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1. 发明授权

US06442033B1 Low-cost 3D flip-chip packaging technology for integrated power electronics modules 失效
标题翻译：用于集成电力电子模块的低成本3D倒装芯片封装技术
公开(公告)号：US06442033B1
公开(公告)日：2002-08-27
申请号：US09661376
申请日：2000-09-13
申请人： Xingsheng Liu , Guo-Quan Lu
发明人： Xingsheng Liu , Guo-Quan Lu
IPC分类号： H05K706
CPC分类号： H01L23/5385 , H01L21/563 , H01L24/11 , H01L2224/05568 , H01L2224/05573 , H01L2224/056 , H01L2224/11003 , H01L2224/13099 , H01L2224/45124 , H01L2224/73203 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/12036 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/30107 , H01L2924/3025 , H01L2924/00 , H01L2224/48
摘要： Resistance and parasitic inductance resulting from interconnection of semiconductor chips in power modules are reduced to negligible levels by a robust structure which completely avoids use of wire bonds through use of ball bonding and flip-chip manufacturing processes, possibly in combination with chip scale packaging and hourglass shaped stacked solder bumps of increased compliance and controlled height/shape. Turn-off voltage overshoot is reduced to about one-half or less than a comparable wire bond packaged power module. Hourglass shaped solder bumps provide increased compliance and reliability over much increased numbers of thermal cycles over wide temperature excursions.
摘要翻译：功率模块中的半导体芯片的互连产生的电阻和寄生电感通过坚固的结构降低到可忽略的水平，这完全避免了通过使用球焊和倒装芯片制造工艺使用引线键合，可能与芯片级封装和沙漏形状堆叠的焊料凸块具有增加的柔顺性和受控的高度/形状。关断电压过冲减少到可比的电线键合封装功率模块的大约一半或更小。沙漏形状的焊料凸块在宽温度偏移方面大大增加了热循环次数，提供了更高的一致性和可靠性。

2. 发明申请

US20110128987A1 HIGH-POWER SEMICONDUCTOR LASER AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：大功率半导体激光器及其制造方法
公开(公告)号：US20110128987A1
公开(公告)日：2011-06-02
申请号：US13056137
申请日：2009-12-28
申请人： Xingsheng Liu
发明人： Xingsheng Liu
IPC分类号： H01S5/022 , H01L21/50
CPC分类号： H01S5/02476 , H01L2224/45144 , H01L2224/85203 , H01L2924/00014 , H01L2924/01004 , H01L2924/01013 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01S5/02272 , H01L2224/48
摘要： A high-power semiconductor laser includes a support block, an anode metal plate, a cathode metal plate and a chip. The support block has a step, and the two ends of the support block have bosses, in which there are screw holes. The chip is welded to an insulation plate, which is attached to the support block. The anode metal plate and the cathode metal plate are, respectively, welded with an anode insulation plate and a cathode insulation plate, which are welded on the step of the support block. The cathode of the chip is connected with a metal connecting plate. The metal connecting plate is connected to the anode metal plate and the cathode metal plate. The insulation plate and the anode metal plate are bonded using a gold wire in press-welding.
摘要翻译：大功率半导体激光器包括支撑块，阳极金属板，阴极金属板和芯片。支撑块具有台阶，并且支撑块的两端具有凸起，其中存在螺钉孔。该芯片焊接到一个连接到支撑块上的绝缘板上。阳极金属板和阴极金属板分别焊接有阳极绝缘板和阴极绝缘板，焊接在支撑块的台阶上。芯片的阴极与金属连接板连接。金属连接板连接到阳极金属板和阴极金属板。绝缘板和阳极金属板在压焊中使用金线接合。

3. 发明申请

US20150030044A1 Conduction Cooled High Power Semiconductor Laser And Method For Fabricating The Same 有权
标题翻译：传导冷却大功率半导体激光器及其制造方法
公开(公告)号：US20150030044A1
公开(公告)日：2015-01-29
申请号：US14367372
申请日：2012-11-22
申请人： Jingwei Wang , Xingsheng Liu
发明人： Jingwei Wang , Xingsheng Liu
IPC分类号： H01S5/024 , H01S5/022 , H01S5/40
CPC分类号： H01S5/02407 , H01S5/02272 , H01S5/024 , H01S5/02469 , H01S5/4018 , H01S5/4025 , H01S5/405 , H01S5/42
摘要： A conduction cooled high power semiconductor laser and a method for fabricating the same are provided. The conduction cooled high power semiconductor laser comprises a heat sink (2) and one or more semiconductor laser units (1). The semiconductor laser unit consists of a laser chip (3), a substrate (4) bonded to the laser chip for heat dissipation and electrical connection, and an insulation plate (5) soldered to the substrate for insulation and heat dissipation. The semiconductor laser unit is soldered on the heat sink with the insulation plate therebetween. The semiconductor laser unit may be tested, aged, and screened in advance, and thereby the yield of the lasers can be improved and the manufacturing costs can be reduced. The laser has desirable heat dissipation performance, high reliability, and is applicable to high temperature and other complex and volatile environments.
摘要翻译：提供了传导冷却的大功率半导体激光器及其制造方法。传导冷却的大功率半导体激光器包括散热器（2）和一个或多个半导体激光器单元（1）。半导体激光单元由激光芯片（3），与激光芯片接合以散热和电连接的基板（4）和焊接到基板上的用于绝缘和散热的绝缘板（5）组成。将半导体激光单元焊接在散热器上，其间具有绝缘板。可以预先对半导体激光器单元进行测试，老化和筛选，从而可以提高激光器的产量，并且可以降低制造成本。激光器具有理想的散热性能，高可靠性，适用于高温等复杂和易变环境。

4. 发明申请

US20080063016A1 Thermal compensation in semiconductor lasers 审中-公开
标题翻译：半导体激光器的热补偿
公开(公告)号：US20080063016A1
公开(公告)日：2008-03-13
申请号：US11520223
申请日：2006-09-13
申请人： Vikram Bhatia , Martin Hai Hu , Xingsheng Liu , David August Sniezek Loeber , Daniel Ohen Ricketts , Chung-En Zah
发明人： Vikram Bhatia , Martin Hai Hu , Xingsheng Liu , David August Sniezek Loeber , Daniel Ohen Ricketts , Chung-En Zah
IPC分类号： H01S3/04
CPC分类号： H01S5/0261 , H01S5/024 , H01S5/0425 , H01S5/0612 , H01S5/06213 , H01S5/06251 , H01S5/06256 , H01S5/22 , H01S5/2231
摘要： The present invention relates to methods for modulating a semiconductor laser and wavelength matching to a wavelength converter using monolithic micro-heaters integrated in the semiconductor laser. The present invention also relates to wavelength matching and stabilization in laser sources in general, without regard to whether the laser is modulated or whether second harmonic generation is utilized in the laser source. According to one embodiment of the present invention, a method of compensating for thermally induced patterning effects in a semiconductor laser is provided where the laser's heating element driving current IH is set to a relatively high magnitude when the laser's driving current ID is at a relatively low magnitude. Additional embodiments are disclosed and claimed.
摘要翻译：本发明涉及使用集成在半导体激光器中的单块微型加热器来调制半导体激光器和波长转换器的波长匹配的方法。本发明通常也涉及激光源中的波长匹配和稳定化，而不考虑激光是否被调制，或者是否在激光源中使用二次谐波产生。根据本发明的一个实施例，提供了一种补偿半导体激光器中的热诱导图案化效应的方法，其中激光器的加热元件驱动电流I H H被设置为相对高的幅度，驱动电流I SUB D具有相对低的幅度。公开并要求保护附加实施例。

5. 发明授权

US08737441B2 Cooling module for laser, fabricating method thereof, and semiconductor laser fabricated from the module 有权
标题翻译：用于激光的冷却模块，其制造方法和由该模块制造的半导体激光器
公开(公告)号：US08737441B2
公开(公告)日：2014-05-27
申请号：US13378294
申请日：2010-05-07
申请人： Xingsheng Liu
发明人： Xingsheng Liu
IPC分类号： H01S3/04
CPC分类号： H01S5/02423 , H01L23/473 , H01L2924/0002 , H01S5/02264 , H01S5/02272 , H01S5/02476 , H01S5/4025 , H01S5/4043 , H01L2924/00
摘要： This invention relates to semiconductor lasers, and more particularly, to a cooling module for fabricating a liquid-cooled semiconductor laser, a fabricating method, and a semiconductor laser fabricated from the module, wherein the cooling module for a laser makes use of a liquid cooling plate provided with radiating fins to cool the semiconductor chip. After replacement of the traditional micro-channel structure with the radiating fin structure, the present invention effectively reduces the resistance to flow of the cooling liquid, remarkably lowers the pressure decrease of the cooling liquid, makes it easier to seal the cooling liquid, provides stronger heat dissipating capability, effectively elongates the lifetime of the semiconductor laser, and enhances the output power and reliability of the semiconductor laser, alongside the advantages of simple fabrication and low production cost.
摘要翻译：本发明涉及半导体激光器，更具体地说，涉及一种用于制造液冷半导体激光器的冷却模块，制造方法和由该模块制造的半导体激光器，其中激光器用冷却模块利用液体冷却板上设有散热片以冷却半导体芯片。在用散热片结构替代传统的微通道结构后，本发明有效地降低了冷却液流动的阻力，显着降低了冷却液的压力降低，使得冷却液更容易密封，提供了更强的散热能力，有效延长了半导体激光器的使用寿命，提高了半导体激光器的输出功率和可靠性，以及简单的制造和低生产成本的优点。

6. 发明授权

US07486709B2 Semiconductor laser micro-heating element structure 失效
标题翻译：半导体激光微加热元件结构
公开(公告)号：US07486709B2
公开(公告)日：2009-02-03
申请号：US11542408
申请日：2006-10-03
申请人： Martin Hai Hu , Xingsheng Liu , Chung-En Zah
发明人： Martin Hai Hu , Xingsheng Liu , Chung-En Zah
IPC分类号： H01S3/04
CPC分类号： H01S5/0612 , G02F1/37 , H01S5/0261 , H01S5/0425 , H01S5/06256 , H01S5/12 , H01S5/22 , H01S5/2231
摘要： A semiconductor laser is provided comprising a semiconductor substrate, an active region, a ridge waveguide, a driving electrode structure, and a micro-heating element structure. The micro-heating element structure comprises a pair of heating element strips extending along the longitudinal dimension of the semiconductor laser. The heating element strips are on opposite sides of the ridge waveguide such that one of the heating element strips extends along one side of the ridge waveguide while a remaining heating element strip extends along another side of the ridge waveguide.
摘要翻译：提供半导体激光器，其包括半导体衬底，有源区，脊波导，驱动电极结构和微加热元件结构。微加热元件结构包括沿着半导体激光器的纵向尺寸延伸的一对加热元件条。加热元件带位于脊状波导的相对侧，使得加热元件条中的一个沿着脊状波导的一侧延伸，而剩余的加热元件条沿脊状波导的另一侧延伸。

7. 发明申请

US20080025355A1 Semiconductor laser micro-heating element structure 失效
标题翻译：半导体激光微加热元件结构
公开(公告)号：US20080025355A1
公开(公告)日：2008-01-31
申请号：US11542408
申请日：2006-10-03
申请人： Martin Hai Hu , Xingsheng Liu , Chung-En Zah
发明人： Martin Hai Hu , Xingsheng Liu , Chung-En Zah
IPC分类号： H01S3/04
CPC分类号： H01S5/0612 , G02F1/37 , H01S5/0261 , H01S5/0425 , H01S5/06256 , H01S5/12 , H01S5/22 , H01S5/2231
摘要： A semiconductor laser is provided comprising a semiconductor substrate, an active region, a ridge waveguide, a driving electrode structure, and a micro-heating element structure. The micro-heating element structure comprises a pair of heating element strips extending along the longitudinal dimension of the semiconductor laser. The heating element strips are on opposite sides of the ridge waveguide such that one of the heating element strips extends along one side of the ridge waveguide while a remaining heating element strip extends along another side of the ridge waveguide.
摘要翻译：提供半导体激光器，其包括半导体衬底，有源区，脊波导，驱动电极结构和微加热元件结构。微加热元件结构包括沿着半导体激光器的纵向尺寸延伸的一对加热元件条。加热元件带位于脊状波导的相对侧，使得加热元件条中的一个沿着脊状波导的一侧延伸，而剩余的加热元件条沿脊状波导的另一侧延伸。

8. 发明申请

US20050100073A1 Cladding-pumped quasi 3-level fiber laser/amplifier 审中-公开
标题翻译：包层泵浦准3级光纤激光器/放大器
公开(公告)号：US20050100073A1
公开(公告)日：2005-05-12
申请号：US10705032
申请日：2003-11-10
申请人： Lawrence Hughes , Xingsheng Liu , Donnell Walton , Chung-En Zah , Luis Zenteno
发明人： Lawrence Hughes , Xingsheng Liu , Donnell Walton , Chung-En Zah , Luis Zenteno
IPC分类号： H01S3/067 , H01S3/094 , H01S3/0941 , H01S3/091
CPC分类号： H01S3/06708 , H01S3/067 , H01S3/06716 , H01S3/094 , H01S3/094007 , H01S3/09415 , H01S5/2036
摘要： An optically active fiber (30) is disclosed for making a fiber laser (18) or an amplifier (16) for optically pumping by a broad area laser diode for operation in the 1.5 micron band. This double-clad structured active fiber (30) has a core (34), doped with an optically excitable erbium ion having a quasi-three-level transition. The core (3) has a core refractive index and a core cross-sectional area. An inner cladding (32) surrounds the core (34). The inner cladding (32) has an inner cladding refractive index less than the core refractive index, an inner cladding cross-sectional area between 2 and 25 times greater than that of the core cross-sectional area, and an aspect ratio greater than 1.5:1. An outer cladding (36) surrounds the inner cladding (32) and has an outer cladding refractive index less than the inner cladding refractive index.
摘要翻译：公开了一种用于制造光纤激光器（18）或放大器（16）的光学有源光纤（30），用于通过广域激光二极管光学泵浦以在1.5微米波段内操作。这种双包层结构的有源光纤（30）具有掺杂有具有准三电平转换的光学可激发的铒离子的芯（34）。芯（3）具有芯折射率和芯横截面积。内包层（32）围绕芯部（34）。内包层（32）的内包层折射率小于纤芯折射率，内包层横截面积比芯横截面积大2至25倍，纵横比大于1.5： 1。外包层（36）围绕内包层（32）并且具有小于内包层折射率的外包层折射率。

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