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1. 发明授权

US06627390B2 Masking frame plating method for forming masking frame plated layer 失效
标题翻译：用于形成掩蔽框架镀层的掩模框架电镀方法
公开(公告)号：US06627390B2
公开(公告)日：2003-09-30
申请号：US09893225
申请日：2001-06-28
申请人： Xue Hua Wu , Yi-Chun Liu , Yining Hu , Jei-Wei Chang , Kochan Ju
发明人： Xue Hua Wu , Yi-Chun Liu , Yining Hu , Jei-Wei Chang , Kochan Ju
IPC分类号： G03C500
CPC分类号： G11B5/3163 , G11B5/3116 , G11B5/3967 , Y10T29/49032
摘要： A method for forming a plated layer. There is first provided a substrate. There is then formed over the substrate a masking frame employed for masking frame plating a masking frame plated layer within the masking frame, where the masking frame is fabricated to provide an overhang of an upper portion of the masking frame spaced further from the substrate with respect to a lower portion of the masking frame spaced closer to the substrate. Finally, there is then plated the masking frame plated layer within the masking frame. The method is useful for forming masking frame plated magnetic pole tip stack layers with enhanced planarity dimensional control within magnetic transducer elements.
摘要翻译：一种形成镀层的方法。首先提供基板。然后在衬底上形成掩蔽框架，用于掩蔽在屏蔽框架内对屏蔽框架镀层进行屏蔽电镀，其中制造掩模框架以提供与衬底间隔开的掩蔽框架的上部的突出部分，到掩蔽框架的较靠近衬底间隔的部分。最后，然后将屏蔽框架镀层电镀在屏蔽框架内。该方法对于在磁换能器元件内形成具有增强的平面度尺寸控制的掩模框架电镀磁极尖端堆叠层是有用的。

2. 发明授权

US06291138B1 Masking frame plating method for forming masking frame plated layer 失效
标题翻译：用于形成掩蔽框架镀层的掩模框架电镀方法
公开(公告)号：US06291138B1
公开(公告)日：2001-09-18
申请号：US09360121
申请日：1999-07-23
申请人： Xuehua Wu , Yi-Chun Liu , Yining Hu , Jei-Wei Chang , Kochan Ju
发明人： Xuehua Wu , Yi-Chun Liu , Yining Hu , Jei-Wei Chang , Kochan Ju
IPC分类号： G03C500
CPC分类号： G11B5/3163 , G11B5/3116 , G11B5/3967 , Y10T29/49032
摘要： A method for forming a plated layer. There is first provided a substrate. There is then formed over the substrate a masking frame employed for masking frame plating a masking frame plated layer within the masking frame, where the masking frame is fabricated to provide an overhang of an upper portion of the masking frame spaced further from the substrate with respect to a lower portion of the masking frame spaced closer to the substrate. Finally, there is then plated the masking frame plated layer within the masking frame. The method is useful for forming masking frame plated magnetic pole tip stack layers with enhanced planarity dimensional control within magnetic transducer elements.
摘要翻译：一种形成镀层的方法。首先提供基板。然后在衬底上形成掩蔽框架，用于掩蔽在屏蔽框架内对屏蔽框架镀层进行屏蔽电镀，其中制造掩模框架以提供与衬底间隔开的掩蔽框架的上部的突出部分，到掩蔽框架的较靠近衬底间隔的部分。最后，然后将屏蔽框架镀层电镀在屏蔽框架内。该方法对于在磁换能器元件内形成具有增强的平面度尺寸控制的掩模框架电镀磁极尖端堆叠层是有用的。

3. 发明授权

US06767477B2 Etching process to selectively remove copper plating seed layer 有权
标题翻译：蚀刻工艺选择性去除镀铜种子层
公开(公告)号：US06767477B2
公开(公告)日：2004-07-27
申请号：US10170106
申请日：2002-06-12
申请人： Xue Hua Wu , Wensen Li , Si-Tuan Lam , Henry C. Chang , Kochan Ju , Jei-Wei Chang
发明人： Xue Hua Wu , Wensen Li , Si-Tuan Lam , Henry C. Chang , Kochan Ju , Jei-Wei Chang
IPC分类号： C23F100
CPC分类号： F16B7/025 , C23F1/18 , G11B5/17 , G11B5/313 , G11B5/3163 , H05K1/056 , H05K3/067 , Y10T403/7069
摘要： Write head coils for magnetic disk systems are commonly formed through electroplating onto a seed layer in the presence of a photoresist mask. It is then necessary to remove the seed layer everywhere except under the coil itself. The present invention achieves this through etching in a solution of ammonium persulfate to which has been added the complexing agent 1,4,8,11 tetraazundecane. This suppresses the reduction of Cu++ to Cu, thereby increasing the dissolution rate of copper while decreasing that of nickel-iron. Two ways of implementing this are described—adding the complexing agent directly to the ammonium persulfate and introducing the 1,4,8,11 tetraazundecane through a dipping process that precedes conventional etching in the ammonium persulfate.
摘要翻译：用于磁盘系统的写头线圈通常在光刻胶掩模的存在下通过电镀到种子层上形成。因此，除了线圈本身以外，还需要除去种子层。本发明通过在已加入络合剂1,4,8,11四氮十烷的过硫酸铵溶液中进行蚀刻来实现。这抑制了Cu向Cu的还原，从而提高了铜的溶解速率，同时降低了镍铁的溶解速率。描述了实现这一点的两种方法 - 将络合剂直接加入到过硫酸铵中，并通过在过硫酸铵中常规蚀刻之前的浸渍方法引入1,4,8,11四氮杂十一烷。

4. 发明授权

US06387599B2 Corrosion inhibitor of NiCu for high performance writers 失效
标题翻译： NiCu防腐剂用于高性能作者
公开(公告)号：US06387599B2
公开(公告)日：2002-05-14
申请号：US09756013
申请日：2001-01-08
申请人： Xuehua Wu , Yi-Chun Liu , Jei-Wei Chang , Kochan Ju
发明人： Xuehua Wu , Yi-Chun Liu , Jei-Wei Chang , Kochan Ju
IPC分类号： G03F730
CPC分类号： G03F7/322 , C23F1/02 , G11B5/3163 , H05K3/064
摘要： The problem of copper corrosion that occurs in the presence of strong alkaline developing solutions during photo rework has been overcome by protecting all exposed copper bearing surfaces from attack. Two ways of achieving this are described. In the first method, benzotriazole (BTA) is added to the developing solution which is then used in the normal way, developing time being unaffected by this modification. In the second method, the surface that is to receive the photoresist is first given a dip in a solution of BTA, following which the photoresist is immediately applied and processing, including development, proceeds as normal. For both methods the result is the elimination of all copper corrosion during development.
摘要翻译：通过保护所有暴露的铜轴承表面免受攻击，已经克服了在照相返修期间存在强碱性显影液存在的铜腐蚀问题。描述实现这一点的两种方式。在第一种方法中，将苯并三唑（BTA）加入显影液中，然后以正常方式使用，显影时间不受该改性的影响。在第二种方法中，首先将待接收光致抗蚀剂的表面浸入BTA的溶液中，随后立即施加光致抗蚀剂，并且包括显影在内的处理正常进行。对于这两种方法，结果是在开发过程中消除了所有的铜腐蚀。

5. 发明授权

US06395458B2 Corrosion inhibitor of NiCu for high performance writers 失效
标题翻译： NiCu防腐剂用于高性能作者
公开(公告)号：US06395458B2
公开(公告)日：2002-05-28
申请号：US09756015
申请日：2001-01-08
申请人： Xuehua Wu , Yi-Chun Liu , Jei-Wei Chang , Kochan Ju
发明人： Xuehua Wu , Yi-Chun Liu , Jei-Wei Chang , Kochan Ju
IPC分类号： G03F732
CPC分类号： G03F7/322 , C23F1/02 , G11B5/3163 , H05K3/064
摘要： The problem of copper corrosion that occurs in the presence of strong alkaline developing solutions during photo rework has been overcome by protecting all exposed copper bearing surfaces from attack. Two ways of achieving this are described. In the first method, benzotriazole (BTA) is added to the developing solution which is then used in the normal way, developing time being unaffected by this modification. In the second method, the surface that is to receive the photoresist is first given a dip in a solution of BTA, following which the photoresist is immediately applied and processing, including proceeds as normal. For both methods the result is the elimination of all copper corrosion during development.
摘要翻译：通过保护所有暴露的铜轴承表面免受攻击，已经克服了在照相返修期间存在强碱性显影液存在的铜腐蚀问题。描述实现这一点的两种方式。在第一种方法中，将苯并三唑（BTA）加入显影液中，然后以正常方式使用，显影时间不受该改性的影响。在第二种方法中，首先将待接收光致抗蚀剂的表面浸入BTA溶液中，随后立即施加光刻胶并进行处理，包括正常进行。对于这两种方法，结果是在开发过程中消除了所有的铜腐蚀。

6. 发明授权

US06207350B1 Corrosion inhibitor for NiCu for high performance writers 失效
标题翻译： NiCu用于高性能作者的防腐蚀剂
公开(公告)号：US06207350B1
公开(公告)日：2001-03-27
申请号：US09483931
申请日：2000-01-18
申请人： Xuehua Wu , Yi-Chun Liu , Jei-Wei Chang , Kochan Ju
发明人： Xuehua Wu , Yi-Chun Liu , Jei-Wei Chang , Kochan Ju
IPC分类号： G03F732
CPC分类号： G03F7/322 , C23F1/02 , G11B5/3163 , H05K3/064
摘要： The problem of copper corrosion that occurs in the presence of strong alkaline developing solutions during photo rework has been overcome by protecting all exposed copper bearing surfaces from attack. Two ways of achieving this are described. In the first method, benzotriazole (BTA) is added to the developing solution which is then used in the normal way, developing time being unaffected by this modification. In the second method, the surface that is to receive the photoresist is first given a dip in a solution of BTA, following which the photoresist is immediately applied and processing, including development, proceeds as normal. For both methods the result is the elimination of all copper corrosion during development.
摘要翻译：通过保护所有暴露的铜轴承表面免受攻击，已经克服了在照相返修期间存在强碱性显影液存在的铜腐蚀问题。描述实现这一点的两种方式。在第一种方法中，将苯并三唑（BTA）加入显影液中，然后以正常方式使用，显影时间不受该改性的影响。在第二种方法中，首先将待接收光致抗蚀剂的表面浸入BTA的溶液中，随后立即施加光致抗蚀剂，并且包括显影在内的处理正常进行。对于这两种方法，结果是在开发过程中消除了所有的铜腐蚀。

7. 发明申请

US20070041124A1 Narrow track CPP head with bias cancellation 有权
标题翻译：窄轨CPP头偏置消除
公开(公告)号：US20070041124A1
公开(公告)日：2007-02-22
申请号：US11588564
申请日：2006-10-27
申请人： Jei-Wei Chang , Koichi Terunuma , Youfeng Zheng , Kochan Ju
发明人： Jei-Wei Chang , Koichi Terunuma , Youfeng Zheng , Kochan Ju
IPC分类号： G11B5/09
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49021 , Y10T29/49032 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： The problem of increased edge sensitivity associated with the reduction of the spacing between bias magnets in a CPP head has been solved by limiting the width of the bias cancellation layer and by adding an extra layer of insulation to ensure that current through the device flows only through its central area, thereby minimizing its edge reading sensitivity.
摘要翻译：通过限制偏置消除层的宽度并添加额外的绝缘层来解决与CPP头中的偏置磁体之间的间隔减小相关联的增加的边缘灵敏度的问题，以确保通过器件的电流仅流过其中心区域，从而最小化其边缘读取灵敏度。

8. 发明授权

US07118680B2 Self-alignment scheme for enhancement of CPP-GMR 失效
标题翻译：用于增强CPP-GMR的自对准方案
公开(公告)号：US07118680B2
公开(公告)日：2006-10-10
申请号：US10718372
申请日：2003-11-20
申请人： Jei-Wei Chang , Chao-Peng Chen , Min Li , Kochan Ju
发明人： Jei-Wei Chang , Chao-Peng Chen , Min Li , Kochan Ju
IPC分类号： G11B5/39
CPC分类号： G11B5/1278 , Y10T29/49052
摘要： A method for fabricating a current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the method including an electron-beam lithographic process employing both primary and secondary electron absorption and first and second self-aligned lift-off processes for patterning the capped ferromagnetic free layer and the conducting, non-magnetic spacer layer. The sensor so fabricated has reduced resistance and increased sensitivity.
摘要翻译：提供了一种用于制造合成自旋阀类型的电流垂直平面（CPP）巨磁阻（GMR）传感器的方法，该方法包括采用初级和次级电子吸收的电子束光刻工艺，第一和第二用于对封装的铁磁自由层和导电的非磁性间隔层进行图案化的自对准剥离工艺。所制造的传感器具有降低的电阻和增加的灵敏度。

9. 发明授权

US07111386B2 Lead plating method for GMR head manufacture 失效
公开(公告)号：US07111386B2
公开(公告)日：2006-09-26
申请号：US11266418
申请日：2005-11-03
申请人： Chao-Peng Chen , Kevin Lin , Jei-Wei Chang , Kochan Ju , Hui-Chuan Wang
发明人： Chao-Peng Chen , Kevin Lin , Jei-Wei Chang , Kochan Ju , Hui-Chuan Wang
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： B82Y10/00 , G11B5/3116 , G11B5/3163 , G11B5/3903 , Y10T29/49021 , Y10T29/49032 , Y10T29/49041 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49128
摘要： A major problem in Lead Overlay design for GMR structures is that the magnetic read track width is wider than the physical read track width. This is due to high interfacial resistance between the leads and the GMR layer which is an unavoidable side effect of prior art methods. The present invention uses electroplating preceded by a wet etch to fabricate the leads. This approach requires only a thin protection layer over the GMR layer to ensure that interface resistance is minimal. Using wet surface cleaning avoids sputtering defects and plating is compatible with this so the cleaned surface is preserved Only a single lithography step is needed to define the track since there is no re-deposition involved.

10. 发明申请

US20060048375A1 Lead plating method for GMR head manufacture 失效
公开(公告)号：US20060048375A1
公开(公告)日：2006-03-09
申请号：US11266418
申请日：2005-11-03
申请人： Chao-Peng Chen , Kevin Lin , Jei-Wei Chang , Kochan Ju , Hui-Chuan Wang
发明人： Chao-Peng Chen , Kevin Lin , Jei-Wei Chang , Kochan Ju , Hui-Chuan Wang
IPC分类号： G11B5/127 , H04R31/00 , C25D5/02
CPC分类号： B82Y10/00 , G11B5/3116 , G11B5/3163 , G11B5/3903 , Y10T29/49021 , Y10T29/49032 , Y10T29/49041 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49128
摘要： A major problem in Lead Overlay design for GMR structures is that the magnetic read track width is wider than the physical read track width. This is due to high interfacial resistance between the leads and the GMR layer which is an unavoidable side effect of prior art methods. The present invention uses electroplating preceded by a wet etch to fabricate the leads. This approach requires only a thin protection layer over the GMR layer to ensure that interface resistance is minimal. Using wet surface cleaning avoids sputtering defects and plating is compatible with this so the cleaned surface is preserved Only a single lithography step is needed to define the track since there is no re-deposition involved.

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