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1. 发明授权

US08785932B2 IR sensing transistor and manufacturing method of display device including the same 有权
标题翻译：红外感测晶体管及包括其的显示装置的制造方法
公开(公告)号：US08785932B2
公开(公告)日：2014-07-22
申请号：US13182235
申请日：2011-07-13
申请人： Suk Won Jung , Byeong Hoon Cho , Sung Hoon Yang , Woong Kwon Kim , Sang Youn Han , Dae Cheol Kim , Ki-Hun Jeong , Kyung-Sook Jeon , Seung Mi Seo , Jung-Suk Bang , Kun-Wook Han
发明人： Suk Won Jung , Byeong Hoon Cho , Sung Hoon Yang , Woong Kwon Kim , Sang Youn Han , Dae Cheol Kim , Ki-Hun Jeong , Kyung-Sook Jeon , Seung Mi Seo , Jung-Suk Bang , Kun-Wook Han
IPC分类号： H01L33/50
CPC分类号： H01L31/18 , G02F1/13338 , G02F2001/13312 , G06F3/042 , H01L29/42384 , H01L29/78633
摘要： An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor; a source electrode and a drain electrode formed on respective ones of the ohmic contact members; a passivation layer formed on the source electrode and the drain electrode; and a gate electrode formed on the passivation layer, wherein substantially all of the gate insulating layer lies on the light blocking layer.
摘要翻译：根据本发明的示例性实施例的IR感测晶体管包括：形成在基板上的遮光层; 形成在所述遮光层上的栅极绝缘层; 形成在栅极绝缘层上的半导体; 形成在所述半导体上的一对欧姆接触构件; 源电极和漏电极，形成在各个欧姆接触元件上; 形成在源电极和漏电极上的钝化层; 以及形成在所述钝化层上的栅电极，其中所述栅极绝缘层基本上全部位于所述遮光层上。

2. 发明授权

US08174015B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08174015B2
公开(公告)日：2012-05-08
申请号：US12761958
申请日：2010-04-16
申请人： Ki-Hun Jeong , Byeong-Hoon Cho , Jung-Suk Bang , Sang-Youn Han , Woong-Kwon Kim , Sung-Hoon Yang , Suk Won Jung , Dae-Cheol Kim , Kyung-Sook Jeon , Seung Mi Seo
发明人： Ki-Hun Jeong , Byeong-Hoon Cho , Jung-Suk Bang , Sang-Youn Han , Woong-Kwon Kim , Sung-Hoon Yang , Suk Won Jung , Dae-Cheol Kim , Kyung-Sook Jeon , Seung Mi Seo
IPC分类号： H01L29/04
CPC分类号： G06F3/0421 , G06F3/0412 , H01L27/1251 , H01L27/323
摘要： A display device includes a lower panel including a lower substrate and a pixel transistor formed on the lower substrate; and an upper panel facing the lower panel, and including an upper substrate, a sensing transistor formed on the upper substrate, and a readout transistor connected to the sensing transistor and transmitting a signal. The readout transistor includes a first lower gate electrode formed on the upper substrate, a first semiconductor layer formed on the first lower gate electrode and overlaps the first gate electrode, and a first source electrode and a first drain electrode disposed on the first semiconductor layer. The sensing transistor includes a light blocking film disposed on the upper substrate, a second lower gate electrode contacting the light blocking film on the light blocking film, a second semiconductor layer overlapping the light blocking film on the second lower gate electrode, a second source electrode and a second drain electrode formed on the second semiconductor layer, and a second upper gate electrode overlapping the second semiconductor layer on the second source electrode and the second drain electrode.
摘要翻译：显示装置包括：下面板，包括下基板和形成在下基板上的像素晶体管; 以及面向下面板的上面板，并且包括上基板，形成在上基板上的检测晶体管，以及连接到感测晶体管并传输信号的读出晶体管。读出晶体管包括形成在上基板上的第一下栅极电极，形成在第一下栅电极上并与第一栅电极重叠的第一半导体层，以及设置在第一半导体层上的第一源电极和第一漏电极。感测晶体管包括设置在上基板上的遮光膜，与遮光膜接触的第二下栅电极，与第二下栅电极上的遮光膜重叠的第二半导体层，第二源电极以及形成在第二半导体层上的第二漏电极和与第二源电极和第二漏电极上的第二半导体层重叠的第二上栅电极。

3. 发明申请

US20110057189A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20110057189A1
公开(公告)日：2011-03-10
申请号：US12761958
申请日：2010-04-16
申请人： Ki-Hun JEONG , Byeong-Hoon Cho , Jung-Suk Bang , Sang-Youn Han , Woong-Kwon Kim , Sung-Hoon Yang , Suk Won Jung , Dae-Cheol Kim , Kyung-Sook Jeon , Seung Mi Seo
发明人： Ki-Hun JEONG , Byeong-Hoon Cho , Jung-Suk Bang , Sang-Youn Han , Woong-Kwon Kim , Sung-Hoon Yang , Suk Won Jung , Dae-Cheol Kim , Kyung-Sook Jeon , Seung Mi Seo
IPC分类号： H01L33/08 , H01L21/336
CPC分类号： G06F3/0421 , G06F3/0412 , H01L27/1251 , H01L27/323
摘要： A display device includes a lower panel including a lower substrate and a pixel transistor formed on the lower substrate; and an upper panel facing the lower panel, and including an upper substrate, a sensing transistor formed on the upper substrate, and a readout transistor connected to the sensing transistor and transmitting a signal. The readout transistor includes a first lower gate electrode formed on the upper substrate, a first semiconductor layer formed on the first lower gate electrode and overlaps the first gate electrode, and a first source electrode and a first drain electrode disposed on the first semiconductor layer. The sensing transistor includes a light blocking film disposed on the upper substrate, a second lower gate electrode contacting the light blocking film on the light blocking film, a second semiconductor layer overlapping the light blocking film on the second lower gate electrode, a second source electrode and a second drain electrode formed on the second semiconductor layer, and a second upper gate electrode overlapping the second semiconductor layer on the second source electrode and the second drain electrode.
摘要翻译：显示装置包括：下面板，包括下基板和形成在下基板上的像素晶体管; 以及面向下面板的上面板，并且包括上基板，形成在上基板上的检测晶体管，以及连接到感测晶体管并传输信号的读出晶体管。读出晶体管包括形成在上基板上的第一下栅极电极，形成在第一下栅电极上并与第一栅电极重叠的第一半导体层，以及设置在第一半导体层上的第一源电极和第一漏电极。感测晶体管包括设置在上基板上的遮光膜，与遮光膜接触的第二下栅电极，与第二下栅电极上的遮光膜重叠的第二半导体层，第二源电极以及形成在第二半导体层上的第二漏电极和与第二源电极和第二漏电极上的第二半导体层重叠的第二上栅电极。

4. 发明授权

US08698167B2 Light sensor and display apparatus having the same 有权
标题翻译：光传感器及其显示装置
公开(公告)号：US08698167B2
公开(公告)日：2014-04-15
申请号：US13226980
申请日：2011-09-07
申请人： Woongkwon Kim , Daecheol Kim , Ki-Hun Jeong , SungHoon Yang , Yunjong Yeo , Sang Youn Han , Sungryul Kim , Suk Won Jung , Byeonghoon Cho , HeeJoon Kim , Hong-Kee Chin , Kyung-Sook Jeon , Seungmi Seo , Kyung-ho Park , Jung suk Bang , Kun-Wook Han , Mi-Seon Seo
发明人： Woongkwon Kim , Daecheol Kim , Ki-Hun Jeong , SungHoon Yang , Yunjong Yeo , Sang Youn Han , Sungryul Kim , Suk Won Jung , Byeonghoon Cho , HeeJoon Kim , Hong-Kee Chin , Kyung-Sook Jeon , Seungmi Seo , Kyung-ho Park , Jung suk Bang , Kun-Wook Han , Mi-Seon Seo
IPC分类号： H01L27/15
CPC分类号： H01L27/14632 , G02F1/13338 , G02F2001/13312 , G06F3/0412 , G06F3/042 , H01L27/14621
摘要： In a display apparatus, a light sensor of a display includes a light sensing layer, a source electrode, a drain electrode, an insulating layer, and a gate electrode to sense light from an external source. The light sensing layer is disposed on the substrate to sense light, and the source and drain electrodes are disposed on the light sensing layer and are covered by the insulating layer. The gate electrode is disposed on the insulating layer. An edge of the gate electrode is disposed on the light sensing layer at least in an area where the light sensing layer is overlapped with the source and drain electrodes.
摘要翻译：在显示装置中，显示器的光传感器包括感光层，源电极，漏电极，绝缘层和栅电极，用于检测来自外部源的光。光感测层设置在基板上以感测光，并且源极和漏极设置在光感测层上并被绝缘层覆盖。栅电极设置在绝缘层上。栅电极的边缘至少在光感测层与源电极和漏电极重叠的区域中设置在感光层上。

5. 发明授权

US08804086B2 Anisotropic conductive film, method of manufacturing the same and display apparatus having the same 有权
标题翻译：各向异性导电膜，其制造方法以及具有该各向异性导电膜的显示装置
公开(公告)号：US08804086B2
公开(公告)日：2014-08-12
申请号：US12758824
申请日：2010-04-13
申请人： Suk Won Jung , Woongkwon Kim , Daecheol Kim , SungHoon Yang , Sang Youn Han , Byeonghoon Cho , Ki-Hun Jeong , Kyung-Sook Jeon , jung suk Bang
发明人： Suk Won Jung , Woongkwon Kim , Daecheol Kim , SungHoon Yang , Sang Youn Han , Byeonghoon Cho , Ki-Hun Jeong , Kyung-Sook Jeon , jung suk Bang
IPC分类号： G02F1/1345 , G02F1/1339
CPC分类号： G02F1/13452 , H05K3/323 , H05K2201/0212 , H05K2201/10136 , H05K2201/10674
摘要： An anisotropic conductive film includes a first thin film layer including concave portions, conductive balls arranged in the concave portions, insulating balls disposed on and between the conductive balls and each having a diameter smaller than the conductive balls, and a second thin film layer disposed covering the insulating balls. A display apparatus includes a pad part and a driving chip, which are electrically connected by the anisotropic conductive film.
摘要翻译：各向异性导电膜包括：第一薄膜层，包括凹部，布置在凹部中的导电球，设置在导电球之间和之间的绝缘球，每个具有小于导电球的直径;以及第二薄膜层，绝缘球。显示装置包括通过各向异性导电膜电连接的焊盘部分和驱动芯片。

6. 发明授权

US08466892B2 Display apparatus and method of driving the same 有权
标题翻译：显示装置及其驱动方法
公开(公告)号：US08466892B2
公开(公告)日：2013-06-18
申请号：US12979964
申请日：2010-12-28
申请人： Suk Won Jung , SungHoon Yang , Woongkwon Kim , Sang Youn Han , Byeonghoon Cho , Daecheol Kim , Ki-Hun Jeong , Kyung-Sook Jeon , Jung suk Bang
发明人： Suk Won Jung , SungHoon Yang , Woongkwon Kim , Sang Youn Han , Byeonghoon Cho , Daecheol Kim , Ki-Hun Jeong , Kyung-Sook Jeon , Jung suk Bang
IPC分类号： G06F3/041 , G06F3/042
CPC分类号： G06F3/044 , G06F3/0412
摘要： A display apparatus includes a display panel, sensor circuits, and a detection circuit. Each sensor circuit senses at least two external signals different from each other and outputs a sensing signal. The detection circuit receives the sensing signal to detect a position to which the external signals are applied. Each sensor circuit includes sensors commonly connected to an output terminal, a scan line which receives a scan signal, a capacitor disposed between the scan line and the output terminal, charged with a first voltage in response to the scan signal, and charged with a second voltage greater than the first voltage in response to the current signal after the scan line is floated, a switching device which outputs the sensing signal in response to the second voltage, and a readout line which applies the sensing signal output from the switching device to the detection circuit.
摘要翻译：显示装置包括显示面板，传感器电路和检测电路。每个传感器电路感测至少两个彼此不同的外部信号，并输出感测信号。检测电路接收检测信号以检测施加外部信号的位置。每个传感器电路包括共同连接到输出端的传感器，接收扫描信号的扫描线，设置在扫描线和输出端之间的电容器，响应于扫描信号而被充电第一电压，响应于扫描线漂移之后的电流信号而大于第一电压的电压;响应于第二电压输出感测信号的开关装置;以及读出线，其将从开关装置输出的感测信号施加到检测电路。

7. 发明授权

US09128563B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US09128563B2
公开(公告)日：2015-09-08
申请号：US13366683
申请日：2012-02-06
申请人： Suk Won Jung , Sung Hoon Yang , Sang-Youn Han , Seung Mi Seo , Mi-Seon Seo
发明人： Suk Won Jung , Sung Hoon Yang , Sang-Youn Han , Seung Mi Seo , Mi-Seon Seo
IPC分类号： H01L29/04 , H01L29/10 , H01L31/00 , G06F3/042 , G06F3/041 , G02F1/1333
CPC分类号： G06F3/042 , G02F1/13338 , G06F3/0412
摘要： A display device includes: a substrate; an infrared sensing transistor on the substrate; a readout transistor connected to the infrared sensing transistor; a power source line; and a light blocking member on the infrared sensing transistor, where the infrared sensing transistor includes a light blocking film on the substrate, a first gate electrode contacting and overlapping the light blocking film and connected to a power source line, a first semiconductor layer on the first gate electrode overlapping the light blocking film, and first source and drain electrodes on the first semiconductor layer, where the readout transistor includes a second gate electrode on the substrate, a second semiconductor layer on the second gate electrode and overlapping the second gate electrode, and second source and drain electrodes the second semiconductor layer, and where the power source line and the first gate electrode are at a same layer.
摘要翻译：显示装置包括：基板; 基板上的红外感测晶体管; 连接到红外感测晶体管的读出晶体管; 电源线; 以及所述红外感测晶体管上的遮光构件，其中所述红外感测晶体管在所述基板上包括遮光膜，与所述遮光膜接触并重叠并连接到电源线的第一栅电极，与遮光膜重叠的第一栅电极以及第一半导体层上的第一源电极和漏电极，其中所述读出晶体管在所述衬底上包括第二栅电极，所述第二栅电极上的第二半导体层与所述第二栅电极重叠，以及第二源极和漏极，第二半导体层，以及其中电源线和第一栅电极处于同一层。

8. 发明授权

US09142704B2 Photosensor, display device including the same, and driving method thereof 有权
标题翻译：光传感器，包括其的显示装置及其驱动方法
公开(公告)号：US09142704B2
公开(公告)日：2015-09-22
申请号：US13540677
申请日：2012-07-03
申请人： Suk Won Jung , Seung Mi Seo , Sung Hoon Yang
发明人： Suk Won Jung , Seung Mi Seo , Sung Hoon Yang
IPC分类号： G06F3/042 , G06F3/041 , H01L31/167 , G02F1/1333 , G02F1/133
CPC分类号： H01L31/167 , G02F1/13338 , G02F2001/13312 , G06F3/0412 , G06F3/0416 , G06F3/0421
摘要： A photosensor includes a sensing switching element, a sensing element, and a reset switching element. The sensing switching element includes an output terminal connected to a sensing signal line, a control terminal connected to a first gate line, and an input terminal connected to the first node. The sensing element includes an output terminal connected to a first node, a control terminal connected a second gate line disposed next to the first gate line, and an input terminal connected to a source voltage line transmitting a source voltage. The sensing element senses light. The reset switching element includes an output terminal connected to the first node, a control terminal connected to the second gate line, and an input terminal connected to a driving voltage line transmitting a driving voltage.
摘要翻译：光传感器包括感测开关元件，感测元件和复位开关元件。感测开关元件包括连接到感测信号线的输出端子，连接到第一栅极线的控制端子和连接到第一节点的输入端子。感测元件包括连接到第一节点的输出端子，连接在第一栅极线旁边的第二栅极线的控制端子以及连接到发送源极电压的源极电压线的输入端子。传感元件感光。复位开关元件包括连接到第一节点的输出端子，连接到第二栅极线的控制端子和连接到传输驱动电压的驱动电压线的输入端子。

9. 发明授权

US09345568B2 Retinal prosthesis system using nanowire light detector, and manufacturing method thereof 有权
标题翻译：使用纳米线光检测器的视网膜假体系统及其制造方法
公开(公告)号：US09345568B2
公开(公告)日：2016-05-24
申请号：US13983518
申请日：2012-05-04
申请人： Dong Il Cho , Suk Won Jung , Sang Min Lee , Sun Kil Park , Jae Hyun Ahn , Seok Jun Hong , Hyoung Jung Yoo
发明人： Dong Il Cho , Suk Won Jung , Sang Min Lee , Sun Kil Park , Jae Hyun Ahn , Seok Jun Hong , Hyoung Jung Yoo
IPC分类号： A61F2/14 , A61N1/05 , A61N1/36
CPC分类号： A61N1/36046 , A61N1/0543 , A61N1/36
摘要： A retinal prosthesis system can comprise: a flexible substrate; a nanowire light detector which is placed on the substrate, and comprises one or more nanowires of which the resistance changes according to the applied light; one or more micro-electrodes which are placed on the substrate, are electrically connected to the nanowire light detector, and come in contact with retinal cells; and an electric power supply source for applying electric power to the nanowire light detector and the micro-electrodes. The retinal prosthesis system can be implemented into a very thin and flexible substrate type high resolution retinal system by manufacturing a nanowire light detector on a substrate in which micro-electrodes are implemented.
摘要翻译：视网膜假体系统可以包括：柔性基底; 纳米线光检测器，其被放置在基板上，并且包括电阻根据所施加的光而改变的一个或多个纳米线; 放置在基板上的一个或多个微电极与纳米线光检测器电连接，并与视网膜细胞接触; 以及用于对纳米线光检测器和微电极施加电力的电源。通过在其上实施微电极的基板上制造纳米线光检测器，可以将视网膜假体系统实现为非常薄且柔性的基板型高分辨率视网膜系统。

10. 发明授权

US07452806B2 Method of forming inductor in semiconductor device 有权
标题翻译：在半导体器件中形成电感器的方法
公开(公告)号：US07452806B2
公开(公告)日：2008-11-18
申请号：US11882047
申请日：2007-07-30
申请人： Sang Il Hwang , Suk Won Jung
发明人： Sang Il Hwang , Suk Won Jung
IPC分类号： H01L21/4763
CPC分类号： H01L21/31144 , H01L21/02063 , H01L21/7681 , H01L21/76814 , H01L23/5227 , H01L28/10 , H01L2924/0002 , H01L2924/00
摘要： Disclosed herein is a method of forming an inductor in a semiconductor device, the method including forming an etching-prevention film, a first interlayer insulating film, and a first hard mask film over a silicon semiconductor substrate in this sequence; selectively etching the first hard mask film to form a hole; forming a second interlayer insulating film over the first hard mask film; forming a second hard mask film over the second interlayer insulating film; forming a photoresist pattern having a trench forming opening over the second hard mask film; removing a part of the second hard mask film and a part of the second interlayer insulating film by using the photoresist pattern as an etching mask, to form a first trench in the second interlayer insulating film; removing the photoresist pattern and polymers produced in the first trench by ashing and cleaning process; etching the second interlayer insulating film by using the second hard mask film as an etching mask until the first hard mask film is exposed to form a second trench in the second interlayer insulating film, and subsequently, etching the first interlayer insulating film by using both the first hard mask film and the second hard mask film as etching masks until the etching-prevention film is exposed, to form a hole in the first interlayer insulating film; and removing polymers produced in the second trench and the second hole by ashing and cleaning processes.
摘要翻译：这里公开了一种在半导体器件中形成电感器的方法，该方法包括以下顺序在硅半导体衬底上形成防蚀膜，第一层间绝缘膜和第一硬掩模膜; 选择性地蚀刻第一硬掩模膜以形成孔; 在所述第一硬掩模膜上形成第二层间绝缘膜; 在所述第二层间绝缘膜上形成第二硬掩模膜; 在所述第二硬掩模膜上形成具有沟槽形成开口的光致抗蚀剂图案; 通过使用光致抗蚀剂图案作为蚀刻掩模去除第二硬掩模膜的一部分和第二层间绝缘膜的一部分，以在第二层间绝缘膜中形成第一沟槽; 通过灰化和清洁过程去除在第一沟槽中产生的光致抗蚀剂图案和聚合物; 通过使用第二硬掩模膜作为蚀刻掩模蚀刻第二层间绝缘膜，直到第一硬掩模膜暴露以在第二层间绝缘膜中形成第二沟槽，并且随后使用两者来蚀刻第一层间绝缘膜第一硬掩模膜和第二硬掩模膜作为蚀刻掩模，直到防蚀膜暴露，以在第一层间绝缘膜中形成孔; 以及通过灰化和清洁方法去除在第二沟槽和第二孔中产生的聚合物。

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