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    • 1. 发明授权
    • Integrated full bridge circuit with four transistors
    • 具有四个晶体管的集成全桥电路
    • US06157239A
    • 2000-12-05
    • US468372
    • 1999-12-20
    • Wolfgang HorchlerReinhard Mueller
    • Wolfgang HorchlerReinhard Mueller
    • H02M7/5387H03K17/66H03K17/56
    • H02M7/5387H03K17/663H01L2924/0002
    • An integrated full bridge circuit includes four transistors divided into two series-connected pairs of transistors each forming a half bridge circuit. Resistor elements each connect a respective one of the pairs of transistors to a reference potential. Other resistor elements are each connected to a respective one of two separate supply terminals inside a housing. Each of the other resistor elements is connected to one of the transistors of a respective one of the pairs of transistors at a junction. Driver transistors each have a load path with two connections and a type complementary to the transistors connected to the other resistor elements. One of the connections is connected upstream of the control terminal of a respective one of the transistors connected to the other resistor elements. The other of the connections in each of the half bridge circuits is connected to the junction in the other of the half bridge circuits. The advantage is power loss reduction.
    • 集成的全桥电路包括分为两个串联连接的晶体管对的四个晶体管,每个晶体管形成半桥电路。 电阻元件将每对晶体管中的相应一个连接到参考电位。 其他电阻元件各自连接到壳体内的两个单独的供电端子中的相应一个。 其他电阻元件中的每一个在一个结处连接到晶体管对中的一个晶体管中的一个晶体管。 驱动晶体管各自具有带有两个连接的负载路径和与连接到其它电阻器元件的晶体管互补的类型。 其中一个连接被连接到连接到其它电阻器元件的晶体管的相应一个的控制端子的上游。 每个半桥电路中的另一个连接连接到另一半桥电路中的结。 优点是减少功率损耗。
    • 2. 发明申请
    • Over-Temperature Protected Transistor
    • 过温保护晶体管
    • US20130200927A1
    • 2013-08-08
    • US13369092
    • 2012-02-08
    • Michael AsamCarmelo Fabio GiuntaWolfgang HorchlerMarkus Winkler
    • Michael AsamCarmelo Fabio GiuntaWolfgang HorchlerMarkus Winkler
    • H03K17/00
    • H03K17/0822H03K2217/0081
    • A circuit for controlling the switching operation of a transistor is described. A gate driver circuit is operably connected to a control electrode of the transistor and is configured to charge and discharge the control electrode to switch the transistor on and off, respectively, in accordance with a control signal. The charging and discharging of the control electrode is done such that the corresponding transitions in the load current and the output voltage are smooth with a defined slope. A controllable switch is connected to the control electrode such that, when the switch closes, the control electrode is quickly discharged via the switch thus quickly switching off the transistor. A control logic circuit is configured to close the controllable switch for switching off the transistor when at least one of a number of conditions holds true.
    • 描述用于控制晶体管的开关操作的电路。 栅极驱动器电路可操作地连接到晶体管的控制电极,并且被配置为对控制电极进行充电和放电,以根据控制信号分别开关晶体管。 完成控制电极的充电和放电,使得负载电流和输出电压中的相应转变以规定的斜率平滑。 可控开关连接到控制电极,使得当开关闭合时,控制电极通过开关快速放电,从而快速关断晶体管。 控制逻辑电路被配置为当多个条件中的至少一个成立时关闭用于关断晶体管的可控开关。
    • 3. 发明授权
    • Switching control circuit for thermal protection of transistors
    • 晶体管热保护开关控制电路
    • US08624637B2
    • 2014-01-07
    • US13369092
    • 2012-02-08
    • Michael AsamCarmelo Fabio GiuntaWolfgang HorchlerMarkus Winkler
    • Michael AsamCarmelo Fabio GiuntaWolfgang HorchlerMarkus Winkler
    • H03B1/00H03K17/687
    • H03K17/0822H03K2217/0081
    • A circuit for controlling the switching operation of a transistor is described. A gate driver circuit is operably connected to a control electrode of the transistor and is configured to charge and discharge the control electrode to switch the transistor on and off, respectively, in accordance with a control signal. The charging and discharging of the control electrode is done such that the corresponding transitions in the load current and the output voltage are smooth with a defined slope. A controllable switch is connected to the control electrode such that, when the switch closes, the control electrode is quickly discharged via the switch thus quickly switching off the transistor. A control logic circuit is configured to close the controllable switch for switching off the transistor when at least one of a number of conditions holds true.
    • 描述用于控制晶体管的开关操作的电路。 栅极驱动器电路可操作地连接到晶体管的控制电极,并且被配置为对控制电极进行充电和放电,以根据控制信号分别开关晶体管。 完成控制电极的充电和放电,使得负载电流和输出电压中的相应转变以规定的斜率平滑。 可控开关连接到控制电极,使得当开关闭合时,控制电极通过开关快速放电,从而快速关断晶体管。 控制逻辑电路被配置为当多个条件中的至少一个成立时关闭用于关断晶体管的可控开关。
    • 8. 发明授权
    • Power switching circuit with reduced interference radiation
    • 电源开关电路具有减少的干扰辐射
    • US06313689B1
    • 2001-11-06
    • US09373523
    • 1999-08-12
    • Wolfgang Horchler
    • Wolfgang Horchler
    • H03K1716
    • H03K17/166
    • A power switching circuit with reduced interference radiation includes at least one pair of low-side and high-side MOS power transistors, between which a load resistor is connected. One or at least one of the low-side MOS power transistors is connected to a drive circuit having a divider for dividing a difference between a maximum output voltage of the MOS power transistor and an instantaneous output voltage at the load resistor as a dividend, by a maximum output voltage of the MOS power transistor as a divisor, and a level converter for generating a drive voltage for the MOS power transistor. The drive voltage is proportional to the quotient.
    • 具有减小的干涉辐射的功率开关电路包括至少一对低边和高边MOS功率晶体管,负极电阻之间连接有它们。 低侧MOS功率晶体管中的一个或至少一个连接到具有用于将MOS功率晶体管的最大输出电压和负载电阻器上的瞬时输出电压之间的差除以作为分红的除法器的驱动电路,通过 作为除数的MOS功率晶体管的最大输出电压,以及用于产生用于MOS功率晶体管的驱动电压的电平转换器。 驱动电压与商成正比。