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1. 发明授权

US09496333B2 Resurf high voltage diode 有权
公开(公告)号：US09496333B2
公开(公告)日：2016-11-15
申请号：US14622068
申请日：2015-02-13
申请人： Xin Lin , Daniel J. Blomberg , Hongning Yang , Jiang-Kai Zuo
发明人： Xin Lin , Daniel J. Blomberg , Hongning Yang , Jiang-Kai Zuo
IPC分类号： H01L29/66 , H01L29/06 , H01L29/739 , H01L29/861
CPC分类号： H01L29/063 , H01L29/0649 , H01L29/0692 , H01L29/66356 , H01L29/7391 , H01L29/861
摘要： A trench-isolated RESURF diode structure (100) is provided which includes a substrate (150) in which is formed anode (130, 132) and cathode (131) contact regions separated from one another by a shallow trench isolation region (114, 115), along with a buried cathode extension region (104) formed under a RESURF anode extension region (106, 107) such that the cathode extension region (104) extends beyond the cathode contact (131) to be sandwiched between upper and lower regions (103, 106, 107) of opposite conductivity type.

2. 发明授权

US09136323B2 Drain-end drift diminution in semiconductor devices 有权
标题翻译：半导体器件的漏极漂移减少
公开(公告)号：US09136323B2
公开(公告)日：2015-09-15
申请号：US14486104
申请日：2014-09-15
申请人： Hongning Yang , Daniel J. Blomberg , Xu Cheng , Xin Lin , Won Gi Min , Zhihong Zhang , Jiang-Kai Zuo
发明人： Hongning Yang , Daniel J. Blomberg , Xu Cheng , Xin Lin , Won Gi Min , Zhihong Zhang , Jiang-Kai Zuo
IPC分类号： H01L29/06 , H01L29/66 , H01L29/78 , H01L29/08 , H01L29/10
CPC分类号： H01L29/063 , H01L29/0653 , H01L29/0847 , H01L29/1045 , H01L29/66659 , H01L29/66681 , H01L29/7835
摘要： A method of fabricating a transistor includes forming a field isolation region in a substrate. After forming the field isolation region, dopant is implanted in a first region of a substrate for formation of a drift region. A drain region is formed in a second region of the substrate. The first and second regions laterally overlap to define a conduction path for the transistor. The first region does not extend laterally across the second region.
摘要翻译：制造晶体管的方法包括在衬底中形成场隔离区域。在形成场隔离区之后，将掺杂剂注入到用于形成漂移区的衬底的第一区域中。漏极区形成在衬底的第二区域中。第一和第二区域横向重叠以限定晶体管的导电路径。第一区域不横向跨越第二区域延伸。

3. 发明授权

US09099489B2 Bipolar transistor with high breakdown voltage 有权
标题翻译：具有高击穿电压的双极晶体管
公开(公告)号：US09099489B2
公开(公告)日：2015-08-04
申请号：US13545746
申请日：2012-07-10
申请人： Xin Lin , Daniel J. Blomberg , Jiang-Kai Zuo
发明人： Xin Lin , Daniel J. Blomberg , Jiang-Kai Zuo
IPC分类号： H01L29/02 , H01L21/02 , H01L29/66 , H01L29/732 , H01L29/06 , H01L29/417 , H01L29/08
CPC分类号： H01L29/66272 , H01L29/0607 , H01L29/063 , H01L29/0808 , H01L29/0821 , H01L29/41708 , H01L29/732
摘要： A higher breakdown voltage transistor has separated emitter, base contact, and collector contact. Underlying the emitter and the base contact are, respectively, first and second base portions of a first conductivity type. Underlying and coupled to the collector contact is a collector region of a second, opposite, conductivity type, having a central portion extending laterally toward, underneath, or beyond the base contact and separated therefrom by the second base portion. A floating collector region of the same conductivity type as the collector region underlies and is separated from the emitter by the first base portion. The collector and floating collector regions are separated by a part of the semiconductor (SC) region in which the base is formed. A further part of the SC region in which the base is formed, laterally bounds or encloses the collector region.
摘要翻译：较高的击穿电压晶体管具有分离的发射极，基极接触和集电极接触。分别位于发射极和基极接触面之下的第一和第二基极部分是第一导电类型。底部并且耦合到集电极触点的是第二相对导电类型的集电极区域，其具有横向朝向，在下面或超过基部触点延伸并且由第二基部分离的中心部分。与集电极区域相同的导电类型的浮置集电极区域位于第一基底部分的下方并与发射极分离。集电极和集电极区域由形成有基极的半导体（SC）区域的一部分分开。 SC区域的另一部分，其中形成基底，横向界定或围绕收集器区域。

4. 发明申请

US20150104920A1 SEMICONDUCTOR DEVICE AND RELATED FABRICATION METHODS 有权
标题翻译：半导体器件及相关制造方法
公开(公告)号：US20150104920A1
公开(公告)日：2015-04-16
申请号：US14575204
申请日：2014-12-18
申请人： Xin Lin , Daniel J. Blomberg , Jiang-Kai Zuo
发明人： Xin Lin , Daniel J. Blomberg , Jiang-Kai Zuo
IPC分类号： H01L29/66 , H01L21/265
CPC分类号： H01L29/6625 , H01L21/265 , H01L29/0649 , H01L29/36 , H01L29/66234 , H01L29/66272 , H01L29/73 , H01L29/732 , H01L29/735
摘要： Semiconductor device structures and related fabrication methods are provided. An exemplary semiconductor device structure includes a collector region of semiconductor material having a first conductivity type, a base region of semiconductor material within the collector region, the base region having a second conductivity type opposite the first conductivity type, and a doped region of semiconductor material having the second conductivity type, wherein the doped region is electrically connected to the base region and the collector region resides between the base region and the doped region. In exemplary embodiments, the dopant concentration of the doped region is greater than a dopant concentration of the collector region to deplete the collector region as the electrical potential of the base region exceeds that of the collector region.
摘要翻译：提供半导体器件结构和相关的制造方法。示例性的半导体器件结构包括具有第一导电类型的半导体材料的集电极区域，在集电极区域内的半导体材料的基极区域，具有与第一导电类型相反的第二导电类型的基极区域和半导体材料的掺杂区域具有第二导电类型，其中所述掺杂区域电连接到所述基极区域，并且所述集电极区域位于所述基极区域和所述掺杂区域之间。在示例性实施例中，掺杂区域的掺杂剂浓度大于集电极区域的掺杂剂浓度以消耗集电极区域，因为基极区域的电位超过集电极区域的电位。

5. 发明授权

US08946041B2 Methods for forming high gain tunable bipolar transistors 有权
标题翻译：用于形成高增益可调双极晶体管的方法
公开(公告)号：US08946041B2
公开(公告)日：2015-02-03
申请号：US13534971
申请日：2012-06-27
申请人： Xin Lin , Daniel J. Blomberg , Jiang-Kai Zuo
发明人： Xin Lin , Daniel J. Blomberg , Jiang-Kai Zuo
IPC分类号： H01L21/331 , H01L29/66 , H01L29/08 , H01L29/10 , H01L29/732 , H01L21/8249 , H01L27/06
CPC分类号： H01L29/66272 , H01L21/8249 , H01L27/0623 , H01L29/0804 , H01L29/1004 , H01L29/7322
摘要： Embodiments for forming improved bipolar transistors are provided, manufacturable by a CMOS IC process. The improved transistor comprises an emitter having first and second portions of different depths, a base underlying the emitter having a central portion of a first base width underlying the first portion of the emitter, a peripheral portion having a second base width larger than the first base width partly underlying the second portion of the emitter, and a transition zone of a third base width and lateral extent lying laterally between the first and second portions of the base, and a collector underlying the base. The gain of the transistor is larger than a conventional bipolar transistor made using the same CMOS process. By adjusting the lateral extent of the transition zone, the properties of the improved transistor can be tailored to suit different applications without modifying the underlying CMOS IC process.
摘要翻译：提供用于形成改进的双极晶体管的实施例，可通过CMOS IC工艺制造。改进的晶体管包括具有不同深度的第一和第二部分的发射器，发射器下面的基底具有位于发射器的第一部分下方的第一基底宽度的中心部分，具有大于第一基底的第二基底宽度的周边部分部分位于发射体的第二部分下方的宽度，以及位于基底的第一和第二部分之间横向置换的第三基底宽度和横向范围的过渡区，以及位于基底的收集器。晶体管的增益大于使用相同CMOS工艺制造的常规双极晶体管。通过调整过渡区域的横向范围，可以调整改进晶体管的性能以适应不同的应用，而无需修改底层的CMOS IC工艺。

6. 发明申请

US20150004768A1 DRAIN-END DRIFT DIMINUTION IN SEMICONDUCTOR DEVICES 有权
标题翻译：半导体器件中的引出端DRIFT分解
公开(公告)号：US20150004768A1
公开(公告)日：2015-01-01
申请号：US14486104
申请日：2014-09-15
申请人： Hongning Yang , Daniel J. Blomberg , Xu Cheng , Xin Lin , Won Gi Min , Zhihong Zhang , Jiang-Kai Zuo
发明人： Hongning Yang , Daniel J. Blomberg , Xu Cheng , Xin Lin , Won Gi Min , Zhihong Zhang , Jiang-Kai Zuo
IPC分类号： H01L29/06 , H01L29/66 , H01L29/10
CPC分类号： H01L29/063 , H01L29/0653 , H01L29/0847 , H01L29/1045 , H01L29/66659 , H01L29/66681 , H01L29/7835
摘要： A method of fabricating a transistor includes forming a field isolation region in a substrate. After forming the field isolation region, dopant is implanted in a first region of a substrate for formation of a drift region. A drain region is formed in a second region of the substrate. The first and second regions laterally overlap to define a conduction path for the transistor. The first region does not extend laterally across the second region.
摘要翻译：制造晶体管的方法包括在衬底中形成场隔离区域。在形成场隔离区之后，将掺杂剂注入到用于形成漂移区的衬底的第一区域中。漏极区形成在衬底的第二区域中。第一和第二区域横向重叠以限定晶体管的导电路径。第一区域不横向跨越第二区域延伸。

7. 发明授权

US09893164B2 Bipolar transistor device fabrication methods 有权
公开(公告)号：US09893164B2
公开(公告)日：2018-02-13
申请号：US14844608
申请日：2015-09-03
申请人： Xin Lin , Daniel J Blomberg , Jiang-Kai Zuo
发明人： Xin Lin , Daniel J Blomberg , Jiang-Kai Zuo
IPC分类号： H02H9/04 , H01L21/331 , H01L29/73 , H01L27/02 , H01L29/66 , H01L29/735 , H01L21/265 , H01L21/266 , H01L21/762 , H01L29/06 , H01L29/10 , H01L29/08
CPC分类号： H01L29/6625 , H01L21/26513 , H01L21/266 , H01L21/76224 , H01L29/0649 , H01L29/08 , H01L29/0808 , H01L29/0821 , H01L29/1008 , H01L29/735
摘要： A method of fabricating a bipolar transistor device includes performing a first plurality of implantation procedures to implant dopant of a first conductivity type to form emitter and collector regions laterally spaced from one another in a semiconductor substrate, and performing a second plurality of implantation procedures to implant dopant of a second conductivity type in the semiconductor substrate to form a composite base region. The composite base region includes a base contact region, a buried region through which a buried conduction path between the emitter and collector regions is formed during operation, and a base link region electrically connecting the base contact region and the buried region. The base link region has a dopant concentration level higher than the buried region and is disposed laterally between the emitter and collector regions.

8. 发明授权

US09466687B2 Methods for producing bipolar transistors with improved stability 有权
标题翻译：制造稳定性提高的双极晶体管的方法
公开(公告)号：US09466687B2
公开(公告)日：2016-10-11
申请号：US14157317
申请日：2014-01-16
申请人： Xin Lin , Daniel J. Blomberg , Hongning Yang , Jiang-Kai Zuo
发明人： Xin Lin , Daniel J. Blomberg , Hongning Yang , Jiang-Kai Zuo
IPC分类号： H01L21/331 , H01L29/66 , H01L21/8228 , H01L27/082 , H01L29/735
CPC分类号： H01L29/6625 , H01L21/82285 , H01L27/0826 , H01L29/735
摘要： Instability and drift sometimes observed in bipolar transistors, having a portion of the base extending to the transistor surface between the emitter and base contact, can be reduced or eliminated by providing a further doped region of the same conductivity type as the emitter at the transistor surface between the emitter and the base contact. The further region is desirably more heavily doped than the base region at the surface and less heavily doped than the adjacent emitter. In another embodiment, a still or yet further region of the same conductivity type as the emitter is provided either between the further region and the emitter or laterally within the emitter. The still or yet further region is desirably more heavily doped than the further region. Such further regions shield the near surface base region from trapped charge that may be present in dielectric layers or interfaces overlying the transistor surface.
摘要翻译：通过提供与晶体管表面上的发射极相同的导电类型的另外的掺杂区域，可以减少或消除具有延伸到发射极和基极接触之间的晶体管表面的基极的一部分的双极晶体管中的不稳定性和漂移在发射极和基极之间。另外的区域期望比表面上的基极区域重掺杂，并且比相邻的发射极更重掺杂。在另一个实施例中，与发射器相同的导电类型的仍然还是另外的区域被提供在另外的区域和发射极之间或者在发射极内侧。仍然还是进一步的区域期望比其他区域更重掺杂。这样的另外的区域屏蔽近表面碱基区域可能存在于覆盖晶体管表面的电介质层或界面中的俘获电荷。

9. 发明申请

US20150155350A1 Resurf High Voltage Diode 有权
标题翻译： Resurf高压二极管
公开(公告)号：US20150155350A1
公开(公告)日：2015-06-04
申请号：US14622068
申请日：2015-02-13
申请人： Xin Lin , Daniel J. Blomberg , Hongning Yang , Jiang-Kai Zuo
发明人： Xin Lin , Daniel J. Blomberg , Hongning Yang , Jiang-Kai Zuo
IPC分类号： H01L29/06 , H01L29/861
CPC分类号： H01L29/063 , H01L29/0649 , H01L29/0692 , H01L29/66356 , H01L29/7391 , H01L29/861
摘要： A trench-isolated RESURF diode structure (100) is provided which includes a substrate (150) in which is formed anode (130, 132) and cathode (131) contact regions separated from one another by a shallow trench isolation region (114, 115), along with a buried cathode extension region (104) formed under a RESURF anode extension region (106, 107) such that the cathode extension region (104) extends beyond the cathode contact (131) to be sandwiched between upper and lower regions (103, 106, 107) of opposite conductivity type.
摘要翻译：提供了沟槽隔离的RESURF二极管结构（100），其包括衬底（150），其中形成阳极（130,132）和阴极（131）接触区域，所述接触区域由浅沟槽隔离区域（114,115）），以及形成在RESURF阳极延伸区域（106,107）下方的掩埋阴极延伸区域（104），使得阴极延伸区域（104）延伸超出阴极接触（131）以夹在上部和下部区域之间 103,106,107）。

10. 发明授权

US08853780B2 Semiconductor device with drain-end drift diminution 有权
标题翻译：漏极端漂移的半导体器件减少
公开(公告)号：US08853780B2
公开(公告)日：2014-10-07
申请号：US13465761
申请日：2012-05-07
申请人： Hongning Yang , Daniel J. Blomberg , Xu Cheng , Xin Lin , Won Gi Min , Zhihong Zhang , Jiang-Kai Zuo
发明人： Hongning Yang , Daniel J. Blomberg , Xu Cheng , Xin Lin , Won Gi Min , Zhihong Zhang , Jiang-Kai Zuo
IPC分类号： H01L29/66
CPC分类号： H01L29/063 , H01L29/0653 , H01L29/0847 , H01L29/1045 , H01L29/66659 , H01L29/66681 , H01L29/7835
摘要： A device includes a semiconductor substrate, source and drain regions in the semiconductor substrate, a channel region in the semiconductor substrate between the source and drain regions through which charge carriers flow during operation from the source region to the drain region, and a drift region in the semiconductor substrate, on which the drain region is disposed, and through which the charge carriers drift under an electric field arising from application of a bias voltage between the source and drain regions. A PN junction along the drift region includes a first section at the drain region and a second section not at the drain region. The drift region has a lateral profile that varies such that the first section of the PN junction is shallower than the second section of the PN junction.
摘要翻译：一种器件包括半导体衬底，半导体衬底中的源极和漏极区域，在源极和漏极区域之间的半导体衬底中的沟道区域，电荷载体在从源极区域到漏极区域的工作期间流过该沟道区域，以及漂移区域其上设置有漏极区的半导体衬底，并且电荷载流子在源极和漏极区域之间施加偏压产生的电场下漂移。沿着漂移区域的PN结包括在漏极区域处的第一部分和不在漏极区域的第二部分。漂移区域具有变化的横向轮廓，使得PN结的第一部分比PN结的第二部分浅。

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