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1. 发明授权

US06954342B2 Underlayer for high amplitude spin valve sensors 有权
标题翻译：用于高振幅自旋阀传感器的底层
公开(公告)号：US06954342B2
公开(公告)日：2005-10-11
申请号：US09846707
申请日：2001-04-30
申请人： Witold Kula , Alexander Zeltser
发明人： Witold Kula , Alexander Zeltser
IPC分类号： G01R33/09 , G11B5/012 , G11B5/39 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3903 , G11B2005/3996
摘要： A spin valve sensor system and a method for fabricating the same are provided. Such spin valve sensor includes a pinned layer having a pinned layer magnetization. Also included is a free layer disposed adjacent the pinned layer. The free layer has a free layer magnetization perpendicular to the pinned layer magnetization in the absence of an external field. A pinning layer is disposed adjacent the pinned layer for fixing the pinned layer magnetization. Further included is an underlayer disposed adjacent the pinning layer. Such underlayer comprises NiFeX. Disposed adjacent the underlayer and the pinning layer is an upper layer. The upper layer comprises a material selected from the group consisting of NiFe and CoFe for increasing a GMR ratio associated with the SV sensor.
摘要翻译：提供一种自旋阀传感器系统及其制造方法。这种自旋阀传感器包括具有钉扎层磁化的钉扎层。还包括邻近被钉扎层设置的自由层。自由层在没有外部场的情况下具有垂直于被钉扎层磁化的自由层的磁化。钉扎层邻近被钉扎层设置以固定被钉扎层的磁化。还包括设置在钉扎层附近的底层。这种底层包括NiFeX。邻近下层设置并且钉扎层是上层。上层包括选自NiFe和CoFe的材料，用于增加与SV传感器相关联的GMR比。

2. 发明申请

US20050002127A1 Enhanced spin-valve sensor with engineered overlayer 失效
标题翻译：具有工程覆层的增强型自旋阀传感器
公开(公告)号：US20050002127A1
公开(公告)日：2005-01-06
申请号：US10898816
申请日：2004-07-26
申请人： Witold Kula , Alexander Zeltser
发明人： Witold Kula , Alexander Zeltser
IPC分类号： G01R33/09 , G11B5/012 , G11B5/39 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3903 , G11B2005/3996 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044
摘要： A GMR sensor is disclosed for sensing magnetically recorded information on a data storage medium. The sensor includes a ferromagnetic free layer and a ferromagnetic pinned layer sandwiching an electrically conductive spacer layer. An engineered overlayer is formed on the free layer to decrease free layer magnetic thickness without reducing physical thickness.
摘要翻译：公开了一种用于在数据存储介质上检测磁记录信息的GMR传感器。传感器包括铁磁自由层和夹着导电间隔层的铁磁性钉扎层。在自由层上形成工程化的覆层以减少自由层的磁性厚度，而不会减小物理厚度。

3. 发明申请

US20050226998A1 Fabrication of self-aligned reflective/protective overlays on magnetoresistance sensors, and the sensors 有权
公开(公告)号：US20050226998A1
公开(公告)日：2005-10-13
申请号：US11146656
申请日：2005-06-06
申请人： Witold Kula , Alexander Zeltser
发明人： Witold Kula , Alexander Zeltser
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , G11B5/40 , H01L43/08 , H01L43/12 , B05D5/12
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3133 , G11B5/3903 , G11B5/3909 , G11B5/40 , G11B2005/3996
摘要： A magnetoresistance sensor is fabricated using a sensor structure including a free layer deposited upon a lower layered structure and depositing an oxide structure overlying the free layer. The depositing of the oxide structure includes the steps of depositing a buffer layer overlying the free layer, wherein the buffer layer is a buffer-layer metal when deposited, depositing an overlayer overlying and contacting the buffer layer, the overlayer being an overlayer metallic oxide of an overlayer metal, and oxidizing the buffer layer to form a buffer layer metallic oxide.

4. 发明授权

US06700754B2 Oxidized copper (Cu) spacer between free and pinned layer for high performance spin valve applications 失效
标题翻译：用于高性能自旋阀应用的自由和固定层之间的氧化铜（Cu）间隔物
公开(公告)号：US06700754B2
公开(公告)日：2004-03-02
申请号：US09846735
申请日：2001-04-30
申请人： Witold Kula , Alexander Zeltser
发明人： Witold Kula , Alexander Zeltser
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3903
摘要： A spin valve sensor system and method for fabricating the same is provided. Included is a free layer and a pinned layer with a spacer layer disposed between the free layer and the pinned layer. Such spacer layer is oxidized for improving operational characteristics of the spin valve sensor.
摘要翻译：提供一种自旋阀传感器系统及其制造方法。包括自由层和钉扎层，其中间隔层设置在自由层和钉扎层之间。这种间隔层被氧化以改善自旋阀传感器的操作特性。

5. 发明申请

US20070211392A1 Spin valve with Ir-Mn-Cr pinning layer and seed layer including Pt-Mn 审中-公开
标题翻译：具有Ir-Mn-Cr钉扎层和包含Pt-Mn的种子层的旋转阀
公开(公告)号：US20070211392A1
公开(公告)日：2007-09-13
申请号：US11370773
申请日：2006-03-08
申请人： Alexander Zeltser
发明人： Alexander Zeltser
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3929 , G11B2005/3996
摘要： In a disk drive GMR or TMR head that uses Ir—Mn—Cr as a pinning layer, Pt—Mn is used as part of the seed layer below the pinning layer to enhance GMR and pinning without deleteriously affecting other head characteristics and to improve head thermal stability.
摘要翻译：在使用Ir-Mn-Cr作为钉扎层的磁盘驱动器GMR或TMR头中，Pt-Mn用作钉扎层下面的种子层的一部分，以增强GMR和钉扎，而不会有害地影响其他头部特性并改善头部热稳定性。

6. 发明授权

US07986696B1 Method and apparatus for longest prefix matching 有权
标题翻译：最长前缀匹配的方法和装置
公开(公告)号：US07986696B1
公开(公告)日：2011-07-26
申请号：US12369792
申请日：2009-02-12
申请人： Vladimir Miliavisky , Eyal Oren , Vladimir Kolmanovitch , Alexander Zeltser , Michael Mesh
发明人： Vladimir Miliavisky , Eyal Oren , Vladimir Kolmanovitch , Alexander Zeltser , Michael Mesh
IPC分类号： H04L12/56 , G06F13/00
CPC分类号： H04L45/7457 , H04L45/54 , H04L45/7453
摘要： A lookup table including stored data, the lookup table including a Random Access Memory (RAM) for storing the data, wherein the RAM includes a plurality of windows; and a Ternary Content Addressable Memory (TCAM) for storing indices, each index pointing to the windows, and a method for performing a Longest Prefix Match (LPM) including organizing data in such a lookup table, searching according to a lookup key in the TCAM, receiving a match signal from the TCAM including an index pointing to one of the windows, and searching according to the lookup key in the pointed to window.
摘要翻译：包括存储数据的查找表，查找表包括用于存储数据的随机存取存储器（RAM），其中RAM包括多个窗口; 以及用于存储索引的三进制内容可寻址存储器（TCAM），每个索引指向窗口，以及用于执行包括在这样的查找表中组织数据的最长前缀匹配（LPM）的方法，根据TCAM中的查找键进行搜索从TCAM接收包括指向其中一个窗口的索引的匹配信号，并根据指向窗口中的查找键进行搜索。

7. 发明授权

US08706201B2 Apparatus and method for analysis of high frequency QRS complexes 有权
标题翻译：用于分析高频QRS复合物的装置和方法
公开(公告)号：US08706201B2
公开(公告)日：2014-04-22
申请号：US11579273
申请日：2005-05-01
申请人： Amir Beker , Orna Bregman-Amitai , Alexander Zeltser
发明人： Amir Beker , Orna Bregman-Amitai , Alexander Zeltser
IPC分类号： A61B5/04 , A61B5/0472
CPC分类号： A61B5/0472 , A61B5/0452
摘要： An apparatus for QRS waveform quantifying, comprising: an input unit, for receiving one or more high frequency (HF) range QRS complexes from one or more ECG leads, a primary analyzer, for calculating a primary index from the high frequency (HF) range QRS complex, and a secondary analyzer, connected after the primary analyzer, for deriving a secondary index from the primary index, thereby to provide a quantification of QRS complexes.
摘要翻译：一种用于QRS波形量化的装置，包括：输入单元，用于从一个或多个ECG导联接收一个或多个高频（HF）范围QRS复合物，主分析器，用于从高频（HF）范围计算主要指标 QRS复合物和次级分析仪，在主分析仪之后连接，用于从主要指标导出次级指数，从而提供QRS复合物的定量。

8. 发明授权

US07646570B2 CPP read sensor having constrained current paths made of lithographically-defined conductive vias with surrounding oxidized metal sublayers and method of making same 有权
标题翻译： CPP读取传感器具有由具有周围的氧化金属子层的光刻定义的导电通孔制成的约束电流路径及其制造方法
公开(公告)号：US07646570B2
公开(公告)日：2010-01-12
申请号：US11496604
申请日：2006-07-31
申请人： Hardayal Singh Gill , Jordan Asher Katine , Alexander Zeltser
发明人： Hardayal Singh Gill , Jordan Asher Katine , Alexander Zeltser
IPC分类号： G11B5/39 , H04R31/00
CPC分类号： G11B5/398 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/3983 , H01F41/306 , H01F41/308 , Y10T29/49046 , Y10T29/49052
摘要： Current-perpendicular-to-plane (CPP) read sensors having constrained current paths made of lithographically-defined conductive vias with surrounding oxidized metal sublayers, and methods of making the same, are disclosed. In one illustrative example, at least part of a sensor stack structure which includes an electrically conductive spacer layer is formed. A metal (e.g. Ta) sublayer is then deposited over and adjacent the spacer layer, followed by one of an oxidation process, a nitridation process, and an oxynitridation process, to produce an insulator (e.g. TaOx) from the metal sublayer. The metal sublayer deposition and oxidation/nitridation/oxynitridation processes are repeated as necessary to form the insulator with a suitable thickness. Next, a resist structure which exposes one or more portions of the insulator is formed over the insulator. With the resist structure in place, exposed insulator materials are removed by etching to form one or more apertures through the insulator down to the spacer layer. Electrically conductive materials are subsequently deposited within the one or more apertures to form one or more lithographically-defined conductive vias of a current-constraining structure. Advantageously, the lithographically-defined conductive vias increase the current density of the read sensor in the region of the sensing layers to thereby simultaneously increase its resistance and magnetoresistance. With use of the process of oxidation, nitridation, or oxynitridation on each metal sublayer, degradation of the spacer layer is reduced or eliminated such that the desirable soft magnetics of the sensing layers in the read sensor are maintained.
摘要翻译：公开了具有由具有周围氧化金属子层的光刻定义的导电通孔制成的约束电流路径的电流垂直平面（CPP）读取传感器及其制造方法。在一个说明性示例中，形成包括导电间隔层的传感器堆叠结构的至少一部分。然后将金属（例如Ta）子层沉积在间隔层上并与其相邻，随后是氧化工艺，氮化工艺和氧氮化工艺中的一种，以从金属子层产生绝缘体（例如TaO x）。根据需要重复金属亚层沉积和氧化/氮化/氧氮化处理以形成具有合适厚度的绝缘体。接下来，在绝缘体上形成露出绝缘体的一个或多个部分的抗蚀剂结构。在抗蚀剂结构就位的情况下，通过蚀刻去除暴露的绝缘体材料，以形成穿过绝缘体的一个或多个孔向下到间隔层。导电材料随后沉积在一个或多个孔内以形成电流约束结构的一个或多个光刻定义的导电通孔。有利地，光刻定义的导电通孔增加读取传感器在感测层的区域中的电流密度，从而同时增加其电阻和磁阻。通过使用在每个金属子层上的氧化，氮化或氧氮化的过程，间隔层的劣化被减少或消除，使得保持读取传感器中感测层的期望的软磁性。

9. 发明申请

US20060067012A1 Method and apparatus having improved magnetic read head sensors 失效
公开(公告)号：US20060067012A1
公开(公告)日：2006-03-30
申请号：US10955396
申请日：2004-09-30
申请人： Jinshan Li , Alexander Zeltser
发明人： Jinshan Li , Alexander Zeltser
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3929 , G11B2005/3996
摘要： A method and apparatus for an improved magnetic read sensor having synthetic or AP pinned layers with high resistance and high magnetoelastic anisotropy is disclosed. A pinned layer includes a cobalt-iron ternary alloy, where a third constituent of the cobalt-iron ternary alloy layer is selected for increasing the resistance and magnetoelastic anisotropy of the cobalt-iron ternary alloy layer.

10. 发明申请

US20060061917A1 Magnetic head spin valve structure with CoFeCu magnetic layer and ZnOx/TaOx cap layer 有权
标题翻译：磁头自旋阀结构采用CoFeCu磁性层和ZnOx / TaOx帽层
公开(公告)号：US20060061917A1
公开(公告)日：2006-03-23
申请号：US10945687
申请日：2004-09-21
申请人： Hardayal Gill , Alexander Zeltser
发明人： Hardayal Gill , Alexander Zeltser
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3929 , G11B2005/3996
摘要： A magnetic head that includes a spin valve sensor of the present invention which may be a CIP or CPP device. The sensor includes a free magnetic layer that is comprised of CoFeCu. In certain embodiments the free magnetic layer may also include a sublayer of NiFe. The CoFeCu free magnetic layer preferably includes Fe in a range of 5-20 at. % and Cu in a range of 1-10 at. %. The sensor may also include a cap layer of the present invention that is comprised of ZnOx/TaOx. The CoFeCu free magnetic layer of the present invention provides improved sensor performance characteristics of reduced coercivity and generally similar GMR as compared to the prior art. Where the ZnOx/TaOx cap layer is utilized, increased GMR is obtained. Thus a magnetic head of the present invention that includes both a CoFeCu free magnetic layer and a ZnOx/TaOx cap layer demonstrates reduced coercivity and increased GMR.
摘要翻译：一种磁头，其包括可以是CIP或CPP装置的本发明的自旋阀传感器。传感器包括由CoFeCu构成的自由磁性层。在某些实施方案中，自由磁性层还可以包括NiFe的子层。 CoFeCu自由磁性层优选包括在5-20at的范围内的Fe。％和Cu在1-10at的范围内。％。该传感器还可以包括本发明的覆盖层，其由ZnO x / TaO x x构成。与现有技术相比，本发明的CoFeCu自由磁性层提供改进的传感器性能特性，降低了矫顽力和大体相似的GMR。在利用ZnO x / TaO x帽盖层的情况下，获得增加的GMR。因此，本发明的磁头包括无CoFeCu的磁性层和ZnO薄膜覆盖层表现出降低的矫顽力和增加的GMR。

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