结晶方法
公开(公告)号：US5436204A
公开(公告)日：1995-07-25
申请号：US293826
申请日：1994-08-22
申请人： David S. Albin , Jeffrey J. Carapella , John R. Tuttle , Miguel A. Contreras , Andrew M. Gabor , Rommel Noufi , Andrew L. Tennant
发明人： David S. Albin , Jeffrey J. Carapella , John R. Tuttle , Miguel A. Contreras , Andrew M. Gabor , Rommel Noufi , Andrew L. Tennant
IPC分类号： C01B19/00 , C01G3/00 , C23C14/34 , C23C30/00 , H01L21/20 , H01L21/203 , H01L21/205 , H01L21/263 , H01L21/363 , H01L31/0296 , H01L31/032 , H01L31/04 , H01L21/302
CPC分类号： H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： A process for fabricating slightly Cu-poor thin-films of Cu(In,Ga)Se.sub.2 on a substrate for semiconductor device applications includes the steps of forming initially a slightly Cu-rich, phase separated, mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se on the substrate in solid form followed by exposure of the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture to an overpressure of Se vapor and (In,Ga) vapor for deposition on the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture while simultaneously increasing the temperature of the solid mixture toward a recrystallization temperature (about 550.degree. C.) at which Cu(In,Ga)Se.sub.2 is solid and Cu.sub.x Se is liquid. The (In,Ga) flux is terminated while the Se overpressure flux and the recrystallization temperature are maintained to recrystallize the Cu.sub.x Se with the (In, Ga) that was deposited during the temperature transition and with the Se vapor to form the thin-film of slightly Cu-poor Cu.sub.x (In,Ga).sub.y Se.sub.z. The initial Cu-rich, phase separated large grain mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se can be made by sequentially depositing or co-depositing the metal precursors, Cu and (In, Ga), on the substrate at room temperature, ramping up the thin-film temperature in the presence of Se overpressure to a moderate anneal temperature (about 450.degree. C.) and holding that temperature and the Se overpressure for an annealing period. A nonselenizing, low temperature anneal at about 100.degree. C. can also be used to homogenize the precursors on the substrates before the selenizing, moderate temperature anneal.
摘要翻译：在用于半导体器件的衬底上制造Cu（In，Ga）Se2的略微不合铜的薄膜的工艺包括以下步骤：首先形成Cu（In，Ga）Se 2的稍微富Cu，相分离的混合物：在固体形式的衬底上，然后将Cu（In，Ga）Se 2：CuxSe固体混合物暴露于Se蒸气和（In，Ga）蒸气的过压，沉积在Cu（In，Ga）Se 2：CuxSe上固体混合物同时将固体混合物的温度升高至重结晶温度（约550℃），其中Cu（In，Ga）Se 2为固体，CuxSe为液体。（In，Ga）通量终止，同时保持Se超压通量和再结晶温度，以在温度转变期间沉积的（In，Ga）和Se蒸气重结晶CuxSe，形成薄膜轻微Cu-Cux（In，Ga）ySez。 Cu（In，Ga）Se2：CuxSe的初始富Cu相分离的大晶粒混合物可以通过在室温下依次沉积或共沉积金属前体Cu和（In，Ga）在存在Se超压的情况下将薄膜温度升高到适度退火温度（约450℃），并保持该温度和Se超压退火时间。在硒化，中等温度退火之前，也可以在约100℃下进行非硒化低温退火，以使基板上的前体均匀化。

3. 发明授权

US08772628B2 High performance, high bandgap, lattice-mismatched, GaInP solar cells 有权
标题翻译：高性能，高带隙，晶格不匹配的GaInP太阳能电池
公开(公告)号：US08772628B2
公开(公告)日：2014-07-08
申请号：US12992871
申请日：2009-01-29
申请人： Mark W. Wanlass , Jeffrey J. Carapella , Myles A. Steiner
发明人： Mark W. Wanlass , Jeffrey J. Carapella , Myles A. Steiner
IPC分类号： H01L31/00 , H01L21/00 , H01L31/0687
CPC分类号： H01L31/065 , H01L31/02168 , H01L31/022425 , H01L31/032 , H01L31/068 , H01L31/06875 , H01L31/0693 , H01L31/1844 , H01L31/1892 , Y02E10/544
摘要： High performance, high bandgap, lattice-mismatched, photovoltaic cells (10), both transparent and non-transparent to sub-bandgap light, are provided as devices for use alone or in combination with other cells in split spectrum apparatus or other applications.
摘要翻译：提供对子带隙光透明和不透明的高性能，高带隙，晶格不匹配的光伏电池（10）作为单独使用或与分光谱装置或其他应用中的其它单元组合使用的装置。

4. 发明申请

US20110277828A1 DISORDER-ORDER HOMOJUNCTIONS AS MINORITY-CARRIER BARRIERS 审中-公开
标题翻译：作为少数携带者障碍者的异常责任
公开(公告)号：US20110277828A1
公开(公告)日：2011-11-17
申请号：US13146643
申请日：2010-01-29
申请人： Mark W. Wanlass , Angelo Mascarenhas , Jeffrey J. Carapella
发明人： Mark W. Wanlass , Angelo Mascarenhas , Jeffrey J. Carapella
IPC分类号： H01L31/06 , H01L31/0352
CPC分类号： H01L31/0693 , H01L31/0304 , H01L31/0687 , H01L31/1844 , Y02E10/544
摘要： A method for improving the overall quantum efficiency and output voltage in solar cells using spontaneous ordered semiconductor alloy absorbers to form a DOH below the front or above the back surface of the cell.
摘要翻译：一种使用自发有序半导体合金吸收剂在太阳能电池中提高总体量子效率和输出电压以在电池背面前方或上方形成DOH的方法。

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