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1. 发明授权

US07639456B2 Double mill process for patterning current perpendicular to plane (CPP) magnetoresistive devices to minimize barrier shorting and barrier damage 失效
标题翻译：用于图形化垂直于平面（CPP）磁阻器件的电流的双轧机工艺，以最小化障碍物短路和屏障损坏
公开(公告)号：US07639456B2
公开(公告)日：2009-12-29
申请号：US11246720
申请日：2005-10-06
申请人： Ying Hong , Wipul Pemsiri Jayasekara
发明人： Ying Hong , Wipul Pemsiri Jayasekara
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3163 , G11B5/3906
摘要： A current perpendicular to plane (CPP) sensor and method of manufacturing such a sensor that prevents current shunting at the sides of the barrier/spacer layer due to redeposited material. A first ion mill is performed to remove at least the free layer. A quick glancing ion mill can be performed to remove the small amount of redep that may have accumulated on the sides of the free layer and barrier/spacer layer. Then an insulation layer is deposited to protect the sides of the free layer/barrier layer during subsequent manufacturing which can include further ion milling to define the rest of the sensor and another glancing ion mill to remove the redep formed by the further ion milling. This results in a sensor having no current shunting at the sides of the sensor and having no damage to the sensor layers.
摘要翻译：垂直于平面（CPP）传感器的电流和制造这种传感器的方法，其防止由于再沉积材料在阻挡层/间隔层的侧面的电流分流。执行第一离子研磨以去除至少自由层。可以进行快速扫查离子磨，以除去可能积聚在自由层和阻挡层/间隔层的侧面上的少量重排物。然后沉积绝缘层以在随后的制造期间保护自由层/阻挡层的侧面，其可以包括进一步的离子铣削以限定传感器的其余部分和另一个扫掠离子磨机以移除由进一步的离子铣削形成的重复。这导致传感器在传感器的侧面没有电流分流并且不会损坏传感器层。

2. 发明申请

US20090246890A1 METHOD FOR MANUFACTURING A TUNNEL JUNCTION MAGNETORESISTIVE SENSOR WITH IMPROVED PERFORMANCE AND HAVING A CoFeB FREE LAYER 有权
标题翻译：用于制造具有改进性能并具有CoFeB自由层的隧道结型磁传感器的方法
公开(公告)号：US20090246890A1
公开(公告)日：2009-10-01
申请号：US12060006
申请日：2008-03-31
申请人： Hardayal Singh Gill , Wipul Pemsiri Jayasekara
发明人： Hardayal Singh Gill , Wipul Pemsiri Jayasekara
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3906 , G11B2005/3996 , H01F10/3254 , H01F10/3272 , H01F41/303
摘要： A method for manufacturing a magnetoresistive sensor that provides increased magnetoresistive performance. The method includes forming a series of sensor layers with at least one layer containing CoFeB, and having a first capping layer thereover. A high temperature annealing is performed to optimize the grains structure of the sensor layers. The first capping layer is then removed, such as by reactive ion etching (RIE). An antiferromagnetic layer is then deposited followed by a second capping layer. A second annealing is performed to set the magnetization of the pinned layer, the second annealing being performed at a lower temperature than the first annealing.
摘要翻译：一种磁阻传感器的制造方法，其提供增加的磁阻性能。该方法包括形成一系列具有至少一层含有CoFeB的传感器层，并且在其上具有第一盖层。进行高温退火以优化传感器层的晶粒结构。然后去除第一覆盖层，例如通过反应离子蚀刻（RIE）。然后沉积反铁磁层，随后沉积第二盖层。执行第二退火以设定被钉扎层的磁化，第二退火在比第一退火更低的温度下进行。

3. 发明申请

US20090059437A1 DIFFERENTIAL CURRENT PERPENDICULAR TO PLANE GIANT MAGNETORESISTIVE SENSOR STRUCTURE HAVING IMPROVED ROBUSTNESS AGAINST SPIN TORQUE NOISE 有权
标题翻译：对具有改进的旋转噪声抑制噪声的大型磁传感器结构的平均电流的差分电流
公开(公告)号：US20090059437A1
公开(公告)日：2009-03-05
申请号：US11850570
申请日：2007-09-05
申请人： Hardayal Singh Gill , Wipul Pemsiri Jayasekara
发明人： Hardayal Singh Gill , Wipul Pemsiri Jayasekara
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3903 , G11B5/398 , H01F10/3254 , H01F10/3272 , H01F10/3286
摘要： A differential giant magnetoresistive sensor for sensing a magnetic signal. The differential sensor has a structure configured to minimize spin torque noise. The differential magnetoresistive sensor includes first and second magnetoresistive sensor elements and a three lead structure including an inner lead sandwiched between the first and second sensor elements and first and second outer leads. each of the sensor elements includes an antiparallel coupled free layer structure with the free layer of each of the sensor elements preferably being positioned near the inner lead. The three lead structure allows sense current to be supplied to the sensor such that electrons travel first through the free layer of each sensor element and then through the pinned layer structure.
摘要翻译：用于感测磁信号的差分巨磁阻传感器。微分传感器具有使旋转扭矩噪声最小化的结构。差动磁阻传感器包括第一和第二磁阻传感器元件和三引线结构，其包括夹在第一和第二传感器元件与第一和第二外引线之间的内引线。每个传感器元件包括反平行耦合的自由层结构，每个传感器元件的自由层优选地定位在内引线附近。三个引线结构允许感测电流被提供给传感器，使得电子首先通过每个传感器元件的自由层，然后穿过被钉扎层结构。

4. 发明授权

US07446979B2 Laminated draped shield for CPP read sensors 失效
标题翻译： CPP读取传感器的层压罩
公开(公告)号：US07446979B2
公开(公告)日：2008-11-04
申请号：US10955701
申请日：2004-09-30
申请人： Wipul Pemsiri Jayasekara
发明人： Wipul Pemsiri Jayasekara
IPC分类号： G11B5/39
CPC分类号： G11B5/332 , G11B5/313
摘要： A magnetic head is disclosed having a CPP read head which produces reduced cross-track interference. The CPP read head includes a read sensor, a first shield and a second shield. The second shield has side drapes having an edge portion adjacent to the read sensor. The side drapes include a plurality of laminated layers which discourages formation of closure domains at the edge portions, and thus maintaining the side drapes in a state of high magnetic permeability. The laminated layers each include a magnetic layer and a non-magnetic spacer layer. Also disclosed is an edge closed lamination structure.
摘要翻译：公开了一种具有产生减小的交叉磁道干扰的CPP读取头的磁头。 CPP读头包括读取传感器，第一屏蔽和第二屏蔽。第二屏蔽件具有侧面，其具有与读取传感器相邻的边缘部分。侧帘包括多个层压层，其阻止在边缘部分处形成封闭结构域，并且因此将侧帘保持在高磁导率的状态。层叠层各自包括磁性层和非磁性间隔层。还公开了一种边缘封闭层压结构。

5. 发明申请

US20080151441A1 MAGNETORESISTIVE SENSOR HAVING AN ANISOTROPIC HARD BIAS WITH HIGH COERCIVITY 有权
标题翻译：具有高可靠性的ANISOTROPIC硬偏差磁传感器
公开(公告)号：US20080151441A1
公开(公告)日：2008-06-26
申请号：US11615825
申请日：2006-12-22
申请人： James Mac Freitag , Mustafa Michael Pinarbasi , Wipul Pemsiri Jayasekara
发明人： James Mac Freitag , Mustafa Michael Pinarbasi , Wipul Pemsiri Jayasekara
IPC分类号： G11B5/33 , B05D5/12
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3932
摘要： A magnetoresistive sensor having magnetically anisotropic bias layers for biasing the free layer of the sensor. The sensor includes a sensor stack with a pinned layer structure and a free layer structure and having first and second sides. Hard bias structures for biasing the magnetization of the free layer are formed at either side of the sensor stack, and each of the hard bias structure includes a hard magnetic layer that has a magnetic anisotropy to enhance the stability of the biasing. The hard bias structure can include a Cr under-layer having a surface that has been treated by a low power angled ion milling to form it with an anisotropic surface texture. A layer of Cr—Mo alloy is formed over the Cr under-layer and the hard magnetic material layer is formed over the Cr—Mo alloy layer. The anisotropic surface texture of the Cr layer induces an aligned crystalline structure in the hard magnetic layer that causes the hard magnetic layer to have a magnetic anisotropy. In another embodiment, the hard bias structure can include a layer of Ta that has a surface formed with the anisotropic roughness. A layer of Cr—Mo alloy is formed over the Ta layer and the hard magnetic layer is formed over the Cr—Mo alloy layer. In yet another embodiment, the hard bias structure includes first and second Ta layers with a Si layer sandwiched between them. The second Ta layer has a surface treated with the anisotropic texture. A layer of Cr—Mo alloy can then be formed over the second Ta layer and the hard magnetic material formed over the Cr—Mo alloy layer.
摘要翻译：具有用于偏置传感器自由层的磁各向异性偏置层的磁阻传感器。传感器包括具有钉扎层结构和自由层结构并具有第一和第二侧面的传感器堆叠。在传感器堆叠的任一侧形成用于偏置自由层的磁化的硬偏置结构，并且每个硬偏置结构都包括具有磁各向异性以增强偏置稳定性的硬磁性层。硬偏压结构可以包括具有通过低功率角度离子铣削处理以形成各向异性表面纹理的表面的Cr底层。在Cr底层上形成Cr-Mo合金层，在Cr-Mo合金层上形成硬磁性体层。 Cr层的各向异性表面结构在硬磁性层中引起对准的结晶结构，使得硬磁性层具有磁各向异性。在另一个实施例中，硬偏压结构可以包括具有由各向异性粗糙度形成的表面的Ta层。在Ta层上形成一层Cr-Mo合金，在Cr-Mo合金层上形成硬磁性层。在另一个实施例中，硬偏置结构包括夹在它们之间的Si层的第一和第二Ta层。第二Ta层具有用各向异性结构处理的表面。然后可以在第二Ta层上形成Cr-Mo合金层，并在Cr-Mo合金层上形成硬磁性材料。

6. 发明申请

US20080112090A1 Magnetic recording head with overlaid leads 有权
标题翻译：带重叠导线的磁记录头
公开(公告)号：US20080112090A1
公开(公告)日：2008-05-15
申请号：US11595186
申请日：2006-11-09
申请人： James Mac Freitag , David Eugene Heim , Kuok San Ho , Wipul Pemsiri Jayasekara , Kim Y. Lee , Tsann Lin , Jyh-Shuey Lo , Mustafa Michael Pinarbasi , Ching Hwa Tsang
发明人： James Mac Freitag , David Eugene Heim , Kuok San Ho , Wipul Pemsiri Jayasekara , Kim Y. Lee , Tsann Lin , Jyh-Shuey Lo , Mustafa Michael Pinarbasi , Ching Hwa Tsang
IPC分类号： G11B5/33
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： A lead overlay design of a magnetic sensor is described with sensor and free layer dimensions such that the free layer is stabilized by the large demagnetization field due to the shape anisotropy. In one embodiment the giant magnetoresistive (GMR) effect under the leads is destroyed by removing the antiferromagnetic (AFM) and pinned layers above the free layer. The overlaid lead pads are deposited on the exposed spacer layer at the sides of the mask that defines the active region. In other embodiment a layer of electrically insulating material is deposited over the sensor to encapsulate it and thereby insulate it from contact with the hardbias structures. Various embodiments with self-aligned leads are also described. In a variation of the encapsulation embodiment, the insulating material is also deposited under the lead pads so the electrical current is channeled through the active region of the sensor and sidewall deposited lead pads.
摘要翻译：用传感器和自由层尺寸描述磁传感器的引线覆盖设计，使得由于形状各向异性，自由层由大的退磁场稳定。在一个实施例中，引线下的巨磁阻（GMR）效应通过去除自由层上方的反铁磁（AFM）和固定层而被破坏。覆盖的引线焊盘沉积在限定有源区的掩模侧面上的暴露间隔层上。在另一个实施例中，电绝缘材料层沉积在传感器上以将其封装并由此使其与硬质合金结构的接触绝缘。还描述了具有自对准引线的各种实施例。在封装实施例的变型中，绝缘材料也沉积在引线焊盘下方，使得电流通过传感器的有源区域和侧壁沉积的引线焊盘。

7. 发明授权

US07332099B2 Ion bombardment of electrical lapping guides to decrease noise during lapping process 失效
标题翻译：离子轰击电气研磨导轨，以减少研磨过程中的噪音
公开(公告)号：US07332099B2
公开(公告)日：2008-02-19
申请号：US11246727
申请日：2005-10-06
申请人： Mark A. Church , Wipul Pemsiri Jayasekara , Howard Gordon Zolla
发明人： Mark A. Church , Wipul Pemsiri Jayasekara , Howard Gordon Zolla
IPC分类号： G11B5/127
CPC分类号： B24B37/042 , Y10T29/49034 , Y10T29/49046 , Y10T29/49048
摘要： A method for reducing noise in a lapping guide. Selected portions of a magnetoresistive device wafer are bombarded with ions such that a magnetoresistive effect of lapping guides is reduced. The device is lapped, using the lapping guides to measure an extent of the lapping.
摘要翻译：一种降低研磨导轨中噪音的方法。用离子轰击磁阻器件晶片的选定部分，使得研磨导轨的磁阻效应降低。研磨装置，使用研磨导轨测量研磨的程度。

8. 发明授权

US06996894B2 Methods of making magnetic heads with improved contiguous junctions 失效
标题翻译：制造具有改进的连续结的磁头的方法
公开(公告)号：US06996894B2
公开(公告)日：2006-02-14
申请号：US10109110
申请日：2002-03-28
申请人： Richard Hsiao , Wipul Pemsiri Jayasekara , Mustafa Pinarbasi , Patrick Rush Webb
发明人： Richard Hsiao , Wipul Pemsiri Jayasekara , Mustafa Pinarbasi , Patrick Rush Webb
IPC分类号： G11B5/127 , B44C1/22
CPC分类号： B82Y10/00 , G11B5/3116 , G11B5/313 , G11B5/3163 , G11B5/3903 , Y10T29/49041 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Methods of making a read head with improved contiguous junctions are described. After sensor layer materials are deposited over a substrate, a lift-off mask is formed over the sensor layer materials in a central region which is surrounded by end regions. Ion milling is performed with use of the lift-off mask such that the sensor layer materials in the end regions are removed and those in the central region remain to form a read sensor. A high-angle ion mill (e.g. between 45–80 degrees) is then performed to remove redeposited material from side walls of the lift-off mask. Next, a reactive ion etch (RIE) is used to reduce the thickness and the width of the lift-off mask and to remove capping layer materials from the top edges of the read sensor. With the reduced-size lift-off mask in place, hard bias and lead layers are deposited adjacent the read sensor as well as over the mask. The reduced-size lift-off mask allows the amount of hard bias to be increased in the contiguous junction region, and the edges of the leads to be deposited more closely over the top edges of the read sensor. Advantageously, the stability of the sensor is enhanced and the transfer curve is improved using a method which can be controlled independently from the initial mask structure and ion milling process. No critical alignments or multiple photoresist processes are necessary.
摘要翻译：描述了制造具有改进的连续结的读取头的方法。在传感器层材料沉积在衬底上之后，在由端部区域包围的中心区域中的传感器层材料上形成剥离掩模。使用剥离掩模进行离子铣削，使得端部区域中的传感器层材料被去除，并且在中心区域中的传感器层材料保持形成读取传感器。然后执行高角度离子磨（例如在45-80度之间）以从剥离掩模的侧壁去除再沉积的材料。接下来，使用反应离子蚀刻（RIE）来减小剥离掩模的厚度和宽度，并从读取传感器的顶部边缘去除封盖层材料。随着尺寸减小的剥离掩模就位，硬读取传感器以及掩模附近沉积了硬偏置和引线层。缩小尺寸的剥离掩模允许在连续接合区域中增加硬偏置的量，并且引线的边缘更紧密地沉积在读取传感器的顶部边缘上。有利地，增强了传感器的稳定性，并且使用可以独立于初始掩模结构和离子铣削过程进行控制的方法来提高传递曲线。不需要临界对准或多个光刻胶工艺。

9. 发明授权

US06982042B2 Ion bombardment of electrical lapping guides to decrease noise during lapping process 失效
标题翻译：离子轰击电气研磨导轨，以减少研磨过程中的噪音
公开(公告)号：US06982042B2
公开(公告)日：2006-01-03
申请号：US10377854
申请日：2003-02-28
申请人： Mark A. Church , Wipul Pemsiri Jayasekara , Howard Gordon Zolla
发明人： Mark A. Church , Wipul Pemsiri Jayasekara , Howard Gordon Zolla
IPC分类号： G11B11/39
CPC分类号： B24B37/042 , Y10T29/49034 , Y10T29/49046 , Y10T29/49048
摘要： A method for reducing noise in a lapping guide. Selected portions of a Giant magnetoresistive device wafer are masked, thereby defining masked and unmasked regions of the wafer in which the unmasked regions include lapping guides. The wafer is bombarded with ions such that a Giant magnetoresistive effect of the unmasked regions is reduced. The GMR device is lapped, using the lapping guides to measure an extent of the lapping
摘要翻译：一种降低研磨导轨中噪音的方法。掩蔽了巨型磁阻器件晶片的选定部分，由此限定晶片的掩蔽和未掩模区域，其中未掩蔽区域包括研磨引导件。用离子轰击晶片，使得未掩蔽区域的巨磁阻效应降低。研磨GMR装置，使用研磨导轨测量研磨的程度

10. 发明授权

US08835892B2 Electronic devices including carbon nano-tube films having boron nitride-based liners, and methods of forming the same 有权
标题翻译：包括具有氮化硼基衬垫的碳纳米管膜的电子器件及其形成方法
公开(公告)号：US08835892B2
公开(公告)日：2014-09-16
申请号：US12608592
申请日：2009-10-29
申请人： Wipul Pemsiri Jayasekara
发明人： Wipul Pemsiri Jayasekara
IPC分类号： H01L47/00 , H01L45/00 , H01L27/24 , B82Y10/00 , H01L51/05 , H01L51/00 , G11C13/02
CPC分类号： H01L45/04 , B82Y10/00 , G11C13/025 , G11C2213/71 , G11C2213/72 , H01L27/2409 , H01L27/2481 , H01L45/12 , H01L45/1233 , H01L45/149 , H01L45/1608 , H01L45/1616 , H01L45/1675 , H01L51/0048 , H01L51/0591
摘要： Methods in accordance with this invention form a microelectronic structure by forming a carbon nano-tube (“CNT”) layer, and forming a boron nitride layer (“BN liner”) above the CNT layer, wherein the BN liner comprises: (1) a first portion disposed above and in contact with the CNT layer; and/or (2) a second portion disposed in and/or around one or more carbon nano-tubes in the CNT layer. Numerous other aspects are provided.
摘要翻译：根据本发明的方法通过形成碳纳米管（“CNT”）层并在CNT层上形成氮化硼层（“BN衬垫”）形成微电子结构，其中BN衬垫包括：（1）设置在所述CNT层上方并与所述CNT层接触的第一部分; 和/或（2）设置在CNT层中的一个或多个碳纳米管中和/或周围的第二部分。提供了许多其他方面。

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