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1. 发明授权

US5476693A Method for the deposition of diamond film by high density direct current glow discharge 失效
标题翻译：通过高密度直流辉光放电沉积金刚石膜的方法
公开(公告)号：US5476693A
公开(公告)日：1995-12-19
申请号：US348110
申请日：1994-11-25
申请人： Wook-Seong Lee , Young-Joon Baik , Kwang Y. Eun
发明人： Wook-Seong Lee , Young-Joon Baik , Kwang Y. Eun
IPC分类号： C23C16/27 , B05D3/06 , C23C16/26
CPC分类号： C23C16/272 , Y10T428/30
摘要： There is disclosed a method for depositing a diamond film on a substrate which utilizes high density direct current glow discharge at a glow-arc transition region to form plasma between a cathode and an anode in a reactor, wherein the cathode maintains its temperature at a range of 2,100 to 2,300.degree. C. and is composed of a plurality of U-shaped filaments which are aligned parallel to one another to form an array and each of which is made by bending a conductive wire.
摘要翻译：公开了一种在衬底上沉积金刚石膜的方法，其在辉光弧过渡区域利用高密度直流辉光放电，以在反应器中在阴极和阳极之间形成等离子体，其中阴极保持其温度在一定范围内为2100〜2300℃，并且由多个相互平行排列的U形长丝组成，形成阵列，并且各自通过弯曲导线制成。

2. 发明授权

US06786176B2 Diamond film depositing apparatus and method thereof 失效
标题翻译：金刚石膜沉积设备及其方法
公开(公告)号：US06786176B2
公开(公告)日：2004-09-07
申请号：US10122459
申请日：2002-04-15
申请人： Wook-Seong Lee , Young Joon Baik , Kwang Yong Eun
发明人： Wook-Seong Lee , Young Joon Baik , Kwang Yong Eun
IPC分类号： C23C1600
CPC分类号： H01J37/32027 , H01J37/32009 , H01J37/32541
摘要： A diamond film depositing apparatus and method are disclosed in which a uniform and large plasma is formed on a substrate having a diameter of larger than 100 mm without using a heated filament cathode, without applying a magnetic field thereto, and without using a ballast resistance. The thusly formed plasma is maintained stably for a long time, so that a diamond thick film having a diameter of larger than 4 inches and a thickness of over hundreds of &mgr;m can be deposited on a flat or curved substrate and also on a Si wafer.
摘要翻译：公开了一种金刚石膜沉积设备和方法，其中在不使用加热的灯丝阴极的情况下，在直径大于100mm的基板上形成均匀且大的等离子体，而不对其施加磁场，并且不使用耐镇流性。这样形成的等离子体长时间保持稳定，使得直径大于4英寸，厚度超过数百个的金刚石厚膜可以沉积在平坦或弯曲的基板上以及Si晶片上。

3. 发明授权

US06399151B2 Diamond film depositing apparatus and method thereof 失效
公开(公告)号：US06399151B2
公开(公告)日：2002-06-04
申请号：US09427897
申请日：1999-10-27
申请人： Wook-Seong Lee , Young Joon Baik , Kwang Yong Eun
发明人： Wook-Seong Lee , Young Joon Baik , Kwang Yong Eun
IPC分类号： C23C1627
CPC分类号： H01J37/32027 , H01J37/32009 , H01J37/32541
摘要： A diamond film depositing apparatus and method are disclosed in which a uniform and large plasma is formed on a substrate having a diameter of larger than 100 mm without using a heated filament cathode, without applying a magnetic field thereto, and without using a ballast resistance. The thusly formed plasma is maintained stably for a long time, so that a diamond thick film having a diameter of larger than 4 inches and a thickness of over hundreds of &mgr;m can be deposited on a flat or curved substrate and also on a Si wafer.

4. 发明授权

US06365230B1 Method of manufacturing a diamond film coated cutting tool 有权
标题翻译：金刚石薄膜涂层切割工具的制造方法
公开(公告)号：US06365230B1
公开(公告)日：2002-04-02
申请号：US09459026
申请日：1999-12-10
申请人： Young Joon Baik , Wook-Seong Lee , Kwang Yong Eun , Ki Woong Chae
发明人： Young Joon Baik , Wook-Seong Lee , Kwang Yong Eun , Ki Woong Chae
IPC分类号： C23C1627
CPC分类号： C23C14/044 , C23C16/0209 , C23C16/0254 , C23C16/27 , Y10T428/30
摘要： In order to provide an excellent toughness and a sufficient adhesive force without any limit in the content of other carbides in the substrate material and Co and in the size of the cemented carbides grains, the present invention provides a diamond film coated cutting tool, comprising a surface layer which cemented carbide grains are grown abnormally on the cemented carbide substrate, and a diamond film formed on the surface layer, and also a method for manufacturing a diamond film coated cutting tool, comprising the steps of heat-treating a surface of a cemented carbide substrate under a decarburizing atmosphere until the surface changes to a &eegr; phase, heat-treating the surface-decarburized cemented carbide substrate under a carburized atmosphere, depositing a diamond film on the carburized surface of the cemented carbide substrate.
摘要翻译：为了提供优异的韧性和足够的粘合力，对基材和Co中的其它碳化物的含量和硬质合金颗粒的尺寸没有任何限制，本发明提供了一种金刚石薄膜涂覆的切削工具，其包括在硬质合金基体上形成硬质合金颗粒的表面层异常生长，在表面层上形成的金刚石膜，以及金刚石薄膜涂层切削工具的制造方法，其特征在于，包括以下步骤：在脱碳气氛下直到表面变为η相，在渗碳气氛下对表面脱碳硬质合金基体进行热处理，在硬质合金基体的渗碳表面上沉积金刚石膜。

5. 发明授权

US08334027B2 Method for DC plasma assisted chemical vapor deposition in the absence of a positive column 有权
标题翻译：在没有正性柱的情况下进行直流等离子体辅助化学气相沉积的方法
公开(公告)号：US08334027B2
公开(公告)日：2012-12-18
申请号：US11833679
申请日：2007-08-03
申请人： Wook-Seong Lee , Young-Joon Baik , Jeung-Hyun Jeong , Ki-Woong Chae
发明人： Wook-Seong Lee , Young-Joon Baik , Jeung-Hyun Jeong , Ki-Woong Chae
IPC分类号： H05H1/24
CPC分类号： C23C16/503 , C23C16/272 , Y10T428/268
摘要： In the method for depositing a material in the absence of a positive column, a discharge is generated between a cathode and an anode disposed to face each other in a reaction chamber by applying a DC voltage therebetween, and introducing reaction gas into the reaction chamber, thereby depositing a material on a substrate mounted on the anode and serving as a part of the anode, wherein the deposition of the material on the substrate is performed under a state that a cathode glow and an anode glow exist in a form of thin layers coating respectively the surfaces of the cathode and the substrate, while a positive column does not exist or is so small as to be negligible.
摘要翻译：在不存在正极柱时沉积材料的方法中，通过在反应室中施加直流电压，在反应室内彼此面对的阴极和阳极之间产生放电，并将反应气体引入反应室，从而将材料沉积在安装在阳极上并用作阳极的一部分的衬底上，其中材料在衬底上的沉积在阴极辉光和阳极辉光以薄层涂层形式存在的状态下进行分别是阴极和衬底的表面，而正柱不存在或太小以致可以忽略。

6. 发明申请

US20080280135A1 DC PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION APPARATUS IN THE ABSENCE OF POSITIVE COLUMN, METHOD FOR DEPOSITING MATERIAL IN THE ABSENCE OF POSITIVE COLUMN, AND DIAMOND THIN LAYER THEREBY 有权
标题翻译：直流等离子体辅助化学气相沉积装置在正极柱的存在下，沉积材料在正极柱和金刚石薄层中的沉积方法
公开(公告)号：US20080280135A1
公开(公告)日：2008-11-13
申请号：US11833679
申请日：2007-08-03
申请人： Wook-Seong Lee , Young-Joon Baik , Jeung-Hyun Jeong , Ki-Woong Chae
发明人： Wook-Seong Lee , Young-Joon Baik , Jeung-Hyun Jeong , Ki-Woong Chae
IPC分类号： B01J3/06 , H05H1/24
CPC分类号： C23C16/503 , C23C16/272 , Y10T428/268
摘要： Disclosed are DC plasma assisted chemical vapor deposition (DC PA-CVD) apparatus operable in the absence of a positive column, a method for depositing a material by DC PA-CVD in the absence of a positive column, and a diamond thin film fabricated thereby. In the method for depositing a material in the absence of a positive column, a discharge is generated between a cathode and an anode disposed to face each other in a reaction chamber by applying a DC voltage therebetween, and introducing reaction gas into the reaction chamber, thereby depositing a material on a substrate mounted on the anode and serving as a part of the anode, wherein the deposition of the material on the substrate is performed under a state that a cathode glow and an anode glow exist in a form of thin layers coating respectively the surfaces of the cathode and the substrate, while a positive column does not exist or is so small as to be negligible. The diamond thin film fabricated by the method is uniform, contains no impurity, and has excellent crystallinity.
摘要翻译：公开了在没有正极柱的情况下可操作的DC等离子体辅助化学气相沉积（DC PA-CVD）装置，在不存在正极柱的情况下通过DCPA-CVD沉积材料的方法和由其制造的金刚石薄膜。在不存在正极柱时沉积材料的方法中，通过在反应室中施加直流电压，在反应室内彼此面对的阴极和阳极之间产生放电，并将反应气体引入反应室，从而将材料沉积在安装在阳极上并用作阳极的一部分的衬底上，其中材料在衬底上的沉积在阴极辉光和阳极辉光以薄层涂层形式存在的状态下进行分别是阴极和衬底的表面，而正柱不存在或太小以致可以忽略。通过该方法制造的金刚石薄膜是均匀的，不含杂质，并具有优异的结晶度。

7. 发明授权

US5700518A Fabrication method for diamond-coated cemented carbide cutting tool 失效
标题翻译：金刚石涂层硬质合金切削工具的制造方法
公开(公告)号：US5700518A
公开(公告)日：1997-12-23
申请号：US712707
申请日：1996-09-12
申请人： Wook-Seong Lee , Young-Joon Baik , Kwang Yong Eun
发明人： Wook-Seong Lee , Young-Joon Baik , Kwang Yong Eun
IPC分类号： C23C16/02 , C23C16/27 , C25F3/02 , C23C16/26 , B05D3/10
CPC分类号： C23C16/0227 , C23C16/27 , C25F3/02 , Y10T407/27
摘要： A fabrication method for a diamond-coated cemented carbide cutting tool includes electrolytically etching the surface of a cemented carbide cutting tool with a NaOH or KOH aqueous solution or chemically etching the surface of the cemented carbide cutting tool with a KMnO.sub.4 +KOH aqueous solution, and depositing a diamond film on the cemented carbide cutting tool. A stronger etching effect than by using a Murakami solution can be achieved, and no poisonous material is included in the etchant. In addition, disposal of the waste etchant is made simpler, and the adhesion between the diamond film coating and the cemented carbide cutting tool can be strengthened.
摘要翻译：金刚石涂层硬质合金切削工具的制造方法包括用NaOH或KOH水溶液电解蚀刻硬质合金切削工具的表面，或用KMnO 4 + KOH水溶液化学蚀刻硬质合金刀具的表面，以及在硬质合金切削工具上沉积金刚石膜。可以实现比通过使用村上解决方案更强的蚀刻效果，并且蚀刻剂中不包含有毒材料。此外，使废弃蚀刻剂的处理变得更简单，并且可以加强金刚石膜涂层和硬质合金切削工具之间的粘附。

8. 发明授权

US09200363B2 AA' stacked graphite and fabrication method thereof 有权
标题翻译： AA'堆石墨及其制造方法
公开(公告)号：US09200363B2
公开(公告)日：2015-12-01
申请号：US12512942
申请日：2009-07-30
申请人： Jae-Kap Lee , So-Hyung Lee , Jae-Pyoung Ahn , Seung-Cheol Lee , Wook-Seong Lee
发明人： Jae-Kap Lee , So-Hyung Lee , Jae-Pyoung Ahn , Seung-Cheol Lee , Wook-Seong Lee
IPC分类号： C01B31/04 , C23C16/26 , B82Y30/00
CPC分类号： C23C16/26 , B82Y30/00 , C01B32/20 , C01P2002/78 , Y10T428/13 , Y10T428/261 , Y10T428/298 , Y10T428/2982
摘要： Disclosed is AA′ graphite with a new stacking feature of graphene, and a fabrication method thereof. Graphene is stacked in the sequence of AA′ where alternate graphene layers exhibiting the AA′ stacking are translated by a half hexagon (1.23 Å). AA′ graphite has an interplanar spacing of about 3.44 Å larger than that of the conventional AB stacked graphite (3.35 Å) that has been known as the only crystal of pure graphite. This may allow the AA′ stacked graphite to have unique physical and chemical characteristics.
摘要翻译：公开了具有石墨烯的新堆叠特征的AA'石墨及其制造方法。石墨烯以AA'的顺序堆叠，其中呈现AA'层叠的交替石墨烯层被半六边形（1.23）平移。 AA'石墨具有比已知为纯石墨的唯一晶体的常规AB堆叠石墨（3.35埃）的面间距大约3.44埃。这可能使AA的堆积石墨具有独特的物理和化学特性。

9. 发明授权

US08597607B2 Method for preparing graphene ribbons 有权
标题翻译：制备石墨烯带的方法
公开(公告)号：US08597607B2
公开(公告)日：2013-12-03
申请号：US12545740
申请日：2009-08-21
申请人： Jae-Kap Lee , So-Hyung Lee , Wook-Seong Lee
发明人： Jae-Kap Lee , So-Hyung Lee , Wook-Seong Lee
IPC分类号： C09C1/44
CPC分类号： C09C1/44 , B82Y30/00 , B82Y40/00 , C01B32/184 , C01B32/19 , C01B2204/04 , C01B2204/06 , C01P2002/77
摘要： Disclosed is a method for fabricating graphene ribbons, comprising: preparing a graphitic material comprising stacked graphene helices; and cutting the graphitic material in a short form by applying energy to the graphitic material; and simultaneously or afterward, decomposing the graphitic material into short graphene ribbons. This method provides a mass production route to graphene ribbons.
摘要翻译：公开了一种制造石墨烯带的方法，包括：制备包括堆积的石墨烯螺旋的石墨材料; 并通过向石墨材料施加能量来以短形式切割石墨材料; 同时或之后，将石墨材料分解成短的石墨烯带。这种方法提供了石墨烯带的大规模生产路线。

10. 发明授权

US08318268B2 AA stacked graphene-diamond hybrid material by high temperature treatment of diamond and the fabrication method thereof 有权
标题翻译：通过金刚石高温处理的AA叠层石墨烯 - 金刚石混合材料及其制造方法
公开(公告)号：US08318268B2
公开(公告)日：2012-11-27
申请号：US13316634
申请日：2011-12-12
申请人： Jae-Kap Lee , So-Hyung Lee , Seung-Cheol Lee , Jae-Pyoung Ahn , Jeon-Kook Lee , Wook-Seong Lee
发明人： Jae-Kap Lee , So-Hyung Lee , Seung-Cheol Lee , Jae-Pyoung Ahn , Jeon-Kook Lee , Wook-Seong Lee
IPC分类号： C23C16/00
CPC分类号： B01J3/006 , B01J19/088 , B01J2219/0809 , B01J2219/0879 , B01J2219/0894 , C01B32/20 , C01B32/25 , C01B32/28 , C30B29/04 , C30B33/02 , Y10T428/30
摘要： There is provided a fabrication method for an AA stacked graphene-diamond hybrid material by converting, through a high temperature treatment on diamond, a diamond surface into graphene. According to the present invention, if various types of diamond are maintained at a certain temperature having a stable graphene phase (approximately greater than 1200° C.) in a hydrogen gas atmosphere, two diamond {111} lattice planes are converted into one graphene plate (2:1 conversion), whereby the diamond surface is converted into graphene in a certain thickness, thus to fabricate the AA stacked graphene-diamond hybrid material.
摘要翻译：通过将金刚石上的高温处理，金刚石表面转化成石墨烯，提供了一种用于AA堆叠的石墨烯 - 金刚石混合材料的制造方法。根据本发明，如果各种类型的金刚石在氢气气氛中保持在稳定的石墨烯相（大约大于1200℃）的一定温度下，则将两个菱形{111}晶格面转换为一个石墨烯板（2:1转化），由此将金刚石表面转化成一定厚度的石墨烯，从而制造AA堆叠的石墨烯 - 金刚石混合材料。

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