专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20080063016A1 Thermal compensation in semiconductor lasers 审中-公开
标题翻译：半导体激光器的热补偿
公开(公告)号：US20080063016A1
公开(公告)日：2008-03-13
申请号：US11520223
申请日：2006-09-13
申请人： Vikram Bhatia , Martin Hai Hu , Xingsheng Liu , David August Sniezek Loeber , Daniel Ohen Ricketts , Chung-En Zah
发明人： Vikram Bhatia , Martin Hai Hu , Xingsheng Liu , David August Sniezek Loeber , Daniel Ohen Ricketts , Chung-En Zah
IPC分类号： H01S3/04
CPC分类号： H01S5/0261 , H01S5/024 , H01S5/0425 , H01S5/0612 , H01S5/06213 , H01S5/06251 , H01S5/06256 , H01S5/22 , H01S5/2231
摘要： The present invention relates to methods for modulating a semiconductor laser and wavelength matching to a wavelength converter using monolithic micro-heaters integrated in the semiconductor laser. The present invention also relates to wavelength matching and stabilization in laser sources in general, without regard to whether the laser is modulated or whether second harmonic generation is utilized in the laser source. According to one embodiment of the present invention, a method of compensating for thermally induced patterning effects in a semiconductor laser is provided where the laser's heating element driving current IH is set to a relatively high magnitude when the laser's driving current ID is at a relatively low magnitude. Additional embodiments are disclosed and claimed.
摘要翻译：本发明涉及使用集成在半导体激光器中的单块微型加热器来调制半导体激光器和波长转换器的波长匹配的方法。本发明通常也涉及激光源中的波长匹配和稳定化，而不考虑激光是否被调制，或者是否在激光源中使用二次谐波产生。根据本发明的一个实施例，提供了一种补偿半导体激光器中的热诱导图案化效应的方法，其中激光器的加热元件驱动电流I H H被设置为相对高的幅度，驱动电流I SUB D具有相对低的幅度。公开并要求保护附加实施例。

2. 发明申请

US20080089373A1 WAVELENGTH CONTROL IN SEMICONDUCTOR LASERS 有权
标题翻译：半导体激光器的波长控制
公开(公告)号：US20080089373A1
公开(公告)日：2008-04-17
申请号：US11549856
申请日：2006-10-16
申请人： Vikram Bhatia , Jacques Gollier , Martin Hai Hu , David August Sniezek Loeber , Daniel Ohen Ricketts , Chung-En Zah
发明人： Vikram Bhatia , Jacques Gollier , Martin Hai Hu , David August Sniezek Loeber , Daniel Ohen Ricketts , Chung-En Zah
IPC分类号： H01S3/00
CPC分类号： H04N9/3129
摘要： The present invention relates generally to semiconductor lasers and laser scanning systems and, more particularly, to schemes for controlling wavelength in semiconductor lasers. According to one embodiment of the present invention, a method of minimizing laser wavelength variations in a semiconductor laser is provided. According to the method, one or more of the laser drive currents is configured to comprise a drive portion and a wavelength recovery portion. The wavelength recovery portion of the drive current comprises a recovery amplitude IR that is distinct from the drive amplitude ID and a recovery duration tR that is less than the drive duration tD. The recovery amplitude IR and duration tR are sufficient to recover carrier density distribution distorted by gain compression effects prior to recovery. Additional embodiments are disclosed and claimed.
摘要翻译：本发明一般涉及半导体激光器和激光扫描系统，更具体地，涉及用于控制半导体激光器中的波长的方案。根据本发明的一个实施例，提供了一种使半导体激光器中的激光波长变化最小化的方法。根据该方法，一个或多个激光驱动电流被配置为包括驱动部分和波长恢复部分。驱动电流的波长恢复部分包括不同于驱动振幅I SUB和恢复持续时间t R的恢复幅度I SUB，这小于驱动持续时间t D D。恢复振幅I R和持续时间t R N足以恢复在恢复之前由增益压缩效应失真的载流子密度分布。公开并要求保护附加实施例。

3. 发明授权

US07480317B2 Thermal compensation in semiconductor lasers 失效
标题翻译：半导体激光器的热补偿
公开(公告)号：US07480317B2
公开(公告)日：2009-01-20
申请号：US11526988
申请日：2006-09-26
申请人： Martin Hai Hu , Daniel Ohen Ricketts , Chung-En Zah
发明人： Martin Hai Hu , Daniel Ohen Ricketts , Chung-En Zah
IPC分类号： H01S3/10 , H01S3/04
CPC分类号： H01S5/06804 , H01S5/0612 , H01S5/06256
摘要： The present invention relates to relates generally to semiconductor lasers and, more particularly, to schemes for measuring and controlling the temperature of semiconductor lasers and schemes for wavelength stabilization of semiconductor lasers. According to one embodiment of the present invention, a method of driving a temperature control mechanism in a semiconductor laser is provided. According to the method, signals representing an operating temperature of the semiconductor laser and ambient temperature are generated and a target laser operating temperature that is a function of the ambient temperature signal is established. A temperature control mechanism of the semiconductor laser is then driven to increase a degree of correlation between the operating temperature signal and the target laser operating temperature. Additional embodiments are disclosed and claimed.
摘要翻译：本发明一般涉及半导体激光器，更具体地，涉及用于测量和控制半导体激光器的温度和半导体激光器的波长稳定化方案的方案。根据本发明的一个实施例，提供了一种驱动半导体激光器中的温度控制机构的方法。根据该方法，产生表示半导体激光器的工作温度和环境温度的信号，建立作为环境温度信号的函数的目标激光器工作温度。然后驱动半导体激光器的温度控制机构以增加工作温度信号和目标激光器工作温度之间的相关程度。公开并要求保护附加实施例。

4. 发明授权

US07483458B2 Wavelength control in semiconductor lasers 有权
标题翻译：半导体激光器中的波长控制
公开(公告)号：US07483458B2
公开(公告)日：2009-01-27
申请号：US11549856
申请日：2006-10-16
申请人： Vikram Bhatia , Jacques Gollier , Martin H. Hu , David A. Loeber , Daniel Ohen Ricketts , Chung-En Zah
发明人： Vikram Bhatia , Jacques Gollier , Martin H. Hu , David A. Loeber , Daniel Ohen Ricketts , Chung-En Zah
IPC分类号： H01S3/00
CPC分类号： H04N9/3129
摘要： The present invention relates generally to semiconductor lasers and laser scanning systems and, more particularly, to schemes for controlling wavelength in semiconductor lasers. According to one embodiment of the present invention, a method of minimizing laser wavelength variations in a semiconductor laser is provided. According to the method, one or more of the laser drive currents is configured to comprise a drive portion and a wavelength recovery portion. The wavelength recovery portion of the drive current comprises a recovery amplitude IR that is distinct from the drive amplitude ID and a recovery duration tR that is less than the drive duration tD. The recovery amplitude IR and duration tR are sufficient to recover carrier density distribution distorted by gain compression effects prior to recovery. Additional embodiments are disclosed and claimed.
摘要翻译：本发明一般涉及半导体激光器和激光扫描系统，更具体地，涉及用于控制半导体激光器中的波长的方案。根据本发明的一个实施例，提供了一种使半导体激光器中的激光波长变化最小化的方法。根据该方法，一个或多个激光驱动电流被配置为包括驱动部分和波长恢复部分。驱动电流的波长恢复部分包括与驱动振幅ID不同的恢复幅度IR和小于驱动持续时间tD的恢复持续时间tR。恢复幅度IR和持续时间tR足以恢复在恢复之前由增益压缩效应失真的载流子密度分布。公开并要求保护附加实施例。

5. 发明申请

US20080075132A1 Thermal compensation in semiconductor lasers 失效
标题翻译：半导体激光器的热补偿
公开(公告)号：US20080075132A1
公开(公告)日：2008-03-27
申请号：US11526988
申请日：2006-09-26
申请人： Martin Hai Hu , Daniel Ohen Ricketts , Chung-En Zah
发明人： Martin Hai Hu , Daniel Ohen Ricketts , Chung-En Zah
IPC分类号： H01S3/04
CPC分类号： H01S5/06804 , H01S5/0612 , H01S5/06256
摘要： The present invention relates to relates generally to semiconductor lasers and, more particularly, to schemes for measuring and controlling the temperature of semiconductor lasers and schemes for wavelength stabilization of semiconductor lasers. According to one embodiment of the present invention, a method of driving a temperature control mechanism in a semiconductor laser is provided. According to the method, signals representing an operating temperature of the semiconductor laser and ambient temperature are generated and a target laser operating temperature that is a function of the ambient temperature signal is established. A temperature control mechanism of the semiconductor laser is then driven to increase a degree of correlation between the operating temperature signal and the target laser operating temperature. Additional embodiments are disclosed and claimed.
摘要翻译：本发明一般涉及半导体激光器，更具体地，涉及用于测量和控制半导体激光器的温度和半导体激光器的波长稳定化方案的方案。根据本发明的一个实施例，提供了一种驱动半导体激光器中的温度控制机构的方法。根据该方法，产生表示半导体激光器的工作温度和环境温度的信号，建立作为环境温度信号的函数的目标激光器工作温度。然后驱动半导体激光器的温度控制机构以增加工作温度信号和目标激光器工作温度之间的相关程度。公开并要求保护附加实施例。

6. 发明授权

US07486709B2 Semiconductor laser micro-heating element structure 失效
标题翻译：半导体激光微加热元件结构
公开(公告)号：US07486709B2
公开(公告)日：2009-02-03
申请号：US11542408
申请日：2006-10-03
申请人： Martin Hai Hu , Xingsheng Liu , Chung-En Zah
发明人： Martin Hai Hu , Xingsheng Liu , Chung-En Zah
IPC分类号： H01S3/04
CPC分类号： H01S5/0612 , G02F1/37 , H01S5/0261 , H01S5/0425 , H01S5/06256 , H01S5/12 , H01S5/22 , H01S5/2231
摘要： A semiconductor laser is provided comprising a semiconductor substrate, an active region, a ridge waveguide, a driving electrode structure, and a micro-heating element structure. The micro-heating element structure comprises a pair of heating element strips extending along the longitudinal dimension of the semiconductor laser. The heating element strips are on opposite sides of the ridge waveguide such that one of the heating element strips extends along one side of the ridge waveguide while a remaining heating element strip extends along another side of the ridge waveguide.
摘要翻译：提供半导体激光器，其包括半导体衬底，有源区，脊波导，驱动电极结构和微加热元件结构。微加热元件结构包括沿着半导体激光器的纵向尺寸延伸的一对加热元件条。加热元件带位于脊状波导的相对侧，使得加热元件条中的一个沿着脊状波导的一侧延伸，而剩余的加热元件条沿脊状波导的另一侧延伸。

7. 发明申请

US20080025355A1 Semiconductor laser micro-heating element structure 失效
标题翻译：半导体激光微加热元件结构
公开(公告)号：US20080025355A1
公开(公告)日：2008-01-31
申请号：US11542408
申请日：2006-10-03
申请人： Martin Hai Hu , Xingsheng Liu , Chung-En Zah
发明人： Martin Hai Hu , Xingsheng Liu , Chung-En Zah
IPC分类号： H01S3/04
CPC分类号： H01S5/0612 , G02F1/37 , H01S5/0261 , H01S5/0425 , H01S5/06256 , H01S5/12 , H01S5/22 , H01S5/2231
摘要： A semiconductor laser is provided comprising a semiconductor substrate, an active region, a ridge waveguide, a driving electrode structure, and a micro-heating element structure. The micro-heating element structure comprises a pair of heating element strips extending along the longitudinal dimension of the semiconductor laser. The heating element strips are on opposite sides of the ridge waveguide such that one of the heating element strips extends along one side of the ridge waveguide while a remaining heating element strip extends along another side of the ridge waveguide.
摘要翻译：提供半导体激光器，其包括半导体衬底，有源区，脊波导，驱动电极结构和微加热元件结构。微加热元件结构包括沿着半导体激光器的纵向尺寸延伸的一对加热元件条。加热元件带位于脊状波导的相对侧，使得加热元件条中的一个沿着脊状波导的一侧延伸，而剩余的加热元件条沿脊状波导的另一侧延伸。

8. 发明授权

US08198112B2 Laser diodes comprising QWI output window and waveguide areas and methods of manufacture 失效
标题翻译：包括QWI输出窗口和波导区域的激光二极管以及制造方法
公开(公告)号：US08198112B2
公开(公告)日：2012-06-12
申请号：US12760092
申请日：2010-04-14
申请人： Chwan-Yang Chang , Chien-Chih Chen , Martin Hai Hu , Hong Ky Nguyen , Chung-En Zah
发明人： Chwan-Yang Chang , Chien-Chih Chen , Martin Hai Hu , Hong Ky Nguyen , Chung-En Zah
IPC分类号： H01L21/00 , H01L31/0256
CPC分类号： B82Y20/00 , H01S5/0092 , H01S5/06256 , H01S5/162 , H01S2302/00
摘要： In accordance with one embodiment of the present disclosure, a process of manufacturing a semiconductor laser diode comprising a gain section, a QWI output window, and QWI waveguide areas is provided. The QWI waveguide areas are fabricated using quantum well intermixing and define a QWI waveguide portion in the QWI output window of the laser diode. The QWI output window is transparent to the lasing wavelength λL. The QWI waveguide portion in the QWI output window is characterized by an energy bandgap that is larger than an energy bandgap of the gain section such that the band gap wavelength λQWI in the QWI waveguide portion and the QWI output window is shorter than the lasing wavelength λL. The QWI output window is characterized by a photoluminescent wavelength λPL. The manufacturing process comprises a λPL screening protocol that determines laser diode reliability based on a comparison of the lasing wavelength λL and the photoluminescent wavelength λPL of the QWI output window. Additional embodiments are disclosed and claimed.
摘要翻译：根据本公开的一个实施例，提供了制造包括增益部分，QWI输出窗口和QWI波导区域的半导体激光二极管的工艺。使用量子阱混合制造QWI波导区域，并在激光二极管的QWI输出窗口中定义QWI波导部分。 QWI输出窗口对于激光波长λL是透明的。 QWI输出窗口中的QWI波导部分的特征在于能量带隙大于增益部分的能带隙，使得QWI波导部分和QWI输出窗口中的带隙波长λQWI比激光波长λL短。 QWI输出窗口的特征在于光致发光波长λPL。该制造工艺包括λPL筛选方案，其基于激光波长λL和QWI输出窗口的光致发光波长λPL的比较来确定激光二极管的可靠性。公开并要求保护附加实施例。

9. 发明申请

US20110255567A1 Laser Diodes Comprising QWI Output Window and Waveguide Areas and Methods of Manufacture 失效
标题翻译：包括QWI输出窗口和波导区域的激光二极管和制造方法
公开(公告)号：US20110255567A1
公开(公告)日：2011-10-20
申请号：US12760092
申请日：2010-04-14
申请人： Chwan-Yang Chang , Chien-Chih Chen , Martin Hai Hu , Hong Ky Nguyen , Chung-En Zah
发明人： Chwan-Yang Chang , Chien-Chih Chen , Martin Hai Hu , Hong Ky Nguyen , Chung-En Zah
IPC分类号： H01S5/34 , H01L21/66 , H01L21/02
CPC分类号： B82Y20/00 , H01S5/0092 , H01S5/06256 , H01S5/162 , H01S2302/00
摘要： In accordance with one embodiment of the present disclosure, a process of manufacturing a semiconductor laser diode comprising a gain section, a QWI output window, and QWI waveguide areas is provided. The QWI waveguide areas are fabricated using quantum well intermixing and define a QWI waveguide portion in the QWI output window of the laser diode. The QWI output window is transparent to the lasing wavelength λL. The QWI waveguide portion in the QWI output window is characterized by an energy bandgap that is larger than an energy bandgap of the gain section such that the band gap wavelength λQWI in the QWI waveguide portion and the QWI output window is shorter than the lasing wavelength λL. The QWI output window is characterized by a photoluminescent wavelength λPL. The manufacturing process comprises a λPL screening protocol that determines laser diode reliability based on a comparison of the lasing wavelength λL and the photoluminescent wavelength λPL of the QWI output window. Additional embodiments are disclosed and claimed.
摘要翻译：根据本公开的一个实施例，提供了制造包括增益部分，QWI输出窗口和QWI波导区域的半导体激光二极管的工艺。使用量子阱混合制造QWI波导区域，并在激光二极管的QWI输出窗口中定义QWI波导部分。 QWI输出窗口对于激光波长λL是透明的。 QWI输出窗口中的QWI波导部分的特征在于能量带隙大于增益部分的能带隙，使得QWI波导部分和QWI输出窗口中的带隙波长λQWI比激光波长λL短。 QWI输出窗口的特征在于光致发光波长λPL。该制造工艺包括λPL筛选方案，其基于激光波长λL和QWI输出窗口的光致发光波长λPL的比较来确定激光二极管的可靠性。公开并要求保护附加实施例。

10. 发明申请

US20100265982A1 Fracture Resistant Metallization Pattern For Semiconductor Lasers 有权
标题翻译：半导体激光器的耐断裂金属化模式
公开(公告)号：US20100265982A1
公开(公告)日：2010-10-21
申请号：US12426563
申请日：2009-04-20
申请人： Satish Chandra Chaparala , Martin Hai Hu , Lawrence Charles Hughes, JR. , Chung-En Zah
发明人： Satish Chandra Chaparala , Martin Hai Hu , Lawrence Charles Hughes, JR. , Chung-En Zah
IPC分类号： H01S5/00 , H01S5/026
CPC分类号： H01S5/0425 , H01S5/0092 , H01S5/06256
摘要： Metallization patterns are provided to reduce the probability of chip fracture in semiconductor lasers. According to one embodiment disclosed herein, the pad edges of a metallization pattern extend across a plurality of crystallographic planes in the laser substrate. In this manner, cracks initiated at any given stress concentration would need to propagate across many crystallographic planes in the substrate to reach a significant size. Additional embodiments of the present disclosure relate to the respective geometries and orientations of adjacent pairs of contact pads. Still further embodiments are disclosed and claimed.
摘要翻译：提供金属化模式以减少半导体激光器中芯片断裂的可能性。根据本文公开的一个实施例，金属化图案的焊盘边缘延伸穿过激光基板中的多个结晶平面。以这种方式，在任何给定的应力集中开始的裂纹将需要传播到衬底中的许多结晶平面以达到显着的尺寸。本公开的另外的实施例涉及相邻的接触垫对的各自的几何形状和取向。公开和要求保护的另外的实施例。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式