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1. 发明申请

US20100175734A1 Thermoelectric nanowire and method of manufacturing the same 审中-公开
标题翻译：热电纳米线及其制造方法
公开(公告)号：US20100175734A1
公开(公告)日：2010-07-15
申请号：US12657084
申请日：2010-01-13
申请人： Woo Young Lee , Jin Hee Ham , Seung Hyun Lee , Jong Wook Roh , Hyun Su Kim , Woo Chul Kim
发明人： Woo Young Lee , Jin Hee Ham , Seung Hyun Lee , Jong Wook Roh , Hyun Su Kim , Woo Chul Kim
IPC分类号： H01L35/16 , B05D5/12 , B32B15/02
CPC分类号： H01L35/16 , B82Y30/00 , B82Y40/00 , C30B1/12 , C30B29/02 , C30B29/52 , C30B29/60 , H01L35/34 , Y10T428/12097
摘要： A thermoelectric nanowire and a method of manufacturing the same, in which an oxide layer and a thermoelectric material layer, both of which have different thermal expansion coefficients, are stacked on a substrate, and a single crystal thermoelectric nanowire is grown from a thermoelectric material using the compressive stress caused by the difference between the thermal expansion coefficients. The method includes preparing a substrate on which an oxide layer is formed, forming a plurality of nanoparticles, each of which includes aluminum (Al), silver (Ag), iron (Fe) or oxides thereof, on the oxide layer, forming a thermoelectric material thin film, which has thermoelectric properties, above the oxide layer so as to include the nanoparticles formed on the oxide layer, heat-treating the substrate having the thermoelectric material thin film to grow the thermoelectric nanowire containing the nanoparticles, and cooling the substrate at room temperature after the heat-treatment.
摘要翻译：热电纳米线及其制造方法，其中具有不同热膨胀系数的氧化物层和热电材料层堆叠在基板上，并且单晶热电纳米线由热电材料生长，使用由压缩应力引起的热膨胀系数之差。该方法包括制备其上形成有氧化物层的基板，在氧化物层上形成多个纳米颗粒，每个纳米颗粒包括铝（Al），银（Ag），铁（Fe）或氧化物），形成热电具有热电性质的材料薄膜，以包含形成在氧化物层上的纳米颗粒，对具有热电材料薄膜的基板进行热处理，以生长含有纳米颗粒的热电纳米线，并将基板冷却热处理后的室温。

2. 发明申请

US20100221894A1 METHOD FOR MANUFACTURING NANOWIRES BY USING A STRESS-INDUCED GROWTH 审中-公开
标题翻译：使用应力诱导生长制造纳米微粒的方法
公开(公告)号：US20100221894A1
公开(公告)日：2010-09-02
申请号：US12064861
申请日：2006-12-28
申请人： Woo Young Lee , Jin Hee Ham , Woo Young Shim , Jong Wook Roh , Seung Hyun Lee , Kye Jin Jeong
发明人： Woo Young Lee , Jin Hee Ham , Woo Young Shim , Jong Wook Roh , Seung Hyun Lee , Kye Jin Jeong
IPC分类号： H01L21/20
CPC分类号： C23C14/14 , B82Y30/00 , B82Y40/00 , C30B1/12 , C30B29/02 , C30B29/60
摘要： Provided is a method for manufacturing a nanowire using stress-induced growth. The method includes: providing a substrate with an intermediate layer formed thereon; forming thin film on the intermediate layer, wherein the thin film made of material having more than 2×10−6/° C. of thermal expansion coefficient difference from the intermediate layer; inducing tensile stress due to the thermal expansion coefficient difference between the thin film and the substrate by performing a heat treatment on the substrate with the thin film formed; and growing single-crystalline nanowire of the material by inducing compressive stress at the thin film through cooling of the substrate.
摘要翻译：提供了使用应力诱导生长制造纳米线的方法。该方法包括：向基板提供其上形成的中间层; 在中间层上形成薄膜，其中由与中间层的热膨胀系数差大于2×10 -6 /℃的材料制成的薄膜; 通过对形成有薄膜的基板进行热处理，引起由于薄膜和基板之间的热膨胀系数差引起的拉伸应力; 并通过冷却衬底在薄膜处诱导压应力来增长材料的单晶纳米线。

3. 发明申请

US20140342488A1 Preparation Method of Manufacturing Thermoelectric Nanowires Having Core/Shell Structure 审中-公开
标题翻译：制造具有核/壳结构的热电纳米线的制备方法
公开(公告)号：US20140342488A1
公开(公告)日：2014-11-20
申请号：US14360004
申请日：2012-04-05
申请人： Woo Young Lee , Joo Hoon Kang , Jong Wook Roh , Woo Young Shim
发明人： Woo Young Lee , Joo Hoon Kang , Jong Wook Roh , Woo Young Shim
IPC分类号： H01L35/34 , H01L35/04 , H01L35/16 , H01L35/18 , C30B1/04 , C30B23/08
CPC分类号： H01L35/34 , C23C14/06 , C23C14/223 , C30B1/04 , C30B23/00 , C30B23/08 , C30B29/02 , C30B29/60 , H01L35/04 , H01L35/16 , H01L35/18
摘要： Disclosed is a preparation method of manufacturing a thermoelectric nanowire having a core/shell structure. The preparation method of thermoelectric nanowire includes preparing a substrate provided with an oxide layer formed thereon, and forming a Bi thin film on the oxide layer, heat treating a structure produced during forming the Bi thin film to induce compressive stress due to differences in coefficients of thermal expansion between the substrate, the oxide layer and the Bi thin film, to grow a Bi single crystal nanowire on the Bi thin film, and cooling the substrate of a structure on which the nanowire is grown to a low temperature, and sputtering a thermoelectric material on the Bi single crystal nanowire in a cooled state to manufacture a thermoelectric nanowire having a core/shell structure of Bi/thermoelectric material.
摘要翻译：公开了一种具有核/壳结构的热电纳米线的制备方法。热电纳米线的制备方法包括制备在其上形成有氧化物层的基板，并在氧化物层上形成Bi薄膜，热处理在形成Bi薄膜期间产生的结构，以由于系数差异而产生压缩应力基板，氧化物层和Bi薄膜之间的热膨胀，在Bi薄膜上生长Bi单晶纳米线，并将其上生长纳米线的结构的衬底冷却至低温，并溅射热电材料在Bi单晶纳米线处于冷却状态，以制造具有Bi /热电材料的核/壳结构的热电纳米线。

4. 发明授权

US07063986B2 Room temperature ferromagnetic semiconductor grown by plasma enhanced molecular beam epitaxy and ferromagnetic semiconductor based device 失效
标题翻译：通过等离子体增强分子束外延和基于铁磁半导体的器件生长的室温铁磁半导体
公开(公告)号：US07063986B2
公开(公告)日：2006-06-20
申请号：US10910745
申请日：2004-08-03
申请人： Woo Young Lee , Suk Hee Han , Joon Yeon Chang , Hi Jung Kim , Jung Mi Lee , Jae Min Myoung
发明人： Woo Young Lee , Suk Hee Han , Joon Yeon Chang , Hi Jung Kim , Jung Mi Lee , Jae Min Myoung
IPC分类号： H01L21/302
CPC分类号： B82Y25/00 , B82Y40/00 , H01F1/404 , H01F10/193 , H01F10/3213 , H01F41/30 , H01L21/0242 , H01L21/0254 , H01L21/02543 , H01L21/02573 , H01L21/02581 , H01L21/0262 , H01L21/02631 , H01L29/66984 , H01L33/40 , H01L43/08 , H01L43/10
摘要： A 3 group–5 group compound ferromagnetic semiconductor, comprising one material ‘A’ selected from the group of Ga, Al and In and one material ‘B’ selected from the group consisting of N and P, wherein one material ‘C’ selected from the group consisting of Mn, Mg, Co, Fe, Ni, Cr and V is doped as a material for substituting the material ‘A’, the compound semiconductor has a single phase as a whole. The ferromagnetic semiconductor can be fabricated by a plasma-enhance molecular beam epitaxy growing method and since it shows the ferromagnetic characteristics at a room temperature, it can be applied as various spin electron devices.
摘要翻译：包含选自Ga，Al和In的一种材料“A”和选自N和P的一种材料“B”的3组5族化合物铁磁半导体，其中一种选自掺杂有Mn，Mg，Co，Fe，Ni，Cr和V的组合作为材料“A”的材料被掺杂，化合物半导体整体上具有单相。铁磁半导体可以通过等离子体增强分子束外延生长方法制造，并且由于其显示室温下的铁磁特性，因此可以用作各种自旋电子器件。

5. 发明授权

US09503838B2 Method and system for communicating between devices 有权
标题翻译：用于设备之间通信的方法和系统
公开(公告)号：US09503838B2
公开(公告)日：2016-11-22
申请号：US14241430
申请日：2012-08-29
申请人： Sung Geun Jin , Jin Kyeong Kim , Woo Young Lee , Ki Chul Han , Hyun Kyu Chung , Byung Jae Kwak
发明人： Sung Geun Jin , Jin Kyeong Kim , Woo Young Lee , Ki Chul Han , Hyun Kyu Chung , Byung Jae Kwak
IPC分类号： H04B5/00 , G06F3/044 , H04W4/00 , G06F13/38
CPC分类号： H04W4/008 , G06F3/044 , G06F13/382 , H04W4/80
摘要： A method and system for communicating between devices according to the present invention are provided. The method for communicating between the devices according to the present invention is used for communicating with a first terminal, and is carried out in a device having a capacitive touch screen. The method includes: detecting a change in capacitance for a specific part of the capacitive touch screen, which occurs by means of the first terminal; and acquiring information transferred from the first terminal on the basis of the detected change in capacitance of the capacitive touch screen. The communicating method using such a touch screen may be easily used for various services such as authenticating terminals or transferring files between local terminals.
摘要翻译：提供了根据本发明的用于在设备之间进行通信的方法和系统。根据本发明的设备之间的通信方法用于与第一终端进行通信，并且在具有电容式触摸屏的设备中进行。该方法包括：通过第一终端检测电容式触摸屏的特定部分的电容变化; 并且基于检测到的电容式触摸屏的电容变化来获取从第一终端传送的信息。使用这样的触摸屏的通信方法可以容易地用于各种服务，例如认证终端或在本地终端之间传送文件。

6. 发明申请

US20140205841A1 GRANULES OF GRAPHENE OXIDE BY SPRAY DRYING 审中-公开
标题翻译：通过喷雾干燥形成石墨氧化物颗粒
公开(公告)号：US20140205841A1
公开(公告)日：2014-07-24
申请号：US14156070
申请日：2014-01-15
申请人： Hongwei Qiu , Thomas A. Bechtold , Lihn Tung Le , Woo Young Lee
发明人： Hongwei Qiu , Thomas A. Bechtold , Lihn Tung Le , Woo Young Lee
IPC分类号： C01B31/04
CPC分类号： C01B32/23 , C01B32/184 , H01G11/36 , Y02E60/13 , Y10T428/2982
摘要： Granules of graphene oxide may be produced from a dispersion of nanoscale graphene oxide sheets by a spray drying method. Such granules have a three-dimensional corrugated morphology. The complexity of the corrugations, and the size distribution of the granules can be varied through selection of the spray-drying equipment used, and variation of the composition of the dispersion and the spray-drying parameters. Structural modifiers may be included in the graphene oxide dispersion to control the ultimate morphology of the granules. The granules of graphene oxide may be thermally reduced at a moderate temperature of 220° C. to increase the granules' electrical conductivity. The reduced granules may be used to fabricate electrodes for supercapacitors. The power and energy density of such an electrode material is comparable to those of conventional/commercial activated carbon-based electrodes.
摘要翻译：氧化石墨烯的颗粒可以通过喷雾干燥法从纳米级石墨烯氧化物片的分散体制备。这种颗粒具有三维波纹形态。波纹的复杂性和颗粒的尺寸分布可以通过选择所使用的喷雾干燥设备以及分散体的组成和喷雾干燥参数的变化来改变。结构改性剂可以包括在氧化石墨烯分散体中以控制颗粒的最终形态。氧化石墨烯的颗粒可以在220℃的中等温度下热还原，以增加颗粒的导电性。还原颗粒可用于制造超级电容器的电极。这种电极材料的功率和能量密度与常规/商业活性炭基电极的功率和能量密度相当。

7. 发明授权

US08749299B2 Semiconductor device generating varied internal voltages 有权
标题翻译：产生不同内部电压的半导体器件
公开(公告)号：US08749299B2
公开(公告)日：2014-06-10
申请号：US12205975
申请日：2008-09-08
申请人： Dong Hoon Han , Woo Young Lee
发明人： Dong Hoon Han , Woo Young Lee
IPC分类号： G05F1/10 , H02M3/07
CPC分类号： H02M3/073 , G05F1/465
摘要： The present invention describes a semiconductor device that generates internal voltages having different levels using an external voltage. The semiconductor device includes a plurality of asynchronous internal voltage generating circuits that share an external voltage source and generate internal voltages having different levels from one another. The plurality of asynchronous internal voltage generating circuits maintain the levels of the internal voltages at target levels by using the external voltage at different time points, respectively. The semiconductor device minimizes noise in the external voltage according to the use of the internal voltages.
摘要翻译：本发明描述了使用外部电压产生具有不同电平的内部电压的半导体器件。半导体器件包括多个异步内部电压产生电路，其共享外部电压源并产生彼此具有不同电平的内部电压。多个异步内部电压产生电路通过分别在不同时间点使用外部电压来将内部电压的电平分别保持在目标电平。根据内部电压的使用，半导体器件使外部电压的噪声最小化。

8. 发明授权

US07499376B2 System and method for position awareness for minimizing power consumption in sensor network environment 失效
标题翻译：用于定位感知的系统和方法，用于最小化传感器网络环境中的功耗
公开(公告)号：US07499376B2
公开(公告)日：2009-03-03
申请号：US11633456
申请日：2006-12-05
申请人： Jin Won Kim , Seung Min Park , Il Gon Park , Kwang Yong Lee , Doo Seop Eom , Won Hee Lee , Woo Young Lee , Tae Young Kim
发明人： Jin Won Kim , Seung Min Park , Il Gon Park , Kwang Yong Lee , Doo Seop Eom , Won Hee Lee , Woo Young Lee , Tae Young Kim
IPC分类号： G01S3/80
CPC分类号： G01S5/18 , G01S5/0289
摘要： Provided are a system and method for position awareness that can be used indoors in a large-scale environment and can minimize generation of radio frequency (RF) and ultrasonic waves in a wireless sensor network including low-priced sensor nodes capable of precise position measurement, thus improving energy efficiency by reducing unnecessary power consumption. The method includes the steps of: (a) calculating initial position coordinates using beacon information received from adjacent beacons through a broadcast beacon solicitation signal, sending a synchronization signal to the beacons, and synchronizing the beacons; (b) receiving ultrasonic waves generated from the adjacent beacons activated by a broadcast start message, and calculating position coordinates; and (c) when the calculated position coordinates correspond to a predetermined hand-off threshold position, transmitting a hand-off process message to a newly activated beacon, and executing a hand-off process routine.
摘要翻译：提供一种用于位置感知的系统和方法，其可以在大规模环境中室内使用，并且可以在包括能够进行精确位置测量的低价传感器节点的无线传感器网络中最小化射频（RF）和超声波的产生，从而通过减少不必要的功率消耗来提高能量效率。该方法包括以下步骤：（a）使用通过广播信标请求信号从相邻信标接收到的信标信息来计算初始位置坐标，向信标发送同步信号，并同步信标; （b）接收由广播开始消息激活的相邻信标产生的超声波，并计算位置坐标; 以及（c）当计算出的位置坐标对应于预定的切换阈值位置时，将切换处理消息发送到新激活的信标，并且执行切换处理程序。

9. 发明授权

US07084468B2 Hybrid ferromagnet/semiconductor spin device and fabrication method therof 失效
标题翻译：混合铁磁体/半导体自旋器件及其制造方法
公开(公告)号：US07084468B2
公开(公告)日：2006-08-01
申请号：US10801744
申请日：2004-03-15
申请人： Woo Young Lee , Suk Hee Han , Joon Yeon Chang , Hi Jung Kim , Han Joo Lee , Woong Jun Hwang , Moo Whan Shin , Young Keun Kim
发明人： Woo Young Lee , Suk Hee Han , Joon Yeon Chang , Hi Jung Kim , Han Joo Lee , Woong Jun Hwang , Moo Whan Shin , Young Keun Kim
IPC分类号： G11B5/39
CPC分类号： H01F10/1936 , B82Y25/00 , B82Y40/00 , H01F10/193 , H01F41/308 , H01L29/66984
摘要： Disclosed are a spin injection device applicable as a memory and a logical device using a spin valve effect obtained by injecting a carrier spin-polarized from a ferromagnet into a semiconductor at an ordinary temperature, and a spin-polarized field effect transistor.
摘要翻译：公开了适用于作为存储器的自旋注入装置和使用通过将从铁磁体自旋极化的载流子注入到常温下的半导体中而获得的自旋阀效应的自旋注入装置和自旋极化场效应晶体管。

10. 发明申请

US20080128717A1 Light emitting diode package and backlight unit having the same 审中-公开
标题翻译：具有相同的发光二极管封装和背光单元
公开(公告)号：US20080128717A1
公开(公告)日：2008-06-05
申请号：US11982237
申请日：2007-10-31
申请人： Hyeon-Yong Jang , Hyung-Ku Kang , Sang-Hoon Park , Woo Young Lee
发明人： Hyeon-Yong Jang , Hyung-Ku Kang , Sang-Hoon Park , Woo Young Lee
IPC分类号： H01L33/00
CPC分类号： H01L25/0753 , G02F2001/133612 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting diode (“LED”) package and a backlight unit having the same are disclosed. The LED package includes a package substrate, at least two LED chips arranged on the package substrate spaced apart from each other and having different brightness characteristics, a plurality of electrodes mounted on the package substrate to supply electrical power to the LED chips, and electric wires connecting the electrodes to the LED chips.
摘要翻译：公开了一种发光二极管（“LED”）封装以及具有该发光二极管的背光单元。 LED封装包括封装基板，布置在彼此间隔开并具有不同亮度特性的封装基板上的至少两个LED芯片，安装在封装基板上以向LED芯片供电的多个电极，以及电线将电极连接到LED芯片。

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