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1. 发明授权

US08880382B2 Analyzing a patterning process using a model of yield 有权
公开(公告)号：US08880382B2
公开(公告)日：2014-11-04
申请号：US13352713
申请日：2012-01-18
申请人： Saeed Bagheri , Fook-Luen Heng , Rajiv Vasant Joshi , Kafai Lai , David Osmond Melville , Saibal Mukhopadhyay , Alan E Rosenbluth , Rama N. Singh , Kehan Tian
发明人： Saeed Bagheri , Fook-Luen Heng , Rajiv Vasant Joshi , Kafai Lai , David Osmond Melville , Saibal Mukhopadhyay , Alan E Rosenbluth , Rama N. Singh , Kehan Tian
IPC分类号： G06G7/48
CPC分类号： G06F17/5009 , G03F1/36 , G03F1/70 , G06F2217/10
摘要： Techniques are presented that include accessing results of forward simulations of circuit yield, the results including at least circuit yield results including simulated device shapes. Using the circuit yield results, high-level traits of at least the simulated device shapes are determined. Based on the determined high-level traits and using the circuit yield results, a compact model for predicted yield is constructed, the compact model including a plurality of adjustable parameters, and the constructing the compact model for predicted yield including adjusting the adjustable parameters until at least one first predetermined criterion is met. An optimization problem is constructed including at least the compact model for yield, an objective, and a plurality of constraints. Using the optimization problem, the objective is modified subject to the plurality of constraints until at least one second predetermined criterion is met.

2. 发明授权

US08682634B2 Analyzing a patterning process using a model of yield 失效
标题翻译：使用产量模型分析图案化过程
公开(公告)号：US08682634B2
公开(公告)日：2014-03-25
申请号：US13613061
申请日：2012-09-13
申请人： Saeed Bagheri , Fook-Luen Heng , Rajiv Vasant Joshi , Kafai Lai , David Osmond Melville , Saibal Mukhopadhyay , Alan E Rosenbluth , Rama N. Singh , Kehan Tian
发明人： Saeed Bagheri , Fook-Luen Heng , Rajiv Vasant Joshi , Kafai Lai , David Osmond Melville , Saibal Mukhopadhyay , Alan E Rosenbluth , Rama N. Singh , Kehan Tian
IPC分类号： G06F17/50 , G06G7/62
CPC分类号： G06F17/5009 , G03F1/36 , G03F1/70 , G06F2217/10
摘要： Techniques are presented that include accessing results of forward simulations of circuit yield, the results including at least circuit yield results including simulated device shapes. Using the circuit yield results, high-level traits of at least the simulated device shapes are determined. Based on the determined high-level traits and using the circuit yield results, a compact model for predicted yield is constructed, the compact model including a plurality of adjustable parameters, and the constructing the compact model for predicted yield including adjusting the adjustable parameters until at least one first predetermined criterion is met. An optimization problem is constructed including at least the compact model for yield, an objective, and a plurality of constraints. Using the optimization problem, the objective is modified subject to the plurality of constraints until at least one second predetermined criterion is met.
摘要翻译：提出了包括访问电路产量正向模拟的结果的技术，结果至少包括电路产量结果，包括模拟设备形状。使用电路产量结果，确定至少模拟装置形状的高级特征。基于确定的高水平特征和使用电路产量结果，构建了一种预测产量的紧凑模型，该紧凑模型包括多个可调参数，并构建了用于预测产量的紧凑模型，包括调整可调参数直到满足至少一个第一预定标准。构建最优化问题，其至少包括用于产量，目标和多个约束的紧凑模型。使用优化问题，根据多个约束修改目标，直到满足至少一个第二预定标准。

3. 发明申请

US20130185046A1 Analyzing A Patterning Process Using A Model Of Yield 失效
标题翻译：使用产量模型分析模式化过程
公开(公告)号：US20130185046A1
公开(公告)日：2013-07-18
申请号：US13613061
申请日：2012-09-13
申请人： Saeed Bagheri , Fook-Luen Heng , Rajiv Vasant Joshi , Kafai Lai , David Osmond Melville , Saibal Mukhopadhyay , Alan E. Rosenbluth , Rama N. Singh , Kehan Tian
发明人： Saeed Bagheri , Fook-Luen Heng , Rajiv Vasant Joshi , Kafai Lai , David Osmond Melville , Saibal Mukhopadhyay , Alan E. Rosenbluth , Rama N. Singh , Kehan Tian
IPC分类号： G06F17/50
CPC分类号： G06F17/5009 , G03F1/36 , G03F1/70 , G06F2217/10
摘要： Techniques are presented that include accessing results of forward simulations of circuit yield, the results including at least circuit yield results including simulated device shapes. Using the circuit yield results, high-level traits of at least the simulated device shapes are determined. Based on the determined high-level traits and using the circuit yield results, a compact model for predicted yield is constructed, the compact model including a plurality of adjustable parameters, and the constructing the compact model for predicted yield including adjusting the adjustable parameters until at least one first predetermined criterion is met. An optimization problem is constructed including at least the compact model for yield, an objective, and a plurality of constraints. Using the optimization problem, the objective is modified subject to the plurality of constraints until at least one second predetermined criterion is met.
摘要翻译：提出了包括访问电路产量正向模拟的结果的技术，结果至少包括电路产量结果，包括模拟设备形状。使用电路产量结果，确定至少模拟装置形状的高级特征。基于确定的高水平特征和使用电路产量结果，构建了一种预测产量的紧凑模型，该紧凑模型包括多个可调参数，并构建了用于预测产量的紧凑模型，包括调整可调参数直到满足至少一个第一预定标准。构建最优化问题，其至少包括用于产量，目标和多个约束的紧凑模型。使用优化问题，根据多个约束修改目标，直到满足至少一个第二预定标准。

4. 发明授权

US08495528B2 Method for generating a plurality of optimized wavefronts for a multiple exposure lithographic process 失效
标题翻译：用于产生用于多次曝光光刻工艺的多个优化波前的方法
公开(公告)号：US08495528B2
公开(公告)日：2013-07-23
申请号：US12890854
申请日：2010-09-27
申请人： Saeed Bagheri , Kafai Lai , David O. Melville , Alan E. Rosenbluth , Kehan Tian , Jaione Tirapu Azpiroz
发明人： Saeed Bagheri , Kafai Lai , David O. Melville , Alan E. Rosenbluth , Kehan Tian , Jaione Tirapu Azpiroz
IPC分类号： G06F17/50
CPC分类号： G03F7/70466 , G03F1/70
摘要： A simplified version of a multiexpose mask optimization problem is solved in order to find a compressed space in which to search for the solution to the full problem formulation. The simplification is to reduce the full problem to an unconstrained formulation. The full problem of minimizing dark region intensity while maintaining intensity above threshold at each bright point can be converted to the unconstrained problem of minimizing average dark region intensity per unit of average intensity in the bright regions. The extrema solutions to the simplified problem can be obtained for each source. This set of extrema solutions is then assessed to determine which features are predominantly printed by which source. A minimal set of extrema solutions serves as a space of reduced dimensionality within which to maximize the primary objective under constraints. The space typically has reduced dimensionality through selection of highest quality extrema solutions.
摘要翻译：解决了一个简化版本的多功能面罩优化问题，以便找到一个压缩空间，在该空间中搜索解决问题的全部问题。简化是将完整的问题减少到无约束的公式。将每个亮点处的强度保持在阈值以上的暗区强度最小化的问题可以转化为明亮区域每单位平均强度平均暗区强度最小化的无约束问题。可以为每个源获得简化问题的极值解。然后评估这组极值解决方案，以确定哪些特征主要由哪个来源打印。最小的一组极值解决方案作为减小维数的空间，在这个空间内可以在约束条件下最大化主要目标。该空间通常通过选择最高质量的极值解决方案降低维度。

5. 发明授权

US08351037B2 Method to match exposure tools using a programmable illuminator 失效
标题翻译：使用可编程照明器匹配曝光工具的方法
公开(公告)号：US08351037B2
公开(公告)日：2013-01-08
申请号：US12834379
申请日：2010-07-12
申请人： Jaione Tirapu Azpiroz , Saeed Bagheri , Kafai Lai , David O. Melville , Alan E. Rosenbluth , Kehan Tian
发明人： Jaione Tirapu Azpiroz , Saeed Bagheri , Kafai Lai , David O. Melville , Alan E. Rosenbluth , Kehan Tian
IPC分类号： G01B11/00
CPC分类号： G03F1/36 , G03F7/70116 , G03F7/70125 , G03F7/70525
摘要： Programmable illuminators in exposure tools are employed to increase the degree of freedom in tool matching. A tool matching methodology is provided that utilizes the fine adjustment of the individual source pixel intensity based on a linear programming (LP) problem subjected to user-specific constraints to minimize the difference of the lithographic wafer data between two tools. The lithographic data can be critical dimension differences from multiple targets and multiple process conditions. This LP problem can be modified to include a binary variable for matching sources using multi-scan exposure. The method can be applied to scenarios that the reference tool is a physical tool or a virtual ideal tool. In addition, this method can match different lithography systems, each including a tool and a mask.
摘要翻译：使用曝光工具中的可编程照明器来增加刀具匹配的自由度。提供了一种工具匹配方法，其利用基于用户特定约束的线性规划（LP）问题对各个源像素强度的精细调整，以最小化两种工具之间的平版印刷晶片数据的差异。光刻数据可以是来自多个目标和多个工艺条件的关键尺寸差异。该LP问题可以修改为包括使用多次扫描曝光来匹配源的二进制变量。该方法可以应用于参考工具是物理工具或虚拟理想工具的场景。此外，该方法可以匹配不同的光刻系统，每个包括工具和掩模。

6. 发明申请

US20120077130A1 METHOD FOR GENERATING A PLURALITY OF OPTIMIZED WAVEFRONTS FOR A MULTIPLE EXPOSURE LITHOGRAPHIC PROCESS 失效
标题翻译：一种用于多次曝光的光刻过程产生多重优化波形的方法
公开(公告)号：US20120077130A1
公开(公告)日：2012-03-29
申请号：US12890854
申请日：2010-09-27
申请人： Saeed Bagheri , Kafai Lai , David O. Melville , Alan E. Rosenbluth , Kehan Tian , Jaione Tirapu Azpiroz
发明人： Saeed Bagheri , Kafai Lai , David O. Melville , Alan E. Rosenbluth , Kehan Tian , Jaione Tirapu Azpiroz
IPC分类号： G03F7/20 , G06F17/50
CPC分类号： G03F7/70466 , G03F1/70
摘要： A simplified version of a multiexpose mask optimization problem is solved in order to find a compressed space in which to search for the solution to the full problem formulation. The simplification is to reduce the full problem to an unconstrained formulation. The full problem of minimizing dark region intensity while maintaining intensity above threshold at each bright point can be converted to the unconstrained problem of minimizing average dark region intensity per unit of average intensity in the bright regions. The extrema solutions to the simplified problem can be obtained for each source. This set of extrema solutions is then assessed to determine which features are predominantly printed by which source. A minimal set of extrema solutions serves as a space of reduced dimensionality within which to maximize the primary objective under constraints. The space typically has reduced dimensionality through selection of highest quality extrema solutions.
摘要翻译：解决了一个简化版本的多功能面罩优化问题，以便找到一个压缩空间，在该空间中搜索解决问题的全部问题。简化是将完整的问题减少到无约束的公式。将每个亮点处的强度保持在阈值以上的暗区强度最小化的问题可以转化为明亮区域每单位平均强度平均暗区强度最小化的无约束问题。可以为每个源获得简化问题的极值解。然后评估这组极值解决方案，以确定哪些特征主要由哪个来源打印。最小的一组极值解决方案作为减小维数的空间，在这个空间内可以在约束条件下最大化主要目标。该空间通常通过选择最高质量的极值解决方案降低维度。

7. 发明授权

US08605254B2 Constrained optimization of lithographic source intensities under contingent requirements 失效
标题翻译：偶然要求下光刻源强度的约束优化
公开(公告)号：US08605254B2
公开(公告)日：2013-12-10
申请号：US12605732
申请日：2009-10-26
申请人： Saeed Bagheri , Kafai Lai , David O. S. Melville , Alan E. Rosenbluth , Kehan Tian
发明人： Saeed Bagheri , Kafai Lai , David O. S. Melville , Alan E. Rosenbluth , Kehan Tian
IPC分类号： G03B27/54
CPC分类号： G03B27/54 , G03F7/70083 , G03F7/705
摘要： A method for illuminating a mask to project a desired image pattern into a photoactive material is described. The method includes receiving an image pattern. Determining a relationship between source pixels in a set of source pixels to desired intensities at one or more points in the image pattern is performed. Linear constraints are imposed on a set of intensity values based on one or more contingent intensity condition. The contingent intensity conditions include integer variables specifying contingent constraints. The method includes determining values of the set of intensity values in accordance with the linear constraints, using a constrained optimization algorithm. The set of intensity values represents intensities of a set of source pixels. The set of intensity values are output. Apparatus and computer readable storage media are also described.
摘要翻译：描述了用于照射掩模以将期望的图像图案投影到光活性材料中的方法。该方法包括接收图像图案。确定一组源像素中的源像素与图像图案中的一个或多个点处的期望强度之间的关系。基于一个或多个偶然强度条件对一组强度值施加线性约束。偶然强度条件包括规定偶然约束的整数变量。该方法包括使用约束优化算法根据线性约束来确定强度值集合的值。强度值集合表示一组源像素的强度。输出强度值集合。还描述了装置和计算机可读存储介质。

8. 发明申请

US20110096313A1 Constrained Optimization Of Lithographic Source Intensities Under Contingent Requirements 失效
标题翻译：有限要求的光刻源强度的约束优化
公开(公告)号：US20110096313A1
公开(公告)日：2011-04-28
申请号：US12605732
申请日：2009-10-26
申请人： Saeed Bagheri , Kafai Lai , David O.S. Melville , Alan E. Rosenbluth , Kehan Tian
发明人： Saeed Bagheri , Kafai Lai , David O.S. Melville , Alan E. Rosenbluth , Kehan Tian
IPC分类号： G03B27/54
CPC分类号： G03B27/54 , G03F7/70083 , G03F7/705
摘要： A method for illuminating a mask to project a desired image pattern into a photoactive material is described. The method includes receiving an image pattern. Determining a relationship between source pixels in a set of source pixels to desired intensities at one or more points in the image pattern is performed. Linear constraints are imposed on a set of intensity values based on one or more contingent intensity condition. The contingent intensity conditions include integer variables specifying contingent constraints. The method includes determining values of the set of intensity values in accordance with the linear constraints, using a constrained optimization algorithm. The set of intensity values represents intensities of a set of source pixels. The set of intensity values are output. Apparatus and computer readable storage media are also described.
摘要翻译：描述了用于照射掩模以将期望的图像图案投影到光活性材料中的方法。该方法包括接收图像图案。确定一组源像素中的源像素与图像图案中的一个或多个点处的期望强度之间的关系。基于一个或多个偶然强度条件对一组强度值施加线性约束。偶然强度条件包括规定偶然约束的整数变量。该方法包括使用约束优化算法根据线性约束来确定强度值集合的值。强度值集合表示一组源像素的强度。输出强度值集合。还描述了装置和计算机可读存储介质。

9. 发明授权

US08372565B2 Method for optimizing source and mask to control line width roughness and image log slope 有权
标题翻译：优化源和掩码以控制线宽粗糙度和图像对数斜率的方法
公开(公告)号：US08372565B2
公开(公告)日：2013-02-12
申请号：US12872312
申请日：2010-08-31
申请人： Kehan Tian , Alan E. Rosenbluth , David O. Melville , Jaione Tirapu Azpiroz , Saeed Bagheri , Kafai Lai
发明人： Kehan Tian , Alan E. Rosenbluth , David O. Melville , Jaione Tirapu Azpiroz , Saeed Bagheri , Kafai Lai
IPC分类号： G03F9/00
CPC分类号： G03F1/70 , G03F7/70433
摘要： A method for illuminating a mask with a source to project a desired image pattern through a lithographic system onto a photoactive material including: defining a representation of the mask; obtaining a fractional resist shot noise (FRSN) parameter; determining a first relationship between a first set of optical intensity values and an edge roughness metric based on the FRSN parameter; determining a second relationship between a second set of optical intensity values and a lithographic performance metric; imposing a set of metric constraints based on one of the first and second relationships; setting up an objective function of optimization based on the remaining of the two relationships; determining optimum constrained values of the representation of the mask based on the set of metric constraints and the objective function; and outputting these values.
摘要翻译：一种用源照射掩模的方法，用于通过光刻系统将期望的图像图案投影到光活性材料上，包括：限定掩模的表示; 获得分数抗蚀散射噪声（FRSN）参数; 基于所述FRSN参数确定第一组光强度值与边缘粗糙度度量之间的第一关系; 确定第二组光强度值和光刻性能度量之间的第二关系; 基于所述第一和第二关系之一施加一组度量约束; 基于剩余的两个关系建立优化的目标函数; 基于所述度量约束和所述目标函数的集合来确定所述掩码的表示的最佳约束值; 并输出这些值。

10. 发明申请

US20120052418A1 METHOD FOR OPTIMIZING SOURCE AND MASK TO CONTROL LINE WIDTH ROUGHNESS AND IMAGE LOG SLOPE 有权
标题翻译：用于优化源和掩码以控制线宽度粗糙度和图像日志斜率的方法
公开(公告)号：US20120052418A1
公开(公告)日：2012-03-01
申请号：US12872312
申请日：2010-08-31
申请人： Kehan Tian , Alan E. Rosenbluth , David O. Melville , Jaione Tirapu Azpiroz , Saeed Bagheri , Kafai Lai
发明人： Kehan Tian , Alan E. Rosenbluth , David O. Melville , Jaione Tirapu Azpiroz , Saeed Bagheri , Kafai Lai
IPC分类号： G03F1/00 , G06F17/50 , G03F7/20
CPC分类号： G03F1/70 , G03F7/70433
摘要： A method for illuminating a mask with a source to project a desired image pattern through a lithographic system onto a photoactive material including: defining a representation of the mask; obtaining a fractional resist shot noise (FRSN) parameter; determining a first relationship between a first set of optical intensity values and an edge roughness metric based on the FRSN parameter; determining a second relationship between a second set of optical intensity values and a lithographic performance metric; imposing a set of metric constraints based on one of the first and second relationships; setting up an objective function of optimization based on the remaining of the two relationships; determining optimum constrained values of the representation of the mask based on the set of metric constraints and the objective function; and outputting these values.
摘要翻译：一种用源照射掩模的方法，用于通过光刻系统将期望的图像图案投影到光活性材料上，包括：限定掩模的表示; 获得分数抗蚀散射噪声（FRSN）参数; 基于所述FRSN参数确定第一组光强度值与边缘粗糙度度量之间的第一关系; 确定第二组光强度值和光刻性能度量之间的第二关系; 基于所述第一和第二关系之一施加一组度量约束; 基于剩余的两个关系建立优化的目标函数; 基于所述度量约束和所述目标函数的集合来确定所述掩码的表示的最佳约束值; 并输出这些值。

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