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1. 发明授权

US06786176B2 Diamond film depositing apparatus and method thereof 失效
标题翻译：金刚石膜沉积设备及其方法
公开(公告)号：US06786176B2
公开(公告)日：2004-09-07
申请号：US10122459
申请日：2002-04-15
申请人： Wook-Seong Lee , Young Joon Baik , Kwang Yong Eun
发明人： Wook-Seong Lee , Young Joon Baik , Kwang Yong Eun
IPC分类号： C23C1600
CPC分类号： H01J37/32027 , H01J37/32009 , H01J37/32541
摘要： A diamond film depositing apparatus and method are disclosed in which a uniform and large plasma is formed on a substrate having a diameter of larger than 100 mm without using a heated filament cathode, without applying a magnetic field thereto, and without using a ballast resistance. The thusly formed plasma is maintained stably for a long time, so that a diamond thick film having a diameter of larger than 4 inches and a thickness of over hundreds of &mgr;m can be deposited on a flat or curved substrate and also on a Si wafer.
摘要翻译：公开了一种金刚石膜沉积设备和方法，其中在不使用加热的灯丝阴极的情况下，在直径大于100mm的基板上形成均匀且大的等离子体，而不对其施加磁场，并且不使用耐镇流性。这样形成的等离子体长时间保持稳定，使得直径大于4英寸，厚度超过数百个的金刚石厚膜可以沉积在平坦或弯曲的基板上以及Si晶片上。

2. 发明授权

US5700518A Fabrication method for diamond-coated cemented carbide cutting tool 失效
标题翻译：金刚石涂层硬质合金切削工具的制造方法
公开(公告)号：US5700518A
公开(公告)日：1997-12-23
申请号：US712707
申请日：1996-09-12
申请人： Wook-Seong Lee , Young-Joon Baik , Kwang Yong Eun
发明人： Wook-Seong Lee , Young-Joon Baik , Kwang Yong Eun
IPC分类号： C23C16/02 , C23C16/27 , C25F3/02 , C23C16/26 , B05D3/10
CPC分类号： C23C16/0227 , C23C16/27 , C25F3/02 , Y10T407/27
摘要： A fabrication method for a diamond-coated cemented carbide cutting tool includes electrolytically etching the surface of a cemented carbide cutting tool with a NaOH or KOH aqueous solution or chemically etching the surface of the cemented carbide cutting tool with a KMnO.sub.4 +KOH aqueous solution, and depositing a diamond film on the cemented carbide cutting tool. A stronger etching effect than by using a Murakami solution can be achieved, and no poisonous material is included in the etchant. In addition, disposal of the waste etchant is made simpler, and the adhesion between the diamond film coating and the cemented carbide cutting tool can be strengthened.
摘要翻译：金刚石涂层硬质合金切削工具的制造方法包括用NaOH或KOH水溶液电解蚀刻硬质合金切削工具的表面，或用KMnO 4 + KOH水溶液化学蚀刻硬质合金刀具的表面，以及在硬质合金切削工具上沉积金刚石膜。可以实现比通过使用村上解决方案更强的蚀刻效果，并且蚀刻剂中不包含有毒材料。此外，使废弃蚀刻剂的处理变得更简单，并且可以加强金刚石膜涂层和硬质合金切削工具之间的粘附。

3. 发明授权

US06399151B2 Diamond film depositing apparatus and method thereof 失效
公开(公告)号：US06399151B2
公开(公告)日：2002-06-04
申请号：US09427897
申请日：1999-10-27
申请人： Wook-Seong Lee , Young Joon Baik , Kwang Yong Eun
发明人： Wook-Seong Lee , Young Joon Baik , Kwang Yong Eun
IPC分类号： C23C1627
CPC分类号： H01J37/32027 , H01J37/32009 , H01J37/32541
摘要： A diamond film depositing apparatus and method are disclosed in which a uniform and large plasma is formed on a substrate having a diameter of larger than 100 mm without using a heated filament cathode, without applying a magnetic field thereto, and without using a ballast resistance. The thusly formed plasma is maintained stably for a long time, so that a diamond thick film having a diameter of larger than 4 inches and a thickness of over hundreds of &mgr;m can be deposited on a flat or curved substrate and also on a Si wafer.

4. 发明授权

US06365230B1 Method of manufacturing a diamond film coated cutting tool 有权
标题翻译：金刚石薄膜涂层切割工具的制造方法
公开(公告)号：US06365230B1
公开(公告)日：2002-04-02
申请号：US09459026
申请日：1999-12-10
申请人： Young Joon Baik , Wook-Seong Lee , Kwang Yong Eun , Ki Woong Chae
发明人： Young Joon Baik , Wook-Seong Lee , Kwang Yong Eun , Ki Woong Chae
IPC分类号： C23C1627
CPC分类号： C23C14/044 , C23C16/0209 , C23C16/0254 , C23C16/27 , Y10T428/30
摘要： In order to provide an excellent toughness and a sufficient adhesive force without any limit in the content of other carbides in the substrate material and Co and in the size of the cemented carbides grains, the present invention provides a diamond film coated cutting tool, comprising a surface layer which cemented carbide grains are grown abnormally on the cemented carbide substrate, and a diamond film formed on the surface layer, and also a method for manufacturing a diamond film coated cutting tool, comprising the steps of heat-treating a surface of a cemented carbide substrate under a decarburizing atmosphere until the surface changes to a &eegr; phase, heat-treating the surface-decarburized cemented carbide substrate under a carburized atmosphere, depositing a diamond film on the carburized surface of the cemented carbide substrate.
摘要翻译：为了提供优异的韧性和足够的粘合力，对基材和Co中的其它碳化物的含量和硬质合金颗粒的尺寸没有任何限制，本发明提供了一种金刚石薄膜涂覆的切削工具，其包括在硬质合金基体上形成硬质合金颗粒的表面层异常生长，在表面层上形成的金刚石膜，以及金刚石薄膜涂层切削工具的制造方法，其特征在于，包括以下步骤：在脱碳气氛下直到表面变为η相，在渗碳气氛下对表面脱碳硬质合金基体进行热处理，在硬质合金基体的渗碳表面上沉积金刚石膜。

5. 发明授权

US06443092B1 Apparatus for synthesizing diamond film by DC PACVD 失效
标题翻译：用于通过DC PACVD合成金刚石膜的装置
公开(公告)号：US06443092B1
公开(公告)日：2002-09-03
申请号：US09563481
申请日：2000-05-02
申请人： Jae-Kap Lee , Young Joon Baik , Kwang Yong Eun
发明人： Jae-Kap Lee , Young Joon Baik , Kwang Yong Eun
IPC分类号： C23C1600
CPC分类号： C23C16/272 , C23C16/503 , H01J37/32009 , H01J37/32541
摘要： The present invention relates to a diamond film synthesizing apparatus, and in particular to an apparatus for increasing the deposition area to several inches in diameter by using multiple cathodes (Multi-cathode DC PACVD). In the multi-cathode DC PACVD apparatus according to the present invention, the basic array of the cathodes is determined so that the uniformity of diamond films on a deposition area is maximized. A seven-cathode structure, in which six cathodes are radially arranged at the same distance of 43 mm surrounding one central cathode, in which a basic unit of the array is regular triangle, is designed for depositing uniform diamond films on a 4″ substrate. Here, the shape of six edge cathodes is rod of which the lateral face is joined to the connecting rod, so that non-uniformity of temperature in the edge cathode is minimized and then the reliability of the apparatus is much enhanced. The multi(7)-cathode DC PACVD apparatus enables one to deposit 4″ diamond films with a thickness uniformity of 3.8% thicker than 1 mm. The unit of the cathode array according to the present invention can be adapted when increasing the deposition area to 8 inches, 12 inches, etc.
摘要翻译：本发明涉及一种金刚石膜合成装置，特别涉及通过使用多个阴极（多阴极DC PACVD）将沉积面积增加到几英寸直径的装置。在根据本发明的多阴极DC PACVD装置中，阴极的基本阵列被确定为使得沉积区域上的金刚石膜的均匀性最大化。七阴极结构，其中六个阴极以围绕一个中心阴极的43mm的相同距离径向布置，其中阵列的基本单元为正三角形，被设计用于在4“衬底上沉积均匀的金刚石膜。这里，六边形阴极的形状是将侧面与连接杆接合的杆，使得边缘阴极的温度不均匀化最小化，从而大大提高了装置的可靠性。多（7） - 阴极DC PACVD装置使得能够沉积4“的金刚石膜，厚度均匀度比1mm厚3.8％。当将沉积区域增加到8英寸，12英寸等时，根据本发明的阴极阵列的单元可以被适配

6. 发明授权

US06319439B1 Method of synthesizing even diamond film without cracks 失效
标题翻译：偶合金刚石薄膜无裂纹的方法
公开(公告)号：US06319439B1
公开(公告)日：2001-11-20
申请号：US09513319
申请日：2000-02-25
申请人： Jae-Kap Lee , Young Joon Baik , Kwang Yong Eun
发明人： Jae-Kap Lee , Young Joon Baik , Kwang Yong Eun
IPC分类号： C30B2500
CPC分类号： C23C16/272 , C23C16/27 , C30B25/105 , C30B29/04
摘要： A method of synthesizing an even free-standing diamond film without growth cracks is disclosed. The intrinsic tensile stress of a diamond film is compensated by an artificial compressive stress with a step down control of the deposition temperature during deposition. After a diamond film is deposited with a predetermined thickness at a deposition temperature, the deposition temperature is decreased in multiple steps during the deposition. The bending of the diamond wafer is minimized by using a tungsten substrate with higher elastic modulus than molybdenum.
摘要翻译：公开了一种合成均匀自立金刚石膜而没有生长裂纹的方法。金刚石膜的固有拉伸应力通过人造压缩应力补偿，同时降低沉积期间沉积温度的控制。在沉积温度下以预定厚度沉积金刚石膜之后，在沉积期间沉积温度以多个步骤降低。通过使用具有比钼更高的弹性模量的钨基材，使金刚石晶片的弯曲最小化。

7. 发明授权

US5916005A High curvature diamond field emitter tip fabrication method 失效
标题翻译：高曲率金刚石场发射极尖端制造方法
公开(公告)号：US5916005A
公开(公告)日：1999-06-29
申请号：US791872
申请日：1997-01-31
申请人： Young-Joon Baik , Kwang Yong Eun
发明人： Young-Joon Baik , Kwang Yong Eun
IPC分类号： H01J17/49 , H01J9/02 , H01J1/30
CPC分类号： H01J9/025 , H01J2201/30457
摘要： A high curvature diamond field emitter tip fabrication method includes forming on a substrate a diamond film composed of square (100) phase-oriented facets and (111) phase-oriented facets distributed thereabout and columnar diamond particles having defect density differences between the diamond formed beneath the (100) and (111) diamond growth facets, and etching the diamond film using a oxygen-containing gas plasma. Further, the method includes forming on a substrate a diamond film composed of square (100) facets and (111) facets distributed thereabout and columnar diamond particles having defect density differences between the diamond formed beneath the (100) and (111) diamond growth facets, forming a supporting film on the diamond film, removing the substrate therefrom, and etching the diamond film using an oxygen-containing gas plasma after any one of the previously described steps.
摘要翻译：高曲率金刚石场发射极尖端制造方法包括在基底上形成金刚石膜，该金刚石膜由正方形（100）定向面和（111）分布在其周围的相位取向面形成，并且在下面形成的金刚石之间具有缺陷密度差的柱状金刚石颗粒（100）和（111）金刚石生长面，并使用含氧气体等离子体蚀刻金刚石膜。此外，该方法包括在基底上形成金刚石膜，该金刚石膜由方形（100）面和分布在其周围的（111）面形成，并且在（100）和（111）金刚石生长面之下形成的金刚石之间具有缺陷密度差的柱状金刚石颗粒在金刚石膜上形成支撑膜，从其上除去基板，并且在前述步骤中的任何一个之后使用含氧气体等离子体蚀刻金刚石膜。

8. 发明授权

US5647964A Diamond film synthesizing apparatus and method thereof using direct current glow discharge plasma enhanced chemical vapor deposition 失效
标题翻译：金刚石膜合成装置及其使用直流辉光放电等离子体增强化学气相沉积的方法
公开(公告)号：US5647964A
公开(公告)日：1997-07-15
申请号：US458761
申请日：1995-06-02
申请人： Jae-Kap Lee , Young-Joon Baik , Kwang Yong Eun
发明人： Jae-Kap Lee , Young-Joon Baik , Kwang Yong Eun
IPC分类号： C23C16/27 , C23C16/503 , H01J37/32 , C23C14/00
CPC分类号： C23C16/272 , C23C16/503 , H01J37/32018 , H01J37/32027 , H01J37/3244 , H01J37/32724
摘要： An improved diamond film synthesizing apparatus and a method thereof using a direct current glow discharge plasma enhanced chemical vapor deposition advantageously providing a plurality of cathodes for forming a relatively large plasma size, which includes a reactor having an upper wall and a bottom wall; a plurality of spaced apart cathode holders half inserted into the upper wall of the reactor, arranged in a triangle when looking dowawardly over the head of the reactor; a plurality of cathode connecting rods, each of which is threadly connected to the cathode holders inside the reactor, respectively; a plurality of cathodes, each of which is threadly connected to the cathode connecting rods, respectively; an anode half inserted into the bottom wall of the reactor and having a substrate attached on the top thereof, whereby all the cathodes and the anodes are spaced apart inside the reactor by a predetermined distance; and a gas supplier connected to one side wall of the reactor having a circular gas supplying tube having a plurality of holes for injecting gas into the reactor. In addition, the diamond film synthesizing method using a direct current glow discharge plasma enhanced chemical vapor deposition comprises the methods of cutting off the heat transfer from a cathode to a cathode holder, thereby maintaining the temperature of a cathode to be within a predetermined range for a stable production of a plasma.
摘要翻译：改进的金刚石膜合成装置及其使用直流辉光放电等离子体增强化学气相沉积的方法有利地提供用于形成较大等离子体尺寸的多个阴极，其包括具有上壁和底壁的反应器; 多个间隔开的阴极保持器，一半插入反应器的上壁，当在反应堆的头部上倾斜时布置成三角形; 多个阴极连接杆，分别与反应器内部的阴极保持器螺纹连接; 多个阴极，每个阴极分别与阴极连接杆螺纹连接; 阳极半部插入反应器的底壁并且具有附接在其顶部上的基板，由此所有阴极和阳极在反应器内部隔开预定距离; 连接到反应器的一个侧壁的气体供应器具有环形气体供给管，该圆形气体供给管具有用于将气体注入反应器的多个孔。此外，使用直流辉光放电等离子体增强化学气相沉积的金刚石膜合成方法包括切断从阴极到阴极保持器的热传递的方法，从而将阴极的温度保持在预定范围内稳定地生产等离子体。

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