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    • 1. 发明申请
      US20120036487A1 FRACTURING CONTINUOUS PHOTOLITHOGRAPHY MASKS 有权
    • FRACTURING CONTINUOUS PHOTOLITHOGRAPHY MASKS
    • 断裂连续光刻胶片
    • US20120036487A1
    • 2012-02-09
    • US12849171
    • 2010-08-03
    • YING LIU , David Osmond Melville , Alan E. Rosenbluth , Kehan Tian
    • YING LIU , David Osmond Melville , Alan E. Rosenbluth , Kehan Tian
    • G06F17/50
    • G03F1/68 , G03F1/36
    • A method, system, and computer usable program product for fracturing a continuous mask usable in photolithography are provided in the illustrative embodiments. A first origin point is selected from a set of points on an edge in the continuous mask. A first end point is identified on the edge such that a separation metric between the first origin point and the first end point is at least equal to a threshold value. Several alternatives are determined for fracturing using the first origin point and the first end point. A cost associated with each of the several alternatives is computed and one of the alternatives is selected as a preferred fracturing. Several pairs of origin points and end points are formed from the set of points. Each pair has a cost of a preferred fracturing between the pair. The continuous mask is fractured using a subset of the several pairs.
    • 在说明性实施例中提供了用于压裂可用于光刻的连续掩模的方法，系统和计算机可用程序产品。 从连续掩码边缘上的一组点中选择第一个原点。 在边缘上识别第一终点，使得第一原点和第一终点之间的间隔度量至少等于阈值。 使用第一原点和第一终点确定用于压裂的几种替代方案。 计算与几种替代方案中的每一种相关联的成本，并且选择替代方案之一作为优选的压裂。 从该组点形成几对原点和终点。 每对都有一对优选的压裂成本。 连续掩模使用几对的子集进行断裂。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
    • 5. 发明授权
      US08234603B2 Method for fast estimation of lithographic binding patterns in an integrated circuit layout 有权
    • Method for fast estimation of lithographic binding patterns in an integrated circuit layout
    • 用于在集成电路布局中快速估计光刻结合图案的方法
    • US08234603B2
    • 2012-07-31
    • US12835891
    • 2010-07-14
    • Saeed Bagheri , David L. DeMaris , Maria Gabrani , David Osmond Melville , Alan E. Rosenbluth , Kehan Tian
    • Saeed Bagheri , David L. DeMaris , Maria Gabrani , David Osmond Melville , Alan E. Rosenbluth , Kehan Tian
    • G06F17/50
    • G03F1/70 , G06F17/5081
    • The present invention provides a lithographic difficulty metric that is a function of an energy ratio factor that includes a ratio of hard-to-print energy to easy-to-print energy of the diffraction orders along an angular coordinate θi of spatial frequency space, an energy entropy factor comprising energy entropy of said diffraction orders along said angular coordinate θi, a phase entropy factor comprising phase entropy of said diffraction orders along said angular coordinate θi, and a total energy entropy factor comprising total energy entropy of said diffraction orders. The hard-to-print energy includes energy of the diffraction orders at values of the normalized radial coordinates r of spatial frequency space in a neighborhood of r=0 and in a neighborhood of r=1, and the easy-to-print energy includes energy of the diffraction orders located at intermediate values of normalized radial coordinates r between the neighborhood of r=0 and the neighborhood of r=1. The value of the lithographic difficulty metric may be used to identify patterns in a design layout that are binding patterns in an optimization computation. The lithographic difficulty metric may be used to design integrated circuits that have good, relatively easy-to-print characteristics.
    • 本发明提供了一种光刻难度度量，其是能量比因子的函数，能量比因子包括沿着角坐标和空间频率空间的角度i的衍射级的难以打印能量的容易打印能量的比率 包括沿着所述角坐标和所述角度坐标的所述衍射级的能量熵的能量熵因子; i，包括所述衍射级沿着所述角坐标系的所述衍射级的相位熵的相位熵因子; i，以及包括总能量熵的总能量熵因子 说衍射订单。 难以打印的能量包括在r = 0和r = 1附近的空间频率空间的归一化径向坐标r的值的衍射级的能量，并且易于打印的能量包括 位于r = 0的邻域和r = 1附近的归一化的径向坐标r的中间值处的衍射级的能量。 光刻难度度量的值可用于识别在优化计算中的结合模式的设计布局中的图案。 光刻难度度可用于设计具有良好，相对易于打印的特性的集成电路。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
    • 7. 发明申请
      US20120017194A1 METHOD FOR FAST ESTIMATION OF LITHOGRAPHIC BINDING PATTERNS IN AN INTEGRATED CIRCUIT LAYOUT 有权
    • METHOD FOR FAST ESTIMATION OF LITHOGRAPHIC BINDING PATTERNS IN AN INTEGRATED CIRCUIT LAYOUT
    • 用于快速估计集成电路布局中的平面结合图案的方法
    • US20120017194A1
    • 2012-01-19
    • US12835891
    • 2010-07-14
    • Saeed Bagheri , David L. DeMaris , Maria Gabrani , David Osmond Melville , Alan E. Rosenbluth , Kehan Tian
    • Saeed Bagheri , David L. DeMaris , Maria Gabrani , David Osmond Melville , Alan E. Rosenbluth , Kehan Tian
    • G06F9/455 , G06F17/50
    • G03F1/70 , G06F17/5081
    • The present invention provides a lithographic difficulty metric that is a function of an energy ratio factor that includes a ratio of hard-to-print energy to easy-to-print energy of the diffraction orders along an angular coordinate θi spatial frequency space, an energy entropy factor comprising energy entropy of said diffraction orders along said angular coordinate θi, a phase entropy factor comprising phase entropy of said diffraction orders along said angular coordinate θi, and a total energy entropy factor comprising total energy entropy of said diffraction orders. The hard-to-print energy includes energy of the diffraction orders at values of the normalized radial coordinates r of spatial frequency space in a neighborhood of r=0 and in a neighborhood of r=1, and the easy-to-print energy includes energy of the diffraction orders located at intermediate values of normalized radial coordinates r between the neighborhood of r=0 and the neighborhood of r=1. The value of the lithographic difficulty metric may be used to identify patterns in a design layout that are binding patterns in an optimization computation. The lithographic difficulty metric may be used to design integrated circuits that have good, relatively easy-to-print characteristics.
    • 本发明提供了一种光刻难度度量，其是能量比因子的函数，能量比因子包括沿着角坐标系的衍射级的难以打印能量与易于打印能量的比率; i空间频率空间， 包括沿着所述角坐标和所述衍射级的能量熵的能量熵因子; i，包括所述衍射级沿着所述角坐标和所述角度的所述衍射级的相位熵的相位熵因子; i，以及包括所述总体能量熵的总能量熵因子 衍射指令。 难以打印的能量包括在r = 0和r = 1附近的空间频率空间的归一化径向坐标r的值的衍射级的能量，并且易于打印的能量包括 位于r = 0的邻域和r = 1附近的归一化的径向坐标r的中间值处的衍射级的能量。 光刻难度度量的值可用于识别在优化计算中的结合模式的设计布局中的图案。 光刻难度度可用于设计具有良好的，相对易于打印的特性的集成电路。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
    • 8. 发明授权
      US08495528B2 Method for generating a plurality of optimized wavefronts for a multiple exposure lithographic process 失效
    • Method for generating a plurality of optimized wavefronts for a multiple exposure lithographic process
    • 用于产生用于多次曝光光刻工艺的多个优化波前的方法
    • US08495528B2
    • 2013-07-23
    • US12890854
    • 2010-09-27
    • Saeed Bagheri , Kafai Lai , David O. Melville , Alan E. Rosenbluth , Kehan Tian , Jaione Tirapu Azpiroz
    • Saeed Bagheri , Kafai Lai , David O. Melville , Alan E. Rosenbluth , Kehan Tian , Jaione Tirapu Azpiroz
    • G06F17/50
    • G03F7/70466 , G03F1/70
    • A simplified version of a multiexpose mask optimization problem is solved in order to find a compressed space in which to search for the solution to the full problem formulation. The simplification is to reduce the full problem to an unconstrained formulation. The full problem of minimizing dark region intensity while maintaining intensity above threshold at each bright point can be converted to the unconstrained problem of minimizing average dark region intensity per unit of average intensity in the bright regions. The extrema solutions to the simplified problem can be obtained for each source. This set of extrema solutions is then assessed to determine which features are predominantly printed by which source. A minimal set of extrema solutions serves as a space of reduced dimensionality within which to maximize the primary objective under constraints. The space typically has reduced dimensionality through selection of highest quality extrema solutions.
    • 解决了一个简化版本的多功能面罩优化问题，以便找到一个压缩空间，在该空间中搜索解决问题的全部问题。 简化是将完整的问题减少到无约束的公式。 将每个亮点处的强度保持在阈值以上的暗区强度最小化的问题可以转化为明亮区域每单位平均强度平均暗区强度最小化的无约束问题。 可以为每个源获得简化问题的极值解。 然后评估这组极值解决方案，以确定哪些特征主要由哪个来源打印。 最小的一组极值解决方案作为减小维数的空间，在这个空间内可以在约束条件下最大化主要目标。 该空间通常通过选择最高质量的极值解决方案降低维度。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
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